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11. 发明授权

US08552458B2 Side by side light emitting diode (LED) having separate electrical and heat transfer paths 有权
标题翻译：具有独立的电和热传递路径的并排发光二极管（LED）
公开(公告)号：US08552458B2
公开(公告)日：2013-10-08
申请号：US12824163
申请日：2010-06-26
申请人： Trung Tri Doan , Chen-Fu Chu , Wen-Huang Liu , Feng-Hsu Fan , Hao-Chun Cheng , Fu-Hsien Wang
发明人： Trung Tri Doan , Chen-Fu Chu , Wen-Huang Liu , Feng-Hsu Fan , Hao-Chun Cheng , Fu-Hsien Wang
IPC分类号： H01L33/02
CPC分类号： H01L33/62 , H01L33/641 , H01L2224/73265 , H01L2933/0066
摘要： A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.
摘要翻译：发光二极管包括具有至少一个电隔离层的导热基板，该隔离层被配置为提供垂直电隔离和从基板的前侧（第一侧）到其后侧（第二侧）穿过基板的热传递路径。发光二极管包括具有贯通互连的阳极和在基板上并排布置的具有通孔互连的阴极。发光二极管还包括安装在阳极和阴极之间的衬底上的LED芯片。一种制造发光二极管的方法包括以下步骤：提供具有电隔离层的导热衬底，在衬底的第一侧经由衬底并排形成阳极通孔和阴极，形成阳极通过在阴极通孔中通过互连在阳极通孔和阴极之间的互连，通过互连将互连和阴极通过互连将衬底从衬底的第二侧延伸到阳极，并将LED芯片安装到与第一侧电连通的第一侧阴极通过互连和阳极通过互连。

12. 发明授权

US08492746B2 Light emitting diode (LED) dice having wavelength conversion layers 有权
标题翻译：具有波长转换层的发光二极管（LED）芯片
公开(公告)号：US08492746B2
公开(公告)日：2013-07-23
申请号：US13463874
申请日：2012-05-04
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/50 , H01L33/501 , H01L33/505 , H01L2933/0041
摘要： A light emitting diode (LED) die includes a wavelength conversion layer having a base material, and a plurality of particles embedded in the base material including wavelength conversion particles, and reflective particles. A method for fabricating light emitting diode (LED) dice includes the steps of mixing the wavelength conversion particles in the base material to a first weight percentage, mixing the reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die.
摘要翻译：发光二极管（LED）管芯包括具有基材的波长转换层和嵌入在包括波长转换颗粒的基材中的多个颗粒和反射颗粒。制造发光二极管（LED）模具的方法包括以下步骤：将基材中的波长转换颗粒混合到第一重量百分比，将基材中的反射颗粒混合至第二重量百分比，固化基材以形成具有选定厚度的波长转换层，并将波长转换层附接到管芯。

13. 外观设计

USD684940S1 LED chip 有权
公开(公告)号：USD684940S1
公开(公告)日：2013-06-25
申请号：US29419104
申请日：2012-04-25
申请人： Chen-Fu Chu , Chao-Chen Cheng , Hao-Chun Cheng
设计人： Chen-Fu Chu , Chao-Chen Cheng , Hao-Chun Cheng

14. 外观设计

USD684549S1 LED chip 有权
公开(公告)号：USD684549S1
公开(公告)日：2013-06-18
申请号：US29419107
申请日：2012-04-25
申请人： Chen-Fu Chu , Chao-Chen Cheng
设计人： Chen-Fu Chu , Chao-Chen Cheng

15. 发明申请

US20130069093A1 OPTOELECTRONIC DEVICE HAVING CONDUCTIVE SUBSTRATE 审中-公开
标题翻译：具有导电基板的光电器件
公开(公告)号：US20130069093A1
公开(公告)日：2013-03-21
申请号：US13596143
申请日：2012-08-28
申请人： WEN-HUANG LIU , YUNG WEI CHEN
发明人： WEN-HUANG LIU , YUNG WEI CHEN
IPC分类号： H01L33/62
CPC分类号： H01L33/486 , B33Y80/00 , H01L25/167 , H01L2224/48227 , H01L2933/0033 , H01L2224/48091 , H01L2924/00014
摘要： An optoelectronic device includes a conductive substrate; a polymer filled groove configured to separate the conductive substrate into a first semiconductor substrate and a second semiconductor substrate; a first front side electrode on the first semiconductor substrate and a second front side electrode on the second semiconductor substrate; and a light emitting diode (LED) chip on the first semiconductor substrate in electrical communication with the first front side electrode and with the second front side electrode.
摘要翻译：光电器件包括导电基片; 聚合物填充槽，被配置为将所述导电衬底分离成第一半导体衬底和第二半导体衬底; 第一半导体衬底上的第一前侧电极和第二半导体衬底上的第二前侧电极; 以及与所述第一前侧电极和所述第二前侧电极电连通的所述第一半导体衬底上的发光二极管（LED）芯片。

16. 发明申请

US20130062646A1 SYSTEM AND METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENTH CONVERSION LAYERS 有权
标题翻译：用水平转换层制造发光二极管（LED）的系统和方法
公开(公告)号：US20130062646A1
公开(公告)日：2013-03-14
申请号：US13473796
申请日：2012-05-17
申请人： JUI-KANG YEN , De-Shuo Chen
发明人： JUI-KANG YEN , De-Shuo Chen
IPC分类号： H01L33/44 , H01L33/50
CPC分类号： H01L33/505 , H01L21/6838 , H01L2933/0041
摘要： A system for fabricating light emitting diode (LED) dice includes a wavelength conversion layer contained on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The system also includes a curing apparatus configured to reduce the adhesiveness of the adhesive layer to facilitate removal of the wavelength conversion layer from the substrate, and an attachment apparatus configured to remove the wavelength conversion layer from the substrate and to attach the wavelength conversion layer to a light emitting diode (LED) die. A method for fabricating light emitting diode (LED) dice includes the steps of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.
摘要翻译：一种用于制造发光二极管（LED）裸片的系统包括：在粘合剂层上的基底上包含的波长转换层，其构造为在暴露于物理能量（例如电磁辐射或热）时具有降低的粘附性。该系统还包括：固化装置，其被配置为降低粘合剂层的粘附性，以便于从基板除去波长转换层;以及附接装置，其被配置为从基板去除波长转换层并将波长转换层附着到发光二极管（LED）裸片。制造发光二极管（LED）模具的方法包括以下步骤：将衬底上的粘合剂层暴露于物理能量，以降低粘合剂层的粘合性，从衬底去除波长转换层，以及将波长转换层到发光二极管（LED）模具。

17. 发明申请

US20130001510A1 OPTOELECTRONIC DEVICE HAVING CURRENT BLOCKING INSULATION LAYER FOR UNIFORM TEMPERATURE DISTRIBUTION AND METHOD OF FABRICATION 审中-公开
标题翻译：具有用于均匀温度分布的电流阻塞绝缘层的光电装置和制造方法
公开(公告)号：US20130001510A1
公开(公告)日：2013-01-03
申请号：US13535794
申请日：2012-06-28
申请人： CHEN-FU CHU , FENG-HSU FAN
发明人： CHEN-FU CHU , FENG-HSU FAN
IPC分类号： H01L33/14 , H01L33/06
CPC分类号： H01L33/405 , H01L33/007 , H01L33/145
摘要： An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer,
摘要翻译：光电子器件包括导电基底，导电基底上的反射导电层，导电层上的第一半导体层，被配置为第一限制层，第一半导体层上的有源层，被配置为发射电磁辐射;第二半导体层在被配置为第二限制层的有源层上，第二半导体层上的电极和反射导电层上的电流阻挡结构包括与被配置为阻挡来自电极的电流的电极对准的薄透明绝缘层，以消散在第一半导体层和反射导电层之间的界面处产生的热，并且传输从反射导电层反射的电磁辐射，

18. 发明授权

US08324082B1 Method for fabricating conductive substrates for electronic and optoelectronic devices 有权
标题翻译：制造电子和光电器件导电基板的方法
公开(公告)号：US08324082B1
公开(公告)日：2012-12-04
申请号：US13233070
申请日：2011-09-15
申请人： Wen-Huang Liu , Yung-Wei Chen
发明人： Wen-Huang Liu , Yung-Wei Chen
IPC分类号： H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01L33/486 , B33Y80/00 , H01L25/167 , H01L2224/48227 , H01L2933/0033 , H01L2224/48091 , H01L2924/00014
摘要： A method for fabricating a conductive substrate for an electronic device includes the steps of providing a semiconductor substrate; forming a plurality of grooves part way through the semiconductor substrate; filling the grooves with a polymer insulating material to form a plurality of polymer filled grooves; thinning the substrate from the back side to expose the polymer filled grooves; and singulating the semiconductor substrate into a plurality of conductive substrates. An optoelectronic device includes a conductive substrate; a polymer filled groove configured to separate the conductive substrate into a first semiconductor substrate and a second semiconductor substrate; a first front side electrode on the first semiconductor substrate and a second front side electrode on the second semiconductor substrate; and a light emitting diode (LED) chip on the first semiconductor substrate in electrical communication with the first front side electrode and with the second front side electrode.
摘要翻译：一种电子器件用导电性基板的制造方法，其特征在于，具备：半导体基板; 在半导体衬底上形成多个槽; 用聚合物绝缘材料填充凹槽以形成多个聚合物填充凹槽; 从背面使基材变薄，露出聚合物填充的凹槽; 以及将所述半导体衬底分离成多个导电衬底。光电器件包括导电基片; 聚合物填充槽，被配置为将所述导电衬底分离成第一半导体衬底和第二半导体衬底; 第一半导体衬底上的第一前侧电极和第二半导体衬底上的第二前侧电极; 以及与所述第一前侧电极和所述第二前侧电极电连通的所述第一半导体衬底上的发光二极管（LED）芯片。

19. 发明申请

US20120168714A1 VERTICAL LIGHT EMITTING DIODE (VLED) DIE AND METHOD OF FABRICATION 审中-公开
标题翻译：垂直发光二极管（VLED）DIE和制造方法
公开(公告)号：US20120168714A1
公开(公告)日：2012-07-05
申请号：US12983436
申请日：2011-01-03
申请人： Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
发明人： Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
IPC分类号： H01L33/04
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/647 , H01L2224/73265 , H01L2933/0016
摘要： A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
摘要翻译：垂直发光二极管（VLED）模具包括具有第一表面和相对的第二表面的第一金属; 在所述第一金属的第二表面上的第二金属; 在第一金属的第一表面上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。

20. 发明申请

US20120032217A1 WHITE LED DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：白光LED装置及其制造方法
公开(公告)号：US20120032217A1
公开(公告)日：2012-02-09
申请号：US13118337
申请日：2011-05-27
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/50
CPC分类号： H01L33/507 , H01L33/44 , H01L33/505 , H01L33/58 , H01L2933/0058
摘要： The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.
摘要翻译：本发明提供了一种白色发光二极管器件，其包括：导电衬底; 形成在所述导电基板上的多层发光半导体外延结构; 提供在多层发光半导体外延结构上的接触; 设置在所述多层发光半导体外延结构上的透明层; 设置在透明层上的波长转换层; 以及设置在波长转换层上的光学层。本发明还提供一种制造白色发光二极管器件的方法。

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