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    • 14. 发明授权
    • Power-Shifted transmission for industrial vehicles
    • 工业车辆动力传动
    • US06257080B1
    • 2001-07-10
    • US09384345
    • 1999-08-27
    • Sang Ho Shin
    • Sang Ho Shin
    • F16H308
    • F16H3/093F16H2003/0936Y10T74/19219Y10T74/19233Y10T74/19242
    • A power-shifted transmission for industrial vehicles comprises a transmission casing and input and output shafts rotatably mounted on the transmission casing. The input and output shafts are drivingly connectable to each other through a forward shaft assembly, a reverse shaft assembly and an intermediate shaft assembly. The forward shaft assembly is rotatingly driven by the input shaft and operable to deliver the torque of the input shaft to the output shaft at a first or second forward gear ratio. The reverse shaft assembly is rotatingly driven by the forward shaft assembly and operable to deliver the torque of the input shaft to the output shaft at a first or second reverse gear ratio. The intermediate shaft assembly is rotatingly driven by the reverse shaft assembly and operable to deliver the torque of the input shaft to the output shaft at a third forward gear ratio.
    • 用于工业车辆的变速传动包括变速器壳体和可旋转地安装在变速器壳体上的输入和输出轴。 输入和输出轴通过前轴组件,反向轴组件和中间轴组件彼此可驱动地连接。 前轴组件由输入轴旋转驱动,并可操作以将输入轴的扭矩以第一或第二前进传动比传递到输出轴。 反向轴组件由前轴组件旋转驱动,并且可操作以以第一或第二倒档传动比将输入轴的扭矩输送到输出轴。 中间轴组件由反向轴组件旋转驱动,并且可操作以以第三前进传动比将输入轴的扭矩输送到输出轴。
    • 15. 发明授权
    • Memory device with sensing current-reducible memory cell array
    • 具有感应电流可降低的存储单元阵列的存储器件
    • US06169697A
    • 2001-01-02
    • US09340359
    • 1999-06-28
    • Sang Ho Shin
    • Sang Ho Shin
    • G11C702
    • G11C7/18G11C7/06
    • A memory device with skew-reducible memory cell arrangement, comprising a memory cell array being divided into a plurality of cell regions; a sense-amplifying means being comprised of a plurality of a first sense amplifiers disposed in the upper side of the memory cell and a plurality of second sense amplifiers disposed in the lower side of the memory cell array; a plurality of bit line pairs, each of bit line pairs being connected to the respective sense amplifiers and being divided into a plurality of bit line segment pairs; a connection means for connecting or disconnecting the bit line segment pairs to the sense amplifiers in accordance with a plurality of control signal pairs; and a control circuit for receiving a plurality of cell region selection signals for selecting corresponding one of the plurality of cell regions to generate the plurality of control signal pairs to the connection means.
    • 一种具有可逆减小存储单元布置的存储器件,包括被分成多个单元区域的存储单元阵列; 一种感测放大装置,包括设置在该存储单元的上侧的多个第一读出放大器和设置在该存储单元阵列下侧的多个第二读出放大器;多个位线对,每个 的位线对连接到相应的读出放大器并被分成多个位线段对; 连接装置,用于根据多个控制信号对将位线段对连接到所述读出放大器; 以及控制电路,用于接收用于选择所述多个单元区域中的相应一个单元区域的多个单元区域选择信号,以产生对所述连接装置的多个控制信号对。
    • 20. 发明授权
    • High voltage generator
    • 高压发生器
    • US6130829A
    • 2000-10-10
    • US474130
    • 1999-12-29
    • Sang Ho Shin
    • Sang Ho Shin
    • G11C5/14H02M3/18
    • G11C5/145
    • A high voltage generator generates a high voltage higher than a power-supply voltage by a predetermined potential in order to supplement a loss of a threshold potential of a transistor in a semiconductor memory device. The high voltage generator has each potential sensing unit for a standby mode and active mode. In case of the standby mode, the high voltage generator minimizes a current consumption, and stably generates a high voltage. In case of the active mode, the high voltage generator limits a potential variation width of high voltage, thereby stably generating a high voltage at a high-speed.
    • 高电压发生器产生比电源电压高预定电位的高电压,以补充半导体存储器件中的晶体管的阈值电位的损失。 高电压发生器具有用于待机模式和主动模式的每个潜在感测单元。 在待机模式的情况下,高电压发生器使电流消耗最小化,稳定地产生高电压。 在激活模式的情况下,高电压发生器限制高电压的电位变化宽度,从而稳定地高速地产生高电压。