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11. 发明申请

US20110304078A1 METHODS FOR REMOVING BYPRODUCTS FROM LOAD LOCK CHAMBERS 审中-公开
标题翻译：从负载锁定箱中移除副产品的方法
公开(公告)号：US20110304078A1
公开(公告)日：2011-12-15
申请号：US13014800
申请日：2011-01-27
申请人： JARED AHMAD LEE , BENJAMIN SCHWARZ , XIAOLIANG ZHUANG , EU JIN LIM , ADUATO DIAZ, JR. , SCOTT M. WILLIAMS , ANDREW NGUYEN , JAMES P. CRUSE
发明人： JARED AHMAD LEE , BENJAMIN SCHWARZ , XIAOLIANG ZHUANG , EU JIN LIM , ADUATO DIAZ, JR. , SCOTT M. WILLIAMS , ANDREW NGUYEN , JAMES P. CRUSE
IPC分类号： B29C71/00
CPC分类号： H01L21/67201
摘要： Methods for removing process byproducts from a load lock chamber are provided herein. In some embodiments, a method for removing process byproducts from a load lock chamber may include: performing a process on a substrate disposed within a process chamber; transferring the substrate from the process chamber to a load lock chamber; and providing an inert gas to the load lock chamber via at least one gas line while transferring the substrate from the process chamber to the load lock chamber to remove process byproducts from the load lock chamber.
摘要翻译：本文提供了从负载锁定室去除过程副产物的方法。在一些实施方案中，用于从负载锁定室除去过程副产物的方法可以包括：在设置在处理室内的衬底上进行处理; 将衬底从处理室转移到负载锁定室; 以及通过至少一条气体管线向所述负载锁定室提供惰性气体，同时将所述衬底从所述处理室转移到所述负载锁定室以从所述负载锁定室移除过程副产物。

12. 发明授权

US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
标题翻译：通过控制相对电极之间的RF相位，晶片上的等离子体工艺均匀性
公开(公告)号：US08076247B2
公开(公告)日：2011-12-13
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

13. 发明授权

US08075728B2 Gas flow equalizer plate suitable for use in a substrate process chamber 失效
标题翻译：气流平衡板，适用于衬底加工室
公开(公告)号：US08075728B2
公开(公告)日：2011-12-13
申请号：US12038887
申请日：2008-02-28
申请人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
发明人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
IPC分类号： C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译：提供流量均衡器板用于衬底处理室。流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

14. 发明授权

US08058156B2 Plasma immersion ion implantation reactor having multiple ion shower grids 有权
标题翻译：具有多个离子淋浴网格的等离子体浸没离子注入反应器
公开(公告)号：US08058156B2
公开(公告)日：2011-11-15
申请号：US10895784
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32357 , C23C14/046 , C23C14/48 , C23C16/045 , H01J37/32412
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, the plural orifices oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the closest one of the plural ion shower grids, and furnishing the selected species into the ion generation region. The process further includes evacuating the process region, and applying plasma source power to generate a plasma of the selected species in the ion generation region. The process also includes applying successive grid potentials to successive ones of the grids and applying a bias potential to the workpiece. The combination of the grid and bias potentials corresponds to the desired ion implantation depth profile in the workpiece.
摘要翻译：在具有一组多个并联离子淋浴网格的反应室中进行用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入方法，该多个平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴栅格具有从栅格到栅格相互配准的多个孔，多个孔相对于各个离子喷淋栅格的表面平行于非平行方向。该工艺包括将工件放置在工艺区域中，工件具有大致面对多个离子淋浴栅格中最接近的一个的表面的工件表面，并将所选择的物质提供到离子产生区域中。该方法还包括抽空处理区域，以及施加等离子体源功率以在离子产生区域中产生所选物种的等离子体。该过程还包括将连续的栅格电势施加到连续的栅格并向工件施加偏置电位。栅格和偏置电位的组合对应于工件中期望的离子注入深度分布。

15. 发明申请

US20110265887A1 APPARATUS FOR RADIAL DELIVERY OF GAS TO A CHAMBER AND METHODS OF USE THEREOF 失效
标题翻译：用于将气体径向输送到室的装置及其使用方法
公开(公告)号：US20110265887A1
公开(公告)日：2011-11-03
申请号：US12907947
申请日：2010-10-19
申请人： JARED AHMAD LEE , MARTIN JEFF SALINAS , ANKUR AGARWAL , EZRA ROBERT GOLD , JAMES P. CRUSE , ANIRUDDHA PAL , ANDREW NGUYEN
发明人： JARED AHMAD LEE , MARTIN JEFF SALINAS , ANKUR AGARWAL , EZRA ROBERT GOLD , JAMES P. CRUSE , ANIRUDDHA PAL , ANDREW NGUYEN
IPC分类号： F15D1/00
CPC分类号： H01L21/67017 , H01L21/67115 , H01L21/6719 , H01L21/67201 , H01L21/68785 , Y10T137/6416 , Y10T137/8593
摘要： Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.
摘要翻译：本文提供了将气体输送到室的装置及其使用方法。在一些实施例中，用于处理室的气体分配系统可以包括主体，其具有构造成将主体连接到处理室的内表面的第一表面，主体具有穿过主体设置的开口; 靠近所述开口的与所述主体的第一表面相对的第一端附近的凸缘，所述凸缘向内延伸到所述开口中并且构造成在其上支撑窗户; 以及多个气体分配通道，其设置在所述主体内并且将设置在所述主体内并且围绕所述开口的通道流体连接到设置在所述凸缘中的多个孔，其中所述多个孔围绕所述凸缘径向设置。

16. 发明申请

US20110265883A1 METHODS AND APPARATUS FOR REDUCING FLOW SPLITTING ERRORS USING ORIFICE RATIO CONDUCTANCE CONTROL 审中-公开
标题翻译：减少流量分解误差的方法和装置
公开(公告)号：US20110265883A1
公开(公告)日：2011-11-03
申请号：US12907942
申请日：2010-10-19
申请人： JAMES P. CRUSE , EZRA ROBERT GOLD , JARED AHMAD LEE , MING XU , CORIE LYNN COBB , ANDREW NGUYEN , JOHN W. LANE
发明人： JAMES P. CRUSE , EZRA ROBERT GOLD , JARED AHMAD LEE , MING XU , CORIE LYNN COBB , ANDREW NGUYEN , JOHN W. LANE
IPC分类号： F17D3/00 , F16K7/00
CPC分类号： H01J37/3244 , Y10T137/0357 , Y10T137/877
摘要： Methods and apparatus for gas delivery to a process chamber are provided herein. In some embodiments, an apparatus for processing substrates may include a mass flow controller to provide a desired total fluid flow; a first flow control manifold comprising a first inlet, a first outlet, and a first plurality of orifices selectably coupled therebetween, wherein the first inlet is coupled to the mass flow controller; and a second flow control manifold comprising a second inlet, a second outlet, and a second plurality of orifices selectably coupled therebetween, wherein the second inlet is coupled to the mass flow controller; wherein a desired flow ratio between the first outlet and the second outlet is selectably obtainable when causing the fluid to flow through one or more of the first plurality of orifices of the first manifold and one or more of the second plurality of orifices of the second manifold.
摘要翻译：本文提供了用于气体输送到处理室的方法和装置。在一些实施例中，用于处理衬底的装置可以包括质量流量控制器以提供期望的总流体流量; 第一流量控制歧管，包括第一入口，第一出口和可选择地联接在其间的第一多个孔，其中所述第一入口联接到所述质量流量控制器; 以及第二流量控制歧管，包括第二入口，第二出口和可选择地联接在其间的第二多个孔，其中所述第二入口联接到所述质量流量控制器; 其中当所述流体流过所述第一歧管的所述第一多个孔中的一个或多个并且所述第二歧管的所述第二多个孔中的一个或多个时，可选择地获得所述第一出口和所述第二出口之间的期望流量比。

17. 发明授权

US07987814B2 Lower liner with integrated flow equalizer and improved conductance 有权
标题翻译：下层衬套具有集成流量均衡器和改进的电导率
公开(公告)号：US07987814B2
公开(公告)日：2011-08-02
申请号：US12099007
申请日：2008-04-07
申请人： James D. Carducci , Andrew Nguyen , Ajit Balakrishna , Michael C. Kutney
发明人： James D. Carducci , Andrew Nguyen , Ajit Balakrishna , Michael C. Kutney
IPC分类号： C23C16/452 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/22 , C23C16/06
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译：等离子体处理室具有具有集成流量均衡器的下衬套。在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

18. 发明申请

US20110024047A1 SUBSTRATE SUPPORT HAVING FLUID CHANNEL 有权
标题翻译：基板支持流体通道
公开(公告)号：US20110024047A1
公开(公告)日：2011-02-03
申请号：US12849012
申请日：2010-08-02
申请人： Andrew NGUYEN , Wing Lau CHENG , Hiroji HANAWA , Semyon L. KATS , Kartik RAMASWAMY , Yan YE , Kwok Manus WONG , Daniel J. HOFFMAN , Tetsuya ISHIKAWA , Brian C. LUE
发明人： Andrew NGUYEN , Wing Lau CHENG , Hiroji HANAWA , Semyon L. KATS , Kartik RAMASWAMY , Yan YE , Kwok Manus WONG , Daniel J. HOFFMAN , Tetsuya ISHIKAWA , Brian C. LUE
IPC分类号： C23F1/08 , C23C16/00 , C23C16/458 , H01L21/683
CPC分类号： C23C14/564 , C23C16/4404 , H01J37/16 , H01J37/32504 , H01J37/32862 , H01J37/32871 , H01J2237/022 , H01L21/6875 , H01L21/68757 , Y10T428/24 , Y10T428/31678
摘要： A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.
摘要翻译：用于衬底处理室的支撑件包括具有衬底接收表面的卡盘，以及包括上壁的基座，该上壁包括凹槽，所述凹槽具有（i）第一深度处的附接面，以及（ii）第二深度处的流体通道。下壁位于凹槽中并附着到上壁的附接面，以封闭流体通道。提供流体入口以将传热流体供应到流体通道和设置用于从流体通道排出传热流体的流体出口。

19. 发明申请

US20100018648A1 WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING 审中-公开
标题翻译：用于等离子体反应器的工作支持，具有控制的RF功率分配到工艺套件环
公开(公告)号：US20100018648A1
公开(公告)日：2010-01-28
申请号：US12178032
申请日：2008-07-23
申请人： KENNETH S. COLLINS , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Hiroji Hanawa , Jennifer Y. Sun , Andrew Nguyen , Thorsten B. Lill , Meihua Shen
发明人： KENNETH S. COLLINS , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Hiroji Hanawa , Jennifer Y. Sun , Andrew Nguyen , Thorsten B. Lill , Meihua Shen
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32174 , H01J37/32623 , H01J2237/2001 , H01L21/6833
摘要： In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.
摘要翻译：在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度改变等离子体条件。

20. 发明申请

US20090257927A1 FOLDED COAXIAL RESONATORS 审中-公开
标题翻译：折叠同轴共振器
公开(公告)号：US20090257927A1
公开(公告)日：2009-10-15
申请号：US12371864
申请日：2009-02-16
申请人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , ANDREW NGUYEN , STEVEN LANE
发明人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , ANDREW NGUYEN , STEVEN LANE
IPC分类号： H01P1/20 , H01P7/04 , H05H1/24
CPC分类号： H01P7/04
摘要： A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator.
摘要翻译：一种用于构造分布式元件同轴谐振器的方法包括折叠同轴谐振器以提供与其电长度相比具有减小的物理长度的结构。在各种实施例中，当由特定波长的信号激发时，谐振器被调谐以影响驻波。同轴谐振器包括内部，中部和外部导体部分，其中在整个谐振器中保持特征阻抗。

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