专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08956951B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08956951B2
公开(公告)日：2015-02-17
申请号：US13389273
申请日：2010-09-01
申请人： Isao Yokokawa , Masahiro Kato , Masayuki Imai
发明人： Isao Yokokawa , Masahiro Kato , Masayuki Imai
IPC分类号： H01L21/00 , H01L21/20 , H01L21/30 , H01L21/46 , H01L21/762 , H01L21/265 , H01L29/786
CPC分类号： H01L21/76254 , H01L21/26506 , H01L29/78603
摘要： A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment.
摘要翻译： SOI晶片的制造方法包括在含有氩气的气氛下对SOI晶片进行平坦化热处理，其中SOI晶片制备条件被设定为使SOI晶片的SOI层的厚度为平坦化热处理比BOX层厚1.4倍以上，通过对SOI层的SOI层进行牺牲氧化处理，SOI层的厚度减小到小于BOX层厚度的1.4倍经过平坦化热处理后的SOI晶片。

2. 发明申请

US20120135584A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20120135584A1
公开(公告)日：2012-05-31
申请号：US13389273
申请日：2010-09-01
申请人： Isao Yokokawa , Masahiro Kato , Masayuki Imai
发明人： Isao Yokokawa , Masahiro Kato , Masayuki Imai
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506 , H01L29/78603
摘要： A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment.
摘要翻译： SOI晶片的制造方法包括在含有氩气的气氛下对SOI晶片进行平坦化热处理，其中SOI晶片制备条件被设定为使SOI晶片的SOI层的厚度为平坦化热处理比BOX层厚1.4倍以上，通过对SOI层的SOI层进行牺牲氧化处理，SOI层的厚度减小到小于BOX层厚度的1.4倍经过平坦化热处理后的SOI晶片。

3. 发明申请

US20080128851A1 Method Of Manufacturing Soi Wafer And Thus-Manufactured Soi Wafer 有权
标题翻译：制造硅晶片和如此制造的硅晶片的方法
公开(公告)号：US20080128851A1
公开(公告)日：2008-06-05
申请号：US11662285
申请日：2005-09-09
申请人： Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
发明人： Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
IPC分类号： H01L29/00 , H01L21/30
CPC分类号： H01L21/76254 , H01L21/3226
摘要： A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1λ
摘要翻译：一种制造SOI晶片的方法包括接合步骤，薄化和接合退火步骤。假设SiO 2的折射率n 1为1.5，Si的折射率n 2为3.5，氧化硅膜2和SOI层15的光学厚度t OP 在红外波长区域中，作为t OP = N 1×t 1 + n 2×t 2，氧化硅膜2的厚度t 1和SOI层的厚度t 2满足关系并且使得（t 1×n 1）/（t 2×n 2）落在0.2-3范围内。通过在键合退火之前进行的核激光退火在接合退火之后将基底晶片中的氧沉淀形成密度调节到小于1×10 9 / cm 3以上。该结构成功地提供了制造具有薄氧化硅膜和SOI层的SOI晶片的方法，并且不太可能引起翘曲。

4. 发明授权

US06933249B2 Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06933249B2
公开(公告)日：2005-08-23
申请号：US10479043
申请日：2002-05-31
申请人： Shin Yokoyama , Anri Nakajima , Yoshihide Tada , Genji Nakamura , Masayuki Imai , Tsukasa Yonekawa
发明人： Shin Yokoyama , Anri Nakajima , Yoshihide Tada , Genji Nakamura , Masayuki Imai , Tsukasa Yonekawa
IPC分类号： C23C16/30 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/56 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/321 , H01L21/8242 , H01L27/108 , H01L29/78 , H01L21/31
CPC分类号： H01L21/3185 , B82Y10/00 , B82Y30/00 , C23C16/30 , C23C16/345 , C23C16/45546 , C23C16/56 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/31662 , H01L21/3211 , Y10S438/909
摘要： A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.
摘要翻译：提供了可以提高氮化硅膜或氮化物膜的表面的均匀性的半导体器件的制造方法，并且提高生产效率。在硅衬底上形成作为氧化硅膜或氮氧化硅膜的第一膜的步骤，形成作为四氯硅烷单分子层的第二膜的工序，以及形成作为氮化硅的第三膜的工序包括在第二膜上进行氮化处理的单分子层。通过重复形成第二膜的步骤和形成第三膜的步骤预定次数来形成具有预定膜厚度的氮化硅膜。在制造装置中，在台阶状的舟舟上配置多个硅基板，从处理气体供给管朝向反应管的上侧供给处理气体。

5. 发明授权

US06386445B2 Medium issuing apparatus using paper roll medium and automatic teller machine using the apparatus 失效
标题翻译：使用纸卷介质的发行装置和使用该装置的自动柜员机
公开(公告)号：US06386445B2
公开(公告)日：2002-05-14
申请号：US09774079
申请日：2001-01-31
申请人： Masayuki Imai , Kazuto Kitano , Mitsushige Nakao
发明人： Masayuki Imai , Kazuto Kitano , Mitsushige Nakao
IPC分类号： G06F1760
CPC分类号： G07F19/20 , B65H29/14 , B65H31/02 , B65H31/3027 , B65H31/36 , B65H2403/942 , B65H2408/13 , G07F19/201 , G07G5/00
摘要： A medium issuing apparatus using at least a paper roll medium and an automatic teller machine including the apparatus are disclosed, in which the operation of changing the width of the paper rolls for issuing a medium, the maximum diameter of the paper rolls, the printing surface and the tandem arrangement or juxtaposition of the paper rolls is performed with a single apparatus. The medium issuing apparatus is so configured that the paper rolls are held on a replaceable holding frame, the roll paper from the desired paper roll is transported and printed in a common printing mechanism. The printed roll paper is cut off and a predetermined number of cut pieces are stored and bundled in a temporary storage section. The roll paper cut off and bundled are transported to a common ejection opening by a transport mechanism, and ejected from the same common ejection opening by another transport mechanism. The outer diameter, width and winding direction of the paper rolls can be changed by the holding frame.
摘要翻译：公开了至少使用纸卷介质的媒体发行装置和包括该装置的自动柜员机，其中改变用于发行介质的纸卷的宽度，纸卷的最大直径，打印表面并且纸卷的串联排列或并置是用单个装置进行的。介质发行装置被构造成使得纸卷被保持在可更换的保持框架上，来自期望纸卷的卷纸被传送并打印在通用打印机构中。打印的卷纸被切断，预定数量的切割片被存储并捆扎在临时存储部分中。被切断并捆扎的卷纸通过传送机构传送到共同的喷射口，并由另一传送机构从相同的公共喷射口排出。纸卷的外径，宽度和卷绕方向可以通过保持框架来改变。

6. 发明授权

US06145737A Automatic teller apparatus 失效
标题翻译：自动柜员机
公开(公告)号：US06145737A
公开(公告)日：2000-11-14
申请号：US185713
申请日：1998-11-04
申请人： Masayuki Imai , Kenichi Nashirozawa , Kazuto Kitano , Naomi Hori
发明人： Masayuki Imai , Kenichi Nashirozawa , Kazuto Kitano , Naomi Hori
IPC分类号： G07D11/00 , G07F19/00 , B65D91/00
CPC分类号： G07F19/20 , G07D11/0006 , G07D11/0096 , G07F19/202
摘要： A check is fed to a storage mechanism through a check carrier path. The storage mechanism carries the check to a check carrier unit by an operation of a gate mechanism. The check carrier unit carries the check as far as a storage box with carrier rollers. The check is discharged from the check carrier unit and stored in the storage box. The storage box is provided outside a safe. The storage box is detachably provided and has a cylinder lock provided on the door thereof.
摘要翻译：通过检查载体路径将检查馈送到存储机构。存储机构通过门机构的操作将支票运送到支票托运单元。检查承运人单元携带支票到具有承载辊的存储箱。支票从支票运输单元中排出并存储在存储箱中。储物箱在保险箱外面提供。存储盒可拆卸地设置，并且在其门上设置有气缸锁。

7. 发明授权

US5816775A Drainage pump with interposed disk 失效
标题翻译：排水泵带插盘
公开(公告)号：US5816775A
公开(公告)日：1998-10-06
申请号：US786298
申请日：1997-01-22
申请人： Masayuki Imai , Takashi Endo , Tatsushi Ninomiya
发明人： Masayuki Imai , Takashi Endo , Tatsushi Ninomiya
IPC分类号： F04D29/22 , F04D29/66 , F04D17/14
CPC分类号： F04D29/2277 , F04D29/669
摘要： A pump body 10 of a drainage pump 1A comprises a pump chamber 12, inlet 15, and outlet 17. A rotary vane 300 mounted in the pump body 10 is coupled to a motor mounted above the pump body 10, and comprises a shaft 310 and four large-radial blades 320. Formed below the large-radial blades 320 are small-radial blades 350 to make a liquid at the inlet rise. Lower edges of the large-radial blades 320 are connected together by a disk 350 having an opening at the center and interceptively dividing the surface of the liquid rising from the inlet. Thus the amount of the liquid in contact with the large-radial blades 320 above the disk 350 decreases, and the load to the rotary vane decreases. At the same time, bubbles, noise and vibrations caused by bubbles also decrease. By surrounding the outer circumference of the large-radial blades 320 with a ring member, return water W5 moving back from the outlet 17 when the pump stops is damped by the wall member 360 and returns smoothly to the inlet 15.
摘要翻译：排水泵1A的泵体10包括泵室12，入口15和出口17.安装在泵体10中的旋转叶片300联接到安装在泵体10上方的电动机，并且包括轴310和四个大径向叶片320.在大径向叶片320的下方形成有小径向叶片350，以使入口处的液体升高。大径叶片320的下边缘通过具有在中心处具有开口的盘350连接在一起，并且截断地分离从入口上升的液体的表面。因此，与盘350上方的大径向叶片320接触的液体的量减少，并且对旋转叶片的负载减小。同时，由气泡引起的气泡，噪音和振动也减少。通过用环形构件围绕大径叶片320的外圆周，当泵停止时从出口17向后移动的返回水W5被壁构件360阻尼并平稳地返回到入口15。

8. 发明授权

US08057417B2 Lower back supporter 有权
标题翻译：下背支持者
公开(公告)号：US08057417B2
公开(公告)日：2011-11-15
申请号：US12381202
申请日：2009-03-09
申请人： Masayuki Imai
发明人： Masayuki Imai
IPC分类号： A61F5/00 , A61F5/28
CPC分类号： A61F5/028
摘要： A lower back supporter including a pair of flat anchor parts that come into contact with the lower back of a wearer with a specified space in between, a pair of anchor belts that wrap around the abdomen with the end portions connected to each other, a first and second support belt that cross over each other on the back, and a connecting belt that connects the anchor parts. The inner side surface of the anchor part comprising a non-slip material that closely contacts the skin of the wearer, and the outer side surface comprising a material that fastens to surface fasteners. After the anchor belts are put on, operation belts connected to the first and second support belts are pulled, the surface fasteners are fastened to the outer side surfaces of the anchor parts, applying tensile force between the anchor parts in closely contact to the lower back.
摘要翻译：一种下背支撑件，包括一对与穿着者的下背接触的一对平的锚定部分，其间具有指定的间隔;一对锚固带，其围绕腹部缠绕有彼此连接的端部;第一和在背面彼此交叉的第二支撑带，以及连接锚定部分的连接带。锚定部分的内侧表面包括紧密接触穿戴者皮肤的防滑材料，外侧表面包括紧固到表面紧固件的材料。在安装锚固带之后，拉动连接到第一和第二支撑带的操作带，将表面紧固件紧固到锚定部件的外侧表面上，在锚固部件之间施加紧张力与下背部紧密接触。

9. 发明申请

US20050063451A1 Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device 审中-公开
标题翻译：温度测量系统，使用它的加热装置和半导体晶片的制造方法，热射线绝缘半透明部件，可见光反射膜，曝光系统用反射镜和曝光系统，以及使用它们制造的半导体器件和兽医热处理装置
公开(公告)号：US20050063451A1
公开(公告)日：2005-03-24
申请号：US10504223
申请日：2003-02-24
申请人： Takao Abe , Masayuki Imai
发明人： Takao Abe , Masayuki Imai
IPC分类号： E06B7/08 , E06B9/386 , G01J5/00 , G01J5/08 , G02B7/18 , H01L21/00
CPC分类号： G01J5/08 , E06B9/386 , E06B2009/2464 , G01J5/0003 , G01J5/0007 , G01J5/0809 , G01J5/0821 , G01J5/0846 , G02B7/181 , G02B7/1815 , H01L21/67115 , H01L21/67248
摘要： Oppositely of a temperature measuring surface of an object-to-be-measured 16, a reflecting member 28 is disposed while being spaced by a reflection gap 35 from the temperature measuring surface. The reflecting member 28 is composed of a heat ray reflecting material capable of reflecting heat ray in a specific wavelength band, in a portion including a reflection surface 35a. A heat ray extraction pathway section 30 is disposed through the reflecting member 28 so that one end thereof faces the temperature measuring surface. Heat ray extracted through the heat ray extraction pathway section from the reflection gap is detected by a temperature detection section 34. The heat ray reflecting material is configured in a form of a stack comprising a plurality of element reflecting layers composed of a material having transparent properties to the heat ray, in which every adjacent two element reflecting layers are composed of a combination of materials having refractive indices which differ from each other by 1.1 or more. This makes the measurement be hardly affected by radiation ratio of the object-to-be-measured when temperature of the object-to-be-measured is measured by a radiation thermometer, enables to measure its temperature more correctly irrespective of the surface state thereof, and can simplify configuration of a measurement system.
摘要翻译：与要被测量物体16的温度测量表面相反，反射构件28被布置成与来自温度测量表面的反射间隙35隔开。反射构件28由能够反射特定波长带的热射线的热射线反射材料构成，包括反射面35a的部分。热射线提取路径部分30穿过反射部件28设置成使得其一端面向温度测量表面。通过温度检测部分34检测从反射间隙通过热射线提取通路部分提取的热射线。热射线反射材料被构造成堆叠的形式，包括由具有透明特性的材料构成的多个元件反射层其中每个相邻的两个元件反射层由折射率彼此不同的折射率为1.1以上的材料的组合构成。这使得当通过辐射温度计测量待测对象的温度时，测量对象的辐射比几乎不受影响，能够更准确地测量其温度，而与其表面状态无关，并且可以简化测量系统的配置。

10. 发明授权

US06821566B2 Method and apparatus for forming insulating film containing silicon oxy-nitride 有权
标题翻译：用于形成含有氮氧化硅的绝缘膜的方法和装置
公开(公告)号：US06821566B2
公开(公告)日：2004-11-23
申请号：US10299707
申请日：2002-11-20
申请人： Genji Nakamura , Yoshihide Tada , Masayuki Imai , Asami Suemura , Shingo Hishiya
发明人： Genji Nakamura , Yoshihide Tada , Masayuki Imai , Asami Suemura , Shingo Hishiya
IPC分类号： C23C1406
CPC分类号： C23C16/4408 , C23C16/308 , C23C16/56
摘要： A method of forming an insulating film containing silicon oxy-nitride includes a loading step, temperature raising step, oxidation step, cycle purge step, and annealing step, in this order. The temperature raising step is performed while supplying nitrogen gas and oxygen gas for preventing a silicon layer surface from being nitrided, at a supply ratio 100:1 to 1000:1. The oxidation step is performed at a temperature of 700 to 950° C. while supplying a gas that contains 1 to 5 vol % of water vapor and 95 to 99 vol % of nitrogen gas, to form a silicon oxide film. The annealing step is performed at a temperature of 800 to 950° C. while supplying a gas that contains 10 to 100 vol % of nitrogen monoxide gas, to convert a portion of the silicon oxide film into silicon oxy-nitride.
摘要翻译：形成含有氮氧化硅的绝缘膜的方法包括依次加载步骤，升温步骤，氧化步骤，循环净化步骤和退火步骤。在供给比为100:1〜1000:1的同时，供给用于防止硅层表面被氮化的氮气和氧气的升温步骤。氧化步骤在700〜950℃的温度下进行，同时供给含有1〜5体积％的水蒸气和95〜99体积％的氮气的气体，形成氧化硅膜。退火步骤在800至950℃的温度下进行，同时供应含有10至100vol％的一氧化氮气体的气体，以将氧化硅膜的一部分转化为氮氧化硅。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式