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151. 发明授权

US07078735B2 Light-emitting device and illuminator 有权
公开(公告)号：US07078735B2
公开(公告)日：2006-07-18
申请号：US10807161
申请日：2004-03-24
申请人： Masayuki Shono , Masayuki Hata
发明人： Masayuki Shono , Masayuki Hata
IPC分类号： H01L29/22
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/58 , H01L2933/0091
摘要： A light-emitting device, having high light extraction efficiency, capable of obtaining diffused light is obtained. This light-emitting device comprises a light-emitting diode, a portion, formed on a plane substantially parallel to a light-emitting surface of the light-emitting diode, having a dielectric constant periodically modulated with respect to the in-plane direction of the plane substantially parallel to the light-emitting surface and a member provided on the side of the light-emitting surface of the light-emitting diode for diffusing light emitted from the light-emitting diode.

152. 发明授权

US06998649B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US06998649B2
公开(公告)日：2006-02-14
申请号：US10951816
申请日：2004-09-29
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L29/22
CPC分类号： H01L33/387 , B82Y20/00 , G02B6/1225 , G02B6/1226 , H01L33/405 , H01L2933/0083 , H01S5/0425 , H01S5/1046 , H01S5/18319 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device capable of attaining a surface plasmon effect while attaining excellent ohmic contact is provided. This semiconductor light-emitting device comprises a semiconductor layer formed on an emission layer, a first electrode layer formed on the semiconductor layer and a second electrode layer, formed on the first electrode layer, having a periodic structure. The first electrode layer is superior to the second electrode layer in ohmic contact with respect to the semiconductor layer, and the second electrode layer contains a metal exhibiting a higher plasma frequency than the first electrode layer.
摘要翻译：提供能够获得表面等离子体激元效应同时获得优异的欧姆接触的半导体发光器件。该半导体发光器件包括形成在发光层上的半导体层，形成在半导体层上的第一电极层和形成在第一电极层上的具有周期性结构的第二电极层。第一电极层相对于半导体层以欧姆接触优于第二电极层，并且第二电极层含有比第一电极层具有更高等离子体频率的金属。

153. 发明申请

US20050220159A1 Semiconductor laser apparatus and fabrication method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20050220159A1
公开(公告)日：2005-10-06
申请号：US11092947
申请日：2005-03-30
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/40 , H01L29/00 , H01S5/022
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译：蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。这导致第一p电极的一部分被暴露。蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

154. 发明申请

US20050218420A1 Semiconductor laser apparatus and fabrication method thereof 审中-公开
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20050218420A1
公开(公告)日：2005-10-06
申请号：US11076963
申请日：2005-03-11
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/40 , H01L21/00 , H01S5/022 , H01S5/22 , H01S5/32 , H01L33/00
CPC分类号： H01S5/02272 , H01L2224/48463 , H01S5/02469 , H01S5/22 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.
摘要翻译：蓝紫色半导体激光器件具有形成在其上表面上的p电极和形成在其下表面上的n电极。在蓝紫色半导体激光器件中，形成p-n结表面，其中p型半导体和n型半导体接合。红色半导体激光器件具有形成在其上表面上的n电极和形成在其下表面上的p电极。在红色半导体激光器件中，形成p型半导体和n型半导体的p-n结表面。红色半导体激光器件的p电极被接合到蓝紫色半导体激光器件的p电极，使得红色半导体激光器件不与蓝紫色的蓝紫色光束发射点重叠半导体激光器件。

155. 发明申请

US20050199885A1 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20050199885A1
公开(公告)日：2005-09-15
申请号：US11059508
申请日：2005-02-17
申请人： Masayuki Hata , Tatsuya Kunisato
发明人： Masayuki Hata , Tatsuya Kunisato
IPC分类号： H01L21/00 , H01L27/15 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/46
CPC分类号： H01L33/20 , H01L33/38 , H01L33/405 , H01L2933/0016 , H01L2933/0091
摘要： A light-emitting device capable of improving light extraction efficiency is provided. This light-emitting device comprises a support substrate set on a side opposite to a light emission surface and a semiconductor element layer, bonded to the support substrate, having a side surface inclined by a prescribed angle with respect to at least the normal of the light emission surface.
摘要翻译：提供了能够提高光提取效率的发光装置。该发光装置包括设置在与发光面相反的一侧的支撑基板和结合到支撑基板的半导体元件层，其具有相对于光的至少法线倾斜规定角度的侧表面发射面。

156. 发明授权

US06803596B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06803596B2
公开(公告)日：2004-10-12
申请号：US09745998
申请日：2000-12-26
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L2906
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/0421 , H01S5/0607 , H01S5/34333
摘要： An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than the bandgap of the light emitting layer and is smaller than the bandgap of the p-type cladding layer.
摘要翻译：在由p-AlGaN构成的发光层和p型覆盖层之间形成由n-GaN构成的相反导电型的n型层。相反导电类型的n型层的带隙大于发光层的带隙，并且小于p型覆层的带隙。

157. 外观设计

USD466897S1 Combined display monitor and data copying machine 失效
标题翻译：组合式显示器和数据复印机
公开(公告)号：USD466897S1
公开(公告)日：2002-12-10
申请号：US29150062
申请日：2001-11-02
申请人： Masayuki Hata
设计人： Masayuki Hata

158. 发明授权

US5553262A Memory apparatus and method capable of setting attribute of information to be cached 失效
标题翻译：能够设置要缓存的信息的属性的存储装置和方法
公开(公告)号：US5553262A
公开(公告)日：1996-09-03
申请号：US231963
申请日：1994-04-22
申请人： Itsuko Ishida , Masayuki Hata , Tatsuo Yamada
发明人： Itsuko Ishida , Masayuki Hata , Tatsuo Yamada
IPC分类号： G06F12/08 , G06F12/12
CPC分类号： G06F12/0848 , G06F12/0846 , G06F12/0864 , G06F12/0842 , G06F12/127 , G06F2212/601
摘要： A cache memory apparatus allocates memory regions on the basis of information attributes. The required memory region corresponding to the attribute is accessed before caching is implemented. This enables considerable reduction in apparatus that would otherwise be required to be duplicated among different chips corresponding to the number of information attributes. In a multiple data processing implementation, cache memory regions are allocated for each data processor. The required memory regions of the cache memory are accessed in accordance with information specifying the data processor before caching is carried out. To avoid data collision when the main memory data is substantially rewritten, and when data having the same address and different access types exist simultaneously, data representing the type of access is stored. In response to a change in access, all data signals stored in each ways is nullified so that a plurality of data stored in the memory regions is not simultaneously output.
摘要翻译：高速缓存存储装置根据信息属性分配存储区域。在实现缓存之前访问对应于该属性的所需存储区域。这使得能够显着地减少否则将需要在对应于信息属性的数量的不同芯片之间复制的装置。在多重数据处理实现中，为每个数据处理器分配高速缓冲存储器区域。根据在执行缓存之前指定数据处理器的信息来访问高速缓冲存储器的所需存储区域。为了在主存储器数据被重写时避免数据冲突，并且当具有相同地址和不同访问类型的数据同时存在时，存储表示访问类型的数据。响应于访问的变化，以各种方式存储的所有数据信号无效，使得存储在存储器区域中的多个数据不被同时输出。

159. 发明授权

US5544341A Data access apparatus for preventing further cache access in case of an error during block data transfer 失效
标题翻译：数据访问装置，用于在块数据传输期间发生错误时防止进一步的高速缓存访问
公开(公告)号：US5544341A
公开(公告)日：1996-08-06
申请号：US454893
申请日：1995-05-31
申请人： Hiromasa Nakagawa , Akira Yamada , Masayuki Hata
发明人： Hiromasa Nakagawa , Akira Yamada , Masayuki Hata
IPC分类号： G06F12/08 , G11C29/00 , G06F13/00 , G06F11/00
CPC分类号： G11C29/88 , G06F12/0879
摘要： A data processor and method for preventing access to a cache memory when an abnormality occurs during a block data transfer. The data processor is provided with a central processing unit (CPU), a memory and the cache which stores a part of the data being stored in the memory. When the data to be accessed by the central processing unit is not stored in the cache, the data processor employs a block transfer method where the central processing unit reads out from the memory a block of data, including a predetermined number of data (words) in which the data to be accessed is located. When an abnormality, such as a parity error, is detected in transferring a data word in the block of data to be accessed, the cache is inhibited from reading another data word in the block to be accessed, and the CPU stops reading out the rest of the block of data to be read out from the memory, so that the central processing unit can immediately take action to respond to the abnormality.
摘要翻译：一种用于在块数据传送期间发生异常时防止对高速缓存存储器的访问的数据处理器和方法。数据处理器设置有中央处理单元（CPU），存储器和存储存储在存储器中的一部分数据的高速缓存。当中央处理单元要访问的数据不存储在高速缓存中时，数据处理器采用块传送方法，其中中央处理单元从存储器读出包括预定数量的数据（字）的数据块，其中要访问的数据位于其中。当在传送要访问的数据块中的数据字中检测到诸如奇偶校验错误的异常时，禁止高速缓存读取要访问的块中的另一个数据字，并且CPU停止读出其余部分的数据块从存储器读出，使得中央处理单元可以立即采取动作来响应异常。

160. 发明授权

US09316858B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09316858B2
公开(公告)日：2016-04-19
申请号：US14113062
申请日：2012-04-13
申请人： Kohji Yabuta , Tomotoshi Tsujioka , Kosuke Nagata , Mikihiro Noma , Masayuki Hata , Kiyoshi Inada , Hideaki Takizawa , Masahiro Kihara
发明人： Kohji Yabuta , Tomotoshi Tsujioka , Kosuke Nagata , Mikihiro Noma , Masayuki Hata , Kiyoshi Inada , Hideaki Takizawa , Masahiro Kihara
IPC分类号： G02F1/1335 , G02F1/1333 , G06F3/041 , G02F1/1347 , G02F1/1345 , H04N13/04 , G02B5/00 , G02B27/22
CPC分类号： G02F1/133509 , G02B5/008 , G02B27/2214 , G02F1/13338 , G02F1/133512 , G02F1/1345 , G02F1/1347 , G02F2001/133354 , G02F2001/133388 , G02F2201/44 , G02F2202/28 , G06F3/041 , H04N13/31
摘要： A liquid crystal display device includes a liquid crystal display panel, a functional panel, a photo curable adhesive, a transparent electrode, and a light blocking line. The liquid crystal panel includes a display area to display an image and a non-display area surrounding the display area. The functional panel is attached to the liquid crystal panel, and includes a display overlapping area overlapping with the display area and a display non-overlapping area overlapping with the non-display area in a plan view. The photo curable adhesive is arranged between the panels and cured by light applied thereto. The transparent electrode is arranged in the display overlapping area and made of light transmissive conductive material. The light blocking line is arranged in the display non-overlapping area and made of light shielding metal material. The light blocking line partially has a light-transmission cutout that is configured to allow the light to pass therethrough.
摘要翻译：液晶显示装置包括液晶显示面板，功能面板，光固化粘合剂，透明电极和遮光线。液晶面板包括显示图像的显示区域和围绕显示区域的非显示区域。功能面板附接到液晶面板，并且在平面图中包括与显示区域重叠的显示器重叠区域和与非显示区域重叠的显示器非重叠区域。光固化粘合剂布置在面板之间并通过施加于其上的光固化。透明电极布置在显示器重叠区域中并由透光导电材料制成。遮光线布置在显示器非重叠区域中，由遮光金属材料制成。遮光线部分地具有被配置为允许光通过的光透射切口。

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