专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080176421A1 Connecting parts and multilayer wiring board 失效
标题翻译：连接件和多层接线板
公开(公告)号：US20080176421A1
公开(公告)日：2008-07-24
申请号：US11882028
申请日：2007-07-30
申请人： Kazuaki Suzuki , Masaki Taniguchi
发明人： Kazuaki Suzuki , Masaki Taniguchi
IPC分类号： H01R12/22
CPC分类号： H05K3/368 , H01R12/52 , H01R13/2414 , H05K1/186 , H05K3/325 , H05K3/4611 , H05K2201/0314 , H05K2201/0367 , H05K2201/10636 , H05K2201/10977 , Y02P70/611
摘要： A connecting part for ensuring a secure connection includes first connecting terminals that are arranged on one face of a supporting member and second connecting terminals that are arranged on the back face of the supporting member. The supporting member may have an elastic body. The connecting terminals are interconnected by conductive films which are formed on the face of the supporting member. Connecting parts are arranged between circuit boards on which electronic parts are mounted, and the circuit boards are mutually fixed in the state in which the connecting parts are compressed. The first and second connecting terminals are pushed against lands on the circuit boards by restoring force of the connecting parts, and then the circuit boards are electrically interconnected.
摘要翻译：用于确保安全连接的连接部分包括布置在支撑构件的一个面上的第一连接端子和布置在支撑构件的背面上的第二连接端子。支撑构件可以具有弹性体。连接端子由形成在支撑构件的表面上的导电膜互连。连接部件布置在其上安装电子部件的电路板之间，并且电路板在连接部件被压缩的状态下相互固定。第一和第二连接端子通过连接部件的恢复力而被推靠在电路板上的平台上，然后电路板电互连。

2. 发明授权

US07661964B2 Connecting parts and multilayer wiring board 失效
标题翻译：连接件和多层接线板
公开(公告)号：US07661964B2
公开(公告)日：2010-02-16
申请号：US11882028
申请日：2007-07-30
申请人： Kazuaki Suzuki , Masaki Taniguchi
发明人： Kazuaki Suzuki , Masaki Taniguchi
IPC分类号： H01R12/00
CPC分类号： H05K3/368 , H01R12/52 , H01R13/2414 , H05K1/186 , H05K3/325 , H05K3/4611 , H05K2201/0314 , H05K2201/0367 , H05K2201/10636 , H05K2201/10977 , Y02P70/611
摘要： A connecting part for ensuring a secure connection includes first connecting terminals that are arranged on one face of a supporting member and second connecting terminals that are arranged on the back face of the supporting member. The supporting member may have an elastic body. The connecting terminals are interconnected by conductive films which are formed on the face of the supporting member. Connecting parts are arranged between circuit boards on which electronic parts are mounted, and the circuit boards are mutually fixed in the state in which the connecting parts are compressed. The first and second connecting terminals are pushed against lands on the circuit boards by restoring force of the connecting parts, and then the circuit boards are electrically interconnected.
摘要翻译：用于确保安全连接的连接部分包括布置在支撑构件的一个面上的第一连接端子和布置在支撑构件的背面上的第二连接端子。支撑构件可以具有弹性体。连接端子由形成在支撑构件的表面上的导电膜互连。连接部件布置在其上安装电子部件的电路板之间，并且电路板在连接部件被压缩的状态下相互固定。第一和第二连接端子通过连接部件的恢复力而被推靠在电路板上的平台上，然后电路板电互连。

3. 发明申请

US20050189546A1 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US20050189546A1
公开(公告)日：2005-09-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/144 , H01L27/15 , H01L31/0288 , H01L31/103
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

4. 发明授权

US5552595A Narrow band high sensitivity photodetector for inverse photoemission spectroscopy 失效
标题翻译：窄带高灵敏度光电探测器用于逆光电子能谱
公开(公告)号：US5552595A
公开(公告)日：1996-09-03
申请号：US404553
申请日：1995-03-15
申请人： Hirofumi Namatame , Masaki Taniguchi
发明人： Hirofumi Namatame , Masaki Taniguchi
IPC分类号： G01N23/227 , G01J1/02 , G01J1/04 , G01J1/42 , G01N21/62 , H01J43/10 , G01N21/00 , G02F1/01 , H01L31/10
CPC分类号： G01J1/429 , H01J43/10
摘要： A narrow band high sensitivity photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged into a photo-electron detector, so as to effect photo-electron detection in a photo-electron multiplier, wherein said photo-electron detector comprises a CaF.sub.2 monocrystal window provided with a KCl thin film in the front of said photo-electron detector, a first dynode deposited with a KCl thin film on a surface thereof, wherein an output of the photo-electron multiplier is applied with a pulse counter circuit through an amplifier, so as to measure light absorption properties, window transmissibility and detection sensitivity as a band pass filter.
摘要翻译：一种用于逆光电子发射光谱的窄带高灵敏度光检测器，其中将来自电子枪的电子束施加到样品上，并将从其反射的光会聚在光电子检测器中，以便实现光电子检测光电子倍增器，其中所述光电子检测器包括在所述光电子检测器的前面设置有KCl薄膜的CaF 2单晶窗口，在其表面上沉积有KCl薄膜的第一倍增电极，其中输出通过放大器施加脉冲计数器电路，以便测量作为带通滤波器的光吸收特性，窗口传输率和检测灵敏度。

5. 发明授权

US5340976A Bandpass photon detector for inverse photoemission spectroscopy 失效
标题翻译：用于逆光子发射光谱的带通光子检测器
公开(公告)号：US5340976A
公开(公告)日：1994-08-23
申请号：US33327
申请日：1993-03-18
申请人： Masaki Taniguchi , Toshiaki Ohta
发明人： Masaki Taniguchi , Toshiaki Ohta
IPC分类号： G01N23/227 , G01J1/42 , G01N21/62 , G01T1/28 , H01J43/08 , G01N23/22
CPC分类号： G01T1/28 , G01J1/429
摘要： A bandpass photon detector for inverse photoemission spectroscopy comprises a sample chamber and an analyzer chamber connected to a vacuum exhaust system, respectively; a photon detector connected to the analyzer chamber; the sample chamber and the analyzer chamber are switchably connected through a gate valve and provided with a sample transfer system for transferring a sample held at a center axial line of the sample chamber to a center portion of the analyzer chamber, the analyzer chamber is provided with an electron gun opposed to a sample positioned at a center where the sample is transferred and a photomultiplier comprising a low cut filter consisting of Cu-BeO at the opposite side of the electron gun, wherein a potassium chloride is deposited in a thickness of 500-1000 .ANG. on a first diode of said photomultiplier, thereby high inverse photoemission spectroscopy can be measured so as to analysis and estimation of semiconductors and magnetic material.
摘要翻译：用于逆光电子发射光谱的带通光子检测器分别包括连接到真空排气系统的样品室和分析器室; 连接到分析器室的光子检测器; 样品室和分析器室通过闸阀可切换地连接并设置有用于将保持在样品室的中心轴线处的样品转移到分析器室的中心部分的样品转移系统，分析器室设置有与位于样品转移中心的样品相对的电子枪和包含由电子枪相反侧的Cu-BeO构成的低切滤光片的光电倍增管，其中以500nm的厚度沉积氯化钾，可以测量所述光电倍增管的第一个二极管上的1000个ANGSTROM，从而可以测量高反射光电子能谱，以便分析和估计半导体和磁性材料。

6. 发明申请

US20090032896A1 OPTICAL SEMICONDUCTOR DEVICE 失效
标题翻译：光学半导体器件
公开(公告)号：US20090032896A1
公开(公告)日：2009-02-05
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/11
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

7. 发明授权

US07476839B2 Amplifier circuit for optical disk drive 有权
标题翻译：用于光盘驱动器的放大器电路
公开(公告)号：US07476839B2
公开(公告)日：2009-01-13
申请号：US10983737
申请日：2004-11-09
申请人： Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F3/06 , H03F3/45 , H03G3/00 , G11B11/00
CPC分类号： H03F3/08 , H03F3/45085 , H03F2203/45466 , H03G3/3084
摘要： An operational amplifier including a pair of differential input transistors is provided with a feedback resistor switching circuit and a variable current source. When a loaded optical disk is a DVD-ROM, the feedback resistor switching circuit reduces a gain of the operational amplifier and the variable current source selects a large current (of, for example, 1 mA) as a common bias current supplied to the differential input transistors. When the loaded optical disk is a DVD-RAM with low reflectance and low recording/reproducing speed, the feedback resistor switching circuit enhances the gain of the operational amplifier and the variable current source selects a small current (of, for example, 0.5 mA) as the common bias current.
摘要翻译：包括一对差分输入晶体管的运算放大器设置有反馈电阻器切换电路和可变电流源。当加载的光盘是DVD-ROM时，反馈电阻器开关电路降低运算放大器的增益，并且可变电流源选择大电流（例如，1mA）作为提供给差分器的公共偏置电流输入晶体管。当装载的光盘是具有低反射率和低记录/再现速度的DVD-RAM时，反馈电阻器切换电路增强了运算放大器的增益，并且可变电流源选择小电流（例如，0.5mA）作为常见的偏置电流。

8. 发明申请

US20080179501A1 Output impedance varying circuit 有权
公开(公告)号：US20080179501A1
公开(公告)日：2008-07-31
申请号：US12076788
申请日：2008-03-24
申请人： Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： G01J1/44
CPC分类号： H03F3/3069 , H03F1/08 , H03F1/56 , H03F3/08 , H03F3/087 , H03F3/343
摘要： A photo detector IC (PDIC) is connected with a flexible printed circuit board (FPC). A signal converted into a voltage through light-to-voltage conversion in the PDIC is connected with the drain of a field effect transistor (FET), while the source of the FET is connected to an output terminal. A signal from the output terminal is input into a signal processing board of the main body via the FPC serving as an equivalent circuit composed of a coil and a capacitor. The gate of the FET is connected with a variable voltage source. Peaking occurs due to inductor components and capacitance components of the FPC. However, by application of voltage to the variable voltage source, the gate voltage value of the FET is adjusted to be an optimal value, whereby the peaking is suppressed by the on-resistance of the FET.

9. 发明授权

US07391265B2 Amplifier unit and optical disc drive 失效
标题翻译：放大器单元和光盘驱动器
公开(公告)号：US07391265B2
公开(公告)日：2008-06-24
申请号：US11430241
申请日：2006-05-09
申请人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F3/45 , H03F3/08
CPC分类号： H03F3/3432 , H03F3/08 , H03F2200/78
摘要： An amplifier unit is provided, with which the need for manufacturing a photoelectric conversion IC in Bi-CMOS process is eliminated, and relatively low process cost of the photoelectric conversion IC is achieved. The input section of a buffer (the base of a transistor Q5) is connected with a plurality of patterns of phase compensation circuits each including a resistor and a capacitor connected in series. A bipolar transistor (Q6) is interposed between a positive power supply line and a capacitor (C2) forming a capacitance of the phase compensation circuit. By switching on/off the bipolar transistor (Q6), the capacitance value and resistance value of the phase compensation circuit are switched. Since the bipolar transistor (Q6) is interposed between the capacitor (C2) and the positive power supply line, base current (Isw) acting as a switch signal does not affect the amplifier unit.
摘要翻译：提供放大器单元，消除了在Bi-CMOS工艺中制造光电转换IC的需要，并且实现了光电转换IC的相对低的处理成本。缓冲器（晶体管Q 5的基极）的输入部分与多个相位补偿电路相连，每个相位补偿电路均包括串联连接的电阻器和电容器。在正电源线和形成相位补偿电路的电容的电容器（C 2）之间插入双极晶体管（Q6）。通过接通/关断双极晶体管（Q 6），相位补偿电路的电容值和电阻值被切换。由于双极晶体管（Q 6）插在电容器（C 2）和正电源线之间，所以作为开关信号的基极电流（Isw）不影响放大器单元。

10. 发明授权

US06924540B2 Integrated circuit device installed structure and installation method 有权
标题翻译：集成电路装置安装结构及安装方法
公开(公告)号：US06924540B2
公开(公告)日：2005-08-02
申请号：US10388617
申请日：2003-03-17
申请人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
发明人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
IPC分类号： G11B7/13 , G11B7/24 , H01L21/50 , H01L21/56 , H01L23/02 , H01L23/28 , H01L23/50 , H01L27/14 , H01L31/02 , H01L31/0203 , H01L47/00
CPC分类号： G11B7/13 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00012
摘要： A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. The integrated circuit device having a photo detecting part, leads and wires for connection therebetween are encapsulated in an encapsulation section. A recess is formed on the light incident surface of the encapsulation section above the photo detecting part, to thin the encapsulation section on the surface of the photo detecting part and thereby reduce the energy of light absorbed by the encapsulation section.
摘要翻译：提供了适用于接收短波长激光的集成电路器件的封装结构。具有光检测部分的集成电路器件，引线和用于连接的引线被封装在封装部分中。在光检测部分上方的封装部分的光入射表面上形成凹部，以使光检测部分的表面上的封装部分变薄，从而降低由封装部分吸收的光的能量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式