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11. 发明授权

US07646145B2 Organic EL light emitting device 有权
标题翻译：有机EL发光装置
公开(公告)号：US07646145B2
公开(公告)日：2010-01-12
申请号：US10515449
申请日：2003-05-21
申请人： Takeshi Suzuki
发明人： Takeshi Suzuki
IPC分类号： H01J63/04
CPC分类号： H01L51/5218 , H01L27/322 , H01L27/3272 , H01L51/5234 , H01L51/5271 , H01L2251/5315 , H01L2251/5353
摘要： An organic EL light-emitting device includes a substrate, thin films having a reflecting function formed on the substrate, an organic EL light-emitting layer, and upper electrodes. The thin films having a reflecting function are formed from an amorphous alloy, whereby there can be provided an organic EL light-emitting device having reflective films that have all of a reflecting function, a function of shielding transistors from light, and an electrode function, and moreover have little surface unevenness.
摘要翻译：有机EL发光装置包括基板，具有形成在基板上的反射功能的薄膜，有机EL发光层和上电极。具有反射功能的薄膜由非晶态合金形成，由此可以提供具有反射膜功能的全反射膜，屏蔽晶体管的功能以及电极功能的有机EL发光装置，并且还具有很小的表面不均匀性。

12. 发明申请

US20090243471A1 ORGANIC ELECTROLUMINESCENT DEVICE 审中-公开
标题翻译：有机电致发光器件
公开(公告)号：US20090243471A1
公开(公告)日：2009-10-01
申请号：US12365162
申请日：2009-02-03
申请人： Yukinori KAWAMURA , Yutaka TERAO , Makoto KOBAYASHI , Naoyuki KANAI , Ryohei MAKINO
发明人： Yukinori KAWAMURA , Yutaka TERAO , Makoto KOBAYASHI , Naoyuki KANAI , Ryohei MAKINO
IPC分类号： H01J1/63
CPC分类号： H01L51/5036
摘要： An organic EL device is disclosed in which the amount of dopant added is easily controlled, and which is able to achieve stable light emission that does not depend on the current density of electrical current passing through the device. The organic electroluminescent device includes a first electrode, an organic electroluminescent layer having a hole injecting and transporting layer, an organic emissive layer and an electron injecting and transporting layer, and a second electrode. The organic emissive layer has an inner layer interposed between two outer layers. The outer layers contact the hole injecting and transporting layer and the electron injecting and transporting layer, respectively. The two outer layers are composed of a host material and a first fluorescent dopant, and the inner layer is composed of a host material, a first fluorescent dopant and a second fluorescent dopant. The first fluorescent dopant has a larger bandgap than the second fluorescent dopant.
摘要翻译：公开了一种有机EL器件，其中添加的掺杂剂的量容易控制，并且其能够实现不依赖于通过器件的电流的电流密度的稳定的发光。有机电致发光器件包括第一电极，具有空穴注入和传输层的有机电致发光层，有机发光层和电子注入传输层以及第二电极。有机发光层具有介于两个外层之间的内层。外层分别与空穴注入传输层和电子注入传输层接触。两个外层由主体材料和第一荧光掺杂剂组成，内层由主体材料，第一荧光掺杂剂和第二荧光掺杂剂组成。第一荧光掺杂剂具有比第二荧光掺杂剂更大的带隙。

13. 发明授权

US07595966B2 Multi-valued data recording spin injection magnetization reversal element and device using the element 失效
标题翻译：多值数据记录自旋注入磁化反转元件和使用元件的装置
公开(公告)号：US07595966B2
公开(公告)日：2009-09-29
申请号：US11530931
申请日：2006-09-12
申请人： Hideaki Watanabe , Akira Saito
发明人： Hideaki Watanabe , Akira Saito
IPC分类号： G11B5/39
CPC分类号： G11C11/16 , G11C11/5607
摘要： A spin injection magnetization reversal device is disclosed which inhibits an increase in resistance to enable multi-valued data recording. A ferromagnetic fixed layer and n groups each including a ferromagnetic free layer and an isolation layer are disclosed. The groups are disposed from the group including the first ferromagnetic free layer provided on the ferromagnetic fixed layer to the group including the n-th ferromagnetic free layer in the order. Each of the ferromagnetic free layers is preferably formed of one of a CoCrPt alloy, a CoCr alloy and a CoPt alloy with Pt or Cu concentration therein made monotonically decreased from the concentration in the first ferromagnetic free layer to that in the n-th ferromagnetic free layer.
摘要翻译：公开了一种自动注入磁化反转装置，其抑制了允许多值数据记录的电阻增加。公开了铁磁性固定层和各自包含铁磁性自由层和隔离层的n组。这些组从包括在铁磁性固定层上的第一铁磁性自由层的组排列到包括第n铁磁性自由层的组中。每个铁磁自由层优选由CoCrPt合金，CoCr合金和其中Pt或Cu浓度的CoPt合金中的一种形成，其中从第一铁磁性自由层中的浓度到第n铁磁性自由层中的浓度单调减小层。

14. 发明授权

US07557152B2 Reactive flame retardant and flame-retardant resin processed article 失效
标题翻译：反应性阻燃和阻燃树脂加工制品
公开(公告)号：US07557152B2
公开(公告)日：2009-07-07
申请号：US11816665
申请日：2006-02-16
申请人： Toshiyuki Kanno , Yoshinobu Sugata , Hironori Yanase , Kiyotaka Shigehara
发明人： Toshiyuki Kanno , Yoshinobu Sugata , Hironori Yanase , Kiyotaka Shigehara
IPC分类号： C08K5/53 , C08K5/161
CPC分类号： C07F9/2462 , C07F9/242 , C07F9/2429 , C07F9/5325 , C08K5/523 , C08K5/5399 , C09K21/12
摘要： Disclosed is a reactive flame retardant which provides a resin with excellent flame retardance even when it is added in a small amount while being prevented from bleedout. Also disclosed is a flame-retardant resin processed article obtained by using such a reactive flame retardant. An organophosphorus compound represented by the general formula (I) below, wherein at least one or more of X1-X3 represent a group containing phosphorus and having a terminal unsaturated group, is used as a reactive flame retardant which is reactive with resins. A flame-retardant resin processed article can be obtained by solidifying the resin composition containing the organophosphorus compound and then reacting it through heating or application of radiation.
摘要翻译：公开了一种反应性阻燃剂，其即使在防止渗出时少量加入时也提供具有优异阻燃性的树脂。还公开了通过使用这种反应性阻燃剂获得的阻燃树脂加工制品。作为与树脂反应的反应性阻燃剂，使用下述通式（I）表示的有机磷化合物，其中X 1 -X 3表示含磷基团，具有末端不饱和基团的基团。通过使包含有机磷化合物的树脂组合物固化，然后通过加热或施加辐射使其反应，可以获得阻燃树脂加工制品。

15. 发明授权

US07532504B2 Spin injection magnetic domain wall displacement device and element thereof 失效
标题翻译：自旋注入磁畴壁位移装置及其元件
公开(公告)号：US07532504B2
公开(公告)日：2009-05-12
申请号：US11379474
申请日：2006-04-20
申请人： Akira Saito
发明人： Akira Saito
IPC分类号： G11C11/14 , G11C11/15 , H01L43/02
CPC分类号： G11C11/16 , G11C19/0808 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1193
摘要： A spin injection magnetic domain wall displacement device has a plurality of spin injection magnetic domain wall displacement elements. Each element includes a magnetic domain wall displacement layer having a magnetic domain wall, and a first, second, and third magnetic layer groups each having a ferromagnetic layer. The first, second, and third magnetic layer groups are disposed in the order on the same side of the magnetic domain wall displacement layer. The magnetic domain wall is displaceable by flowing electrons between the first and third magnetic layer groups. The position of the magnetic domain wall in the magnetic domain wall displacement layer is detectable based on the difference in the electrical resistance across the second and first or third magnetic layer groups. The magnetic domain wall displacement layer is in antiferromagnetic coupling with the first magnetic layer group, and in antiferromagnetic or ferromagnetic coupling with the third magnetic layer group. The element enables detection of displacement of the magnetic domain wall by measuring the change in the electric resistance.
摘要翻译：自旋注入磁畴壁位移装置具有多个自旋注入磁畴壁位移元件。每个元件包括具有磁畴壁的磁畴壁位移层和每个具有铁磁层的第一，第二和第三磁性层组。第一，第二和第三磁性层组按照磁畴壁位移层的同一侧依次设置。磁畴壁可以通过在第一和第三磁性层组之间流动电子来移动。基于跨第二和第一或第三磁性层组的电阻的差异，可以检测磁畴壁位移层中的磁畴壁的位置。磁畴壁位移层与第一磁层组反铁磁耦合，与第三磁层组反铁磁或铁磁耦合。该元件可以通过测量电阻的变化来检测磁畴壁的位移。

16. 发明授权

US07532502B2 Spin injection magnetic domain wall displacement device and element thereof 失效
标题翻译：自旋注入磁畴壁位移装置及其元件
公开(公告)号：US07532502B2
公开(公告)日：2009-05-12
申请号：US11278613
申请日：2006-04-04
申请人： Akira Saito
发明人： Akira Saito
IPC分类号： G11C11/14 , G11C11/15 , H01L43/02
CPC分类号： G11C11/16 , G01R33/093 , G11C19/0808
摘要： A spin injection magnetic domain wall displacement wall displacement device has a plurality of spin injection magnetic domain wall displacement elements. Each element includes a magnetic domain wall displacement layer having a magnetic domain wall, a first magnetic layer group having at least one ferromagnetic layer, and a second magnetic layer group having at least one ferromagnetic layer. The first magnetic layer group is disposed at one end or side of the magnetic domain wall displacement layer and the second magnetic layer group disposed at the other end or side thereof. The magnetic domain wall in the magnetic domain wall displacement layer is displaced by flowing electrons between the first magnetic layer group and the second magnetic layer group. Part of the magnetic domain wall displacement layer can be in antiferromagnetic coupling with the first magnetic layer group, and the other part of the magnetic domain wall displacement layer can be in antiferromagnetic or ferromagnetic coupling with the second magnetic layer group. The element enables detection of the displacement of the magnetic domain wall by measuring the change in the electric resistance. Moreover, the magnetic domain wall displacement at a high speed with a low level current and thermal stability of the recorded magnetic domain wall can be made compatible.
摘要翻译：自旋注入磁畴壁位移壁位移装置具有多个自旋注入磁畴壁位移元件。每个元件包括具有磁畴壁的磁畴壁位移层，具有至少一个铁磁层的第一磁性层组和具有至少一个铁磁层的第二磁性层组。第一磁性层组被设置在位于其另一端或侧面的磁畴壁位移层和第二磁性层组的一端或侧面。通过在第一磁性层组和第二磁性层组之间流动电子，使磁畴壁位移层中的磁畴壁发生位移。磁畴壁位移层的一部分可以与第一磁层组反铁磁耦合，磁畴壁位移层的另一部分可以与第二磁层组反铁磁或铁磁耦合。该元件可以通过测量电阻的变化来检测磁畴壁的位移。此外，具有低电平电流的高速磁畴壁位移和记录的磁畴壁的热稳定性可以被兼容。

17. 发明申请

US20090050932A1 SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090050932A1
公开(公告)日：2009-02-26
申请号：US11817683
申请日：2006-02-28
申请人： Hong-fei Lu , Shinichi Jimbo
发明人： Hong-fei Lu , Shinichi Jimbo
IPC分类号： H01L29/739 , H01L21/332
CPC分类号： H01L29/7802 , H01L21/84 , H01L27/1203 , H01L29/0623 , H01L29/0653 , H01L29/0878 , H01L29/42368 , H01L29/456 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： To provide a semiconductor device that exhibits a high breakdown voltage, excellent thermal properties, a high latch-up withstanding capability and low on-resistance. The semiconductor device according to the invention, which includes a buried insulator region 5 disposed between an n−-type drift layer 3 and a first n-type region 7 above n−-type drift layer 3, facilitates limiting the emitter hole current, preventing latch-up from occurring, raising neither on-resistance nor on-voltage. The semiconductor device according to the invention, which includes a p-type region 4 disposed between the buried insulator region 5 and n−-type drift layer 3, facilitates depleting n−-type drift layer 3 in the OFF-state of the device. The semiconductor device according to the invention, which includes a second n-type region 6 disposed between the first n-type region 7 and the n−-type drift layer 3, facilitates dissipating the heat caused in the channel region or in the first n-type region 7 to a p+-type collector layer 1a, which is a semiconductor substrate, via the second n-type region 6, n−-type drift layer 3 and an n-type buffer layer 2.
摘要翻译：提供具有高击穿电压，优异的热性能，高闩锁耐受能力和低导通电阻的半导体器件。根据本发明的半导体器件，其包括设置在n型漂移层3和n型漂移层3上方的第一n型区域7之间的掩埋绝缘体区域5，有助于限制发射极空穴电流，防止产生闩锁，不会产生导通电阻或导通电压。根据本发明的半导体器件，其包括设置在掩埋绝缘体区域5和n型漂移层3之间的p型区域4，有助于在器件的截止状态下耗尽n型漂移层3。根据本发明的半导体器件，其包括设置在第一n型区域7和n型漂移层3之间的第二n型区域6，有助于散发在沟道区域或第一n型区域中产生的热量通过第二n型区域6，n型漂移层3和n型缓冲层2，作为半导体衬底的p +型集电极层1a至n +型集电极层1a。

18. 发明申请

US20090048377A1 FLAME-RETARDANT RESIN PROCESSED ARTICLE 有权
标题翻译：阻燃树脂加工品
公开(公告)号：US20090048377A1
公开(公告)日：2009-02-19
申请号：US11915391
申请日：2006-05-10
申请人： Toshiyuki Kanno , Yoshinobu Sugata , Hironori Yanase , Kiyotaka Shigehara
发明人： Toshiyuki Kanno , Yoshinobu Sugata , Hironori Yanase , Kiyotaka Shigehara
IPC分类号： C07F9/6574
CPC分类号： C08K5/49 , C08K5/0066 , C08K5/5313 , C09K21/12
摘要： Disclosed is a flame-retardant resin processed article having excellent flame retardance while being free from bleed-out. Specifically, a resin composition containing a cyclic phosphorus compound flame retardant, a hydrophilic silica powder having an average particle diameter of not more than 15 m, and a resin with the total content of the cyclic phosphorus compound and the hydrophilic silica powder being 10-45% by mass is molded into a certain shape or formed into a coating film. The hydrophilic silica powder is preferably composed of porous structures having a pore volume of not more than 1.8 ml/g and a pH of 4-7. More preferably, the hydrophilic silica powder has an oil absorption of not less than 50 ml/100 g in accordance with JIS K5101.
摘要翻译：公开了一种阻燃树脂加工制品，其具有优异的阻燃性，同时不会渗出。具体地说，将含有环状磷化合物阻燃剂，平均粒径为15μm以下的亲水性二氧化硅粉末和环状磷化合物和亲水性二氧化硅粉末的总含量为10〜45的树脂组合物质量％成型为一定形状或形成涂膜。亲水性二氧化硅粉末优选由孔体积不大于1.8ml / g，pH为4-7的多孔结构体构成。更优选地，亲水性二氧化硅粉末根据JIS K5101具有不小于50ml / 100g的吸油量。

19. 发明申请

US20090039342A1 Thin film field-effect transistor and process for producing the same 有权
标题翻译：薄膜场效应晶体管及其制造方法
公开(公告)号：US20090039342A1
公开(公告)日：2009-02-12
申请号：US11991379
申请日：2006-08-24
申请人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
发明人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0052 , H01L51/0055 , H01L51/0074 , H01L51/0094 , H01L51/105
摘要： Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length. Such a thin film field-effect transistor and a process for producing the same are provided that contains a substrate 10, a gate electrode 11, a gate insulating film 12 that is provided on the gate electrode, a source electrode 15 and a drain electrode 14 that are provided on the gate insulating film with a prescribed distance, and an organic electronic material layer 13 containing an organic electronic material that is provided on the gate insulating film and is in electrical contact with the source electrode and the drain electrode, with an acid, an acid derivative and/or a reaction product of an acid and the organic electronic material being present at least a part of an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer.
摘要翻译：提供这样的薄膜晶体管及其制造方法，其能够防止FET特性由于短的沟道长度而劣化。提供这样的薄膜场效应晶体管及其制造方法，其包含基板10，栅极电极11，设置在栅电极上的栅极绝缘膜12，源极15和漏极14 设置在规定距离的栅极绝缘膜上的有机电子材料层13和含有设置在栅极绝缘膜上并与源电极和漏电极电接触的有机电子材料的有机电子材料层13与酸，酸和有机电子材料的酸衍生物和/或反应产物存在于源电极和有机电子材料层之间的界面的至少一部分以及漏电极和有机电子材料层之间的界面。

20. 发明授权

US07477015B2 Sealing glass substrate for organic EL material and method of manufacturing organic EL display 有权
标题翻译：用于有机EL材料的密封玻璃基板和制造有机EL显示器的方法
公开(公告)号：US07477015B2
公开(公告)日：2009-01-13
申请号：US11258369
申请日：2005-10-26
申请人： Hideyo Nakamura
发明人： Hideyo Nakamura
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/524 , H01L51/56
摘要： A sealing glass substrate that allows control of adhesion width and ready cutting of the glass substrate without extending the cutting position in a process of manufacturing organic EL displays by sealing and cutting an organic EL substrate containing one or more organic EL (electroluminescent) display parts. The sealing glass substrate seals an organic EL substrate that includes one or more organic EL laminates. The sealing glass substrate is formed of a glass plate and includes one or more recesses each opposing one of the organic EL laminates. An adhesion region surrounds each recess, and an adhesion escape groove surrounds each adhesion region. The recesses and adhesion escape grooves are of substantially equal depth.
摘要翻译：一种密封玻璃基板，其通过密封和切割含有一个或多个有机EL（电致发光）显示部件的有机EL基板的制造有机EL显示器的过程，而不延伸切割位置，从而可以控制玻璃基板的粘附宽度和准备切割。密封玻璃基板密封包括一个或多个有机EL层压板的有机EL基板。密封玻璃基板由玻璃板形成，并且包括一个或多个相对于有机EL层叠体之一的凹部。粘附区域围绕每个凹部，并且附着逃逸槽围绕每个粘附区域。凹槽和附着逃逸槽的深度基本相同。

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