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    • 11. 发明授权
    • Manufacturing method of solid-state imaging device
    • 固态成像装置的制造方法
    • US07648917B2
    • 2010-01-19
    • US11857590
    • 2007-09-19
    • Kai YoshitsuguKenichi Chiba
    • Kai YoshitsuguKenichi Chiba
    • H01L21/44H01L21/301H01L21/461
    • H01L27/14689H01L27/14609H01L29/6653H01L29/6656H01L29/66575H01L29/78
    • A manufacturing method of a solid-state imaging device includes: forming a first and second insulating films having different properties on a silicon substrate such that they cover sides of gate electrodes formed on the silicon substrate; subjecting the second insulating film to selective etching, and forming sidewalls on the sides of the gate electrode; subjecting the gate electrode having the sidewalls formed to ion implantation; covering the gate electrode having the sidewalls formed and forming a third insulating film on the silicon substrate; covering with a mask material part of the gate electrodes covered with the third insulating film, and subjecting the substrate to etching to remove exposed third insulating film; and, after removing the mask material, forming a metal film capable of forming a silicide on the silicon substrate such that the metal film covers the gate electrodes and the third insulating film to form a silicide layer.
    • 固态成像装置的制造方法包括:在硅衬底上形成具有不同性质的第一和第二绝缘膜,使得它们覆盖形成在硅衬底上的栅电极的侧面; 对所述第二绝缘膜进行选择性蚀刻,并在所述栅电极的侧面上形成侧壁; 对具有形成的侧壁的栅电极进行离子注入; 覆盖形成有侧壁的栅电极,并在硅衬底上形成第三绝缘膜; 覆盖由第三绝缘膜覆盖的栅电极的掩模材料部分,并对基板进行蚀刻以去除暴露的第三绝缘膜; 并且在去除掩模材料之后,在硅衬底上形成能够形成硅化物的金属膜,使得金属膜覆盖栅电极和第三绝缘膜以形成硅化物层。
    • 12. 发明授权
    • Method for producing a solid-state imaging element
    • 固体摄像元件的制造方法
    • US08097486B2
    • 2012-01-17
    • US12656925
    • 2010-02-19
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • H01L21/00
    • H01L27/14689H01L31/0224
    • There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
    • 提供了一种固态成像元件,其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。 固体摄像元件包括:包含光接收部分的非硅化区域,其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。 非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁,形成为覆盖半导体层,栅极电极和侧壁的氢供应膜,以及形成在氢源上的自对准硅化物阻挡膜 电影防止硅化。 硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。
    • 13. 发明申请
    • Solid-state imaging element and method for producing the same
    • 固态成像元件及其制造方法
    • US20100167450A1
    • 2010-07-01
    • US12656925
    • 2010-02-19
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • H01L31/18
    • H01L27/14689H01L31/0224
    • There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
    • 提供了一种固态成像元件,其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。 固体摄像元件包括:包含光接收部分的非硅化区域,其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。 非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁,形成为覆盖半导体层,栅极电极和侧壁的氢供应膜,以及形成在氢源上的自对准硅化物阻挡膜 电影防止硅化。 硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。
    • 14. 发明申请
    • Solid-state imaging element and method for producing the same
    • 固态成像元件及其制造方法
    • US20080237666A1
    • 2008-10-02
    • US12076792
    • 2008-03-24
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • Hideo KidoKazuichiro ItonagaKai YoshitsuguKenichi Chiba
    • H01L31/062H01L31/18
    • H01L27/14689H01L31/0224
    • There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
    • 提供了一种固态成像元件,其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。 固体摄像元件包括:包含光接收部分的非硅化区域,其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。 非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁,形成为覆盖半导体层,栅极电极和侧壁的氢供应膜,以及形成在氢源上的自对准硅化物阻挡膜 电影防止硅化。 硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。
    • 19. 发明申请
    • MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE
    • 固态成像装置的制造方法
    • US20080081394A1
    • 2008-04-03
    • US11857590
    • 2007-09-19
    • Kai YoshitsuguKenichi Chiba
    • Kai YoshitsuguKenichi Chiba
    • H01L21/00
    • H01L27/14689H01L27/14609H01L29/6653H01L29/6656H01L29/66575H01L29/78
    • A manufacturing method of a solid-state imaging device includes: forming a first and second insulating films having different properties on a silicon substrate such that they cover sides of gate electrodes formed on the silicon substrate; subjecting the second insulating film to selective etching, and forming sidewalls on the sides of the gate electrode; subjecting the gate electrode having the sidewalls formed to ion implantation; covering the gate electrode having the sidewalls formed and forming a third insulating film on the silicon substrate; covering with a mask material part of the gate electrodes covered with the third insulating film, and subjecting the substrate to etching to remove exposed third insulating film; and, after removing the mask material, forming a metal film capable of forming a silicide on the silicon substrate such that the metal film covers the gate electrodes and the third insulating film to form a silicide layer.
    • 固态成像装置的制造方法包括:在硅衬底上形成具有不同性质的第一和第二绝缘膜,使得它们覆盖形成在硅衬底上的栅电极的侧面; 对所述第二绝缘膜进行选择性蚀刻,并在所述栅电极的侧面上形成侧壁; 对具有形成的侧壁的栅电极进行离子注入; 覆盖形成有侧壁的栅电极,并在硅衬底上形成第三绝缘膜; 覆盖由第三绝缘膜覆盖的栅电极的掩模材料部分,并对基板进行蚀刻以去除暴露的第三绝缘膜; 并且在去除掩模材料之后,在硅衬底上形成能够形成硅化物的金属膜,使得金属膜覆盖栅电极和第三绝缘膜以形成硅化物层。