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171. 发明申请

US20140046568A1 TORQUE DISTRIBUTION APPARATUS, TORQUE DISTRIBUTION METHOD, TORQUE DISTRIBUTION VALUE GENERATION METHOD, AND PROGRAM 有权
标题翻译：扭矩分配装置，扭矩分配方法，扭矩分配值生成方法和程序
公开(公告)号：US20140046568A1
公开(公告)日：2014-02-13
申请号：US14113140
申请日：2011-04-21
申请人： Masahiro Kato , Eiji Muramatsu , Kazutoshi Kitano , Chihiro Kawabata , Kazunobu Hashimoto , Yoshikazu Takeuchi
发明人： Masahiro Kato , Eiji Muramatsu , Kazutoshi Kitano , Chihiro Kawabata , Kazunobu Hashimoto , Yoshikazu Takeuchi
IPC分类号： B60K28/16
CPC分类号： B60K28/16 , B60K7/0007 , B60K17/356 , B60K2007/0038 , B60K2007/0092 , B60L3/104 , B60L3/108 , B60L7/14 , B60L9/18 , B60L11/126 , B60L15/20 , B60L15/2009 , B60L15/2036 , B60L2220/44 , B60L2240/12 , B60L2240/16 , B60L2240/20 , B60L2240/421 , B60L2240/423 , B60L2240/461 , B60L2240/465 , B60L2240/622 , B60L2250/26 , B60L2260/28 , B60L2260/30 , B60W10/00 , B60W10/08 , B60W30/18127 , B60W30/18172 , B60W2520/10 , B60W2520/26 , B60W2720/30 , Y02T10/6217 , Y02T10/642 , Y02T10/645 , Y02T10/646 , Y02T10/7077 , Y02T10/7275 , Y02T10/7291 , Y02T90/16 , Y02T90/162
摘要： A torque distribution apparatus includes an instructed torque acquiring unit that acquires input instructed torque, a determining unit that determines whether to perform power running control or regenerative braking, an efficiency map acquiring unit that based on a determination result, acquires a motor efficiency map, a vehicular speed detecting unit, a drive wheel rotational speed detecting, a slip rate calculating unit that calculates slip rate at drive wheels, a calculating unit that based on the slip rate, creates an efficiency variation expression that indicates efficiency values on a performance curve that indicates relations between drive wheel rotational speed and torque, a distributing unit that calculates based on the slip rate, the instructed torque, and the torque optimizing efficiency, torque distribution values such that overall efficiency during power running and during regeneration are maximized, and a control unit that controls torque distribution to the motors.
摘要翻译：扭矩分配装置包括获取输入指示扭矩的指示扭矩获取单元，确定是否进行动力运行控制或再生制动的判定单元，基于判定结果的效率图获取单元取得马达效率图，车速检测单元，驱动轮转速检测，计算驱动轮的滑移率的滑移率计算单元，基于滑移率的运算单元，生成表示效果变化表达式，该效果变化表达式表示表示驱动轮转速与转矩之间的关系，基于滑移率，指示转矩和转矩优化效率计算的分配单元，使得动力运行和再生期间的总效率最大化的转矩分配值，以及控制单元它控制到电机的转矩分配。

172. 发明授权

US08628686B2 Process for production of fluorescent substance 有权
标题翻译：荧光物质生产工艺
公开(公告)号：US08628686B2
公开(公告)日：2014-01-14
申请号：US13036410
申请日：2011-02-28
申请人： Naotoshi Matsuda , Yumi Fukuda , Masahiro Kato
发明人： Naotoshi Matsuda , Yumi Fukuda , Masahiro Kato
IPC分类号： C09K11/08 , C09K11/66
CPC分类号： C09K11/7728 , C01B21/0821 , C01B21/0826 , C01P2002/52 , C01P2002/72 , C01P2002/84 , C09K11/7734
摘要： The embodiment provides a process for production of an oxynitride fluorescent substance. In the process, a compound represented by the formula: (Sr,Eu)2Si5N8, silicon nitride and aluminum nitride are mixed and then fired in a nitrogen atmosphere under high pressure.
摘要翻译：本实施例提供了制造氮氧化物荧光物质的方法。在此过程中，将由式（Sr，Eu）2 Si 5 N 8，氮化硅和氮化铝表示的化合物混合，然后在氮气气氛中高压烧制。

173. 发明授权

US08558251B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08558251B2
公开(公告)日：2013-10-15
申请号：US13214444
申请日：2011-08-22
申请人： Iwao Mitsuishi , Yumi Fukuda , Aoi Okada , Ryosuke Hiramatsu , Naotoshi Matsuda , Shinya Nunoue , Keiko Albessard , Masahiro Kato
发明人： Iwao Mitsuishi , Yumi Fukuda , Aoi Okada , Ryosuke Hiramatsu , Naotoshi Matsuda , Shinya Nunoue , Keiko Albessard , Masahiro Kato
IPC分类号： H01L29/88 , F21V9/00
CPC分类号： H01L25/0753 , C09K11/0883 , C09K11/7734 , F21Y2105/10 , F21Y2105/12 , F21Y2113/10 , F21Y2115/10 , H01L33/502 , H01L33/64 , H01L2224/45144 , H01L2224/48091 , H01L2924/00
摘要： A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.
摘要翻译：根据一个实施例的发光器件包括板; 多个第一发光元件安装在板上以发射波长为250nm至500nm的光; 多个第二发光元件安装在板上以发射波长为250nm至500nm的光; 形成在每个第一发光元件上的第一荧光层，所述第一荧光层包括第一荧光体; 以及形成在每个第二发光元件上的第二荧光层，所述第二荧光层包括第二荧光体。在50℃下，第二荧光体的发光效率高于第一荧光体，并且在150℃的发光效率下比第一荧光体低。

174. 发明申请

US20130234591A1 WHITE LIGHT EMITTING DEVICE 审中-公开
标题翻译：白光发光装置
公开(公告)号：US20130234591A1
公开(公告)日：2013-09-12
申请号：US13677675
申请日：2012-11-15
申请人： Yasushi Hattori , Naotoshi Matsuda , Kunio Ishida , Aoi Okada , Ryosuke Hiramatsu , Masahiro Kato , Iwao Mitsuishi
发明人： Yasushi Hattori , Naotoshi Matsuda , Kunio Ishida , Aoi Okada , Ryosuke Hiramatsu , Masahiro Kato , Iwao Mitsuishi
IPC分类号： H05B33/12 , H05B33/04
CPC分类号： H05B33/12 , H01L33/504 , H01L33/505 , H01L33/507 , H01L2224/48091 , H05B33/04 , H01L2924/00014
摘要： A white light emitting device of an embodiment includes: a light emitting element having a peak wavelength in a wavelength range from 430 to 470 nm both inclusive, a first fluorescent material formed over the light emitting element, and emitting light having a first peak wavelength of 530 to 580 nm both inclusive and having a first half width, and a second fluorescent material formed over the light emitting element, and emitting light having a second peak wavelength that is longer than the first peak wavelength and ranges from 570 to 620 nm both inclusive, and having a second half width that is 100 nm or less and is equal to or narrower than the first half width.
摘要翻译：实施方式的白色发光装置包括：发光元件，具有波长范围为430〜470nm的波长的发光元件，形成在发光元件上方的第一荧光体，发光元件的第一峰值波长 530〜580nm，具有第一半宽度，以及形成在发光元件上的第二荧光材料，并且发射具有比第一峰值波长长的第二峰值波长的光，并且其范围为570-620nm，包括并且具有100nm或更小的第二半宽度并且等于或小于第一半宽度。

175. 发明申请

US20130234584A1 WHITE LIGHT EMITTING DEVICE 有权
标题翻译：白光发光装置
公开(公告)号：US20130234584A1
公开(公告)日：2013-09-12
申请号：US13597808
申请日：2012-08-29
申请人： Yasushi HATTORI , Aoi Okada , Ryosuke Hiramatsu , Kunio Ishida , Masahiro Kato
发明人： Yasushi HATTORI , Aoi Okada , Ryosuke Hiramatsu , Kunio Ishida , Masahiro Kato
IPC分类号： H05B33/12
CPC分类号： H05B33/12 , C09K11/7734 , H01L33/504 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
摘要： A white light emitting device according to an embodiment includes: a light emitting element having a peak wavelength in a wavelength range of 430 nm or more and 470 nm or less; a first fluorescent material emits light with a first peak wavelength of 525 nm or more and 560 nm or less; a second fluorescent material emits light with a second peak wavelength longer than the first peak wavelength; and a third fluorescent material emits light with a third peak wavelength of 620 nm or more and 750 nm or less, which is longer than the second peak wavelength. The first fluorescent material and the second fluorescent material has a composition of MSiαOβNγ, and when the first peak wavelength is denoted by λ1 (nm), whereas the second peak wavelength is denoted by λ2 (nm), 1100≦λ1+λ2 and λ2−λ1≦60 are satisfied.
摘要翻译：根据实施例的白色发光器件包括：具有波长范围在430nm以上且470nm以下的峰值波长的发光元件; 第一荧光体发射具有525nm以上且560nm以下的第一峰值波长的光; 第二荧光材料发射具有比第一峰值波长长的第二峰值波长的光; 并且第三荧光材料发射比第二峰值波长长的具有620nm以上且750nm以下的第三峰值波长的光。第一荧光材料和第二荧光材料具有MSialphaObetaNgamma的组成，并且当第一峰值波长由λ1（nm）表示时，而第二峰值波长由λ2（nm）表示，1100≤λ1+λ2和λ2- lambda1 @ 60满足。

176. 发明授权

US08471585B2 Method for evaluating semiconductor device 有权
标题翻译：半导体器件评估方法
公开(公告)号：US08471585B2
公开(公告)日：2013-06-25
申请号：US12805273
申请日：2010-07-21
申请人： Mitsuyoshi Miyazono , Shigekazu Komatsu , Dai Shinozaki , Masahiro Kato , Atsushi Yoshida
发明人： Mitsuyoshi Miyazono , Shigekazu Komatsu , Dai Shinozaki , Masahiro Kato , Atsushi Yoshida
IPC分类号： G01R31/26
CPC分类号： H01L22/20 , G01R31/2831 , H01L22/14
摘要： A yield and productivity of a semiconductor module are improved. A sheet having electrical conductivity is fixed to a main surface of a semiconductor substrate on which a plurality of semiconductor devices having a surface structure and a rear surface electrode are arranged. The semiconductor substrate is divided into semiconductor chips on a first support stage in the state where the sheet is fixed to its main surface. The plurality of divided semiconductor chips are mounted on a second support stage via the sheet and further, the plurality of mounted semiconductor chips are continuously subjected to a dynamic characteristic test on the second support stage. The proposed semiconductor device evaluation method permits a fissure growing and propagating from a crack occurring in the dynamic characteristic test of the vertical semiconductor devices to be suppressed, and the yield and productivity of the semiconductor module to be improved.
摘要翻译：提高半导体模块的产量和生产率。具有导电性的片材固定在其上布置有多个具有表面结构的半导体器件和背面电极的半导体衬底的主表面上。半导体衬底在片材固定到其主表面的状态下在第一支撑台上分成半导体芯片。多个划分的半导体芯片通过片材安装在第二支撑台上，并且多个安装的半导体芯片在第二支撑台上连续进行动态特性测试。所提出的半导体器件评估方法允许抑制在垂直半导体器件的动态特性测试中发生的裂纹的裂缝生长和传播，并且提高半导体模块的产量和生产率。

177. 发明授权

US08471277B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08471277B2
公开(公告)日：2013-06-25
申请号：US13214377
申请日：2011-08-22
申请人： Iwao Mitsuishi , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka , Keiko Albessard , Masahiro Kato
发明人： Iwao Mitsuishi , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka , Keiko Albessard , Masahiro Kato
IPC分类号： H01L29/20 , H01L33/00 , H01J1/62
CPC分类号： H01L33/504 , C09K11/0883 , C09K11/7734 , H01L33/505 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.
摘要翻译：根据一个实施例的发光器件包括发射波长为380nm至470nm的光的发光元件; 设置在发光元件上的CASN第一红色荧光体; 设置在发光元件上的赛隆第二红色磷光体; 以及设置在发光元件上的赛隆绿荧光体。

178. 发明申请

US20130025838A1 HEADER TANK FOR HEAT EXCHANGER 有权
标题翻译： HEADER坦克热交换器
公开(公告)号：US20130025838A1
公开(公告)日：2013-01-31
申请号：US13640617
申请日：2011-04-15
申请人： Masahiro Kato , Takashi Kaneda
发明人： Masahiro Kato , Takashi Kaneda
IPC分类号： F28F9/02
CPC分类号： F28D1/05366 , F02B29/0456 , F28D2021/0082 , F28F9/0224 , F28F9/0268 , F28F2009/029 , F28F2009/0292 , Y02T10/146
摘要： A header tank for a heat exchanger for supplying a heat exchange fluid to a core unit in which a plurality of tubes are provided side by side includes an inlet part for introducing the heat exchange fluid into the header tank, and a plurality of ribs projecting into the header tank, extending in directions intersecting with a central axis direction of the inlet part, arranged side by side in the central axis direction and configured to cause the heat exchange fluid to flow into the tubes. The plurality of ribs project more into the header tank with increasing distance from the inlet part.
摘要翻译：用于将热交换流体供给到其中多个管并排设置的芯部的热交换器的集管箱包括用于将热交换流体引入集水箱的入口部分和突出到所述集水箱在与所述入口部的中心轴方向相交的方向上延伸，并且配置成使得所述热交换流体流入所述管。多个肋条随着与入口部分的距离增加而更多地进入集水箱。

179. 发明申请

US20120326268A1 SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, BONDED SOI WAFER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：硅外延晶片，其制造方法，结合SOI晶片及其制造方法
公开(公告)号：US20120326268A1
公开(公告)日：2012-12-27
申请号：US13582614
申请日：2011-03-01
申请人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L29/06 , H01L21/20 , H01L21/762 , H01L29/02
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/76254 , H01L29/78603
摘要： A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle Φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle Φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×1019/cm3. Even when an epitaxial layer having a dopant concentration of 1×1019/cm3 or more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.
摘要翻译：一种硅外延片，其具有在硅单晶衬底的主表面上通过气相外延生长的硅外延层，其中所述硅单晶衬底的主表面相对于[100]轴以角度倾斜; 在（100）面的[011]方向或[0-1-1]方向上，在（100）面的[01-1]方向或[0-11]方向上的角度Φ处，角度和角度角度Φ小于10分钟，硅外延层的掺杂剂浓度为1×1019 / cm3以上。即使在硅单晶衬底的主表面上形成掺杂浓度为1×1019 / cm3以上的外延层，也抑制了外延层上的条状表面凹凸。

180. 发明申请

US20120135584A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20120135584A1
公开(公告)日：2012-05-31
申请号：US13389273
申请日：2010-09-01
申请人： Isao Yokokawa , Masahiro Kato , Masayuki Imai
发明人： Isao Yokokawa , Masahiro Kato , Masayuki Imai
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506 , H01L29/78603
摘要： A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment.
摘要翻译： SOI晶片的制造方法包括在含有氩气的气氛下对SOI晶片进行平坦化热处理，其中SOI晶片制备条件被设定为使SOI晶片的SOI层的厚度为平坦化热处理比BOX层厚1.4倍以上，通过对SOI层的SOI层进行牺牲氧化处理，SOI层的厚度减小到小于BOX层厚度的1.4倍经过平坦化热处理后的SOI晶片。

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