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131. 发明申请

US20050069814A1 Pattern formation method 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20050069814A1
公开(公告)日：2005-03-31
申请号：US10859121
申请日：2004-06-03
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/40 , G03C5/00 , G03F7/00 , H01L21/027
CPC分类号： G03F7/40
摘要： A resist film is formed on a substrate, and pattern exposure is performed by selectively irradiating the resist film with exposing light. A first resist pattern is formed by developing the resist film after the pattern exposure, and subsequently, a water-soluble film including a crosslinking agent that crosslinks a material of the resist and an acid, that is, a crosslinkage accelerator for accelerating a crosslinking reaction of the crosslinking agent, is formed over the substrate including the first resist pattern. Thereafter, a crosslinking reaction is caused by annealing between a portion of the water-soluble film and a portion of the first resist pattern in contact with each other on the sidewall of the first resist pattern, and then, a portion of the water-soluble film not reacted with the first resist pattern is removed. Thus, a second resist pattern made of the first resist pattern and the water-soluble film remaining on the sidewall of the first resist pattern is formed.
摘要翻译：在基板上形成抗蚀剂膜，并通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后，通过显影抗蚀剂膜形成第一抗蚀剂图案，随后形成包含交联抗蚀剂材料和酸的交联剂的水溶性膜，即用于加速交联反应的交联促进剂的交联剂形成在包括第一抗蚀剂图案的基板上。此后，通过在第一抗蚀剂图案的侧壁上的水溶性膜的一部分和第一抗蚀剂图案的一部分之间的接触退火引起交联反应，然后，将一部分水溶性除去与第一抗蚀剂图案不反应的膜。因此，形成由第一抗蚀剂图案和保留在第一抗蚀剂图案的侧壁上的水溶性膜制成的第二抗蚀剂图案。

132. 发明授权

US5679500A Method of forming micropatterns utilizing silylation and overall energy beam exposure 失效
标题翻译：使用甲硅烷基化和总能量束曝光形成微图案的方法
公开(公告)号：US5679500A
公开(公告)日：1997-10-21
申请号：US564822
申请日：1995-11-29
申请人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
发明人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26 , G03F7/32 , H01L21/027 , H01L21/033 , G03F7/36 , G03F7/38
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译：通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸并与酸反应。如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸，使得暴露部分的表面由酸形成亲水性。如果将水蒸汽供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。如果甲基三乙氧基硅烷的蒸气在相对湿度为95％的空气中被喷涂在抗蚀剂膜的表面上，则在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。

133. 发明授权

US5401932A Method of producing a stencil mask 失效
标题翻译：生产模板掩模的方法
公开(公告)号：US5401932A
公开(公告)日：1995-03-28
申请号：US13100
申请日：1993-02-03
申请人： Kazuhiko Hashimoto , Masayuki Endo , Masaru Sasago
发明人： Kazuhiko Hashimoto , Masayuki Endo , Masaru Sasago
IPC分类号： B23H9/00 , B23H9/14 , G03F1/20 , B23H1/00 , G03F1/16
CPC分类号： G03F1/20 , B23H9/00 , B23H9/14
摘要： The reverse side of a substrate made of stainless steel is subjected to electro-discharge machining using a thick electrode having a diameter of about 10 .mu.m, thus selectively etching other part than the edge of the reverse side of the substrate. This electro-discharge machining causes the other part than the edge of the substrate to be thinned to a thickness of about 10 .mu.m. The surface of the substrate thus thinned is subjected to electro-discharge machining using a slender electrode having a diameter of about 3 .mu.m, thus forming a pattern having a predetermined configuration in the surface of the substrate. Further, the surface of the substrate is etched with the use of the slender electrode, so that the pattern of the silicon substrate is pierced, thus forming a pattern having vertical through-holes. Thus, by using, as a mask material, a substrate solely made of stainless steel as it is, there can be produced a stencil mask which is excellent in mechanical strength and thermal stability and which is not thermally distorted.
摘要翻译：使用直径约10μm的厚电极对由不锈钢制成的基板的背面进行放电加工，从而选择性地蚀刻比衬底背面的其它部分的其它部分。这种放电加工使得除了衬底的边缘之外的其它部分被减薄到约10μm的厚度。使用直径约3μm的细长电极对如此减薄的基板的表面进行放电加工，从而在基板的表面形成具有预定构造的图案。此外，利用细长的电极蚀刻衬底的表面，使得硅衬底的图案被刺穿，从而形成具有垂直通孔的图案。因此，通过使用仅由不锈钢制成的基材作为掩模材料，可以制造机械强度和热稳定性优异且不发生热变形的模板掩模。

134. 发明授权

US4910123A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US4910123A
公开(公告)日：1990-03-20
申请号：US137711
申请日：1987-12-24
申请人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
发明人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
IPC分类号： C08F8/30 , C08G8/28 , G03F7/039
CPC分类号： G03F7/039 , C08F8/30 , C08G8/28 , Y10S430/146
摘要： Disclosed is a pattern forming method using pattern forming material which is reactive to a light of 249 nm or so such as DUV light or excimer laser light and applicable to manufacture of semiconductors. The material used in this method includes resin which includes a bonding unit of ##STR1## and has low absorption near 249 nm after light exposure, and is soluble in a solvent which dissolves the resin. By this method, a fine pattern of high contrast can be obtained.
摘要翻译：公开了使用与249nm左右的光反应的图案形成材料的图案形成方法，例如DUV光或准分子激光，并且可用于制造半导体。在该方法中使用的材料包括具有的接合单元并且在曝光后接近249nm的低吸收性的树脂，并且可溶于溶解树脂的溶剂中。通过该方法，可以获得高对比度的精细图案。

135. 发明授权

US4840872A Pattern forming method by use of X-ray exposure 失效
标题翻译：使用X射线曝光的图案形成方法
公开(公告)号：US4840872A
公开(公告)日：1989-06-20
申请号：US108698
申请日：1987-10-15
申请人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
发明人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
IPC分类号： H01L21/027 , G03F7/038 , G03F7/20
CPC分类号： G03F7/2039 , G03F7/038 , Y10S430/125 , Y10S430/167 , Y10S430/168
摘要： A pattern forming method in which a water-soluble organic film absorbing secondary electrons or soft X-rays is formed on a resist layer and thereafter, pattern exposure, development are carried out. The water-soluble organic film containing halogen, sulfur, metal atom, etc. absorbs secondary electrons or soft X-rays which are generated from a mask in X-rays exposure so that only X-rays passed through openings of the mask are applied to a resist layer and a super fine pattern of high aspect ratio can be obtained.
摘要翻译：在抗蚀剂层上形成吸收二次电子或软X射线的水溶性有机膜，然后进行图案曝光，显影的图案形成方法。含有卤素，硫，金属原子等的水溶性有机膜在X射线曝光中吸收从掩模产生的二次电子或软X射线，使得仅穿过掩模的开口的X射线被施加到可以获得高纵横比的抗蚀剂层和超细纹图案。

136. 发明授权

US4812880A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4812880A
公开(公告)日：1989-03-14
申请号：US67122
申请日：1987-06-29
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G03B27/54 , G03B27/42
CPC分类号： G03F9/70 , G03F7/2006
摘要： Disclosed is an exposure apparatus used in photolithographic process in fabrication of semiconductor devices. More particularly, in an exposure apparatus using an excimer laser, the TTL alignment is achieved by using light with wavelengths of 300 to 400 nm, different from that of excimer laser for exposure, for the purpose of alignment.
摘要翻译：公开了一种在制造半导体器件的光刻工艺中使用的曝光装置。更具体地说，在使用准分子激光的曝光装置中，为了进行对准，通过使用与用于曝光的准分子激光器不同的波长为300〜400nm的光来实现TTL对准。

137. 发明申请

US20110189616A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20110189616A1
公开(公告)日：2011-08-04
申请号：US13085232
申请日：2011-04-12
申请人： Masayuki ENDO , Masaru Sasago
发明人： Masayuki ENDO , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

138. 发明授权

US07939242B2 Barrier film material and pattern formation method using the same 有权
标题翻译：阻挡膜材料和图案形成方法使用相同
公开(公告)号：US07939242B2
公开(公告)日：2011-05-10
申请号：US12046996
申请日：2008-03-12
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/20 , G03F7/40
CPC分类号： G03F7/2041 , G03F7/11
摘要： A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.
摘要翻译：除了碱溶性聚合物之外，阻挡膜材料还包含具有多个羧基或多价醇化合物的多价羧酸化合物。因此，多价羧酸化合物或多价醇化合物附着在抗蚀剂膜的表面上，因此除去阻挡膜后除去附着在抗蚀剂膜表面的颗粒。此外，在显影时同时除去阻挡膜的情况下，可以防止部分未溶解的抗蚀剂膜。

139. 发明授权

US07923522B2 Process for preparing a dispersion liquid of zeolite fine particles 有权
标题翻译：制备沸石微粒分散液的方法
公开(公告)号：US07923522B2
公开(公告)日：2011-04-12
申请号：US12060291
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
IPC分类号： C08G77/08
CPC分类号： H01L21/31695 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/249953
摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.
摘要翻译：本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。通过该方法获得的沸石细颗粒的分散液。

140. 发明授权

US07919005B2 Dry etching method, fine structure formation method, mold and mold fabrication method 有权
标题翻译：干蚀刻法，精细结构形成法，模具和模具制造方法
公开(公告)号：US07919005B2
公开(公告)日：2011-04-05
申请号：US11659109
申请日：2006-05-23
申请人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
发明人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： C03B11/082 , B81C1/00531 , B81C2201/0143 , C03B11/084 , C03B2215/07 , C03B2215/412 , C04B41/009 , C04B41/5346 , C04B41/91 , C23F4/00 , G02B6/136 , Y02P40/57 , C04B41/0054 , C04B35/56
摘要： A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.
摘要翻译：通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

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