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    • 148. 发明授权
    • Circuit configuration for receiving a data signal
    • 用于接收数据信号的电路配置
    • US07327766B2
    • 2008-02-05
    • US10247577
    • 2002-09-19
    • Reidar Stief
    • Reidar Stief
    • H04J3/02
    • G11C29/12015G11C7/1051G11C7/1066G11C11/401G11C29/48G11C2207/107
    • In a clock-synchronously operated semiconductor memory, particularly a DDR SDRAM, data are read in clock-synchronously with respect to a data strobe signal in the normal mode, according to standard. During the test mode, a DQ receiver is supplied with the operating clock signal instead of the DQS signal. A downstream memory element is bridged by a direct signal path. To change over, multiplexers/demultiplexers driven by the test mode control signal are provided. The data signal supplied to the memory cell array is available immediately after a write command has been applied to the memory cell array.
    • 在时钟同步操作的半导体存储器中,特别是DDR SDRAM中,根据标准,在正常模式下,以数据选通信号的时钟同步方式读取数据。 在测试模式期间,DQ接收机被提供有操作时钟信号而不是DQS信号。 下游存储器元件由直接信号路径桥接。 为了切换,提供由测试模式控制信号驱动的多路复用器/解复用器。 在将写入命令应用于存储单元阵列之后,提供给存储单元阵列的数据信号立即可用。