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    • 12. 发明申请
    • Sensor semiconductor device and manufacturing method thereof
    • 传感器半导体器件及其制造方法
    • US20080296716A1
    • 2008-12-04
    • US12151570
    • 2008-05-07
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu HsiaoChun-Chi Ke
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu HsiaoChun-Chi Ke
    • H01L21/50H01L23/00
    • H01L21/56H01L23/3114H01L27/14618H01L27/14683H01L2224/0554H01L2224/0557H01L2224/05571H01L2224/05573H01L2224/16H01L2924/00014H01L2924/01079H01L2924/15311H01L2224/05599H01L2224/0555H01L2224/0556
    • A sensor semiconductor device and a manufacturing method thereof are disclosed. The method includes: providing a light-permeable carrier board with a plurality of metallic circuits; electrically connecting the metallic circuits to a plurality of sensor chips through conductive bumps formed on the bond pads of the sensor chips, wherein the sensor chips have been previously subjected to thinning and chip probing; filling a first dielectric layer between the sensor chips to cover the metallic circuits and peripheries of the sensor chips; forming a second dielectric layer on the sensor chips and the first dielectric layer; forming grooves between the sensor chips for exposing the metallic circuits such that a plurality of conductive traces electrically connected to the metallic circuits can be formed on the second dielectric layer; and singulating the sensor chips to form a plurality of sensor semiconductor devices. The present invention overcomes the drawbacks of breakage of trace connection due to a sharp angle formed at joints, poor electrical connection and chip damage due to an alignment error in cutting from the back of the wafer, as well as an increased cost due to multiple sputtering processes for forming traces.
    • 公开了一种传感器半导体器件及其制造方法。 该方法包括:提供具有多个金属电路的透光性载板; 通过形成在传感器芯片的接合焊盘上的导电凸块将金属电路电连接到多个传感器芯片,其中传感器芯片已经预先经受了薄化和芯片探测; 在传感器芯片之间填充第一电介质层以覆盖金属电路和传感器芯片的周边; 在所述传感器芯片和所述第一介电层上形成第二电介质层; 在所述传感器芯片之间形成用于暴露所述金属电路的槽,使得可以在所述第二介电层上形成电连接到所述金属电路的多个导电迹线; 并且分离传感器芯片以形成多个传感器半导体器件。 本发明克服了由于在接头处形成的尖角导致的迹线连接断裂的缺点,由于从晶片背面的切割中的对准误差导致的不良电连接和芯片损坏以及由于多次溅射而导致的成本增加 形成痕迹的过程。
    • 13. 发明申请
    • Sensor-type semiconductor device and manufacturing method thereof
    • 传感器型半导体器件及其制造方法
    • US20080237767A1
    • 2008-10-02
    • US12080002
    • 2008-03-31
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu Hsiao
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu Hsiao
    • H01L31/0203H01L31/18
    • H01L27/14618B81C1/00888B81C2203/0118H01L23/3114H01L24/11H01L27/14683H01L2224/05001H01L2224/05008H01L2224/05024H01L2224/05026H01L2224/05124H01L2224/05147H01L2224/05155H01L2224/05166H01L2224/05184H01L2224/05548H01L2224/05569H01L2224/05644H01L2224/05655H01L2924/14H01L2924/00H01L2924/00014H01L2924/01074H01L2924/01023
    • A sensor-type semiconductor device and manufacturing method thereof are disclosed. The method includes providing a wafer comprising a plurality of sensor chips; forming concave grooves between the solder pads formed on the active surface of adjacent sensor chips; filling a filling material into the concave grooves and forming first conductive circuits electrically connecting the solder pads of adjacent sensor chips; mounting a light permeable body on the active surface of the wafer and thinning the non-active surface of the wafer to expose the filling material; mounting the wafer on a carrier board with second conductive circuits formed thereon corresponding in position to the filling material; forming first openings by cutting the light permeable body and the wafer to a position at which the second conductive circuits are located; forming metallic layers in the first openings by electroplating, the metallic layers electrically connecting the first and second conductive circuits of adjacent sensor chips; forming second openings by cutting the metallic layers to break the first conductive circuit connections and the second conductive circuit connections of adjacent sensor chips and meanwhile keep the first and second conductive circuits of each sensor chip still electrically connected through the metallic layers; filling a dielectric material into the second openings and removing the carrier board; and separating each of the sensor chips to form a plurality of sensor-type semiconductor devices. The invention overcomes the drawbacks of the prior art such as slanting notches formed on the non-active surface of the wafer, displacement of the notches due to the difficulty in precise alignment, as well as broken joints caused by concentrated stress generated in the slanting notches and exposed circuits.
    • 公开了一种传感器型半导体器件及其制造方法。 该方法包括提供包括多个传感器芯片的晶片; 在形成在相邻传感器芯片的有效表面上的焊盘之间形成凹槽; 将填充材料填充到凹槽中并形成电连接相邻传感器芯片的焊盘的第一导电电路; 将透光体安装在晶片的活性表面上并使晶片的非活性表面变薄以暴露填充材料; 将晶片安装在载体板上,其上形成有对应于位于填充材料的第二导电电路; 通过将透光体和晶片切割到第二导电电路所在的位置来形成第一开口; 通过电镀在第一开口中形成金属层,金属层电连接相邻传感器芯片的第一和第二导电电路; 通过切割金属层来形成第二开口,以破坏相邻传感器芯片的第一导电电路连接和第二导电电路连接,同时保持每个传感器芯片的第一和第二导电电路通过金属层电连接; 将电介质材料填充到第二开口中并移除载体板; 并分离每个传感器芯片以形成多个传感器型半导体器件。 本发明克服了现有技术的缺点,例如在晶片的非活性表面上形成的倾斜凹口,由于难以精确对准而导致的凹口位移以及由倾斜凹口产生的集中应力引起的断裂接头 和暴露电路。
    • 15. 发明授权
    • Sensor semiconductor device with sensor chip
    • 传感器半导体器件与传感器芯片
    • US07365364B2
    • 2008-04-29
    • US11162135
    • 2005-08-30
    • Chien-Ping HuangChih-Ming HuangCheng-Yi Chang
    • Chien-Ping HuangChih-Ming HuangCheng-Yi Chang
    • H01L29/267H01L29/22
    • H01L27/14683H01L27/14618H01L2224/24226
    • A sensor semiconductor device and a method for fabricating the same are proposed. A sensor chip is mounted on a substrate, and a dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the substrate and the sensor chip. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. The sensor chip can be electrically connected to an external device via a plurality of solder balls implanted on a surface of the substrate not for mounting the sensor chip. Therefore, the sensor semiconductor device is fabricated in a cost-effective manner, and circuit cracking and a know good die (KGD) problem are prevented.
    • 提出了一种传感器半导体器件及其制造方法。 传感器芯片安装在基板上,并且在基板上形成电介质层和电路层,其中电路层电连接到基板和传感器芯片。 电介质层形成有用于暴露传感器芯片的传感器区域的开口。 透光盖子覆盖电介质层的开口,使得光线能够穿透透光盖子到达传感器区域并激活传感器芯片。 传感器芯片可以通过植入在基板的表面上的多个焊球电连接到外部设备,而不用于安装传感器芯片。 因此,传感器半导体器件以成本有效的方式制造,并且防止了电路破裂和知道的裸芯片(KGD)问题。