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11. 发明授权

US07663200B2 Integrated circuit device packaging structure and packaging method 失效
标题翻译：集成电路器件封装结构及封装方法
公开(公告)号：US07663200B2
公开(公告)日：2010-02-16
申请号：US11073726
申请日：2005-03-08
申请人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
发明人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
IPC分类号： H01L21/02
CPC分类号： H01L31/0203 , G11B7/13 , H01L25/167 , H01L31/02325 , H01L2224/16 , H01L2224/48227 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.
摘要翻译：提供了适用于接收短波长激光的集成电路器件的封装结构。引线安装基板被放置在具有光检测部分的集成电路装置的光接收表面的一侧。引线通过电极与集成电路器件电连接。集成电路器件和衬底用封装部分封装。基板在光检测部分上方的位置具有开口。

12. 发明授权

US07661964B2 Connecting parts and multilayer wiring board 失效
标题翻译：连接件和多层接线板
公开(公告)号：US07661964B2
公开(公告)日：2010-02-16
申请号：US11882028
申请日：2007-07-30
申请人： Kazuaki Suzuki , Masaki Taniguchi
发明人： Kazuaki Suzuki , Masaki Taniguchi
IPC分类号： H01R12/00
CPC分类号： H05K3/368 , H01R12/52 , H01R13/2414 , H05K1/186 , H05K3/325 , H05K3/4611 , H05K2201/0314 , H05K2201/0367 , H05K2201/10636 , H05K2201/10977 , Y02P70/611
摘要： A connecting part for ensuring a secure connection includes first connecting terminals that are arranged on one face of a supporting member and second connecting terminals that are arranged on the back face of the supporting member. The supporting member may have an elastic body. The connecting terminals are interconnected by conductive films which are formed on the face of the supporting member. Connecting parts are arranged between circuit boards on which electronic parts are mounted, and the circuit boards are mutually fixed in the state in which the connecting parts are compressed. The first and second connecting terminals are pushed against lands on the circuit boards by restoring force of the connecting parts, and then the circuit boards are electrically interconnected.
摘要翻译：用于确保安全连接的连接部分包括布置在支撑构件的一个面上的第一连接端子和布置在支撑构件的背面上的第二连接端子。支撑构件可以具有弹性体。连接端子由形成在支撑构件的表面上的导电膜互连。连接部件布置在其上安装电子部件的电路板之间，并且电路板在连接部件被压缩的状态下相互固定。第一和第二连接端子通过连接部件的恢复力而被推靠在电路板上的平台上，然后电路板电互连。

13. 发明申请

US20090261149A1 MOUNTING METHOD USING THERMOCOMPRESSION HEAD 有权
标题翻译：使用热电偶头的安装方法
公开(公告)号：US20090261149A1
公开(公告)日：2009-10-22
申请号：US12374240
申请日：2007-07-18
申请人： Kazutaka Furuta , Masaki Taniguchi
发明人： Kazutaka Furuta , Masaki Taniguchi
IPC分类号： B23K31/02
CPC分类号： H05K3/328 , B30B5/02 , B30B15/065 , H01L24/75 , H01L24/83 , H01L24/90 , H01L2224/16 , H01L2224/73204 , H01L2224/75 , H01L2224/75252 , H01L2224/75303 , H01L2224/75304 , H01L2224/75315 , H01L2224/75316 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01075 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/07811 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H05K3/305 , H05K2201/10674 , H05K2201/10977 , H05K2203/1189 , H01L2924/00
摘要： A mounting method is provided using a thermocompression head which can mount an electric component in a short time with high connection reliability. The method is provided for mounting an electric component on a wiring board by using a thermocompression head having an elastic pressure bonding member composed of an elastomer on a heatable metal head main body. In the method, after arranging an adhesive agent on a mounting region on the wiring board, an electric component is arranged on a mounting region, and the electric component is bonded on the wiring board by thermocompression by using the thermocompression head. At the time of performing thermocompression bonding, while pressing a top region of the electric component by a metal portion of the head main body, and adhesive in the vicinity of a side portion region of the electric component is pressed by a taper section of the elastic adhesive member.
摘要翻译：提供了一种使用热压头的安装方法，其可以在短时间内以高连接可靠性安装电气部件。该方法用于通过使用在可加热金属头主体上具有由弹性体构成的弹性压接构件的热压头将电气部件安装在布线板上。在该方法中，在布线基板的安装区域上配置粘合剂之后，在安装区域上配置电气部件，通过使用热压头通过热压接将电气部件接合在布线基板上。在进行热压接时，通过头主体的金属部分按压电气部件的顶部区域，并且电气部件的侧部区域附近的粘合剂被弹性部分的锥形部分挤压粘合剂。

14. 发明授权

US07211829B2 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US07211829B2
公开(公告)日：2007-05-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/15 , H01L31/113
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

15. 发明申请

US20060202761A1 Amplifier unit and optical disc drive 失效
标题翻译：放大器单元和光盘驱动器
公开(公告)号：US20060202761A1
公开(公告)日：2006-09-14
申请号：US11430241
申请日：2006-05-09
申请人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F3/45
CPC分类号： H03F3/3432 , H03F3/08 , H03F2200/78
摘要： An amplifier unit is provided, with which the need for manufacturing a photoelectric conversion IC in Bi-CMOS process is eliminated, and relatively low process cost of the photoelectric conversion IC is achieved. The input section of a buffer (the base of a transistor Q5) is connected with a plurality of patterns of phase compensation circuits each including a resistor and a capacitor connected in series. A bipolar transistor (Q6) is interposed between a positive power supply line and a capacitor (C2) forming a capacitance of the phase compensation circuit. By switching on/off the bipolar transistor (Q6), the capacitance value and resistance value of the phase compensation circuit are switched. Since the bipolar transistor (Q6) is interposed between the capacitor (C2) and the positive power supply line, base current (Isw) acting as a switch signal does not affect the amplifier unit.
摘要翻译：提供放大器单元，消除了在Bi-CMOS工艺中制造光电转换IC的需要，并且实现了光电转换IC的相对低的处理成本。缓冲器（晶体管Q 5的基极）的输入部分与多个相位补偿电路相连，每个相位补偿电路均包括串联连接的电阻器和电容器。在正电源线和形成相位补偿电路的电容的电容器（C 2）之间插入双极晶体管（Q6）。通过接通/关断双极晶体管（Q 6），相位补偿电路的电容值和电阻值被切换。由于双极晶体管（Q 6）插在电容器（C 2）和正电源线之间，所以作为开关信号的基极电流（Isw）不影响放大器单元。

16. 发明申请

US20050280015A1 Optical semiconductor device and manufacturing method for same 失效
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20050280015A1
公开(公告)日：2005-12-22
申请号：US11149258
申请日：2005-06-10
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
IPC分类号： H01L21/00 , H01L27/146 , H01L29/22 , H01L31/0216
CPC分类号： H01L31/02165 , H01L27/14685
摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
摘要翻译：形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜在防反射膜上以及在微反射镜上方的周边周围的膜。

17. 发明授权

US5554844A Passband-adjustable photo-detector for inverse photoemission spectroscopy 失效
标题翻译：用于逆光电子能谱的通带可调光电检测器
公开(公告)号：US5554844A
公开(公告)日：1996-09-10
申请号：US404554
申请日：1995-03-15
申请人： Hirofumi Namatame , Masaki Taniguchi
发明人： Hirofumi Namatame , Masaki Taniguchi
IPC分类号： G01N23/227 , G01J1/02 , G01J1/04 , G01N21/62 , G01N23/225 , G01N21/00 , G02F1/01 , H01L31/10
CPC分类号： G01N23/2251 , H01J2237/2445 , H01J2237/24485 , H01J2237/2516
摘要： A passband-adjustable photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged, so as to effect photo-detection, wherein said photo-detector comprises a photo-electron multiplier, a LiF monocrystal window and a CaF.sub.2 monocrystal window individually deposited with a KCl thin film in the front of a photo-electron multiplier in the photo-detector, wherein said windows means are provided for arbitrarily setting the temperature from the vicinity of liquid nitrogen temperature to the order of 150.degree. C., a photo-electron multiplier having a first dinode deposited a KCl thin film on a surface thereof said photo-electron multiplier, and an output of the photo electron multiplier is connected with a pulse counter circuit through an amplifier, so as to measure anyone selected from the group consisting of light absorption property, window transmissibility and sensitivity as a bandpass filter.
摘要翻译：一种用于逆光电子发射光谱的通带可调光检测器，其中来自电子枪的电子束被施加到样品上并且从其反射的光会聚，以便进行光检测，其中所述光检测器包括照片电子倍增器，在光电检测器中的光电子倍增器前面分别沉积有KCl薄膜的LiF单晶窗口和CaF 2单晶窗口，其中所述窗口装置用于任意设置温度从液氮温度为150℃左右，具有第一个二极管的光电子倍增器在其表面上沉积有KCl薄膜，所述光电子倍增器，光电子倍增器的输出与脉冲计数器电路通过放大器，以便测量从由光吸收特性，窗口传输性和灵敏度组成的组中选出的任何一个带通过滤器

18. 发明申请

US20050189546A1 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US20050189546A1
公开(公告)日：2005-09-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/144 , H01L27/15 , H01L31/0288 , H01L31/103
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

19. 发明授权

US5552595A Narrow band high sensitivity photodetector for inverse photoemission spectroscopy 失效
标题翻译：窄带高灵敏度光电探测器用于逆光电子能谱
公开(公告)号：US5552595A
公开(公告)日：1996-09-03
申请号：US404553
申请日：1995-03-15
申请人： Hirofumi Namatame , Masaki Taniguchi
发明人： Hirofumi Namatame , Masaki Taniguchi
IPC分类号： G01N23/227 , G01J1/02 , G01J1/04 , G01J1/42 , G01N21/62 , H01J43/10 , G01N21/00 , G02F1/01 , H01L31/10
CPC分类号： G01J1/429 , H01J43/10
摘要： A narrow band high sensitivity photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged into a photo-electron detector, so as to effect photo-electron detection in a photo-electron multiplier, wherein said photo-electron detector comprises a CaF.sub.2 monocrystal window provided with a KCl thin film in the front of said photo-electron detector, a first dynode deposited with a KCl thin film on a surface thereof, wherein an output of the photo-electron multiplier is applied with a pulse counter circuit through an amplifier, so as to measure light absorption properties, window transmissibility and detection sensitivity as a band pass filter.
摘要翻译：一种用于逆光电子发射光谱的窄带高灵敏度光检测器，其中将来自电子枪的电子束施加到样品上，并将从其反射的光会聚在光电子检测器中，以便实现光电子检测光电子倍增器，其中所述光电子检测器包括在所述光电子检测器的前面设置有KCl薄膜的CaF 2单晶窗口，在其表面上沉积有KCl薄膜的第一倍增电极，其中输出通过放大器施加脉冲计数器电路，以便测量作为带通滤波器的光吸收特性，窗口传输率和检测灵敏度。

20. 发明授权

US5340976A Bandpass photon detector for inverse photoemission spectroscopy 失效
标题翻译：用于逆光子发射光谱的带通光子检测器
公开(公告)号：US5340976A
公开(公告)日：1994-08-23
申请号：US33327
申请日：1993-03-18
申请人： Masaki Taniguchi , Toshiaki Ohta
发明人： Masaki Taniguchi , Toshiaki Ohta
IPC分类号： G01N23/227 , G01J1/42 , G01N21/62 , G01T1/28 , H01J43/08 , G01N23/22
CPC分类号： G01T1/28 , G01J1/429
摘要： A bandpass photon detector for inverse photoemission spectroscopy comprises a sample chamber and an analyzer chamber connected to a vacuum exhaust system, respectively; a photon detector connected to the analyzer chamber; the sample chamber and the analyzer chamber are switchably connected through a gate valve and provided with a sample transfer system for transferring a sample held at a center axial line of the sample chamber to a center portion of the analyzer chamber, the analyzer chamber is provided with an electron gun opposed to a sample positioned at a center where the sample is transferred and a photomultiplier comprising a low cut filter consisting of Cu-BeO at the opposite side of the electron gun, wherein a potassium chloride is deposited in a thickness of 500-1000 .ANG. on a first diode of said photomultiplier, thereby high inverse photoemission spectroscopy can be measured so as to analysis and estimation of semiconductors and magnetic material.
摘要翻译：用于逆光电子发射光谱的带通光子检测器分别包括连接到真空排气系统的样品室和分析器室; 连接到分析器室的光子检测器; 样品室和分析器室通过闸阀可切换地连接并设置有用于将保持在样品室的中心轴线处的样品转移到分析器室的中心部分的样品转移系统，分析器室设置有与位于样品转移中心的样品相对的电子枪和包含由电子枪相反侧的Cu-BeO构成的低切滤光片的光电倍增管，其中以500nm的厚度沉积氯化钾，可以测量所述光电倍增管的第一个二极管上的1000个ANGSTROM，从而可以测量高反射光电子能谱，以便分析和估计半导体和磁性材料。

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