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    • 13. 发明申请
    • DISPLAY APPARATUS
    • 显示设备
    • US20110019141A1
    • 2011-01-27
    • US12818766
    • 2010-06-18
    • Min-Ho YOONSeung-Ju LeeJong-Seong Kim
    • Min-Ho YOONSeung-Ju LeeJong-Seong Kim
    • G02F1/1333G02F1/1343
    • G02F1/1345G02F2001/13629H01L27/12H01L27/124
    • A display device is provided that improves product yield thereof. The display device according to the present invention includes: an insulation substrate; a plurality of gate pad metal layers disposed in a first direction on the substrate; a plurality of data pad metal layers disposed in a second direction on the substrate; a gate fanout unit connecting the gate pad metal layers and gate lines of a display area; a data fanout unit connecting the data pad metal layers and data lines of the display area; and a first insulating layer pattern on the gate pad metal layers, the data pad metal layers, the gate fanout unit, and the data fanout unit, wherein the first insulating layer pattern is partially removed on at least a portion of a region between two neighboring gate pad metal layers, or two neighboring data pad metal layers, thereby forming a first opening.
    • 提供了提高其产品收率的显示装置。 根据本发明的显示装置包括:绝缘基板; 在所述基板上沿第一方向设置的多个栅极焊盘金属层; 在所述基板上沿第二方向设置的多个数据焊盘金属层; 连接显示区域的栅极焊盘金属层和栅极线的栅极扇出单元; 数据扇出单元,连接数据垫金属层和显示区域的数据线; 以及栅极焊盘金属层上的第一绝缘层图案,数据焊盘金属层,栅极扇出单元和数据扇出单元,其中第一绝缘层图案在两个相邻的区域之间的区域的至少一部分上被部分去除 栅极焊盘金属层或两个相邻的数据焊盘金属层,从而形成第一开口。
    • 14. 发明申请
    • ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    • 有机薄膜晶体管基板及其制造方法
    • US20100173451A1
    • 2010-07-08
    • US12724265
    • 2010-03-15
    • Seung Hwan CHOKeun Kyu SongMin Ho Yoon
    • Seung Hwan CHOKeun Kyu SongMin Ho Yoon
    • H01L51/40H01L21/336
    • H01L51/0545H01L27/283H01L51/0558
    • The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
    • 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层,以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层,以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层,形成在薄膜晶体管的源电极和漏电极上,从而填充有机半导体层。