专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070007472A1 Laser processing method for wafer 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US20070007472A1
公开(公告)日：2007-01-11
申请号：US11480515
申请日：2006-07-05
申请人： Satoshi Genda
发明人： Satoshi Genda
IPC分类号： G01N21/86
CPC分类号： B23K37/0408 , B23K26/0622 , B23K26/0736 , B23K26/0853 , B23K26/361 , B23K26/364 , B23K26/40 , B23K26/702 , B23K37/0443 , B23K2103/50
摘要： A laser processing method for a wafer having a plurality of regions defined by streets formed in a lattice pattern on the wafer face, the regions having a plurality of devices formed therein, the method being arranged to irradiate the wafer with a laser beam along the streets, thereby forming laser processed grooves along the streets, comprising: a processed groove formation step of irradiating the wafer with the laser beam, which has a wavelength absorbable to the wafer, along the streets, while positioning a focus spot on a laser beam irradiation surface of the wafer, thereby forming the laser processed grooves along the streets; and a processed groove finishing step of irradiating the wafer with the laser beam, which has a wavelength absorbable to the wafer, along the laser processed grooves formed by the processed groove formation step, while positioning a focus spot beyond the bottom of the laser processed grooves, thereby finishing both sides of the laser processed grooves.
摘要翻译：一种用于晶片的激光加工方法，具有由晶片表面上的格子状形成的街道限定的多个区域，所述多个区域具有形成在其中的多个器件，该方法被布置成沿着街道向激光束照射晶片从而沿着街道形成激光处理槽，包括：处理槽形成步骤，用于沿着街道将具有可吸收到波长的波长的激光束照射在晶片上，同时将聚焦点定位在激光束照射表面上从而沿着街道形成激光加工槽; 以及处理槽精加工步骤，沿着由加工槽形成步骤形成的激光加工槽，将具有可吸收到晶片的波长的激光束照射到晶片上，同时将焦点定位在激光加工槽的底部从而完成激光加工槽的两侧。

12. 发明申请

US20060203222A1 Wafer holding mechanism 有权
标题翻译：晶圆保持机构
公开(公告)号：US20060203222A1
公开(公告)日：2006-09-14
申请号：US11360814
申请日：2006-02-24
申请人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
发明人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
IPC分类号： G03B27/58
CPC分类号： G03F7/707 , B23K26/40 , B23K37/0408 , B23K2101/40 , B23K2103/50 , B25B11/005 , B28D5/0094 , H01L21/6838
摘要： To prevent heating of a holding table that holds a wafer when using a laser beam to process a wafer, a wafer holding mechanism has a wafer holder having a holding surface that holds a wafer and a suction part formed on an outer peripheral side of the wafer holder, with the wafer held to the holding surface by a suction force transmitted to the holding surface from the suction part through an outer peripheral edge part of the wafer holder. The wafer can be held in place with suction without forming fine holes that penetrate the wafer holder from a front surface thereof to a back surface thereof, and therefore a material of good permeability and dispersibility with respect to the wavelength of the laser light can be selected for the wafer holder.
摘要翻译：为了防止在使用激光束处理晶片时保持晶片的保持台的加热，晶片保持机构具有晶片保持器，该晶片保持器具有保持晶片的保持表面和形成在晶片的外周侧的吸引部分保持器，其中晶片通过来自抽吸部分的透镜通过晶片保持器的外周边缘部分传递到保持表面的吸力保持在保持表面上。可以通过抽吸将晶片保持在适当位置，而不会形成从其前表面到其后表面穿透晶片保持器的细孔，因此可以选择相对于激光的波长具有良好的渗透性和分散性的材料用于晶片座。

13. 发明授权

US07087857B2 Method of dividing a workpiece in the form of a plate having a layer and a substrate made of different materials 有权
标题翻译：将具有层的板和由不同材料制成的基板的工件分割的方法
公开(公告)号：US07087857B2
公开(公告)日：2006-08-08
申请号：US10914152
申请日：2004-08-10
申请人： Masaru Nakamura , Toshiyuki Yoshikawa , Satoshi Genda
发明人： Masaru Nakamura , Toshiyuki Yoshikawa , Satoshi Genda
IPC分类号： B23K26/38 , H01L21/301
CPC分类号： B28D5/022 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method of dividing a plate-like workpiece having a layer that is made of a different material from that of a substrate and is formed on the front surface of the substrate along predetermined dividing lines, comprising a laser beam application step for applying a laser beam to each dividing line formed on the plate-like workpiece except for a non-processed area in at least one end portion thereof to form grooves deeper than the layer; and a cutting step for cutting the plate-like workpiece along each dividing line by positioning a cutting blade on the side of the non-processed area in the dividing line where the grooves have been formed in the laser beam application step and moving the plate-like workpiece relative to the cutting blade while rotating the cutting blade.
摘要翻译：一种分割具有由不同材料制成的层的板状工件的方法，其特征在于，沿着预定分割线形成在所述基板的前表面上，并且沿着预定分割线形成具有不同材料的层的板状工件，所述方法包括：激光束施加步骤，到除了在其至少一个端部中的未处理区域之外的形成在板状工件上的每个分割线以形成比该层更深的凹槽; 以及切割步骤，用于通过在激光束施加步骤中在形成有槽的分割线中的未处理区域的侧面上定位切割刀片来沿着分割线切割板状工件，同时旋转切割刀片时相对于切割刀片的工件。

14. 发明申请

US20060009008A1 Method for the laser processing of a wafer 审中-公开
标题翻译：晶圆激光加工方法
公开(公告)号：US20060009008A1
公开(公告)日：2006-01-12
申请号：US11175155
申请日：2005-07-07
申请人： Yasuomi Kaneuchi , Yukio Morishige , Satoshi Genda , Satoshi Kobayashi , Toshio Tsuchiya , Ryugo Oba
发明人： Yasuomi Kaneuchi , Yukio Morishige , Satoshi Genda , Satoshi Kobayashi , Toshio Tsuchiya , Ryugo Oba
IPC分类号： H01L21/301 , B23K26/38
CPC分类号： H01L21/6836 , B23K26/03 , B23K26/032 , B23K26/0622 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/67092 , H01L21/78 , H01L2221/68327
摘要： A method for the laser processing of a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, the method comprising applying a pulse laser beam along streets for sectioning the plurality of devices to form grooves along the streets, wherein a pulse width of the pulse laser beam is set to 100 to 1,000 ns.
摘要翻译：一种用于激光加工晶片的方法，所述晶片具有由基板前表面上的绝缘膜和功能膜构成的层叠体构成的多个器件，所述方法包括：沿着街道施加脉冲激光束，多个装置沿着街道形成凹槽，其中脉冲激光束的脉冲宽度设定为100至1,000ns。

15. 发明申请

US20050101108A1 Semiconductor wafer dividing method 审中-公开
标题翻译：半导体晶圆分割方法
公开(公告)号：US20050101108A1
公开(公告)日：2005-05-12
申请号：US10981523
申请日：2004-11-05
申请人： Satoshi Genda , Masaru Nakamura
发明人： Satoshi Genda , Masaru Nakamura
IPC分类号： H01L21/301 , B23K26/40 , H01L21/00 , H01L21/46 , H01L21/78
CPC分类号： H01L21/67092 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A method of dividing a semiconductor wafer comprising semiconductor chips which are composed of a laminate consisting of an insulating film and a functional film formed on the front surface of a semiconductor substrate and which are sectioned by streets, into individual semiconductor chips by cutting the semiconductor wafer with a cutting blade along the streets, the method comprising a first groove forming step for forming a pair of first laser grooves in the laminate by applying a first laser beam to each of the streets at a distance wider than the width of the cutting blade; a second groove forming step for forming second laser grooves which reach the semiconductor substrate between the both outer sides of the pair of first laser grooves in the street by applying a second laser beam to the laminate of a region wider than the width of the cutting blade; and a cutting step for cutting the semiconductor substrate with the cutting blade along the second laser grooves.
摘要翻译：将由半导体衬底构成的层叠体构成的半导体晶片的半导体晶片的分割方法，该半导体晶片由半导体衬底的形成在半导体衬底的前表面上并被街道划分的功能膜组成，通过切割半导体晶片沿着街道具有切割刀片，该方法包括：第一槽形成步骤，用于通过以比切割刀片的宽度更宽的距离对每个街道施加第一激光束来形成层叠体中的一对第一激光槽; 第二槽形成步骤，用于通过将第二激光束施加到比所述切割刀片的宽度宽的区域的层叠体上，形成在所述一对第一激光槽的两个外侧之间到达所述半导体衬底的第二激光槽 ; 以及切割步骤，用于沿着第二激光槽切割具有切割刀片的半导体衬底。

16. 发明申请

US20080115891A1 Laser beam machining system 审中-公开
标题翻译：激光束加工系统
公开(公告)号：US20080115891A1
公开(公告)日：2008-05-22
申请号：US11986318
申请日：2007-11-20
申请人： Masanori Yoshida , Satoshi Genda , Toshio Tsuchiya
发明人： Masanori Yoshida , Satoshi Genda , Toshio Tsuchiya
IPC分类号： C23F1/08 , B05C13/00 , B05C9/10 , B05C9/12 , B23K26/36
CPC分类号： B23K26/0823 , B23K26/146 , H01L21/02076 , H01L21/30617 , H01L21/6708 , H01L21/78
摘要： A laser beam machining system includes: a chuck table for holding a wafer; a laser beam irradiation unit for irradiating the wafer held by a chuck table with a laser beam; a machining feeding unit for machining feed of the chuck table; and an indexing feeding unit for indexing feed of the chuck table, wherein the system further includes etching unit for etching the wafer having undergone laser beam machining, and a feeding unit for feeding the laser beam machined wafer held on the chuck table to the etching unit.
摘要翻译：激光束加工系统包括：用于保持晶片的卡盘台; 激光束照射单元，用于用激光束照射由卡盘台保持的晶片; 用于加工卡盘的进给的加工进给单元; 以及用于对所述卡盘台进给进行分度的分度供给单元，其中，所述系统还包括用于蚀刻经过激光束加工的晶片的蚀刻单元，以及将保持在所述卡盘台上的所述激光加工晶片馈送到所述蚀刻单元的进给单元。

17. 发明授权

US07179723B2 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US07179723B2
公开(公告)日：2007-02-20
申请号：US10986371
申请日：2004-11-12
申请人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
发明人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , B23K26/18 , B23K26/364 , H01L21/67092
摘要： A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
摘要翻译：一种用于通过将激光束施加到预定区域来处理晶片的激光束处理方法，包括以下步骤：在晶片的待处理表面上形成吸收激光束的树脂膜; 通过树脂膜将激光束施加到待加工晶片的表面; 并且在激光束施加步骤之后去除树脂膜。

18. 发明申请

US20060148211A1 Wafer dividing method 审中-公开
标题翻译：晶圆分割法
公开(公告)号：US20060148211A1
公开(公告)日：2006-07-06
申请号：US11324323
申请日：2006-01-04
申请人： Kenichi Iwasaki , Satoshi Genda , Toshio Tsuchiya
发明人： Kenichi Iwasaki , Satoshi Genda , Toshio Tsuchiya
IPC分类号： H01L21/78
CPC分类号： H01L21/67092 , B23K26/40 , B23K2103/50 , H01L21/78
摘要： A wafer dividing method for cutting a wafer having devices which are composed of a laminate laminated on the front surface of a substrate with a cutting blade along a plurality of streets for sectioning the devices, comprising the steps of a groove forming step for forming two grooves deeper than the thickness of the laminate at an interval larger than the thickness of the cutting blade by applying a laser beam along the streets formed on the wafer; an alignment step for picking up an image of the two grooves formed in the streets of the wafer by the above groove forming step and positioning the cutting blade at the center position between the two grooves based on the image; and a cutting step for moving the cutting blade and the wafer relative to each other while the cutting blade is rotated to cut the wafer along the streets having the two grooves formed therein, after the above alignment step.
摘要翻译：一种晶片分割方法，其特征在于，具有如下步骤：切割晶片，所述晶片具有由层叠在基板的前表面上的层叠的多个装置构成的切片，比通过沿着形成在晶片上的街道施加激光束以大于切割刀片的厚度的间隔比层压体的厚度更深; 对准步骤，用于通过上述槽形成步骤拾取形成在晶片的街道中的两个凹槽的图像，并且基于图像将切割刀片定位在两个凹槽之间的中心位置; 以及在上述对准步骤之后，在切割刀片旋转以沿着形成有两个凹槽的街道切割晶片的同时相对于彼此移动切割刀片和晶片的切割步骤。

19. 发明申请

US20060045511A1 Wafer dividing method 审中-公开
标题翻译：晶圆分割法
公开(公告)号：US20060045511A1
公开(公告)日：2006-03-02
申请号：US11211696
申请日：2005-08-26
申请人： Satoshi Genda
发明人： Satoshi Genda
IPC分类号： G03B7/26
CPC分类号： H01L21/78
摘要： A method of dividing a wafer having a plurality of streets formed on the front surface in a lattice pattern, devices formed in a plurality of areas sectioned by the plurality of streets, and a metal film formed on the back surface, into individual chips, comprising: a street cutting step for cutting the front surface of the wafer along the streets to form grooves, leaving an uncut portion having a predetermined thickness on the back surface side; and a cutting-off step for cutting off the uncut portion and the metal film by applying a laser beam to the uncut portion of the groove formed along the streets.
摘要翻译：将形成在前表面上的多个街道的晶片以格子图案分割的方法，形成在由多个街道分割的多个区域中的装置和形成在背面上的金属膜的方法分为单独的芯片，包括：街道切割步骤，用于沿街道切割晶片的前表面以形成凹槽，在背面侧留下具有预定厚度的未切割部分; 以及切割步骤，通过将激光束施加到沿着街道形成的凹槽的未切割部分来切除未切割部分和金属膜。

20. 发明申请

US20050106782A1 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US20050106782A1
公开(公告)日：2005-05-19
申请号：US10986371
申请日：2004-11-12
申请人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
发明人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
IPC分类号： B23K26/00 , B23K26/18 , B23K26/40 , B23K101/40 , H01L21/00 , H01L21/301 , H01L21/44 , H01L21/78
CPC分类号： H01L21/78 , B23K26/18 , B23K26/364 , H01L21/67092
摘要： A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
摘要翻译：一种用于通过将激光束施加到预定区域来处理晶片的激光束处理方法，包括以下步骤：在晶片的待处理表面上形成吸收激光束的树脂膜; 通过树脂膜将激光束施加到待加工晶片的表面; 并且在激光束施加步骤之后去除树脂膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式