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1. 发明授权

US4812880A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4812880A
公开(公告)日：1989-03-14
申请号：US67122
申请日：1987-06-29
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G03B27/54 , G03B27/42
CPC分类号： G03F9/70 , G03F7/2006
摘要： Disclosed is an exposure apparatus used in photolithographic process in fabrication of semiconductor devices. More particularly, in an exposure apparatus using an excimer laser, the TTL alignment is achieved by using light with wavelengths of 300 to 400 nm, different from that of excimer laser for exposure, for the purpose of alignment.
摘要翻译：公开了一种在制造半导体器件的光刻工艺中使用的曝光装置。更具体地说，在使用准分子激光的曝光装置中，为了进行对准，通过使用与用于曝光的准分子激光器不同的波长为300〜400nm的光来实现TTL对准。

2. 发明授权

US4805000A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4805000A
公开(公告)日：1989-02-14
申请号：US104041
申请日：1987-10-02
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F7/20 , G03B27/42 , G03B27/52 , G03B27/70
CPC分类号： G03F7/70691 , G03F7/70833 , G03F7/709
摘要： An exposure apparatus for use in manufacturing a semiconductor device which includes a KrF laser as an Excimer laser, a reduction projective type exposure optical system for applying laser beam emitted the laser on a wafer, and a support with vibration absorption function on which the KrF laser is mounted separately from the exposure optical system. The light axis of a light path between the KrF laser and the exposure optical system coincides with direction of vibration which is absorbed in the support.Thereby, shock wave produced from KrF laser upon discharge operation may be absorbed in said support without giving any bad effect to other components.
摘要翻译：一种用于制造半导体器件的曝光装置，该半导体器件包括作为准分子激光器的KrF激光器，用于将发射激光的激光束施加在晶片上的还原投射型曝光光学系统以及具有振动吸收功能的支撑件，其中KrF激光器与曝光光学系统分开安装。 KrF激光器和曝光光学系统之间的光路的光轴与支撑体中吸收的振动方向重合。因此，在放电操作时由KrF激光产生的冲击波可以被吸收在所述支撑件中，而不会对其它部件产生任何不良影响。

3. 发明授权

US4724466A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4724466A
公开(公告)日：1988-02-09
申请号：US4133
申请日：1987-01-16
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F7/70691 , G03F7/70833 , G03F7/709
摘要： An exposure apparatus for use in manufacturing a semiconductor device which includes a KrF laser as an Excimer laser, a reduction projective type exposure optical system for applying laser beam emitted the laser on a wafer, and a support with vibration absorption function on which the KrF laser is mounted separately from the exposure optical system. The light axis of a light path between the KrF laser and the exposure optical system coincides with direction of vibration which is absorbed in the support.Thereby, shock wave produced from KrF laser upon discharge operation may be absorbed in said support without giving any bad effect to other components.
摘要翻译：一种用于制造半导体器件的曝光装置，该半导体器件包括作为准分子激光器的KrF激光器，用于将发射激光的激光束施加在晶片上的还原投射型曝光光学系统以及具有振动吸收功能的支撑件，其中KrF激光器与曝光光学系统分开安装。 KrF激光器和曝光光学系统之间的光路的光轴与支撑体中吸收的振动方向重合。因此，在放电操作时由KrF激光产生的冲击波可以被吸收在所述支撑件中，而不会对其它部件产生任何不良影响。

4. 发明授权

US4782368A Method for correction for chromatic aberration and exposure apparatus using the same 失效
标题翻译：色差校正方法及使用其的曝光装置
公开(公告)号：US4782368A
公开(公告)日：1988-11-01
申请号：US70715
申请日：1987-07-07
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F9/00 , G03B27/52
CPC分类号： G03F9/70
摘要： Disclosed is an exposure apparatus used in a photolithographic process in fabrication of semiconductor devices. More particularly, in the exposure apparatus using an excimer laser, the beam splitter, mirror and lens for correction for chromatic aberration are combined in the alignment optical system. Furthermore, a mirror is disposed at the opposite side of the image pickup camera of the alignment key by way of the beam splitter.
摘要翻译：公开了一种在制造半导体器件的光刻工艺中使用的曝光装置。更具体地，在使用准分子激光的曝光装置中，在对准光学系统中组合用于色差校正的分束器，反射镜和透镜。此外，镜子通过分束器设置在对准键的图像拾取相机的相对侧。

5. 发明授权

US4805002A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4805002A
公开(公告)日：1989-02-14
申请号：US61263
申请日：1987-06-12
申请人： Masaru Sasago , Masayuki Endo , Kazufumi Ogawa , Takeshi Ishihara
发明人： Masaru Sasago , Masayuki Endo , Kazufumi Ogawa , Takeshi Ishihara
IPC分类号： G03F7/20 , G03B27/54 , G03B27/42
CPC分类号： G03F7/702
摘要： A reduction projection exposure apparatus includes an excimer laser beam source, and a concave spherical mirror disposed in the optical path between the light source optical system and a reticle, so as to minimize the overall height of the optical system (in particular, the reduction projection exposure apparatus) and to increase the degree of freedom of optical design. The apparatus is more than 25% shorter than the conventional apparatus, and a high degree of freedom is obtained in the optical design.
摘要翻译：还原投影曝光装置包括准分子激光束源和设置在光源光学系统和光罩之间的光路中的凹球面镜，以使光学系统的整体高度（特别是减小投影曝光装置），并增加光学设计的自由度。该装置比常规装置短25％以上，并且在光学设计中获得高度的自由度。

6. 发明授权

US4910123A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US4910123A
公开(公告)日：1990-03-20
申请号：US137711
申请日：1987-12-24
申请人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
发明人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
IPC分类号： C08F8/30 , C08G8/28 , G03F7/039
CPC分类号： G03F7/039 , C08F8/30 , C08G8/28 , Y10S430/146
摘要： Disclosed is a pattern forming method using pattern forming material which is reactive to a light of 249 nm or so such as DUV light or excimer laser light and applicable to manufacture of semiconductors. The material used in this method includes resin which includes a bonding unit of ##STR1## and has low absorption near 249 nm after light exposure, and is soluble in a solvent which dissolves the resin. By this method, a fine pattern of high contrast can be obtained.
摘要翻译：公开了使用与249nm左右的光反应的图案形成材料的图案形成方法，例如DUV光或准分子激光，并且可用于制造半导体。在该方法中使用的材料包括具有的接合单元并且在曝光后接近249nm的低吸收性的树脂，并且可溶于溶解树脂的溶剂中。通过该方法，可以获得高对比度的精细图案。

7. 发明授权

US4840872A Pattern forming method by use of X-ray exposure 失效
标题翻译：使用X射线曝光的图案形成方法
公开(公告)号：US4840872A
公开(公告)日：1989-06-20
申请号：US108698
申请日：1987-10-15
申请人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
发明人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
IPC分类号： H01L21/027 , G03F7/038 , G03F7/20
CPC分类号： G03F7/2039 , G03F7/038 , Y10S430/125 , Y10S430/167 , Y10S430/168
摘要： A pattern forming method in which a water-soluble organic film absorbing secondary electrons or soft X-rays is formed on a resist layer and thereafter, pattern exposure, development are carried out. The water-soluble organic film containing halogen, sulfur, metal atom, etc. absorbs secondary electrons or soft X-rays which are generated from a mask in X-rays exposure so that only X-rays passed through openings of the mask are applied to a resist layer and a super fine pattern of high aspect ratio can be obtained.
摘要翻译：在抗蚀剂层上形成吸收二次电子或软X射线的水溶性有机膜，然后进行图案曝光，显影的图案形成方法。含有卤素，硫，金属原子等的水溶性有机膜在X射线曝光中吸收从掩模产生的二次电子或软X射线，使得仅穿过掩模的开口的X射线被施加到可以获得高纵横比的抗蚀剂层和超细纹图案。

8. 发明授权

US4849323A Pattern forming method using contrast enhanced material 失效
标题翻译：使用对比增强材料的图案形成方法
公开(公告)号：US4849323A
公开(公告)日：1989-07-18
申请号：US83199
申请日：1987-08-10
申请人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
发明人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
IPC分类号： G03F7/095 , G03C1/00 , G03F7/09 , G03F7/11 , H01L21/027
CPC分类号： G03C1/00 , G03F7/091
摘要： Disclosed is a pattern forming method using contrast enhanced material for enhancing the resolution and contrast when forming patterns in fabrication of semiconductors or the like. This pattern forming method comprises a step of applying a contrast enhanced material for pattern forming on a photoresist, a step of exposing and a step of developing.The contrast enhanced material is a water-soluble material using a novel diazo compound so that the coefficient A of the contrast may be 10 or more, and when it is combined with g-line exposure to be used in pattern formation, a pattern of 0.5 .mu.m or less may be formed.The diazo compound may be represented, for example, by ##STR1##
摘要翻译：公开了使用对比度增强材料的图案形成方法，用于在半导体等的制造中形成图案时提高分辨率和对比度。该图案形成方法包括在光致抗蚀剂上施加用于图案形成的对比度增强材料的步骤，曝光步骤和显影步骤。对比度增强材料是使用新型重氮化合物的水溶性材料，使得对比度的系数A可以为10以上，并且当与用于图案形成的g线暴露组合时，图案为0.5 可以形成μm以下。重氮化合物可以例如通过来表示

9. 发明授权

US4841341A Integrator for an exposure apparatus or the like 失效
标题翻译：用于曝光装置等的积分器
公开(公告)号：US4841341A
公开(公告)日：1989-06-20
申请号：US61266
申请日：1987-06-12
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Ken Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Ken Ishihara
IPC分类号： G03F7/20
CPC分类号： G03F7/70058
摘要： An exposure apparatus for manufacturing semiconductor devices and in particular an excimer laser exposure apparatus includes, an integrator for uniformly distributing the excimer laser beam used as an exposure light source to render the exposure illuminance uniform at an exposure area. The integrator is characterized by a plurality of concentric-circular or parallel stripe-like recesses on one of two main opposing surfaces so that the light entering one main surface is dispersively radiated fromthe other main surface to render the excimer laser light from the light source uniform so as to reduce uneven exposure illuminance in the exposure area.
摘要翻译：用于制造半导体器件的曝光装置，特别是准分子激光曝光装置包括：用于均匀分布用作曝光光源的准分子激光束的积分器，以使曝光照度在曝光区域均匀。积分器的特征在于两个主要相对表面中的一个上的多个同心圆形或平行的条形凹槽，使得进入一个主表面的光从另一个主表面散射辐射，使来自光源的准分子激光光线均匀以减少曝光区域中不均匀的曝光照度。

10. 发明申请

US20080193882A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20080193882A1
公开(公告)日：2008-08-14
申请号：US11958661
申请日：2007-12-18
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

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