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    • 15. 发明授权
    • Integrated conductor magnetic recording head and suspension having
cross-over integrated circuits for noise reduction
    • 具有用于降噪的交叉集成电路的集成导体磁记录头和悬架
    • US5871655A
    • 1999-02-16
    • US044491
    • 1998-03-19
    • Edward Hin Pong LeeRandall George Simmons
    • Edward Hin Pong LeeRandall George Simmons
    • G11B5/48G11B23/00G11B5/235
    • G11B5/4853G11B23/0007Y10T29/49048
    • The present invention is an integral magnetic head suspension and method for making the same. The integral suspension, with or without the head, contains integrated conductive circuits that have multiple cross overs for noise reduction. The suspension is fabricated completely on silicon (Si) wafers using semiconductor processes. A N+ silicon layer is disposed over a P- silicon wafer. The N+ silicon layer and the P- silicon water are thermally oxidized to generate a bottom silicon oxide layer opposite the N+ layer side of the wafer and a top silicon oxide layer on the N+ side of the wafer, and to drive the N+ silicon into the P- silicon wafer. A layer of polysilicon is disposed over the silicon oxide layer on top of the N+ silicon layer. One or more pairs of conductive traces having multiple cross-overs are fabricated on the layer of polysilicon. Optimally, a magnetic head is simultaneously fabricated on the suspension. The polysilicon layer is then patterned to define the head structure and suspension structure as one piece. Finally, the magnetic head and suspension are separated from the wafer by removing the first silicon oxide layer by a chemical etchant and the P- silicon wafer by selective etching. The head and suspension are released from the silicon wafer as a single structure using the above-described semiconductor processes. Accordingly, no grinding or cutting is used to define the dimensions of the head. Further, no processes are required to attach the head to the suspension and the suspension can be made from low mass materials such as silicon (Si) or Al.sub.2 O.sub.3.
    • 本发明是一种整体磁头悬挂及其制造方法。 具有或不具有头部的整体悬架包含具有多个交叉以用于降噪的集成导电电路。 使用半导体工艺,在硅(Si)晶片上完全制造悬浮液。 N +硅层设置在P-硅晶片上。 N +硅层和P-硅水被热氧化以产生与晶片的N +层侧相对的底部氧化硅层和在晶片的N +侧上的顶部氧化硅层,并将N +硅驱入 P-硅晶片。 在N +硅层顶部的氧化硅层之上设置一层多晶硅。 在多晶硅层上制造具有多重交叉的一对或多对导电迹线。 最佳地,在悬架上同时制造磁头。 然后将多晶硅层图案化以将头部结构和悬挂结构定义为一体。 最后,通过化学蚀刻剂和P-硅晶片通过选择性蚀刻去除第一氧化硅层,将磁头和悬浮液与晶片分离。 使用上述半导体工艺,头和悬浮液作为单一结构从硅晶片释放。 因此,不使用研磨或切割来限定头部的尺寸。 此外,不需要将头部附接到悬架上,并且悬架可以由诸如硅(Si)或Al 2 O 3的低质量材料制成。