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141. 发明授权

US06430015B2 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06430015B2
公开(公告)日：2002-08-06
申请号：US09773743
申请日：2001-02-02
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.
摘要翻译：纵向磁偏置双条磁阻（DSMR）传感器元件包括第一图案化磁阻（MR）层。在图案化磁阻（MR）层的相对端处存在触点，第一对叠层限定第一磁阻（MR）层的轨道宽度，第一对堆叠限定第一磁阻（MR）的磁道宽度，层，每个堆叠包括第一抗铁磁（AFM）层和第一引线层。在第一MR层就位的情况下，器件在存在纵向外部磁场的情况下退火。在先前结构之上形成第二图案化磁阻（MR）层。在第二图案化磁阻（MR）层的相对端具有限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层的触点。第二对堆叠中的每一个包括间隔层由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成。在第二MR层就位的情况下，器件在第二纵向外部磁场的存在下退火。

142. 发明授权

US06393692B1 Method of manufacture of a composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共轭极设计方法
公开(公告)号：US06393692B1
公开(公告)日：2002-05-28
申请号：US09283840
申请日：1999-04-01
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
IPC分类号： H04R3100
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

143. 发明授权

US06387599B2 Corrosion inhibitor of NiCu for high performance writers 失效
标题翻译： NiCu防腐剂用于高性能作者
公开(公告)号：US06387599B2
公开(公告)日：2002-05-14
申请号：US09756013
申请日：2001-01-08
申请人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03F730
CPC分类号： G03F7/322 , C23F1/02 , G11B5/3163 , H05K3/064
摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.
摘要翻译：通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。描述实现这一点的两种方式。在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA的溶液中，随后立即施加光致抗蚀剂，并且包括显影在内的处理正常进行。对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

144. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

145. 发明授权

US06239948B1 Non-magnetic nickel containing conductor alloys for magnetic transducer element fabrication 失效
标题翻译：用于磁换能器元件制造的非磁性含镍导体合金
公开(公告)号：US06239948B1
公开(公告)日：2001-05-29
申请号：US09360120
申请日：1999-07-23
申请人： Xuehua Wu , Kochan Ju , Jei-Wei Chang
发明人： Xuehua Wu , Kochan Ju , Jei-Wei Chang
IPC分类号： G11B5235
CPC分类号： G11B5/235 , G11B5/3109 , G11B5/313 , G11B5/3903 , G11B5/3967
摘要： A non-magnetic conductor material, a magnetic transducer element having formed therein a non-magnetic conductor layer formed of the non-magnetic conductor material and a method for forming a magnetic transducer element having formed therein the non-magnetic conductor layer formed of the non-magnetic conductor material. The non-magnetic conductor material comprises an alloy comprising nickel and at least one non-magnetic conductor metal selected from the group consisting of copper at a weight percent of from about 45 to about 90, zinc at a weight percent of from about 20 to about 75, cadmium at a weight percent of from about 35 to about 85, platinum at a weight percent of from about 55 to about 90 and palladium at a weight percent of from about 75 to about 95. The non-magnetic conductor material contemplates the magnetic transducer element and the method for forming the magnetic transducer element. The non-magnetic conductor material has physical properties, chemical properties and electrochemical properties, but not magnetic properties, analogous to the physical properties, chemical properties and electrochemical properties exhibited by magnetic layers employed within magnetic transducer elements.
摘要翻译：一种非磁性导体材料，其中形成有由非磁性导体材料形成的非磁性导体层的磁性换能器元件以及形成其中形成有非磁性导体材料的非磁性导体层的磁性换能器元件的方法，磁导体材料。非磁性导体材料包括合金，其包含镍和至少一种选自重量百分比约为45至约90的铜的非磁性导体金属，重量百分比约为20至约20的锌 75，重量百分比为约35至约85的镉，以重量百分比为约55至约90的铂，以及重量百分比为约75至约95的钯。非磁性导体材料考虑了磁性换能器元件和形成磁换能器元件的方法。非磁性导体材料具有物理性质，化学性质和电化学性质，但不具有类似于在磁换能器元件内使用的磁性层所表现的物理性能，化学性质和电化学性能的磁性能。

146. 发明授权

US5920980A Method of making a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：制造具有电绝缘软相邻层（SAL）的软相邻层（SAL）磁阻（MR）传感器元件的方法
公开(公告)号：US5920980A
公开(公告)日：1999-07-13
申请号：US810060
申请日：1997-03-05
申请人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
发明人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/42
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B5/399 , G11B5/3932 , Y10T29/49044 , Y10T29/49046
摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is then formed over the substrate a soft adjacent layer (SAL). There is then formed upon the soft adjacent layer (SAL) a dielectric layer. There is then formed at least in part contacting the dielectric layer a magnetoresistive (MR) layer, where the soft adjacent layer (SAL) and the dielectric layer are planar. The method contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method.
摘要翻译：软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。为了实践该方法，首先提供了一种衬底。然后在衬底上形成软相邻层（SAL）。然后在软相邻层（SAL）上形成介电层。然后形成至少部分地使电介质层与磁阻（MR）层接触，其中软相邻层（SAL）和电介质层是平面的。该方法考虑了通过该方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

147. 发明授权

US5719730A Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head 失效
标题翻译：低边缘场和窄写磁阻（MR）磁读写头
公开(公告)号：US5719730A
公开(公告)日：1998-02-17
申请号：US682476
申请日：1996-07-17
申请人： Jei-Wei Chang , Kochan Ju , Yimin Guo , Xizeng Shi , Arthur Hungshin Tao
发明人： Jei-Wei Chang , Kochan Ju , Yimin Guo , Xizeng Shi , Arthur Hungshin Tao
IPC分类号： G11B5/012 , G11B5/187 , G11B5/265 , G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1871 , G11B5/2651 , G11B5/3103 , G11B5/3116 , G11B5/3967 , G11B2005/3996 , G11B5/012
摘要： A low fringe-field and narrow write-track magnetic read-write head. The low fringe-field and narrow write-track magnetic read-write head includes a first pole layer formed adjoining an insulator layer over a substrate. The first pole layer has a first air bearing surface which has a first edge adjoining and parallel with a first surface of the insulator layer. The low fringe-field and narrow write-track magnetic read-write head also includes a second pole layer separated from the first pole layer by the insulator layer. The second pole layer has a width no greater than about 20 microns and a width no greater than about 100 percent of the width of the first pole layer where the width of the second pole layer is contained within the width of the first pole layer. The second pole layer also has a second air bearing surface coplanar with the first air bearing surface. The second air bearing surface has a second edge adjoining and parallel with a second surface of the insulator layer parallel and opposite from the first surface of the insulator layer. Finally, there is removed at least one portion of at least one of: (1) the second air bearing surface including at least one outer portion of the second edge; and (2) the first air bearing surface including at least one portion of the first edge most closely adjoining but not opposite the second edge.
摘要翻译：低边缘场和窄写磁道磁读写头。低条纹场和窄写磁道磁读写头包括邻近衬底上的绝缘体层形成的第一极层。第一极层具有第一空气轴承表面，其具有与绝缘体层的第一表面相邻并平行的第一边缘。低条纹场和窄写磁道磁读写头还包括通过绝缘体层与第一极层分离的第二极层。第二极层的宽度不大于约20微米，宽度不大于第一极层的宽度的第一极层的宽度的大约百分之百，其中第二极层的宽度包含在第一极层的宽度内。第二极层还具有与第一空气轴承表面共面的第二空气轴承表面。第二空气轴承表面具有与绝缘体层的与绝缘体层的第一表面平行且相对的绝缘体层的第二表面相邻并平行的第二边缘。最后，移除至少一部分至少一个：（1）第二空气支承表面包括第二边缘的至少一个外部部分; 和（2）所述第一空气轴承表面包括所述第一边缘的至少一部分最接近但不相对于所述第二边缘。

148. 发明授权

US5652687A Planarized thin film magnetic write head with submicron trackwidth 失效
标题翻译：具有亚微米轨道宽度的平面化薄膜磁写头
公开(公告)号：US5652687A
公开(公告)日：1997-07-29
申请号：US531530
申请日：1995-09-21
申请人： Mao-Min Chen , Kochan Ju , Neil Leslie Robertson , Hugo Alberto Emilio Santini
发明人： Mao-Min Chen , Kochan Ju , Neil Leslie Robertson , Hugo Alberto Emilio Santini
IPC分类号： G11B5/187 , G11B5/23 , G11B5/235 , G11B5/31 , G11B5/147
CPC分类号： G11B5/3103 , G11B5/3116 , G11B5/3133 , G11B5/3146 , G11B5/1872 , G11B5/232 , G11B5/235 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A thin film magnetic write head is provided with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.
摘要翻译：薄膜磁性写头设置有位于两个极层之一的顶部上的凹口结构。凹口结构是大致U形的薄膜层，其在U形内部形成沟槽，用于容纳头部的磁极尖端区域中的一个或多个极尖端层。凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。凹口结构是明确的，这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。

149. 发明授权

US5452165A Close packed magnetic head linear array 失效
标题翻译：封闭磁头线性阵列
公开(公告)号：US5452165A
公开(公告)日：1995-09-19
申请号：US214902
申请日：1994-03-16
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
IPC分类号： G11B5/008 , G11B5/012 , G11B5/31 , G11B5/48 , G11B5/56 , G11B5/584 , G11B5/29
CPC分类号： G11B5/3103 , G11B5/3183 , G11B5/4886 , G11B5/4893 , G11B5/56 , G11B5/584 , G11B5/00817 , G11B5/012
摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.
摘要翻译：本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。轨道间距为Dsinθ。轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。该厚度可以在3μm左右。具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。这样可以处理高数据速率。本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。可根据需要使用额外的磁头进行伺服控制。

150. 发明授权

US5375023A Submicron thin film inductive head with self-aligned staggered pole-tips 失效
标题翻译：亚微米薄膜感应头具有自对准交错极点
公开(公告)号：US5375023A
公开(公告)日：1994-12-20
申请号：US998171
申请日：1992-12-29
申请人： Kochan Ju , Mohamad T. Krounbi , Po-Kang Wang
发明人： Kochan Ju , Mohamad T. Krounbi , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/23 , G11B5/127 , G11B5/147
CPC分类号： G11B5/3163 , G11B5/3116
摘要： A thin film inductive head having staggered pole-tips with a self-aligned recording gap region. The recording gap region is bounded by stepped pole-tip element with the steps made large with respect to the gap thickness. The pole-tip layers extend back from the air bearing surface to form a throat region that is also large with respect to the gap thickness. The self-aligned staggered pole-tip geometry is suitable for submicron track widths because the pole-tips may themselves be much wider and the self-aligned configuration avoids submicron masking and registration difficulties. The stepped pole-tip surfaces also eliminate the side-writing problem known in the art for overlapping thin film poles.
摘要翻译：具有具有自对准记录间隙区域的交错极尖的薄膜感应头。记录间隙区域由步进的极尖元件限定，相对于间隙厚度的步长较大。极尖层从空气支承表面向后延伸以形成相对于间隙厚度也很大的喉部区域。自对准交错极尖几何形状适用于亚微米轨道宽度，因为极尖本身可能宽得多，并且自对准配置避免了亚微米掩蔽和配准困难。阶梯式极尖表面也消除了本领域已知的用于重叠薄膜极的侧面写入问题。

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