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11. 发明授权

US07884033B2 Method of depositing fluids within a microelectric topography processing chamber 有权
标题翻译：在微电子地形处理室内沉积流体的方法
公开(公告)号：US07884033B2
公开(公告)日：2011-02-08
申请号：US12616367
申请日：2009-11-11
申请人： Igor C. Ivanov
发明人： Igor C. Ivanov
IPC分类号： H01L21/31 , H05K7/00 , B05B7/06 , B05D3/12 , B65H1/00
CPC分类号： H01L21/76841 , B82Y30/00 , C23C18/1619 , C23C18/1651 , C23C18/1682 , C23C18/1683 , C25D5/08 , C25D7/12 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , Y10T428/12 , Y10T428/12458 , Y10T428/24479 , Y10T428/24612 , H01L2924/00
摘要： An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.
摘要翻译：提供了一种用于处理微电子拓扑的装置，这种装置的使用方法以及用于钝化微电子处理室的硬件的方法。该装置包括：衬底保持器，其构造成支撑微电子形貌;以及旋转壳体，其具有布置在衬底保持器的相对侧上的侧壁。使用这种装置的方法包括将微电子形貌定位在处理室的衬底保持器上，将微电子拓扑暴露于处理室内的流体，以及旋转处理室的壳体。旋转足以影响流体相对于微电子拓扑的表面的运动。用于钝化微电子处理室的硬件的方法包括将硬件暴露于有机化合物，随后将硬件暴露于配置为与有机化合物形成极性键的试剂。

12. 发明申请

US20110014489A1 Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers 审中-公开
标题翻译：加强与金属层相邻的介电层之间的粘附强化方法
公开(公告)号：US20110014489A1
公开(公告)日：2011-01-20
申请号：US12889688
申请日：2010-09-24
申请人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
IPC分类号： B32B15/00 , B32B3/02 , B05D5/12 , B05D3/06 , B05C11/00
CPC分类号： H01L21/64 , C23C8/02 , C23C18/1605 , C23C18/1632 , C23C18/1683 , C23C18/1803 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , H01L21/288 , H01L21/321 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76874 , Y10T428/1241 , Y10T428/12493 , Y10T428/12549 , Y10T428/23 , Y10T428/24628
摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
摘要翻译：提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。在一些情况下，可以基于分析来调整流体的组成。

13. 发明申请

US20100279002A1 Systems and Methods Affecting Profiles of Solutions Dispensed Across Microelectronic Topographies During Electroless Plating Processes 有权
标题翻译：系统和方法影响化学镀过程中微电子拓扑图中分配的解决方案
公开(公告)号：US20100279002A1
公开(公告)日：2010-11-04
申请号：US12838643
申请日：2010-07-19
申请人： Igor C. Ivanov
发明人： Igor C. Ivanov
IPC分类号： H05K3/00 , B05D1/02 , B05D5/00 , B05D3/04 , B05B15/00
CPC分类号： H01L21/76841 , B82Y30/00 , C23C18/1619 , C23C18/1651 , C23C18/1682 , C23C18/1683 , C25D5/08 , C25D7/12 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , Y10T428/12 , Y10T428/12458 , Y10T428/24479 , Y10T428/24612 , H01L2924/00
摘要： A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography. An exemplary microelectronic topography resulting from the aforementioned methods and apparatuses includes a layer having distinct regions each including a comparatively different thickness and comparatively different concentrations of one of the one or more elements.
摘要翻译：提供了一种方法，其包括在化学镀处理期间在不同时刻在微电子拓扑的中心延伸不同距离的多个位置分配沉积溶液。用于该方法的无电电镀装置包括基板保持件，可移动分配臂和存储介质，该存储介质包括可由处理器执行的用于定位可移动分配臂的程序指令。另一种方法和伴随的无电镀沉积室被配置成将气体引入位于微电子拓扑上方的板上方的化学镀室中，并将气体分布到在微电子拓扑的一个或多个离散部分上方延伸的区域。由上述方法和装置产生的示例性微电子拓扑包括具有不同区域的层，每个区域包括相对不同的厚度和相对不同浓度的一种或多种元素之一。

14. 发明授权

US07779782B2 Systems and methods affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes 有权
标题翻译：影响化学镀过程中分布在微电子拓扑图上的溶液分布的系统和方法
公开(公告)号：US07779782B2
公开(公告)日：2010-08-24
申请号：US11200324
申请日：2005-08-09
申请人： Igor C. Ivanov
发明人： Igor C. Ivanov
IPC分类号： B05C11/00 , B05B3/00
CPC分类号： H01L21/76841 , B82Y30/00 , C23C18/1619 , C23C18/1651 , C23C18/1682 , C23C18/1683 , C25D5/08 , C25D7/12 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , Y10T428/12 , Y10T428/12458 , Y10T428/24479 , Y10T428/24612 , H01L2924/00
摘要： A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography. An exemplary microelectronic topography resulting from the aforementioned methods and apparatuses includes a layer having distinct regions each including a comparatively different thickness and comparatively different concentrations of one of the one or more elements.
摘要翻译：提供了一种方法，其包括在化学镀处理期间在不同时刻在微电子拓扑的中心延伸不同距离的多个位置分配沉积溶液。用于该方法的无电电镀装置包括基板保持件，可移动分配臂和存储介质，该存储介质包括可由处理器执行的用于定位可移动分配臂的程序指令。另一种方法和伴随的无电镀沉积室被配置成将气体引入位于微电子拓扑上方的板上方的化学镀室中，并将气体分布到在微电子拓扑的一个或多个离散部分上方延伸的区域。由上述方法和装置产生的示例性微电子拓扑包括具有不同区域的层，每个区域包括相对不同的厚度和相对不同浓度的一种或多种元素之一。

15. 发明授权

US07714441B2 Barrier layer configurations and methods for processing microelectronic topographies having barrier layers 有权
标题翻译：阻挡层构造和处理具有阻挡层的微电子拓扑图的方法
公开(公告)号：US07714441B2
公开(公告)日：2010-05-11
申请号：US11199621
申请日：2005-08-09
申请人： Igor C. Ivanov
发明人： Igor C. Ivanov
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L21/76841 , B82Y30/00 , C23C18/1619 , C23C18/1651 , C23C18/1682 , C23C18/1683 , C25D5/08 , C25D7/12 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , Y10T428/12 , Y10T428/12458 , Y10T428/24479 , Y10T428/24612 , H01L2924/00
摘要： A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.
摘要翻译：微电子拓扑结构包括具有高于相邻体金属特征（BMF）的表面的介电层（DL），并且还包括在BMF上的延伸高于DL的阻挡层（BL）。另一微电子拓扑包括具有金属元素浓度的金属氧化物层的BL，其相对于在金属氧化物层的任一侧上的金属合金层内的元素的浓度是不成比例的。一种方法包括在BMF上形成BL，使得与BMF相邻的第一DL的部分被暴露，在BL上选择性地沉积第二DL，然后清洁其形貌，以及在清洁的形貌上覆盖沉积第三DL。另一种方法包括抛光微电子拓扑，使得金属化层与DL共面，并且还包括在抛光的形貌上喷射去离子水基流体以从DL去除碎屑。

16. 发明授权

US07648913B2 Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth 有权
标题翻译：用薄膜生长的温度控制阶段的薄金属和介电膜的无电沉积方法
公开(公告)号：US07648913B2
公开(公告)日：2010-01-19
申请号：US11533042
申请日：2006-09-19
申请人： Igor C. Ivanov
发明人： Igor C. Ivanov
IPC分类号： H01L21/44 , B05D1/18
CPC分类号： C23C18/1651 , C23C18/168 , H01L21/288
摘要： A film formation method is provided which includes positioning an object within an electroless deposition apparatus having means for instantaneous temperature control of the object and electrolessly depositing a material upon the object. More specifically, the method includes instantaneously changing the temperature of the object by the means of instantaneous control at one or more predetermined times during the step of electrolessly depositing the material, wherein the predetermined times correspond to different film-growth stages of the material.
摘要翻译：提供一种成膜方法，其包括将物体定位在无电沉积设备内，具有用于物体的瞬时温度控制的装置和将材料无电沉积在物体上。更具体地，该方法包括在无电沉积材料的步骤期间通过瞬时控制的方式在一个或多个预定时间瞬间改变物体的温度，其中预定时间对应于材料的不同的膜生长阶段。

17. 发明授权

US07393414B2 Methods and systems for processing a microelectronic topography 有权
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US07393414B2
公开(公告)日：2008-07-01
申请号：US11102143
申请日：2005-04-08
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： B05B1/28 , B05B15/12 , B05C11/02 , C25C14/00
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

18. 发明申请

US20120263869A1 Methods for Forming a Barrier Layer with Periodic Concentrations of Elements and Structures Resulting Therefrom 审中-公开
标题翻译：形成具有周期性元素和结构浓度的阻挡层的方法
公开(公告)号：US20120263869A1
公开(公告)日：2012-10-18
申请号：US13533692
申请日：2012-06-26
申请人： Igor C. Ivanov
发明人： Igor C. Ivanov
IPC分类号： B05D5/00 , B05D3/02
CPC分类号： H01L21/76841 , B82Y30/00 , C23C18/1619 , C23C18/1651 , C23C18/1682 , C23C18/1683 , C25D5/08 , C25D7/12 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , Y10T428/12 , Y10T428/12458 , Y10T428/24479 , Y10T428/24612 , H01L2924/00
摘要： A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.
摘要翻译：提供了一种方法，其包括在无电沉积工艺期间分配和去除不同的沉积溶液以形成复合层的不同子膜。另一种方法包括通过无电沉积工艺形成膜，随后退火微电子拓扑以诱导膜内的元素的扩散。另一种方法包括从单个沉积溶液重复不同的沉积生长机理，即界面无电还原和化学吸附，以形成复合层的不同子膜。由一种或多种方法产生的微电子拓扑包括与具有第一元素的体积浓度的结构接触形成的膜。膜具有周期性的连续区域，每个区域各自包括浓度高于设定量的第二元素的区域和具有第二元素的浓度小于设定量的区域。

19. 发明申请

US20120213914A1 Apparatus and Method for Electroless Deposition of Materials on Semiconductor Substrates 有权
标题翻译：半导体衬底上材料的无电沉积的装置和方法
公开(公告)号：US20120213914A1
公开(公告)日：2012-08-23
申请号：US13408039
申请日：2012-02-29
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： B05D5/12
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的水等，以及用于在压力下供应气体的端口。该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

20. 发明授权

US08003159B2 Methods and systems for processing a microelectronic topography 有权
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US08003159B2
公开(公告)日：2011-08-23
申请号：US11108589
申请日：2005-04-18
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： B05D3/04
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

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