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111. 发明授权

US06146533A Method of treating wastewater containing chemical substances by use of supercritical fluid and treating apparatus 失效
标题翻译：使用超临界流体和处理装置处理含有化学物质的废水的方法
公开(公告)号：US06146533A
公开(公告)日：2000-11-14
申请号：US280547
申请日：1999-03-30
申请人： Toshihiro Nakai , Yoshio Sato , Nobuyuki Takahashi , Yoshishige Kato
发明人： Toshihiro Nakai , Yoshio Sato , Nobuyuki Takahashi , Yoshishige Kato
IPC分类号： C02F1/58 , B01D3/34 , C02F1/04 , C02F1/74
CPC分类号： B01D3/343 , C02F1/048
摘要： There is disclosed a method and an apparatus, of treating wastewater containing chemical substances, which comprises passing, into a continuous phase of water to be treated that has been formed by supplying raw water from an upper part of a tower, a supercritical fluid, from a lower part of the tower, to the upper part thereof, to bring the water to be treated and the supercritical fluid in countercurrent contact with each other, thereby separating the chemical substances from the water to be treated. These method and apparatus make it possible to treat wastewater containing chemical substances at a medium concentration, for which conventionally an effective physical or chemical treatment method is not found, efficiently without involvement of any secondary pollution.
摘要翻译：公开了一种处理含有化学物质的废水的方法和装置，该方法和设备包括：通过从塔的上部供应原水而形成的待处理水的连续相，超临界流体，塔的下部到其上部，以使待处理的水和超临界流体彼此逆流接触，从而将化学物质与待处理的水分离。这些方法和装置使得可以有效地处理中等浓度的含有化学物质的废水，其中通常没有发现有效的物理或化学处理方法，而不涉及任何二次污染。

112. 发明授权

US6129046A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6129046A
公开(公告)日：2000-10-10
申请号：US795348
申请日：1997-02-04
申请人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
IPC分类号： C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/324 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/4586
摘要： The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.
摘要翻译：本发明提供一种具有改进的块加热器温度分布和提高生产率的基板处理装置。基板处理装置包括具有排气单元的反应器，用于在其中形成用于处理基板的表面的真空环境，设置在反应器中的支撑构件和用于将反应气体引入反应器的气体引入单元，所述基板支撑构件包括一个块加热器。块式加热器具有一个上下放置的上部，中间和下部构件，各个构件的接合表面通过扩散接合连接。加热构件设置在中间构件和下构件之间，并且在中间构件和上构件之间形成吹扫气体通道。

113. 发明授权

US6016765A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US6016765A
公开(公告)日：2000-01-25
申请号：US905767
申请日：1997-08-04
申请人： Yoichiro Numasawa , Shinya Hasegawa , Tsutomu Tsukada , Nobuyuki Takahashi
发明人： Yoichiro Numasawa , Shinya Hasegawa , Tsutomu Tsukada , Nobuyuki Takahashi
IPC分类号： H05H1/46 , C23C16/40 , C23C16/44 , C23C16/50 , C23C16/507 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/402 , C23C16/4401 , C23C16/507 , H01J37/321 , H01J37/32467
摘要： A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.
摘要翻译：等离子体处理装置配备有反应器，该反应器具有基座12，将反应气体输送到反应器内部的反应气体输送机构，泵出反应器内部的泵送机构24，生成机制。反应器由金属制成，等离子体产生机构包括产生感应电场的至少单绕组线圈16，并且线圈建立在反应器内并围绕等离子体产生空间围绕电介质部分 15和17。

114. 发明授权

US6013362A Soundproof material 失效
标题翻译：隔音材料
公开(公告)号：US6013362A
公开(公告)日：2000-01-11
申请号：US22385
申请日：1998-02-12
申请人： Nobuyuki Takahashi , Manabu Matsunaga , Kazumasa Tanaka , Yasunori Sugihara
发明人： Nobuyuki Takahashi , Manabu Matsunaga , Kazumasa Tanaka , Yasunori Sugihara
IPC分类号： B32B5/18 , F16F1/36 , F16F1/37 , G10K11/16 , G10K11/162 , G11B33/08 , G11B23/03 , H02K5/24
CPC分类号： F16F1/3605 , F16F1/37 , G11B33/08 , Y10S360/90 , Y10T428/249953
摘要： A soundproof material comprising a porous member having an air permeation amount based on the pressure difference of 2.039.times.1/10.sup.4 mmH.sub.2 O of from 1.times.1/10.sup.10 to 2.times.1/10.sup.2 cc/cm.sup.2 /second, and having a compressibility.
摘要翻译：一种隔音材料，其特征在于，具有空气透过量为2.039×1 / 104mmH 2 O的空气透过量为1×10 1/10 10〜2×10 2 cc / cm 2 /秒的多孔构件，具有压缩性。

115. 发明授权

US5968327A Ionizing sputter device using a coil shield 失效
标题翻译：使用线圈屏蔽的电离溅射装置
公开(公告)号：US5968327A
公开(公告)日：1999-10-19
申请号：US22623
申请日：1998-02-12
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/34 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： H01J37/321 , H01J37/3408
摘要： A coil shield 64 that blocks the arrival at a substrate 50 of the material released by sputtering is provided to a high frequency coil 61 provided such that it surrounds the ionization space between the target 2 and the substrate holder 5. The coil shield 64 is made of metal, and is grounded, which prevents plasma formation in unnecessary places. The coil shield 64 is hollow, gas blowing holes are uniformly formed over the inner surface facing the ionization space, and the gas is flown toward the ionization space.
摘要翻译：提供了阻挡到通过溅射释放的材料到达基板50的线圈屏蔽件64，其设置成使其围绕靶材2和基板保持件5之间的电离空间。高频线圈61被制成的金属，并且接地，这防止在不必要的地方形成等离子体。线圈护罩64是中空的，气体吹出孔均匀地形成在面向电离空间的内表面上，并且气体朝向电离空间流动。

116. 发明授权

US5925227A Multichamber sputtering apparatus 失效
标题翻译：多层溅射装置
公开(公告)号：US5925227A
公开(公告)日：1999-07-20
申请号：US859077
申请日：1997-05-20
申请人： Masahiko Kobayashi , Masahito Ishihara , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Masahito Ishihara , Nobuyuki Takahashi
IPC分类号： C23C14/34 , C23C14/56 , H01L21/203 , H01L21/677
CPC分类号： C23C14/568
摘要： A multichamber sputtering apparatus which is used for manufacturing a semiconductor device and the like. In the apparatus, a plurality of sputter chambers and a degas chamber are airtightly connected to and arranged around a center transfer chamber, and processes including sputtering are continuously conducted in a vacuum. A plurality of heat stages are disposed in the degas chamber so that a plurality of substrates are simultaneously heated. In each heat stage, as required, a heating gas introducing unit for introducing a heating gas with causing the heating gas to make contact with the rear face of the substrate, a pressing mechanism which presses the substrate against the heat stage so as to enhance the surface contact between the heat stage and the substrate, or an electrostatic chucking mechanism is disposed.
摘要翻译：用于制造半导体器件等的多层溅射装置。在该装置中，多个溅射室和脱气室与中心传送室气密连接并布置，并且包括溅射在内的处理在真空中连续进行。多个加热台设置在脱气室中，使多个基板同时加热。在每个加热阶段，根据需要，加热气体引入单元，用于引入加热气体，使加热气体与基板的背面接触;按压机构，将基板压靠在加热台上，以增强设置热台和基板之间的表面接触，或静电吸附机构。

117. 发明授权

US5759293A Decarburization-annealed steel strip as an intermediate material for grain-oriented electrical steel strip 失效
标题翻译：脱碳退火钢带作为晶粒取向电工钢带的中间材料
公开(公告)号：US5759293A
公开(公告)日：1998-06-02
申请号：US554531
申请日：1995-11-06
申请人： Nobuyuki Takahashi , Yasunari Yoshitomi , Tadashi Nakayama , Yoshiyuki Ushigami
发明人： Nobuyuki Takahashi , Yasunari Yoshitomi , Tadashi Nakayama , Yoshiyuki Ushigami
IPC分类号： C21D3/04 , C21D8/12 , H01F1/04
CPC分类号： C21D8/1255 , C21D3/04 , C21D8/1222 , C21D8/1233 , C21D8/1272
摘要： A decarburization-annealed steel strip as an intermediate material for grain-oriented electrical steel strip having good secondary recrystallization and excellent electrical properties is provided by causing a steel strip to possess a micro-structure in which the primary recrystallization grains have an average diameter d of not less than 15 .mu.m and a coefficient of diameter deviation .sigma.* of not more than 0.6.
摘要翻译：通过使钢带具有其中一次再结晶晶粒具有平均直径+ E的微观结构，提供具有良好的二次再结晶和优异的电特性的用于取向电工钢带的中间材料的脱碳退火钢带，ovs d + EE不小于15μm，直径偏差系数σ*不大于0.6。

118. 发明授权

US5650406A Adamantane derivative, process for producing the same, and use thereof 失效
标题翻译：金刚烷衍生物，其制备方法及其用途
公开(公告)号：US5650406A
公开(公告)日：1997-07-22
申请号：US702453
申请日：1996-10-08
申请人： Nobuyuki Takahashi , Daisuke Mochizuki
发明人： Nobuyuki Takahashi , Daisuke Mochizuki
IPC分类号： C07D295/02 , C07D295/03 , C07D295/073 , C07D295/096 , C07D487/08 , A61K31/55 , C07D223/14
CPC分类号： C07D295/03 , C07D295/073 , C07D295/096 , C07D487/08 , C07C2103/74
摘要： A compound represented by general formula (1) or an innocuous salt thereof, a process for producing the same, and a schizophrenia remedy containing the same as the active ingredient (wherein the nitrogeneous ring B represents 3-azabicyclo [3.2.2] nonan-3-yl or 4-azatricyclo [4.3.1.1.sup.3.8 ] undecan-4-yl; and R represents hydrogen, lower alkyl, lower alkoxy, hydroxy or halogen). The above compound and salt have a high affinity for sigma-binding sites and are useful as an antischizophrenic drug.
摘要翻译： PCT No.PCT / JP95 / 00740 Sec。 371日期1996年10月8日第 102（e）日期1996年10月8日PCT提交1995年4月17日PCT公布。 WO95 / 28390 PCT公开号日期：1995年10月26日<1>（1）由通式（1）表示的化合物或其无毒盐，其制备方法和含有该活性成分的精神分裂症药物（其中，所述硝化环 B表示3-氮杂双环[3.2.2]壬烷-3-基或4-氮杂三环[4.3.1.13.8]十一烷-4-基; R表示氢，低级烷基，低级烷氧基，羟基或卤素。上述化合物和盐对σ-结合位点具有高亲和力，可用作抗精神分裂症药物。

119. 发明授权

US5593365A Control system for automatic transmission 失效
标题翻译：自动变速器控制系统
公开(公告)号：US5593365A
公开(公告)日：1997-01-14
申请号：US509456
申请日：1995-07-31
申请人： Atsushi Tabata , Nobuyuki Takahashi , Takashi Ohta , Yasuo Hojo , Shinji Kasuga , Masahiro Hayabuchi , Masahiko Ando , Kazumasa Tsukamoto , Akira Fukatsu
发明人： Atsushi Tabata , Nobuyuki Takahashi , Takashi Ohta , Yasuo Hojo , Shinji Kasuga , Masahiro Hayabuchi , Masahiko Ando , Kazumasa Tsukamoto , Akira Fukatsu
IPC分类号： F16H61/02 , F16H61/21 , F16H61/70 , B60K41/06 , F16H61/26 , F16H63/00
CPC分类号： F16H61/702 , F16H2061/026 , F16H2061/1244 , F16H2061/1268 , F16H2061/1284 , F16H2300/18 , F16H61/21 , F16H61/686 , Y10S477/908 , Y10T477/691
摘要： A control system for an automatic transmission including a main transmission unit for setting a reverse stage and a plurality of forward stages and an auxiliary transmission unit connected in series to the main transmission unit and capable to be changed between two higher and lower stages. The control system comprises: a solenoid valve for outputting a signal pressure when at least the reverse stage and a predetermined one of the forward stages are to be set; a change-over valve for changing the signal pressure selectively into a signal pressure for setting the auxiliary transmission unit to a high gear stage and a signal pressure for controlling an engine braking state; and an engine braking control valve for controlling an engine braking frictional element at the predetermined forward stage into a released state in response to the signal pressure coming from the change-over valve. The acting state of the solenoid valve when the reverse stage is to be set and the acting state of the solenoid valve when the predetermined forward stage for making the engine braking ineffective is to be set are identical to each other.
摘要翻译：一种用于自动变速器的控制系统，包括用于设置反向级的主传动单元和多个前级，以及与主传动单元串联连接并能够在两个较高和较低级之间变化的辅助传动单元。所述控制系统包括：电磁阀，用于在至少所述反向级和所述前级中的预定的一级被设定时输出信号压; 用于将信号压力选择性地改变成用于将辅助变速器单元设置到高档位的信号压力和用于控制发动机制动状态的信号压力的换向阀; 以及发动机制动控制阀，用于响应于来自转换阀的信号压力，将预定的前级的发动机制动摩擦元件控制到释放状态。要设定倒档时的电磁阀的作用状态和要使发动机制动无效的规定的前进阶段要被设定时的电磁阀的动作状态相同。

120. 发明授权

US5534072A Integrated module multi-chamber CVD processing system and its method for processing subtrates 失效
标题翻译：集成模块多室CVD处理系统及其处理方法
公开(公告)号：US5534072A
公开(公告)日：1996-07-09
申请号：US77687
申请日：1993-06-16
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.
摘要翻译：在用于沉积覆盖钨膜的CVD处理系统中，当衬底夹具与衬底分离时，形成不同的阴影，而不会发生任何微剥离，以防止任何覆盖的钨沉积在SiO 2上，从而减少细尘粒子。一种用于沉积覆盖钨膜的CVD处理系统，包括基座（4）; 环形卡盘（9），用于将基板（3）的周边部分固定在基座上; 用于供应反应性气体的反应气体供应机构（17,18和19）以及用于排出未反应气体等的排气机构（2），其中：所述环卡盘具有与所述基板的周边部分接触的至少三点接触构件（10）点接触构件设置在环卡盘的内周的外侧的位置; 在环卡盘和基板之间的点接触构件处形成间隙（11）; 并且提供吹扫气体供给机构（20和21）以吹扫通过间隙的吹扫气体，以防止反应性气体进入间隙（11）。将间隙尺寸与吹扫气体的流量的比率设定为最佳值，以满足薄膜的周边部分的位置与环的内周的位置一致的条件卡盘

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