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1. 发明申请

US20070131927A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070131927A1
公开(公告)日：2007-06-14
申请号：US11537959
申请日：2006-10-02
申请人： Haruo KAWAKAMI , Hisato KATO , Takahiko MAEDA , Nobuyuki SEKINE
发明人： Haruo KAWAKAMI , Hisato KATO , Takahiko MAEDA , Nobuyuki SEKINE
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L27/3274 , H01L51/0021 , H01L51/0541 , H01L2251/105
摘要： An OTFT is formed by forming a pair of recesses, one being a groove and another being groove or a hole. A source electrode is formed by filling one of the recesses. A drain electrode is formed by filling the other one of the recesses. A film of organic semiconductor material is formed on the source electrode and the drain electrode and makes electrical contact therewith. A gate insulating film is formed on the film of organic material, and a gate electrode is formed on the gate insulating film. The method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode and the drain electrode formed on the substrate such as a plastic substrate by an inexpensive process.
摘要翻译：通过形成一对凹部形成OTFT，一个凹槽，另一个是凹槽，另一个是凹槽或孔。通过填充一个凹部来形成源电极。通过填充另一个凹部来形成漏电极。在源电极和漏电极上形成有机半导体材料膜，并与其电接触。在有机材料的膜上形成栅极绝缘膜，在栅极绝缘膜上形成栅电极。制造OTFT的方法允许通过廉价的方法实现形成在诸如塑料基板的基板上的源电极和漏电极的高精度微细加工。

2. 发明授权

US09385333B2 Process for producing thin film field-effect transistor 有权
标题翻译：薄膜场效应晶体管的制造方法
公开(公告)号：US09385333B2
公开(公告)日：2016-07-05
申请号：US11991379
申请日：2006-08-24
申请人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
发明人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L51/0545 , H01L51/0052 , H01L51/0055 , H01L51/0074 , H01L51/0094 , H01L51/105
摘要： A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.
摘要翻译：制造薄膜场效应晶体管的工艺包括提供栅电极，栅极绝缘膜以及源极和漏极，用硫酸和过氧化氢的混合物处理源极和漏极的整个表面，并提供在栅极绝缘膜上含有有机电子材料的有机电子材料层与源极和漏极电接触。含有有机电子材料的磺化产物的有机电子材料，硫酸和过氧化氢的反应产物仅存在于源电极和有机电子材料层之间的界面处，并且在漏电极和有机电子之间的界面从而增加有机电子材料的导电性，并减少从源电极到有机电子材料的电荷注入阻挡层。

3. 发明申请

US20090039342A1 Thin film field-effect transistor and process for producing the same 有权
标题翻译：薄膜场效应晶体管及其制造方法
公开(公告)号：US20090039342A1
公开(公告)日：2009-02-12
申请号：US11991379
申请日：2006-08-24
申请人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
发明人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0052 , H01L51/0055 , H01L51/0074 , H01L51/0094 , H01L51/105
摘要： Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length. Such a thin film field-effect transistor and a process for producing the same are provided that contains a substrate 10, a gate electrode 11, a gate insulating film 12 that is provided on the gate electrode, a source electrode 15 and a drain electrode 14 that are provided on the gate insulating film with a prescribed distance, and an organic electronic material layer 13 containing an organic electronic material that is provided on the gate insulating film and is in electrical contact with the source electrode and the drain electrode, with an acid, an acid derivative and/or a reaction product of an acid and the organic electronic material being present at least a part of an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer.
摘要翻译：提供这样的薄膜晶体管及其制造方法，其能够防止FET特性由于短的沟道长度而劣化。提供这样的薄膜场效应晶体管及其制造方法，其包含基板10，栅极电极11，设置在栅电极上的栅极绝缘膜12，源极15和漏极14 设置在规定距离的栅极绝缘膜上的有机电子材料层13和含有设置在栅极绝缘膜上并与源电极和漏电极电接触的有机电子材料的有机电子材料层13与酸，酸和有机电子材料的酸衍生物和/或反应产物存在于源电极和有机电子材料层之间的界面的至少一部分以及漏电极和有机电子材料层之间的界面。

4. 发明申请

US20060202196A1 Transistor 审中-公开
标题翻译：晶体管
公开(公告)号：US20060202196A1
公开(公告)日：2006-09-14
申请号：US11336429
申请日：2006-01-20
申请人： Haruo Kawakami , Hisato Kato , Takahiko Maeda , Nobuyuki Sekine
发明人： Haruo Kawakami , Hisato Kato , Takahiko Maeda , Nobuyuki Sekine
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L21/31683 , H01L51/001 , H01L51/0051 , H01L51/0052 , H01L51/0562 , H01L51/0583
摘要： A thin film field effect transistor is disclosed that includes a gate electrode, a gate insulator film the on gate electrode, and a first organic electronic material film containing a first organic electronic material on the gate insulator film. A source electrode and a drain electrode are spaced apart from each other on the first organic electronic material film. The first organic electronic material film includes a portion between the source electrode and the drain electrode that is in contact with the gate insulator film. This portion provides a current path. The current is controlled by the potential of the gate electrode. There is a second organic electronic material film that is in contact with the surface of first organic electronic material film opposite to the portion that provides the current path. The second organic electronic material film contains a second organic electronic material and an electron acceptor or an electron donor. The thin film field effect transistor facilitates accumulating electric charges in the channel on the gate insulator film and realizing a high response frequency.
摘要翻译：公开了一种薄膜场效应晶体管，其包括栅极电极，栅极电极上的栅极绝缘膜，以及在栅极绝缘膜上含有第一有机电子材料的第一有机电子材料膜。源电极和漏电极在第一有机电子材料膜上彼此间隔开。第一有机电子材料膜包括与栅绝缘膜接触的源电极和漏电极之间的部分。该部分提供当前路径。电流由栅电极的电位控制。存在与第一有机电子材料膜的与提供电流路径的部分相对的表面接触的第二有机电子材料膜。第二有机电子材料膜含有第二有机电子材料和电子受体或电子给体。薄膜场效应晶体管有助于在栅极绝缘膜上的沟道中积累电荷并实现高响应频率。

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