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111. 发明授权

US3280343A Counting chain consisting of electronic switching units 失效
标题翻译：计数链由电子开关单元组成
公开(公告)号：US3280343A
公开(公告)日：1966-10-18
申请号：US38015964
申请日：1964-07-03
申请人： INT STANDARD ELECTRIC CORP
发明人： ULRICH KUHL
IPC分类号： H03K19/084 , H03K21/00 , H03K23/00
CPC分类号： H03K23/002 , H03K19/084 , H03K21/00

112. 发明授权

US3280333A Radiation sensitive self-powered solid-state circuits 失效
标题翻译：辐射敏感自供电固态电路
公开(公告)号：US3280333A
公开(公告)日：1966-10-18
申请号：US14464961
申请日：1961-10-12
申请人： INT STANDARD ELECTRIC CORP
发明人： ANTHONY HYMAN ROBERT , DERRICK THOMAS ARTHUR
IPC分类号： H01L21/761 , H01L27/02 , H01L27/082 , H01L29/00 , H01L31/02 , H03B7/08 , H03F1/30 , H03F3/04 , H03F3/12
CPC分类号： H03F3/12 , H01L21/761 , H01L27/0214 , H01L27/0229 , H01L27/0826 , H01L29/00 , H01L31/02021 , H03B7/08 , H03F1/302 , H03F3/04 , Y02E10/50 , Y10S136/291

113. 发明授权

US3278714A Supporting frame for printed circuit board 失效
标题翻译：印刷电路板支架
公开(公告)号：US3278714A
公开(公告)日：1966-10-11
申请号：US40919264
申请日：1964-11-05
申请人： INT STANDARD ELECTRIC CORP
发明人： JOHANNES BERNUTZ
IPC分类号： H01H1/40 , H01H1/42 , H01R12/50 , H01R12/70 , H01R12/72 , H01R13/11 , H01R13/115 , H01R13/15 , H01R13/18 , H01R13/20 , H01R13/415 , H01R13/432 , H01R13/506 , H01R13/62 , H01R13/631 , H01R13/64 , H01R13/645 , H01R24/00 , H01R29/00 , H05K1/02
CPC分类号： H01R13/112 , H01H1/403 , H01R12/7005 , H01R12/721 , H01R13/15 , H01R13/20 , H01R13/415 , H01R13/432 , H01R13/506 , H01R13/631 , H01R13/64 , H01R13/645 , H01R29/00 , H01R2107/00

114. 发明授权

US3277453A Apparatus and method for recording and reproducing a plurality of timing tracks 失效
标题翻译：用于记录和再现多个定时轨道的装置和方法
公开(公告)号：US3277453A
公开(公告)日：1966-10-04
申请号：US22079862
申请日：1962-08-31
申请人： INT STANDARD ELECTRIC CORP
发明人： MICHEL HEIDENHEIM RUDOLF
IPC分类号： G04F10/00 , G11B20/16
CPC分类号： G11B20/16 , G04F10/00

115. 发明授权

US3275753A Electronic translator 失效
公开(公告)号：US3275753A
公开(公告)日：1966-09-27
申请号：US24978363
申请日：1963-01-07
申请人： INT STANDARD ELECTRIC CORP
发明人： HENRI BENMUSSA , JEAN CLERC MAURICE
IPC分类号： H04Q3/00 , H04Q3/42
CPC分类号： H04Q3/42 , H04Q3/00

116. 发明授权

US3274339A Time division multiplex transmission systems 失效
公开(公告)号：US3274339A
公开(公告)日：1966-09-20
申请号：US19339562
申请日：1962-05-09
申请人： INT STANDARD ELECTRIC CORP
发明人： JEAN HERRY MICHEL , LE CORRE JEAN PIERRE , RALPHAEL YELLOZ GUY
IPC分类号： H04J3/06 , H04Q11/04
CPC分类号： H04J3/06 , H04J3/0629 , H04Q11/0407

117. 发明授权

US3271632A Method of producing electrical semiconductor devices 失效
标题翻译：电半导体器件的制造方法
公开(公告)号：US3271632A
公开(公告)日：1966-09-06
申请号：US19580562
申请日：1962-05-18
申请人： INT STANDARD ELECTRIC CORP
发明人： JOACHIM HARTMANN HORST
IPC分类号： C30B13/10 , C30B19/00 , H01L21/00 , H01L21/20 , H01L27/102 , H01L29/00
CPC分类号： H01L21/00 , C30B13/10 , C30B19/00 , H01L21/2022 , H01L27/1021 , H01L29/00
摘要： 998,386. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. May 25, 1962 [May 26, 1961], No. 20204/62. Heading H1K. A semi-conductor, e.g. silicon or germanium, device is made by evaporating a layer of amorphous semi-conductor doped with impurities of one conductivity type on a body or layer of the opposite conductivity type and then heating to melt a small area or areas of the layer so that upon recrystallization a PN junction is formed at each area. The body or layer may be cut from a grown crystal, or may be formed by deposition on a cooled substrate to give an amorphous layer which is subsequently crystallized by heating, or on a heated substrate to form a crystalline layer directly. Suitable materials for the substrate are metal, which also forms an electrode, glass, quartz, or ceramic coated with metal by evaporation, or monocrystalline high resistivity semi-conductor. In the latter case the layer may be deposited epitaxially by thermal decomposition of a compound of a semiconductor. Localized heating of the amorphous layer may be produced by bombardment with a beam of electrons. This results in a rapid heating and cooling suitable for producing the abrupt junctions required in tunnel diodes. More diffuse junctions are formed by extending the period of bombardment or by subsequent reheating. The impurities are introduced into the amorphous material prior to or during evaporation. In a typical embodiment, Fig. 2, after deposition of metal 2, semi-conductor 3, and amorphous semi-conductor 4 on glass or quartz substrate 1, area 6, is melted and large area metal contact 7 provided on the recrystallized layer by evaporation. In a similar method to form a diode matrix the amorphous layer is deposited through a mask to form isolated areas in each of which a localized PN junction is formed by scanning with an interrupted electron beam. A transistor configuration is produced by melting two closely spaced areas, or by depositing the amorphous material on both faces of a monocrystalline wafer and melting opposed areas thereof.

118. 发明授权

US3270256A Continuously graded electrode of two metals for semiconductor devices 失效
标题翻译：用于半导体器件的两种金属连续分级电极
公开(公告)号：US3270256A
公开(公告)日：1966-08-30
申请号：US31293063
申请日：1963-10-01
申请人： INT STANDARD ELECTRIC CORP
发明人： DOUGLAS MILLS BERNARD , FRANCIS PAYNE ROLAND
IPC分类号： B23K1/00 , C03C17/40 , C23C14/02 , H01B1/00 , H01L21/00 , H01L21/56 , H01L21/58 , H01L21/60 , H01L23/04 , H01L23/31 , H01L23/485 , H01L23/488 , H01L23/522 , H01L25/16 , H01L49/02 , H01R4/02
CPC分类号： H01L24/49 , B23K1/00 , C03C17/40 , C23C14/02 , C23C14/027 , H01B1/00 , H01L21/00 , H01L21/563 , H01L23/041 , H01L23/3121 , H01L23/485 , H01L23/488 , H01L23/522 , H01L24/05 , H01L24/06 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/83 , H01L25/16 , H01L49/02 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05671 , H01L2224/06181 , H01L2224/45139 , H01L2224/48091 , H01L2224/4847 , H01L2224/4918 , H01L2224/73203 , H01L2224/81801 , H01L2224/8319 , H01L2224/8385 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01021 , H01L2924/01029 , H01L2924/01032 , H01L2924/01042 , H01L2924/01047 , H01L2924/01058 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01R4/02 , H01L2924/01013 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/85399
摘要： 1,023,531. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Oct. 18, 1963 [Oct. 19, 1962], No. 39650/62. Addition to 1,010,111. Heading H1K. Contacts to zones of a planar diffused junction device exposed through apertures in a surface oxide layer comprise bi-metallic films extending over the layer into the apertures. The upper surface of each film consists of a solderable metal and the lower surface of a different metal which adheres well to the oxide. A typical device, a silicon transistor, Fig. 6 (not shown), is formed by successive diffusions through an oxide mask to form base and emitter zones in a high resistivity N-type layer epitaxially grown on a heavily doped N-wafer. After selectively etching to expose areas of these zones contacts are made thereto by vapour depositing aluminium over the entire surface and then etching it from the coated areas. After heating to alloy the aluminium to the silicon a layer grading from chromium or chromium-copper below to gold above, or from manganese to silver is evaporated over the entire surface as described in the parent Specification and then selectively etched to leave strips 11, 12 extending to the emitter and base contacts respectively. Alternatively the strips are obtained directly by evaporation through a mask. The graded layer can also be applied without the intermediary of aluminium if the exposed surface of the base zone is heavily doped beforehand by acceptor diffusion. The back face of the wafer may be friction alloyed to a header, or coated with a graded chromiumgold film and soldered to a header constituting the collector electrode or to a similar graded film on a glass substrate. Alternatively the collector electrode may be formed in the same way as the emitter and base electrodes on the oxide coated surface. The invention is also applicable to planar diodes and solid circuits and to germanium planar devices with silicon oxide masking layers.

119. 发明授权

US3265326A Pneumatic tube system switching points 失效
标题翻译：气动管系统切换点
公开(公告)号：US3265326A
公开(公告)日：1966-08-09
申请号：US37030464
申请日：1964-05-26
申请人： INT STANDARD ELECTRIC CORP
发明人： HORST MACH , HANS-JOACHIM PETER
IPC分类号： B65G51/24 , B65G51/34
CPC分类号： B65G51/34 , B65G51/24

120. 发明授权

US3261239A Method and arrangement for baring electric bibbon cables 失效
标题翻译：裸电缆电缆的方法和布置
公开(公告)号：US3261239A
公开(公告)日：1966-07-19
申请号：US28671963
申请日：1963-06-10
申请人： INT STANDARD ELECTRIC CORP
发明人： HUGO MOONS , DE HOUS PAUL MARIA PIETER
IPC分类号： H01B7/08 , H02G1/12
CPC分类号： H01B7/08 , H02G1/1275 , H02G1/1295 , Y10T83/0581 , Y10T83/4679

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