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    • 9. 发明授权
    • Bandpass photon detector for inverse photoemission spectroscopy
    • 用于逆光子发射光谱的带通光子检测器
    • US5340976A
    • 1994-08-23
    • US33327
    • 1993-03-18
    • Masaki TaniguchiToshiaki Ohta
    • Masaki TaniguchiToshiaki Ohta
    • G01N23/227G01J1/42G01N21/62G01T1/28H01J43/08G01N23/22
    • G01T1/28G01J1/429
    • A bandpass photon detector for inverse photoemission spectroscopy comprises a sample chamber and an analyzer chamber connected to a vacuum exhaust system, respectively; a photon detector connected to the analyzer chamber; the sample chamber and the analyzer chamber are switchably connected through a gate valve and provided with a sample transfer system for transferring a sample held at a center axial line of the sample chamber to a center portion of the analyzer chamber, the analyzer chamber is provided with an electron gun opposed to a sample positioned at a center where the sample is transferred and a photomultiplier comprising a low cut filter consisting of Cu-BeO at the opposite side of the electron gun, wherein a potassium chloride is deposited in a thickness of 500-1000 .ANG. on a first diode of said photomultiplier, thereby high inverse photoemission spectroscopy can be measured so as to analysis and estimation of semiconductors and magnetic material.
    • 用于逆光电子发射光谱的带通光子检测器分别包括连接到真空排气系统的样品室和分析器室; 连接到分析器室的光子检测器; 样品室和分析器室通过闸阀可切换地连接并设置有用于将保持在样品室的中心轴线处的样品转移到分析器室的中心部分的样品转移系统,分析器室设置有 与位于样品转移中心的样品相对的电子枪和包含由电子枪相反侧的Cu-BeO构成的低切滤光片的光电倍增管,其中以500nm的厚度沉积氯化钾, 可以测量所述光电倍增管的第一个二极管上的1000个ANGSTROM,从而可以测量高反射光电子能谱,以便分析和估计半导体和磁性材料。