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11. 发明授权

US5272710A Stress-free mounting and protection of liquid-cooled solid-state laser media 失效
标题翻译：无压力安装和保护液冷固体激光介质
公开(公告)号：US5272710A
公开(公告)日：1993-12-21
申请号：US941626
申请日：1992-09-08
申请人： David S. Sumida , Robert W. Byren
发明人： David S. Sumida , Robert W. Byren
IPC分类号： H01S3/04 , H01S3/042 , H01S3/05 , H01S3/16
CPC分类号： H01S3/042 , H01S3/025 , H01S3/0407 , H01S3/061 , H01S3/1611 , H01S3/1653
摘要： A laser structure that reduces thermally-induced mounting stress on low fracture strength solid-state laser rods. A transparent sleeve of relatively high strength optical material that has relatively high thermal conductivity is provided around the laser rod, and a thin layer of elastomer is provided between the laser material and the transparent sleeve. This arrangement of laser material, transparent sleeve, and elastomer allows sealing of a cooling fluid flow channel disposed around the laser/sleeve assembly using conventional means without applying stress directly to the laser rod material. This reduces the risk of fracturing the laser rod material due to thermal expansion near the seal and allows the laser to be operated at higher average power levels. The elastomer layer and high thermal conductivity sleeve efficiently conduct heat from the laser rod to the surrounding cooling liquid. This structure also minimizes damage to the surface of the strengthened laser rods due to handling and coolant erosion thereby preserving the thermal stress fracture resistance properties of the laser rod during transport, manufacturing assembly, operation, and maintenance.

12. 发明申请

US20100226407A1 LASER MEDIA WITH CONTROLLED CONCENTRATION PROFILE OF ACTIVE LASER IONS AND METHOD OF MAKING THE SAME 有权
标题翻译：具有主动激光离子控制浓度分布的激光介质及其制造方法
公开(公告)号：US20100226407A1
公开(公告)日：2010-09-09
申请号：US12397082
申请日：2009-03-03
申请人： Kevin W. Kirby , David S. Sumida
发明人： Kevin W. Kirby , David S. Sumida
IPC分类号： H01S3/14 , H01L21/00
CPC分类号： H01S3/0617 , C30B29/28 , C30B31/08 , C30B31/18 , H01S3/061 , H01S3/08045 , H01S3/1618 , H01S3/1643
摘要： A laser medium comprises a solid-state host material and dopant species provided within the solid-state host material. A first portion of the dopant species has a first valence state, and a second portion of the dopant species has a second valence state. In an embodiment, a concentration of the first portion of the dopant species decreases radially with increasing distance from a center of the medium, and a concentration of the second portion of the dopant species increases radially with increasing distance from the center of the medium. The laser medium further comprises impurities within the solid-state host material, the impurities converting the first portion of the dopant species having the first valence state into the second portion of dopant species having the second valence state.
摘要翻译：激光介质包括固态主体材料和设置在固态主体材料内的掺杂物质。掺杂剂物质的第一部分具有第一价态，并且掺杂剂物质的第二部分具有第二价态。在一个实施方案中，掺杂剂物质的第一部分的浓度随着距离介质中心的距离增加而径向减小，并且掺杂剂物质的第二部分的浓度随着距离介质中心的距离增加而径向增加。激光介质还包括在固态主体材料内的杂质，杂质将具有第一价态的掺杂物种的第一部分转化成具有第二价态的掺杂物种的第二部分。

13. 发明授权

US07633981B2 Reverse oxidation post-growth process for tailored gain profile in solid-state devices 有权
标题翻译：反向氧化后生长过程，用于固态器件中定制的增益曲线
公开(公告)号：US07633981B2
公开(公告)日：2009-12-15
申请号：US11584695
申请日：2006-10-20
申请人： David S. Sumida , Kevin W. Kirby
发明人： David S. Sumida , Kevin W. Kirby
IPC分类号： H01S3/14
CPC分类号： C30B31/00 , C30B29/20 , C30B33/005 , H01S3/061 , H01S3/0617 , H01S3/1618 , H01S3/1643
摘要： A laser rod is provided having a tailored gain profile such that the quality of the output beam is enhanced. The laser rod has a concentration of active substitutional ions that is relatively high at the center of the rod and decreases to the surface of the rod. The laser rod further has a concentration of pre-active laser ions that is relatively high at the surface of the rod and decreases to the center of the rod. Methods are disclosed for creating a layer of inactive laser species in the near surface region of a laser rod using substitutional dopant ions and for creating a laser rod with a tailored gain profile such that the quality of the output beam is enhanced.
摘要翻译：提供具有定制增益分布的激光棒，使得输出光束的质量得到增强。激光棒具有在杆的中心处相对高的活性取代离子的浓度并且减小到棒的表面。激光棒还具有在杆的表面处相对较高的预激活激光离子的浓度并且降低到棒的中心。公开了用于使用替代掺杂离子在激光棒的近表面区域中产生无活性激光物质层的方法，并且用于产生具有定制的增益分布的激光棒，使得输出光束的质量得到增强。

14. 发明授权

US5724372A Diode-pumped laser system using uranium-doped Q-switch 失效
标题翻译：使用铀掺杂Q开关的二极管泵浦激光系统
公开(公告)号：US5724372A
公开(公告)日：1998-03-03
申请号：US590012
申请日：1996-01-22
申请人： Robert D. Stultz , David S. Sumida , Milton Birnbaum
发明人： Robert D. Stultz , David S. Sumida , Milton Birnbaum
IPC分类号： H01S3/067 , H01S3/0941 , H01S3/113 , H01S3/16 , H01S3/17 , H01S3/11
CPC分类号： H01S3/067 , H01S3/113 , H01S3/0941 , H01S3/09415 , H01S3/1608 , H01S3/1643 , H01S3/1698 , H01S3/175
摘要： A laser system includes a laser resonator cavity having a resonant path and an Er,Yb:glass lasing element with an output of from about 1.5 to about 1.6 micrometers within the laser resonator cavity. A diode array optically pumps the lasing element to emit light. A Q-switch lies along the resonant path within the laser resonator cavity. The Q-switch is formed of a host material having a concentration of uranium ions therein, so as to be a saturable absorber of the light emitted by the lasing element. The Q-switch is preferably a uranium-doped fluoride such as U:CaF.sub.2, U:SrF.sub.2, or U:BaF.sub.2.
摘要翻译：激光系统包括具有谐振路径的激光谐振腔和在激光谐振腔内具有约1.5至约1.6微米的输出的Er，Yb：玻璃激光元件。二极管阵列光学泵浦激光发光。 Q开关位于激光谐振腔内的谐振路径上。 Q开关由其中具有铀离子浓度的主体材料形成，以便是由激光元件发射的光的可饱和吸收体。 Q开关优选为铀掺杂的氟化物，例如U：CaF 2，U：SrF 2或U：BaF 2。

15. 发明授权

US09178329B2 Laser design 有权
标题翻译：激光设计
公开(公告)号：US09178329B2
公开(公告)日：2015-11-03
申请号：US13470081
申请日：2012-05-11
申请人： Barry A. Wechsler , Michael P. Scripsick , David S. Sumida , Thomas G. Crow
发明人： Barry A. Wechsler , Michael P. Scripsick , David S. Sumida , Thomas G. Crow
IPC分类号： H01S3/04 , H01S3/06 , C30B19/12 , C30B29/32 , H01S3/094 , H01S3/0941 , H01S3/16
CPC分类号： H01S3/0602 , C30B19/12 , C30B29/32 , H01S3/0408 , H01S3/0604 , H01S3/0612 , H01S3/09408 , H01S3/094084 , H01S3/0941 , H01S3/1618 , H01S3/1675
摘要： A laser gain element including an undoped layer of a monoclinic double tungstate (MDT) crystal, and a method of forming a laser gain element are provided. The laser gain element includes a layer of doped MDT crystal adjacent to the undoped layer, the doped MDT layer including a pre-selected concentration of rare earth ions. The layer of doped MDT crystal has an absorption peak at a first wavelength and an emission peak at a second wavelength longer than the first wavelength; and the layer of doped MDT crystal has a fluorescence emission with a weighted average at a third wavelength shorter than the first wavelength. A laser resonator cavity formed with a plurality of composite gain elements as above is also provided.
摘要翻译：提供了包括单斜晶双晶钨酸盐（MDT）晶体的未掺杂层的激光增益元件以及形成激光增益元件的方法。激光增益元件包括与未掺杂层相邻的掺杂MDT晶体层，掺杂的MDT层包括预先选择的稀土离子浓度。掺杂的MDT晶体层在第一波长处具有吸收峰，并且在比第一波长长的第二波长处具有发射峰; 并且掺杂的MDT晶体层具有在比第一波长短的第三波长处的加权平均的荧光发射。还提供了如上所述形成有多个复合增益元件的激光谐振腔。

16. 发明授权

US08283553B1 Photon enhanced thermoelectric power generation 失效
标题翻译：光子增强热电发电
公开(公告)号：US08283553B1
公开(公告)日：2012-10-09
申请号：US12235401
申请日：2008-09-22
申请人： Daniel Yap , David S. Sumida
发明人： Daniel Yap , David S. Sumida
IPC分类号： H01L35/30
CPC分类号： H01L35/30 , H02S10/10
摘要： A system and method for generating electrical power from a heat source utilizing both photonic and thermal conversion are disclosed. Specifically, power is generated by coupling photon converters to thermoelectric pairs in a way such that the thermoelectric pairs gain not only the charge carriers (holes and electrons) generated by the photons absorbed by the photon converters, but also the charge carriers generated by excess heat in the photon converters and an added thermal gradient generated by excess energy in the absorbed photons. Heat exchanger variations for such a system are also disclosed. Specifically, heat exchangers with and without photon emitters are disclosed and variants of refractive indices for heat exchanger systems are disclosed.
摘要翻译：公开了一种利用光子和热转换从热源产生电力的系统和方法。具体地说，通过将光子转换器耦合到热电对来产生功率，使得热电对不仅增加由光子转换器吸收的光子产生的电荷载流子（空穴和电子），而且增加由多余的热量产生的电荷载流子在光子转换器中和由吸收的光子中的过量能量产生的附加热梯度。还公开了这种系统的热交换器变型。特别地，公开了具有和不具有光子发射器的热交换器，并且公开了用于热交换器系统的折射率的变型。

17. 发明授权

US07995631B2 Solid-state laser with spatially-tailored active ion concentration using valence conversion with surface masking and method 有权
标题翻译：具有空间定制的活性离子浓度的固体激光器，其使用经表面掩蔽和方法的价态转换
公开(公告)号：US07995631B2
公开(公告)日：2011-08-09
申请号：US11404338
申请日：2006-04-14
申请人： David S. Sumida , Robert W. Byren , Michael Ushinsky
发明人： David S. Sumida , Robert W. Byren , Michael Ushinsky
IPC分类号： H01S3/16
CPC分类号： H01S3/0612 , H01S3/061 , H01S3/1618 , H01S3/1643
摘要： A material having a surface and a dopant in the material distributed whereby the material has a spatially variant optical flux density profile. In accordance with the invention, tailored non-uniform gain profiles within a Yb:YAG laser component (rod, slab, disc, etc.) are achieved by a spatial material modification in the spatially masked pre-forms. High temperature-assisted reduction leads to the coordinate-dependent gain profiles, which are controlled by the topology of the deposited solid masks. The gain profiles are obtained by reducing the charge state of the laser-active trivalent Yb3+ ions into inactive divalent Yb2+ ions. This valence conversion process is driven by mass transport of ions and oxygen vacancies. These processes, in turn, affect the dopant distribution throughout the surface and bulk laser crystal.
摘要翻译：在材料中具有表面和掺杂剂的材料被分配，由此材料具有空间上不同的光通量密度分布。根据本发明，Yb：YAG激光器部件（棒，板，盘等）中的定制的不均匀增益分布通过在空间掩蔽的预成型件中的空间材料修改来实现。高温辅助还原导致坐标依赖增益曲线，其由沉积的固体掩模的拓扑结构来控制。通过将激光活性三价Yb3 +离子的电荷状态降低成无活性的二价Yb2 +离子获得增益曲线。该价电子转化过程由离子和氧空位的质量传递驱动。这些过程又影响整个表面和体激光晶体的掺杂剂分布。

18. 发明授权

US07724800B2 Power scaleable thin disk lasers 有权
标题翻译：可扩展的光盘激光器
公开(公告)号：US07724800B2
公开(公告)日：2010-05-25
申请号：US11760470
申请日：2007-06-08
申请人： David S. Sumida , Hans W. Bruesselbach
发明人： David S. Sumida , Hans W. Bruesselbach
IPC分类号： H01S3/06
CPC分类号： H01S3/0604 , H01S3/025 , H01S3/0407 , H01S3/0602 , H01S3/0612 , H01S3/0615 , H01S3/0621 , H01S3/0623 , H01S2301/02
摘要： A thin disk laser includes a thin disk of a host material incorporating a laser gain medium. The disk has opposite first and second surfaces, at least one of which is non-planar. The first surface is coated with a high reflectivity coating. The second surface has an anti-reflection coating thereon. The shape and mounting of the laser is such that mismatch of the coefficients of thermal expansion between the disk laser and the mount does not affect scaling of the laser to larger size disks for higher power lasers.
摘要翻译：薄盘激光器包括结合有激光增益介质的主体材料的薄盘。盘具有相对的第一和第二表面，其中至少一个是非平面的。第一表面涂有高反射率涂层。第二表面上具有防反射涂层。激光器的形状和安装使得盘式激光器和安装座之间的热膨胀系数的不匹配不会影响激光对于较大功率激光器的较大尺寸的光盘的缩放。

19. 发明授权

US07215696B2 Electrically pumped semiconductor active mirror with improved performance and reduced parasitics 失效
标题翻译：电泵浦半导体主动镜具有改进的性能和减少的寄生效应
公开(公告)号：US07215696B2
公开(公告)日：2007-05-08
申请号：US10774001
申请日：2004-02-06
申请人： David M. Pepper , David S. Sumida
发明人： David M. Pepper , David S. Sumida
IPC分类号： H01S3/14 , H01S3/20
CPC分类号： H01S5/50 , H01S3/2308 , H01S3/2383 , H01S5/02423 , H01S5/0425 , H01S5/2063 , H01S2301/02
摘要： A system and a method for providing more gain while minimizing the potential for parasitic oscillation and amplified spontaneous emissions in an electrically pumped optical amplifier or laser system, utilizing a partitioned monolithic gain element. The monolithic gain element being partitioned into discontinuous amplifying gain regions such that parasitic modes and amplified spontaneous emissions are substantially obviated.
摘要翻译：一种利用分隔的单片增益元件在电泵浦的光放大器或激光系统中最小化寄生振荡和放大的自发辐射的可能性的同时提供更多增益的系统和方法。单片增益元件被划分为不连续的放大增益区域，使得寄生模式和放大的自发发射基本上被消除。

20. 发明授权

US06996137B2 Solid-state devices with radial dopant valence profile 有权
标题翻译：具有径向掺杂剂价态的固态器件
公开(公告)号：US06996137B2
公开(公告)日：2006-02-07
申请号：US10119462
申请日：2002-08-06
申请人： Robert W. Byren , David S. Sumida
发明人： Robert W. Byren , David S. Sumida
IPC分类号： H01S3/11 , H01S3/16
CPC分类号： H01S3/113 , H01S3/061 , H01S3/0617 , H01S3/094084 , H01S3/0941 , H01S3/1623 , H01S3/1643 , H01S3/1681
摘要： A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16). What is thereby produced is a solid state device (20, 30) in which the concentration of the dopant 16 at the second valence state (b) decreases with radius, the concentration of the dopant (16) at the first valence state (a) increases with radius, and the sum of these concentrations remains constant.
摘要翻译：固态激光控制装置（20,30）和材料（10）及其制造方法。装置（20,30）和材料（10）基本上由主体材料（14）组成，其包含：处于第一价态（a）的掺杂剂物质（16），其浓度随距离表面的距离而增加 18）; 和与第二价态（b）相同的掺杂剂物质（16），其浓度随距表面18的距离而减小。该方法包括以下步骤：获得掺杂固体材料（14）; 在氧化或还原气氛中将固态材料（14）暴露于升高的温度一段时间。选择升高的温度和曝光时间以与固态材料（16）的表面（18）的距离成正比的方式改变掺杂剂（16）的化合价态（a）。由此产生的是固态装置（20,30），其中第二价态（b）的掺杂剂16的浓度随着半径而减小，掺杂剂（16）处于第一价态（a）的浓度，半径增加，这些浓度的总和保持不变。

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