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121. 发明授权

US6133075A Semiconductor device and method of fabricating the same 失效
公开(公告)号：US6133075A
公开(公告)日：2000-10-17
申请号：US65692
申请日：1998-04-24
申请人： Shunpei Yamazaki , Hideto Ohnuma , Tamae Takano , Hisashi Ohtani
发明人： Shunpei Yamazaki , Hideto Ohnuma , Tamae Takano , Hisashi Ohtani
IPC分类号： G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L21/00
CPC分类号： G02B27/017 , H01L27/1255 , H01L27/1277 , H01L29/66757 , G02B2027/0138 , G02B5/30 , G02F1/13454
摘要： There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

122. 发明授权

US5956581A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5956581A
公开(公告)日：1999-09-21
申请号：US616623
申请日：1996-03-15
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Hideto Ohnuma
IPC分类号： H01L21/20 , H01L21/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/324
CPC分类号： H01L27/1214 , H01L21/3003 , H01L21/2026 , H01L29/66765 , Y10S438/908
摘要： A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜; 通过主要含有氢或氦的气体的等离子体处理所述非晶硅膜; 并向所述非晶硅膜提供能量。

123. 发明授权

US5561081A Method of forming a semiconductor device by activating regions with a laser light 失效
标题翻译：用激光激活区域形成半导体器件的方法
公开(公告)号：US5561081A
公开(公告)日：1996-10-01
申请号：US190846
申请日：1994-02-03
申请人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
发明人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
IPC分类号： H01L21/265 , B23K26/073 , H01L21/268 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/306
CPC分类号： H01L29/66757 , B23K26/0738 , Y10S117/904
摘要： An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.
摘要翻译：描述了在玻璃基板上形成半导体器件的改进方法。该方法包括在玻璃基板上形成半导体膜，通过加热器将半导体膜加热到预定温度，在通过加热步骤将半导体膜加热到预定温度之后将半导体膜暴露于脉冲激光。由于预热步骤而导致的急剧的温度变化导致的热冲击减轻。脉冲激光的宽度大于垂直于长度的横截面时的高度。

124. 发明授权

US09130051B2 Semiconductor device including semiconductor layer over insulating layer and manufacturing method thereof 有权
标题翻译：包括绝缘层上的半导体层的半导体器件及其制造方法
公开(公告)号：US09130051B2
公开(公告)日：2015-09-08
申请号：US13402212
申请日：2012-02-22
申请人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
发明人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
IPC分类号： H01L29/786 , H01L27/12 , H01L21/02
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02675 , H01L21/02691 , H01L27/1281
摘要： A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The TFT of the present invention is characterized by its semiconductor layer where the thickness of the source region or the drain region is larger than that of the channel formation region. Manufacture of the TFT is readily achieved by the formation of an amorphous semiconductor layer on a projection portion and a depression portion, which is followed by subjecting the melting process of the semiconductor layer, resulting in the formation of a crystalline semiconductor layer having different thicknesses. Selective addition of impurity to the thick portion of the semiconductor layer provides a semiconductor layer in which the channel formation region is thinner than the source or drain region.
摘要翻译：示出了具有低亚阈值摆动和抑制导通电流下降的高响应性薄膜晶体管（TFT）的半导体器件及其制造方法。本发明的TFT的特征在于其源极区域或漏极区域的厚度大于沟道形成区域的厚度的半导体层。通过在突起部分和凹陷部分上形成非晶半导体层来容易地实现TFT的制造，随后对半导体层进行熔化处理，形成具有不同厚度的晶体半导体层。选择性地向半导体层的厚部分添加杂质提供了沟道形成区域比源区或漏区更薄的半导体层。

125. 发明授权

US08828844B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US08828844B2
公开(公告)日：2014-09-09
申请号：US12247487
申请日：2008-10-08
申请人： Hideto Ohnuma , Tetsuya Kakehata , Akihisa Shimomura , Shinya Sasagawa , Motomu Kurata
发明人： Hideto Ohnuma , Tetsuya Kakehata , Akihisa Shimomura , Shinya Sasagawa , Motomu Kurata
IPC分类号： H01L21/46 , H01L21/268 , H01L21/3065 , H01L21/84 , H01L21/02 , H01L21/302 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L21/302 , H01L21/3065 , H01L21/84
摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.
摘要翻译：通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻，通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。

126. 发明授权

US08823063B2 SOI substrate, method for manufacturing the same, and semiconductor device 有权
标题翻译： SOI衬底，其制造方法和半导体器件
公开(公告)号：US08823063B2
公开(公告)日：2014-09-02
申请号：US13267024
申请日：2011-10-06
申请人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
发明人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
IPC分类号： H01L29/772 , H01L29/04
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译：提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。提供了使用这种SOI衬底的半导体器件。在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

127. 发明授权

US08658508B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08658508B2
公开(公告)日：2014-02-25
申请号：US13411864
申请日：2012-03-05
申请人： Takeshi Shichi , Junichi Koezuka , Hideto Ohnuma , Shunpei Yamazaki
发明人： Takeshi Shichi , Junichi Koezuka , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/33 , H01L21/8222
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween.
摘要翻译：本发明提供一种制造SOI衬底的方法，即使在非质量分离型离子照射方法为非质子分离型离子照射方法的情况下，通过有利地分离单晶半导体衬底来提高分离后的单晶半导体层的表面的平面性并且在分离之后提高单晶半导体层的表面的平面性以及提高生产量。该方法包括以下步骤：当单晶半导体衬底被冷却以在单晶半导体衬底中形成脆化区域时，通过离子掺杂方法照射具有加速离子的单晶半导体衬底; 将单晶半导体衬底和基底衬底之间插入绝缘层; 并且沿着脆化区域分离单晶半导体衬底，以在基底衬底上形成绝缘层，形成单晶半导体层。

128. 发明授权

US08558241B2 Semiconductor device and fabrication method thereof 有权
公开(公告)号：US08558241B2
公开(公告)日：2013-10-15
申请号：US13609915
申请日：2012-09-11
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： H01L27/14
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

129. 发明授权

US08557676B2 Method of manufacturing SOI substrate and method of manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US08557676B2
公开(公告)日：2013-10-15
申请号：US12986582
申请日：2011-01-07
申请人： Shunpei Yamazaki , Hideto Ohnuma
发明人： Shunpei Yamazaki , Hideto Ohnuma
IPC分类号： H01L21/20
CPC分类号： H01L21/2007 , H01L21/76254
摘要： A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film or the second insulating film is exposed to a plasma atmosphere or an ion atmosphere, and that surface of the first insulating film or the second insulating film is activated; the first substrate and the second substrate are bonded together with the first insulating film and the second insulating film interposed therebetween; a single-crystal silicon film is separated from the first substrate at an interface of the embrittled layer of the first substrate, and a thin film single-crystal silicon film is formed over the second substrate with the first insulating film and the second insulating film interposed therebetween.
摘要翻译：提供了单晶硅的第一基板，其中形成有脆化层，并且其表面上形成有第一绝缘膜; 在第二基板的表面上形成第二绝缘膜; 第一绝缘膜或第二绝缘膜的至少一个表面暴露于等离子体气氛或离子气氛中，并且第一绝缘膜或第二绝缘膜的表面被激活; 第一基板和第二基板与第一绝缘膜和第二绝缘膜接合在一起; 在第一衬底的脆化层的界面处将单晶硅膜与第一衬底分离，并且在第二衬底上形成薄膜单晶硅膜，其中第一绝缘膜和第二绝缘膜插入之间。

130. 发明授权

US08518797B2 Method of making an SOI substrate by using a separation layer with regions of non-uniform concentration 有权
标题翻译：通过使用具有不均匀浓度区域的分离层制造SOI衬底的方法
公开(公告)号：US08518797B2
公开(公告)日：2013-08-27
申请号：US12212990
申请日：2008-09-18
申请人： Hideto Ohnuma , Shunpei Yamazaki
发明人： Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： The method includes steps of adding first ions to a predetermined depth from a main surface of a semiconductor substrate by irradiation of the semiconductor substrate with a planar, linear, or rectangular ion beam, so that a separation layer is formed; adding second ions to part of the separation layer formed in the semiconductor substrate; disposing the main surface of the semiconductor substrate and a main surface of a base substrate to face each other in order to bond a surface of an insulating film and the base substrate; and cleaving the semiconductor substrate using the separation layer as a cleavage plane, so that a single crystal semiconductor layer is formed over the base substrate. The mass number of the second ions is the same as or larger than that of the first ions.
摘要翻译：该方法包括以下步骤：通过用平面，线性或矩形离子束照射半导体衬底，从半导体衬底的主表面加入第一离子至预定深度，从而形成分离层; 向形成在半导体衬底中的分离层的一部分添加第二离子; 将半导体基板的主表面和基底基板的主表面设置为彼此面对以便将绝缘膜和基底的表面粘合; 并使用分离层将半导体衬底切割为解理面，从而在基底衬底上形成单晶半导体层。第二离子的质量数与第一离子的质量数相同或者更大。

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