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111. 发明授权

US08153529B2 Method for selective deposition and devices 有权
标题翻译：选择性沉积和器件的方法
公开(公告)号：US08153529B2
公开(公告)日：2012-04-10
申请号：US12622506
申请日：2009-11-20
申请人： David H. Levy
发明人： David H. Levy
IPC分类号： H01L21/302
CPC分类号： C23C16/04 , C23C16/45551 , C23C16/545 , H01L21/02554 , H01L21/02642 , H01L2924/0002 , H01L2924/00
摘要： A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译：用于形成图案化薄膜的诸如原子层沉积方法的化学气相沉积方法包括将沉积抑制剂材料施加到基底上。沉积抑制剂材料是亲水性聚合物，其是pKa为5或更小的中和酸，其中至少90％的酸基被中和。沉积抑制剂材料被图案化同时或随后被应用于基底，以提供有效地不具有沉积抑制剂材料的基底的选定区域。薄膜仅基本沉积在不具有沉积抑制剂材料的基底的选定区域中。

112. 发明授权

US08017183B2 Organosiloxane materials for selective area deposition of inorganic materials 有权
标题翻译：有机硅氧烷材料用于无机材料的选择性区域沉积
公开(公告)号：US08017183B2
公开(公告)日：2011-09-13
申请号：US11861705
申请日：2007-09-26
申请人： Cheng Yang , Lyn M. Irving , David H. Levy , Peter J. Cowdery-Corvan , Diane C. Freeman
发明人： Cheng Yang , Lyn M. Irving , David H. Levy , Peter J. Cowdery-Corvan , Diane C. Freeman
IPC分类号： C23C16/00
CPC分类号： C23C16/042 , C23C16/45551 , C23C16/545
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译：一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机硅氧烷化合物; 以及在施加沉积抑制剂材料之后或同时施加沉积抑制剂材料以图案化沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。

113. 发明申请

US20110121283A1 METHOD FOR SELECTIVE DEPOSITION AND DEVICES 有权
标题翻译：选择性沉积和设备的方法
公开(公告)号：US20110121283A1
公开(公告)日：2011-05-26
申请号：US12622506
申请日：2009-11-20
申请人： David H. Levy
发明人： David H. Levy
IPC分类号： H01L29/12 , C23C16/22 , C23C16/30 , H01L21/04 , C23C16/44
CPC分类号： C23C16/04 , C23C16/45551 , C23C16/545 , H01L21/02554 , H01L21/02642 , H01L2924/0002 , H01L2924/00
摘要： A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译：用于形成图案化薄膜的诸如原子层沉积方法的化学气相沉积方法包括将沉积抑制剂材料施加到基底上。沉积抑制剂材料是亲水性聚合物，其是pKa为5或更小的中和酸，其中至少90％的酸基被中和。沉积抑制剂材料被图案化同时或随后被应用于基底，以提供有效地不具有沉积抑制剂材料的基底的选定区域。薄膜仅基本沉积在不具有沉积抑制剂材料的基底的选定区域中。

114. 发明申请

US20110120542A1 METHOD FOR SELECTIVE DEPOSITION AND DEVICES 有权
标题翻译：选择性沉积和设备的方法
公开(公告)号：US20110120542A1
公开(公告)日：2011-05-26
申请号：US12622519
申请日：2009-11-20
申请人： David H. Levy
发明人： David H. Levy
IPC分类号： H01L31/0216 , C23C16/44 , C23C16/06 , H05K1/00
CPC分类号： C23C16/45551 , C23C16/04 , H01L21/02521 , H01L21/02554 , H01L21/02639
摘要： A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic poly(vinyl alcohol) having a degree of hydrolysis of less than 95%. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译：用于形成图案化薄膜的诸如原子层沉积方法的化学气相沉积方法包括将沉积抑制剂材料施加到基底上。沉积抑制剂材料是水解度小于95％的亲水性聚（乙烯醇）。沉积抑制剂材料被图案化同时或随后被应用于基底，以提供有效地不具有沉积抑制剂材料的基底的选定区域。薄膜仅基本沉积在不具有沉积抑制剂材料的基底的选定区域中。

115. 发明授权

US07851380B2 Process for atomic layer deposition 有权
标题翻译：原子层沉积工艺
公开(公告)号：US07851380B2
公开(公告)日：2010-12-14
申请号：US11861491
申请日：2007-09-26
申请人： Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
发明人： Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
IPC分类号： H01L21/31
CPC分类号： H01L27/1259 , B33Y80/00 , C23C16/407 , C23C16/45551 , C23C16/45595 , C23C16/545 , H01L27/1214 , H01L27/1225
摘要： The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
摘要翻译：本发明涉及薄膜电子元件和薄膜晶体管，环境屏障层，电容器，绝缘子和总线线路的制造方法，其中大部分或全部层通过大气原子层沉积工艺制成。

116. 发明申请

US20090081826A1 PROCESS FOR MAKING DOPED ZINC OXIDE 有权
标题翻译：制造掺杂氧化锌的方法
公开(公告)号：US20090081826A1
公开(公告)日：2009-03-26
申请号：US11861455
申请日：2007-09-26
申请人： Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
发明人： Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
IPC分类号： H01L21/36
CPC分类号： H01L21/02576 , B33Y80/00 , C23C16/407 , C23C16/45504 , C23C16/45544 , C23C16/45551 , C23C16/45574 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要： The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.
摘要翻译：本发明涉及一种制造用于晶体管的氧化锌基薄膜半导体的方法，其包括在衬底上的薄膜沉积，包括提供多种包含第一，第二和第三气态材料的气态材料，其中第一气体材料是含锌挥发性材料，第二气态材料与其反应，使得当第一或第二气态材料之一位于基材表面上时，第一或第二气态材料中的另一种将反应沉积衬底上的一层材料，其中所述第三气态材料是惰性的，并且其中将挥发性含铟化合物引入到所述第一反应性气态材料或补充气态材料中。

117. 发明申请

US20080303037A1 METHODS OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS AND TRANSISTORS MADE THEREBY 审中-公开
标题翻译：制备含有氧化锌基半导体材料和晶体管的薄膜晶体管的方法
公开(公告)号：US20080303037A1
公开(公告)日：2008-12-11
申请号：US11757578
申请日：2007-06-04
申请人： Lyn M. Irving , David H. Levy , Andrea C. Childs
发明人： Lyn M. Irving , David H. Levy , Andrea C. Childs
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L29/7869 , B82Y10/00 , H01L27/1225 , H01L27/1292
摘要： A method of making a thin film transistor comprising a thin film semiconductor element comprised of a transparent zinc-oxide-based semiconductor material, wherein spaced apart first and second contacts in contact with said material are positioned on either side of a channel in the thin film semiconductor element such that the elongated sides of the channel are aligned with an underlying gate structure. The method can be accomplished while maintaining the substrate temperature at no more than 300° C. during fabrication.
摘要翻译：一种制造薄膜晶体管的方法，其包括由透明氧化锌基半导体材料构成的薄膜半导体元件，其中与所述材料接触的间隔开的第一和第二触点位于薄膜中的沟道的任一侧上半导体元件，使得沟道的细长侧与下面的栅极结构对准。该方法可以在制造期间将基板温度保持在不超过300℃的情况下实现。

118. 发明授权

US07402506B2 Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby 有权
标题翻译：制造包含氧化锌基半导体材料的薄膜晶体管和由此制成的晶体管的方法
公开(公告)号：US07402506B2
公开(公告)日：2008-07-22
申请号：US11156143
申请日：2005-06-16
申请人： David H. Levy , Andrea C. Scuderi , Lyn M. Irving
发明人： David H. Levy , Andrea C. Scuderi , Lyn M. Irving
IPC分类号： H01L21/20
CPC分类号： H01L29/7869 , B82Y10/00 , H01L21/02554 , H01L21/02579 , H01L21/02601 , H01L21/02628 , Y10S977/811 , Y10S977/938
摘要： A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
摘要翻译：薄膜晶体管包括含氧化锌的半导体材料。这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。进一步公开了一种制造薄膜晶体管器件的方法，其中在制造期间衬底温度不超过300℃。

119. 发明授权

US07126498B2 Keypad construction 有权
公开(公告)号：US07126498B2
公开(公告)日：2006-10-24
申请号：US10374412
申请日：2003-02-26
申请人： David H. Levy
发明人： David H. Levy
IPC分类号： H03K17/94
CPC分类号： H01H13/702 , H01H2209/074 , H01H2215/008 , H01H2215/036 , H01H2217/006 , H01H2217/018 , H01H2217/036 , H01H2221/002 , H01H2221/05 , H01H2229/004
摘要： An IACK keypad with independent key regions arranged in an array of multiple rows and columns, and combination key regions defined between rows and columns of the array of independent key regions. A trace matrix underlying the keymat either includes, in addition to normally isolated column traces and row traces underlying the independent key regions, trace extensions extending from the row and column traces to underlie the combination key regions, or additional row and column traces underlying the combination key regions and tied to other row and column traces. The trace extensions extend to within a contact region of an opposed electrical contact, such as on a snap dome, beneath the combination key region. Independent and combination key snap domes are constructed to insure singular tactile feedback during combination key operation.

120. 发明授权

US07112398B2 Imaging element containing a blocked photographically useful compound 失效
标题翻译：成像元件含有封闭的有用的化合物
公开(公告)号：US07112398B2
公开(公告)日：2006-09-26
申请号：US10755069
申请日：2004-01-09
申请人： Wojciech K. Slusarek , Xiqiang Yang , Mark E. Irving , David H. Levy , Jared B. Mooberry , James J. Seifert , James H. Reynolds , Lyn M. Irving
发明人： Wojciech K. Slusarek , Xiqiang Yang , Mark E. Irving , David H. Levy , Jared B. Mooberry , James J. Seifert , James H. Reynolds , Lyn M. Irving
IPC分类号： G03C5/16 , G03C11/00
CPC分类号： G03C7/30511 , G03C1/42 , G03C1/43 , G03C1/49809 , G03C1/49827 , G03C1/49845 , G03C7/30541 , G03C7/39236 , G03C7/4136 , Y10S430/156 , Y10S430/16 , Y10S430/165
摘要： This invention relates to an imaging element comprising an imaging layer having associated therewith a compound of Structure I: wherein: the substituents are as defined in the application.
摘要翻译：本发明涉及一种成像元件，其包括具有结构I的化合物的成像层：其中：取代基如本申请中所定义。

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