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    • 131. 发明授权
    • Exposure apparatus, method for producing the same, and exposure method
    • 曝光装置及其制造方法以及曝光方法
    • US06359678B1
    • 2002-03-19
    • US09567971
    • 2000-05-10
    • Kazuya Ota
    • Kazuya Ota
    • G03B2742
    • G03F7/707G03F7/70233G03F7/7025G03F7/70283G03F7/70358G03F7/70708G03F7/70775G03F7/70891G03F9/70G03F9/7026G03F9/7034
    • When an illumination light beam is radiated by an illumination system at a predetermined angle of incidence &thgr; with respect to a pattern plane of a mask, the illumination light beam is reflected by the pattern plane. The reflected light beam is projected by a projection optical system PO onto a substrate, and a pattern in an area on the mask illuminated with the illumination light beam is transferred onto the substrate. During the transfer, a stage control system is operated to synchronously move a mask stage and a substrate stage in the Y direction, while adjusting a relative position of the mask in the Z direction with respect to the projection optical system, on the basis of predetermined adjusting position information. Accordingly, although the mask side of the projection optical system is non-telecentric, it is possible to effectively suppress the occurrence of the magnification error and the positional discrepancy in a transferred image of the pattern on the substrate due to Z displacement of the mask. As a result, the overlay accuracy is improved. The present invention is especially preferred to perform exposure at high resolution with an illumination light beam in the soft X-ray region.
    • 当相对于掩模的图案平面以照射系统以预定的入射角照射照明光束时,照明光束被图案平面反射。 反射光束通过投影光学系统PO投影到基板上,并且用照明光束照射的掩模上的区域中的图案被转印到基板上。 在传送期间,操作台控制系统,以在Y方向上同步移动掩模台和基板台,同时基于预定的方式调整掩模在Z方向上相对于投影光学系统的相对位置 调整位置信息。 因此,虽然投影光学系统的掩模侧是非远心的,但是由于掩模的Z位移,可以有效地抑制基板上的图案的转印图像的放大误差的发生和位置偏差的发生。 结果,覆盖精度提高。 本发明特别优选以软X射线区域中的照明光束以高分辨率进行曝光。
    • 132. 发明授权
    • Projection exposure apparatus for transferring mask pattern onto photosensitive substrate
    • 将掩模图案转印到感光基片上的投影曝光装置
    • US06327025B1
    • 2001-12-04
    • US09722311
    • 2000-11-28
    • Yuji Imai
    • Yuji Imai
    • G03B2742
    • G03F9/7026G03F9/7034
    • A projection exposure apparatus detects positions at the measurement points (P1-P5) in the Z-direction on the shot area of the wafer W, and obtains the distribution of the irregularity of the shot area based on the detected result and the pre-known process structure data. For example, when the pattern leaving the narrowest line width is exposed in the pattern area (40B), the pattern area (40B) is made as a focusing reference plane and the difference in level (ZA−ZB) of another area of which reference is pattern area (40B) is added to the level of the best image plane (42) as an offset value. The pattern area (40B) is focused to the best image plane (42) by fitting image plane (42A) to the exposure surface.
    • 投影曝光装置检测晶片W的拍摄区域的Z方向上的测量点(P1-P5)的位置,并根据检测结果和预先知道的方式获得拍摄区域的不规则性的分布 过程结构数据。 例如,当在图案区域(40B)中露出离开最窄线宽度的图案时,图案区域(40B)被制成聚焦基准面,并且其另一区域的参考点(ZA-ZB) 将图案区域(40B)添加到最佳图像平面(42)的水平作为偏移值。 图案区域(40B)通过将图像平面(42A)装配到曝光表面而聚焦到最佳图像平面(42)。
    • 136. 发明授权
    • Method and apparatus for wafer-focusing
    • 晶圆聚焦方法和装置
    • US5748323A
    • 1998-05-05
    • US788124
    • 1997-01-23
    • Harry J. Levinson
    • Harry J. Levinson
    • G03F7/207G03F9/00G01B11/00
    • G03F9/7026
    • A method and apparatus wherein the height over the complete surface of interest on a wafer/material is scanned and mapped, using either a central or non-central focus system. The type of data gathered is similar to that which is normally acquired in operation of the particular focusing system indicative of the wafer/material surface height. The difference is that according to the present invention, a much larger number of data points are sampled and then processed in a novel manner to provide improved focus information. These data are stored and used to calculate corrections in both the vertical position/height and tilt of the material/wafer for each exposure field, such as the areas (34) in FIGS. 5b and 6b. The invention sorts out selected height data indicating periodic variations in surface height. Such data are normally not indicative of true wafer surface height variations, but instead are the result of periodic variations in wafer material composition caused by underlying structure relating to the particular circuitry. These periodic variations are distinguished from non-periodic variations, and are subtracted out of the total height measurement data to yield corrected surface height data. The present invention uses the corrected surface height data to calculate an optimum focus height for a given exposure area such as 34.
    • 一种方法和装置,其中使用中央或非中心聚焦系统扫描和映射在晶片/材料上的整个感兴趣的表面上的高度。 收集的数据类型与通常在指示晶片/材料表面高度的特定聚焦系统的操作中获得的类型相似。 不同之处在于,根据本发明,以更新的方式对大量的数据点进行采样和处理,以提供改进的聚焦信息。 这些数据被存储并用于计算每个曝光场的材料/晶片的垂直位置/高度和倾斜度的校正,诸如图1和图2中的区域(34)。 5b和6b。 本发明对表示高度的周期性变化的所选高度数据进行分类。 这样的数据通常不表示真实的晶片表面高度变化,而是由与特定电路相关的底层结构引起的晶片材料组成的周期性变化的结果。 这些周期性变化与非周期性变化区分开,并从总高度测量数据中减去,以产生校正的表面高度数据。 本发明使用校正的表面高度数据来计算例如34的给定曝光区域的最佳聚焦高度。
    • 137. 发明授权
    • Aligner and contamination detecting method
    • 对准器和污染检测方法
    • US5710624A
    • 1998-01-20
    • US564564
    • 1995-11-29
    • Shinji Utamura
    • Shinji Utamura
    • G03F9/02G03F7/20G03F9/00H01L21/027G01N21/88
    • G03F9/7026G03F7/707G03F7/70866
    • An aligner for exposing a pattern image of an original plate by projecting the image onto an exposure surface of a substrate, which is held on a table, in a focused state through a projection optical system includes a defocusing detection device for detecting a deviation from a focusing position at each of a plurality of points within an exposure region on the surface of the substrate, which is arranged at an exposure position, a device for determining an approximate plane of the exposure surface of the substrate within the exposure region on the basis of deviation detection values detected at the plurality of points by the defocusing detection device and a decision device for determining a deviation of the approximate plane of the exposure surface of the substrate, on the basis of the deviation detection values detected at each of the plurality of points, to decide whether contamination is present between the table and the back side of the substrate. Also disclosed is a contamination detecting method applied to such an aligner.
    • 用于通过投影光学系统以聚焦状态将图像投影到保持在桌子上的基板的曝光表面上来曝光原版的图案图像的对准器包括:散焦检测装置,用于检测与 基于布置在曝光位置的基​​板的表面上的曝光区域内的多个点中的每一个上的聚焦位置,基于在曝光区域内确定基板的曝光表面的近似平面的装置 基于通过散焦检测装置在多个点处检测到的偏差检测值和用于基于在多个点中的每一个点处检测到的偏差检测值来确定基板的曝光表面的近似平面的偏差的判定装置 ,以确定桌子和衬底的背面之间是否存在污染物。 还公开了应用于这种对准器的污染检测方法。
    • 138. 发明授权
    • Alignment method for use in an exposure system
    • 在曝光系统中使用的对准方法
    • US5674651A
    • 1997-10-07
    • US534037
    • 1995-09-26
    • Kenji Nishi
    • Kenji Nishi
    • G03F9/00
    • G03F9/7026
    • An alignment method for aligning a plurality of areas on a substrate with predetermined positions, comprising the steps of (1) measuring the array coordinates of n sample shots where an initial value of n is N, and obtaining three times the standard deviation of the nonlinear error components by processing the results of the measurement; (2) calculating an evaluation value A.sub.n by dividing the value obtained in the step (1) by a predetermined function; (3) for (n-1) sample shots which are obtained by removing a sample shot in which the nonlinear error component is largest, obtaining an evaluation value A.sub.n-1 from three times the standard deviation of the nonlinear error components, and hereinafter in the same way subsequently removing sample shots in which the nonlinear error component is large and calculating evaluation values A.sub.n-2, A.sub.n-3, . . . ; and (4) removing a sample shot in which the nonlinear error component is largest, as a jump shot, in a range where the evaluation value A.sub.n is larger than an average value of the calculated evaluation values.
    • 一种用于将衬底上的多个区域对准预定位置的对准方法,包括以下步骤:(1)测量n个初始值为N的n个采样镜头的阵列坐标,并获得三次非线性标准偏差 误差组件通过处理测量结果; (2)通过将步骤(1)中获得的值除以预定函数来计算评估值An; (3)对于通过去除其中非线性误差分量最大的样本射击而获得的(n-1)个采样点,从非线性误差分量的标准偏差的三倍获得评估值An-1,并且在下文中 然后以相同的方式去除非线性误差分量较大的样本,并计算评估值An-2,An-3。 。 。 ; 以及(4)在评价值An大于计算出的评价值的平均值的范围内,移除非线性误差成分最大的样本拍摄作为跳投。