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11. 发明申请

US20120001226A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120001226A1
公开(公告)日：2012-01-05
申请号：US13233392
申请日：2011-09-15
申请人： Akio IWABUCHI , Shuichi Kaneko
发明人： Akio IWABUCHI , Shuichi Kaneko
IPC分类号： H01L29/739
CPC分类号： H01L29/7395 , H01L29/0653 , H01L29/66333
摘要： A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole.
摘要翻译：半导体器件10的制造方法包括在第一导电第一半导体区域的一个主表面上以特定间隔形成多个第二导电第二半导体区域，所述多个第二导电第二半导体区域与第一导电第一半导体区域相对在所述第二半导体区域的主表面上形成多个所述第一导电第三半导体区域，所述多个所述第一导电第三区域彼此分离，在另一个主表面上以特定间隔形成多个孔，所述另一个主表面第一半导体区域的一个主表面，多个孔彼此分离，形成一对相邻的第二导电第四半导体区域，其在第一半导体区域内的孔的底部交替连接，并且将电极内孔。

12. 发明申请

US20120258578A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120258578A1
公开(公告)日：2012-10-11
申请号：US13527163
申请日：2012-06-19
申请人： Hironori AOKI , Shuichi Kaneko
发明人： Hironori AOKI , Shuichi Kaneko
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0878 , H01L29/66734 , H01L29/7397
摘要： A semiconductor device includes an epitaxial layer having a first conduction type, a base layer formed adjacent and on the epitaxial layer and having an opposite second conduction type to the first conduction type, a source layer formed selectively on the base layer and having the first conduction type, a trench which passes through the base layer and the source layer and which reaches the epitaxial layer, an insulation film formed along an interior wall of the trench, a control electrode formed within the trench via the insulation film, and a semiconductor region formed along the bottom part of the trench at the epitaxial layer and having the first conduction type.
摘要翻译：半导体器件包括具有第一导电类型的外延层，与外延层相邻并且在外延层上形成并具有与第一导电类型相反的第二导电类型的基极层，源层选择性地形成在基极层上并具有第一导电类型，通过基底层和源极层并到达外延层的沟槽，沿着沟槽的内壁形成的绝缘膜，经由绝缘膜形成在沟槽内的控制电极和形成的半导体区域沿着沟槽的底部在外延层处并具有第一导电类型。

13. 发明申请

US20120157341A1 DETECTION OF DIGESTIVE ORGAN CANCER, GASTRIC CANCER, COLORECTAL CANCER, PANCREATIC CANCER, AND BILIARY TRACT CANCER BY GENE EXPRESSION PROFILING 有权
标题翻译：根据基因表达分析检测消化性癌，胃癌，色素性癌，胰腺癌和胆汁性肝癌
公开(公告)号：US20120157341A1
公开(公告)日：2012-06-21
申请号：US13391858
申请日：2010-08-03
申请人： Shuichi Kaneko , Masao Honda , Yoshio Sakai , Taro Yamashita
发明人： Shuichi Kaneko , Masao Honda , Yoshio Sakai , Taro Yamashita
IPC分类号： C40B30/04 , C40B40/06
CPC分类号： C12Q1/6886 , C12Q2600/158 , C12Q2600/16
摘要： The present invention provides a method and a reagent for detecting a digestive organ cancer, gastric cancer, colorectal cancer, pancreatic cancer, or biliary tract cancer patient by analyzing genes with expression levels (in peripheral blood) that vary in association with digestive organ cancer, gastric cancer, colorectal cancer, pancreatic cancer, or biliary tract cancer cases, compared with normal healthy subjects. Specifically, the method for detecting a digestive organ cancer, gastric cancer, colorectal cancer, pancreatic cancer, or biliary tract cancer patient based on expression profiles comprises obtaining the expression profile of at least one gene selected from the group consisting of probes corresponding to genes with expression levels (in peripheral blood) that vary in digestive organ cancer, gastric cancer, colorectal cancer, pancreatic cancer, and biliary tract cancer cases, compared with normal healthy subjects. The reagent for detecting digestive organ cancer, gastric cancer, colorectal cancer, pancreatic cancer, or biliary tract cancer contains nucleotides or partial sequences thereof consisting of the nucleotide sequence of at least one gene selected from the group consisting of probes with expression levels that vary in digestive organ cancer, gastric cancer, colorectal cancer, pancreatic cancer, or biliary tract cancer, or nucleotides containing sequences complementary thereto.
摘要翻译：本发明提供了通过分析与消化器官癌相关的变化的表达水平（外周血）的基因来检测消化器官癌，胃癌，结肠直肠癌，胰腺癌或胆道癌患者的方法和试剂，胃癌，结肠直肠癌，胰腺癌或胆道癌，与正常健康人相比。具体地，基于表达谱，检测消化器官癌，胃癌，结肠直肠癌，胰腺癌或胆道癌患者的方法包括获得至少一种基因的表达谱，所述基因选自对应于具有与正常健康受试者相比，消化器官癌，胃癌，结肠直肠癌，胰腺癌和胆道癌患者的表达水平（外周血）差异不大。用于检测消化器官癌，胃癌，结肠直肠癌，胰腺癌或胆道癌的试剂含有由至少一种基因的核苷酸序列组成的核苷酸或其部分序列，所述核苷酸序列选自下组的探针：表达水平在消化器官癌，胃癌，结肠直肠癌，胰腺癌或胆道癌，或含有与其互补的序列的核苷酸。

14. 发明申请

US20090079085A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090079085A1
公开(公告)日：2009-03-26
申请号：US12169207
申请日：2008-07-08
申请人： KEIJI HANNUKI , SHUICHI KANEKO
发明人： KEIJI HANNUKI , SHUICHI KANEKO
IPC分类号： H01L23/52
CPC分类号： H01L29/7802 , H01L23/3677 , H01L23/3735 , H01L29/0657 , H01L29/41725 , H01L29/41741 , H01L29/7395 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor section including a semiconductor element and a recess formed in one of main surfaces and a metallic member at least a part of which is embedded in the recess. A void is formed in a region of the metallic member corresponding to the recess.
摘要翻译：一种半导体器件，包括半导体部件和半导体部件，所述半导体部件包括半导体元件和形成在主表面之一中的凹部和至少一部分嵌入在所述凹部中的金属部件。在对应于凹部的金属构件的区域中形成空隙。

15. 发明授权

US07381435B2 Composition for treating hepatitis C 有权
标题翻译：用于治疗丙型肝炎的组合物
公开(公告)号：US07381435B2
公开(公告)日：2008-06-03
申请号：US10547548
申请日：2004-03-04
申请人： Satoshi Yoshida , Shuichi Kaneko
发明人： Satoshi Yoshida , Shuichi Kaneko
IPC分类号： A61K36/42 , A61K36/286 , A61K36/68 , A61K36/355
CPC分类号： A61K36/286 , A61K36/355 , A61K36/42 , A61K36/68 , A61K2300/00
摘要： By administering a composition comprising pumpkin seed, safflower, plantain and honeysuckle, subjective symptoms (for example, general malaise and abdominal swelling) of a patient with chronic hepatitis C can be eliminated and, moreover, objective symptoms diagnosed by a medical doctor (for example, liver enlargement and palm erythema) can be relieved or eliminated. From 1 to 3 months after the administration of the composition, a significant decrease in hepatitis C virus RNA level is gradually observed. Therefore, the above composition is useful at least as a composition for treating chronic hepatitis C. In particular, it is advantageous in treating a chronic hepatitis C patient showing a high chronic hepatitis C virus RNA level.
摘要翻译：通过施用包含南瓜籽，红花，车前草和金银花的组合物，可以消除患有慢性丙型肝炎患者的主观症状（例如，一般不适和腹部肿胀），此外，由医生诊断的客观症状（例如，，肝肿大和棕红斑）可以缓解或消除。在组合物施用后1至3个月，逐渐观察到丙型肝炎病毒RNA水平的显着降低。因此，上述组合物至少可用作治疗慢性丙型肝炎的组合物。特别是，治疗显示高的慢性丙型肝炎病毒RNA水平的慢性丙型肝炎患者是有利的。

16. 外观设计

USD569054S1 Apparatus for removing deposits from underwater structures 有权
标题翻译：从水下结构中去除沉积物的装置
公开(公告)号：USD569054S1
公开(公告)日：2008-05-13
申请号：US29275351
申请日：2006-12-21
申请人： Shuichi Kaneko
设计人： Shuichi Kaneko

17. 发明授权

US07222578B2 Apparatus for removing attachments deposited on underwater structure 有权
标题翻译：用于去除沉积在水下结构上的附着物的装置
公开(公告)号：US07222578B2
公开(公告)日：2007-05-29
申请号：US11238612
申请日：2005-09-29
申请人： Shuichi Kaneko
发明人： Shuichi Kaneko
IPC分类号： B63B59/00
CPC分类号： B08B9/023 , B08B7/02 , B08B17/02 , B63B59/08 , E02B17/0017
摘要： An apparatus for removing attachments deposited on a surface of an underwater structure and preventing that such attachments be deposited thereafter. The apparatus is floated on the water surface or underwater and with the aid of a natural force repeatedly impinges upon the surface of the structure to remove attachments deposited thereon. The apparatus has a first rope being provided around the surface of the structure at the water surface level, and at least one or more rotating members threaded with said first rope and being freely rotatable about the rope. The rotating members impinge upon the surface of the structure when the apparatus floats on the water surface level or underwater shaving off attachments deposited on the structure, and preventing any further attachments from being deposited thereafter. It is preferred to provide some protruding portions on the surface area of the rotating members where the rotating members impinge upon the surface of the structure.
摘要翻译：一种用于去除沉积在水下结构表面上的附着物并防止此后附着物的装置。该装置浮在水面或水下，借助自然力重复地撞击在结构的表面上以除去沉积在其上的附着物。该装置具有在水面上围绕结构表面设置的第一绳索，以及与所述第一绳索螺纹连接的至少一个或多个旋转构件，并可围绕绳索自由转动。当装置漂浮在水面上或水下时，旋转构件撞击结构的表面，从而在结构上沉积附着物，并防止其后再沉积。优选在旋转构件的表面区域上设置一些突出部分，其中旋转构件撞击结构的表面。

18. 发明申请

US20120225440A1 HEPATOCELLULAR CARCINOMA PROTEIN MARKER, AND METHOD FOR DETECTION OF HEPATOCELLULAR CARCINOMA USING THE SAME 审中-公开
标题翻译：肝细胞癌蛋白标记物及使用其检测肝细胞癌的方法
公开(公告)号：US20120225440A1
公开(公告)日：2012-09-06
申请号：US13471629
申请日：2012-05-15
申请人： Hirotaka Minagawa , Kenji Miyazaki , Yo Tabuse , Kenichi Kamijo , Shuichi Kaneko
发明人： Hirotaka Minagawa , Kenji Miyazaki , Yo Tabuse , Kenichi Kamijo , Shuichi Kaneko
IPC分类号： G01N33/574 , G01N27/62 , G01N21/64
CPC分类号： C07K14/4748 , G01N33/57438
摘要： A method of detecting hepatocellular carcinoma includes using an isolated protein including an amino acid sequence represented by SEQ ID NO: 1.
摘要翻译：检测肝细胞癌的方法包括使用包含SEQ ID NO：1所示氨基酸序列的分离蛋白。

19. 发明授权

US08053830B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08053830B2
公开(公告)日：2011-11-08
申请号：US12169207
申请日：2008-07-08
申请人： Keiji Hannuki , Shuichi Kaneko
发明人： Keiji Hannuki , Shuichi Kaneko
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7802 , H01L23/3677 , H01L23/3735 , H01L29/0657 , H01L29/41725 , H01L29/41741 , H01L29/7395 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor section including a semiconductor element and a recess formed in one of main surfaces and a metallic member at least a part of which is embedded in the recess. A void is formed in a region of the metallic member corresponding to the recess.
摘要翻译：一种半导体器件，包括半导体部件和半导体部件，所述半导体部件包括半导体元件和形成在主表面之一中的凹部和至少一部分嵌入在所述凹部中的金属部件。在对应于凹部的金属构件的区域中形成空隙。

20. 再颁专利

USRE40965E1 Method of forming low-resistance contact electrodes in semiconductor devices 有权
公开(公告)号：USRE40965E1
公开(公告)日：2009-11-10
申请号：US11065718
申请日：2005-02-24
申请人： Shuichi Kaneko , Hironori Aoki , Akio Iwabuchi
发明人： Shuichi Kaneko , Hironori Aoki , Akio Iwabuchi
IPC分类号： H01L21/4763
CPC分类号： H01L21/76804
摘要： There is formed on a semiconductor substrate a lamination of a first insulating film of nondoped silicon glass or the like and, on this first insulating film, a second insulating film of boron phosphor silicate glass or the like, with a conductor layer between the two insulating films. A hole is first dry-etched in the second insulating film, leaving the substrate surface covered by the first insulating film. Then the second insulating film is heated to a reflow temperature such that the hole is thermally deformed, flaring as it extends away from the insulating film. Then a second hole is dry-etched in the first insulating film through the first recited hole in the second insulating film, with the consequent exposure of the semiconductor surface. Then a contract electrode is fabricated by filling the first and the second hole with an electroconductive material into direct contact with the substrate surface. Being covered by the first insulating film, the substrate surface is not to be contaminated with impurities during the heating of the second insulating film.

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