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11. 发明授权

US07648917B2 Manufacturing method of solid-state imaging device 有权
标题翻译：固态成像装置的制造方法
公开(公告)号：US07648917B2
公开(公告)日：2010-01-19
申请号：US11857590
申请日：2007-09-19
申请人： Kai Yoshitsugu , Kenichi Chiba
发明人： Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L21/44 , H01L21/301 , H01L21/461
CPC分类号： H01L27/14689 , H01L27/14609 , H01L29/6653 , H01L29/6656 , H01L29/66575 , H01L29/78
摘要： A manufacturing method of a solid-state imaging device includes: forming a first and second insulating films having different properties on a silicon substrate such that they cover sides of gate electrodes formed on the silicon substrate; subjecting the second insulating film to selective etching, and forming sidewalls on the sides of the gate electrode; subjecting the gate electrode having the sidewalls formed to ion implantation; covering the gate electrode having the sidewalls formed and forming a third insulating film on the silicon substrate; covering with a mask material part of the gate electrodes covered with the third insulating film, and subjecting the substrate to etching to remove exposed third insulating film; and, after removing the mask material, forming a metal film capable of forming a silicide on the silicon substrate such that the metal film covers the gate electrodes and the third insulating film to form a silicide layer.
摘要翻译：固态成像装置的制造方法包括：在硅衬底上形成具有不同性质的第一和第二绝缘膜，使得它们覆盖形成在硅衬底上的栅电极的侧面; 对所述第二绝缘膜进行选择性蚀刻，并在所述栅电极的侧面上形成侧壁; 对具有形成的侧壁的栅电极进行离子注入; 覆盖形成有侧壁的栅电极，并在硅衬底上形成第三绝缘膜; 覆盖由第三绝缘膜覆盖的栅电极的掩模材料部分，并对基板进行蚀刻以去除暴露的第三绝缘膜; 并且在去除掩模材料之后，在硅衬底上形成能够形成硅化物的金属膜，使得金属膜覆盖栅电极和第三绝缘膜以形成硅化物层。

12. 发明授权

US08097486B2 Method for producing a solid-state imaging element 有权
标题翻译：固体摄像元件的制造方法
公开(公告)号：US08097486B2
公开(公告)日：2012-01-17
申请号：US12656925
申请日：2010-02-19
申请人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
发明人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L31/0224
摘要： There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
摘要翻译：提供了一种固态成像元件，其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。固体摄像元件包括：包含光接收部分的非硅化区域，其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁，形成为覆盖半导体层，栅极电极和侧壁的氢供应膜，以及形成在氢源上的自对准硅化物阻挡膜电影防止硅化。硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。

13. 发明申请

US20100167450A1 Solid-state imaging element and method for producing the same 有权
标题翻译：固态成像元件及其制造方法
公开(公告)号：US20100167450A1
公开(公告)日：2010-07-01
申请号：US12656925
申请日：2010-02-19
申请人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
发明人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L31/0224
摘要： There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
摘要翻译：提供了一种固态成像元件，其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。固体摄像元件包括：包含光接收部分的非硅化区域，其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁，形成为覆盖半导体层，栅极电极和侧壁的氢供应膜，以及形成在氢源上的自对准硅化物阻挡膜电影防止硅化。硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。

14. 发明申请

US20080237666A1 Solid-state imaging element and method for producing the same 有权
标题翻译：固态成像元件及其制造方法
公开(公告)号：US20080237666A1
公开(公告)日：2008-10-02
申请号：US12076792
申请日：2008-03-24
申请人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
发明人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L31/062 , H01L31/18
CPC分类号： H01L27/14689 , H01L31/0224
摘要： There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
摘要翻译：提供了一种固态成像元件，其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。固体摄像元件包括：包含光接收部分的非硅化区域，其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁，形成为覆盖半导体层，栅极电极和侧壁的氢供应膜，以及形成在氢源上的自对准硅化物阻挡膜电影防止硅化。硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。

15. 发明授权

US5789446A Therapeutic agent for treating joint diseases associated with arthritis 失效
标题翻译：用于治疗与关节炎相关的关节疾病的治疗剂
公开(公告)号：US5789446A
公开(公告)日：1998-08-04
申请号：US877459
申请日：1997-06-17
申请人： Akiyoshi Uchiyama , Kenzo Muramoto , Kenichi Chiba , Takashi Yamanaka , Isao Yamatsu
发明人： Akiyoshi Uchiyama , Kenzo Muramoto , Kenichi Chiba , Takashi Yamanaka , Isao Yamatsu
IPC分类号： A61K31/19 , A61K31/20
CPC分类号： A61K31/19 , A61K31/20
摘要： To provide a treating or ameliorating agent for joint diseases accompanied with arthritis, preferably, a rheumatoid arthritis or ameliorating agent, which exerts excellent pharmaceutical effects. The active ingredient is a quinone derivative represented by the following general formula (I) or pharmacologically acceptable salts thereof: ##STR1## wherein n is 0 or an integer of 1 to 12 and R is a methyl or methoxy group.
摘要翻译：提供伴随关节炎的关节疾病的治疗或改善剂，优选类风湿性关节炎或改善剂，其具有优异的药效。活性成分是由以下通式（I）表示的醌衍生物或其药理学上可接受的盐：其中n为0或1〜12的整数，R为甲基或甲氧基。

16. 发明授权

US5298649A Naphthalene derivative 失效
标题翻译：萘衍生物
公开(公告)号：US5298649A
公开(公告)日：1994-03-29
申请号：US774237
申请日：1991-10-10
申请人： Makoto Okita , Hiroshi Shirota , Masayuki Tanaka , Toshihiko Kaneko , Katsuya Tagami , Shigeki Hibi , Yasushi Okamoto , Seiichiro Nomoto , Takeshi Suzuki , Kenichi Chiba , Masaki Goto , Ryoichi Hashida , Hideki Ono , Hideto Ohhara , Hideki Sakurai , Shigeru Souda , Yoshimasa Machida , Kouichi Katayama , Isao Yamatsu
发明人： Makoto Okita , Hiroshi Shirota , Masayuki Tanaka , Toshihiko Kaneko , Katsuya Tagami , Shigeki Hibi , Yasushi Okamoto , Seiichiro Nomoto , Takeshi Suzuki , Kenichi Chiba , Masaki Goto , Ryoichi Hashida , Hideki Ono , Hideto Ohhara , Hideki Sakurai , Shigeru Souda , Yoshimasa Machida , Kouichi Katayama , Isao Yamatsu
IPC分类号： C07C39/225 , C07C43/215 , C07C43/23 , C07C43/30 , C07C43/313 , C07C43/315 , C07C45/00 , C07C45/29 , C07C45/30 , C07C45/51 , C07C45/54 , C07C45/59 , C07C45/63 , C07C45/71 , C07C47/57 , C07C47/575 , C07C49/83 , C07C49/84 , C07C59/68 , C07C69/157 , C07F7/18 , C07C69/76
CPC分类号： C07F7/1852 , C07C39/225 , C07C43/215 , C07C43/23 , C07C43/30 , C07C43/313 , C07C43/315 , C07C45/00 , C07C45/298 , C07C45/30 , C07C45/305 , C07C45/513 , C07C45/54 , C07C45/59 , C07C45/63 , C07C45/71 , C07C47/57 , C07C47/575 , C07C49/83 , C07C49/84 , C07C59/68
摘要： A naphthalene derivative having the formula is new and useful for medicine. ##STR1## wherein R.sup.1 represents a hydrogen atom, a lower alkyl group or an acyl group;R.sup.2 independently represents a hydrogen atom, a lower alkyl group, a lower alkoxy group, a halogen atom, a cycloalkyl group, a cycloalkylalkyl group, a hydroxyl group, an aryl group which may be substituted, an arylalkyl group whose aryl group may be substituted, a heteroaryl group, or a heteroarylalkyl group;R.sup.3 and R.sup.4 are the same or different and represent a hydrogen atom, a lower alkyl group, a lower alkenyl group, an aryl group which may have a substituent, an arylalkyl group whose aryl group may be substituted, an arylalkenyl group whose aryl group may be substituted, a cycloalkyl group, an alkoxyalkyl group, a heteroaryl group, a heteroarylalkyl group, a carboxyl group, a carboxyalkyl group, an aminoalkyl group, or a cyano group;R.sup.5 represents a group of the formula, --OR.sup.7, (wherein R.sup.7 represents a hydrogen atom or a lower alkyl group), or a group of the formula, ##STR2## (wherein R.sup.8 and R.sup.9 are the same or different and represent a hydrogen atom or a lower alkyl group.
摘要翻译：具有该式的萘衍生物是新的并且可用于药物。其中R 1表示氢原子，低级烷基或酰基; R2独立地表示氢原子，低级烷基，低级烷氧基，卤素原子，环烷基，环烷基烷基，羟基，可被取代的芳基，芳基可以被取代的芳基烷基杂芳基或杂芳基烷基; R3和R4相同或不同，表示氢原子，低级烷基，低级烯基，可以具有取代基的芳基，芳基可以被取代的芳基烷基，芳基可以被取代的芳基烯基烷氧基烷基，杂芳基，杂芳基烷基，羧基，羧基烷基，氨基烷基或氰基; R5表示式-OR7的基团（其中R7表示氢原子或低级烷基）或下式的基团，其中R8和R9相同或不同，表示氢原子或低级烷基。

17. 发明授权

US5262565A Naphthalene derivatives 失效
标题翻译：萘衍生物
公开(公告)号：US5262565A
公开(公告)日：1993-11-16
申请号：US790541
申请日：1991-11-12
申请人： Hiroyuki Yoshimura , Shinya Abe , Tetsuya Kawahara , Takashi Inoue , Hiroshi Shirota , Kenichi Chiba , Kenichi Kusube , Toru Horie , Takeshi Suzuki , Isao Yamatsu , Naoyuki Shimomura , Kazuo Okano , Richard S. J. Clark , Takashi Mori , Shuhei Miyazawa , Ryoichi Hashida , Kenzo Muramoto , Koukichi Harada
发明人： Hiroyuki Yoshimura , Shinya Abe , Tetsuya Kawahara , Takashi Inoue , Hiroshi Shirota , Kenichi Chiba , Kenichi Kusube , Toru Horie , Takeshi Suzuki , Isao Yamatsu , Naoyuki Shimomura , Kazuo Okano , Richard S. J. Clark , Takashi Mori , Shuhei Miyazawa , Ryoichi Hashida , Kenzo Muramoto , Koukichi Harada
IPC分类号： A61K31/165 , A61K31/19 , A61K31/192 , A61K31/197 , A61K31/215 , A61K31/22 , A61K31/222 , A61K31/275 , A61P19/02 , A61P25/04 , A61P29/00 , A61P43/00 , C07C39/40 , C07C43/20 , C07C43/23 , C07C43/253 , C07C45/00 , C07C47/575 , C07C59/52 , C07C59/64 , C07C59/72 , C07C59/84 , C07C59/90 , C07C69/157 , C07C69/734 , C07C69/738 , C07C235/34 , C07C251/48 , C07C255/41 , C07C62/06 , C07C69/76
CPC分类号： C07C255/41 , C07C251/48 , C07C39/40 , C07C43/202 , C07C43/23 , C07C43/253 , C07C45/00 , C07C47/575 , C07C59/52 , C07C59/64 , C07C59/72 , C07C59/90 , C07C69/734 , C07C69/738 , C07C2101/08
摘要： Compounds of the formula: ##STR1## where R.sup.1 is a hydrogen atom or a lower alkyl group;R.sub.2 is a lower alkoxy group;R.sub.3 is a hydroxyl or lower alkoxy group;Z is represented by the formula: ##STR2## where R.sub.2 and R.sub.3 may be the same or different from each other and each stands for a hydrogen atom or a lower alkyl;Y is represented by the formula: --(CH.sub.2).sub.n -- where n is 0 or an integer of 1 to 2 or a group represented by the formula: ##STR3## where R.sup.2 and R.sup.3 may be the same or different from each other and each stands for a lower alkyl group; andR.sup.4 represents a group of the formula: ##STR4## where p is 0 or an integer of 1 to 3 and R.sup.12 is hydrogen, a halogen atom, a lower alkyl or a lower alkoxy group a hydrogen atom, R.sup.2 is a methoxy group, R.sup.3 is a hydroxy group and R.sup.4 is a benzyl group having anti-inflammatory activity.

18. 发明授权

US07915306B2 Macrocyclic compounds useful as pharmaceuticals 有权
标题翻译：用作药物的大环化合物
公开(公告)号：US07915306B2
公开(公告)日：2011-03-29
申请号：US10657910
申请日：2003-09-09
申请人： Kenichi Chiba , Hong Du , Yoshihito Eguchi , Masanori Fujita , Masaki Goto , Fabian Gusovsky , Jean-Christophe Harmange , Atsushi Inoue , Megumi Kawada , Takatoshi Kawai , Yoshiyuki Kawakami , Akifumi Kimura , Makoto Kotake , Yoshikazu Kuboi , Tomohiro Matsushima , Yoshiharu Mizui , Kenzo Muramoto , Hideki Sakurai , Yong-Chun Shen , Hiroshi Shirota , Mark Spyvee , Isao Tanaka , John (Yuan) Wang , Ray Wood , Satoshi Yamamoto , Naoki Yoneda
发明人： Kenichi Chiba , Hong Du , Yoshihito Eguchi , Masanori Fujita , Masaki Goto , Fabian Gusovsky , Jean-Christophe Harmange , Atsushi Inoue , Megumi Kawada , Takatoshi Kawai , Yoshiyuki Kawakami , Akifumi Kimura , Makoto Kotake , Yoshikazu Kuboi , Tomohiro Matsushima , Yoshiharu Mizui , Kenzo Muramoto , Hideki Sakurai , Yong-Chun Shen , Hiroshi Shirota , Mark Spyvee , Isao Tanaka , John (Yuan) Wang , Ray Wood , Satoshi Yamamoto , Naoki Yoneda
IPC分类号： A61K31/335
CPC分类号： C07D493/04 , C07D313/00
摘要： The present invention provides compositions comprising compounds having formula (I): and additionally provides methods for the use thereof in the treatment of various disorders including inflammatory or autoimmune disorders, and disorders involving malignancy or increased angiogenesis, wherein R1-R11, X, Y, Z, and n are as defined herein. In certain embodiments, the compositions are for systemic (e.g., oral) administration. In certain embodiments, methods for the treatment of various disorders including inflammatory or autoimmune disorders comprise systemically (e.g., orally) administering to a subject in need thereof a therapeutically effective amount of a compound of formula (I).
摘要翻译：本发明提供了包含具有式（I）的化合物的组合物：另外提供了其用于治疗各种疾病（包括炎性或自身免疫性疾病）以及涉及恶性肿瘤或增加血管发生的疾病的方法，其中R1-R11，X，Y， Z和n如本文所定义。在某些实施方案中，组合物用于全身（例如口服）给药。在某些实施方案中，用于治疗各种疾病（包括炎性或自身免疫性疾病）的方法包括全身（例如，口服）向有需要的受试者施用治疗有效量的式（I）化合物。

19. 发明申请

US20080081394A1 MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置的制造方法
公开(公告)号：US20080081394A1
公开(公告)日：2008-04-03
申请号：US11857590
申请日：2007-09-19
申请人： Kai Yoshitsugu , Kenichi Chiba
发明人： Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L29/6653 , H01L29/6656 , H01L29/66575 , H01L29/78
摘要： A manufacturing method of a solid-state imaging device includes: forming a first and second insulating films having different properties on a silicon substrate such that they cover sides of gate electrodes formed on the silicon substrate; subjecting the second insulating film to selective etching, and forming sidewalls on the sides of the gate electrode; subjecting the gate electrode having the sidewalls formed to ion implantation; covering the gate electrode having the sidewalls formed and forming a third insulating film on the silicon substrate; covering with a mask material part of the gate electrodes covered with the third insulating film, and subjecting the substrate to etching to remove exposed third insulating film; and, after removing the mask material, forming a metal film capable of forming a silicide on the silicon substrate such that the metal film covers the gate electrodes and the third insulating film to form a silicide layer.
摘要翻译：固态成像装置的制造方法包括：在硅衬底上形成具有不同性质的第一和第二绝缘膜，使得它们覆盖形成在硅衬底上的栅电极的侧面; 对所述第二绝缘膜进行选择性蚀刻，并在所述栅电极的侧面上形成侧壁; 对具有形成的侧壁的栅电极进行离子注入; 覆盖形成有侧壁的栅电极，并在硅衬底上形成第三绝缘膜; 覆盖由第三绝缘膜覆盖的栅电极的掩模材料部分，并对基板进行蚀刻以去除暴露的第三绝缘膜; 并且在去除掩模材料之后，在硅衬底上形成能够形成硅化物的金属膜，使得金属膜覆盖栅电极和第三绝缘膜以形成硅化物层。

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