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    • 111. 发明申请
    • WAFER DIVIDING METHOD USING LASER BEAM WITH AN ANNULAR SPOT
    • 使用激光束与环形点的波浪分割方法
    • US20090017600A1
    • 2009-01-15
    • US12140914
    • 2008-06-17
    • Naotoshi KiriharaKoji YamaguchiYukio Morishige
    • Naotoshi KiriharaKoji YamaguchiYukio Morishige
    • H01L21/304
    • H01L21/78
    • In a wafer dividing method of dividing a wafer into individual devices, the wafer being sectioned by streets to form the devices each made of a laminated body in which an insulating film and a function film are laminated on a front surface of a semiconductor substrate, the method includes a laser processing groove forming step for forming a laser processing groove on the laminated body so as to reach the semiconductor substrate by applying a laser beam formed with an annular spot to the laminated body side of the wafer along the street, the annular spot having an outer diameter larger than a width of a cutting blade and smaller than a width of the street; and a cutting step for allowing a cutting blade to cut the semiconductor substrate of the semiconductor wafer along the laser processing groove formed at the street.
    • 在将晶片分割为各个装置的晶片分割方法中,晶片被街道划分以形成由半导体衬底的前表面上层叠有绝缘膜和功能膜的层叠体构成的器件, 方法包括激光处理槽形成步骤,用于在层叠体上形成激光加工槽,以便通过沿着街道向晶片的层叠体侧施加形成有环形斑点的激光束到达半导体基板,环形点 其外径大于切割刀片的宽度并且小于所述街道的宽度; 以及切割步骤,用于允许切割刀沿着形成在街道处的激光加工槽切割半导体晶片的半导体衬底。
    • 115. 发明授权
    • Process cartridge and image forming apparatus
    • 处理盒和成像设备
    • US07194225B2
    • 2007-03-20
    • US11094242
    • 2005-03-31
    • Koji Yamaguchi
    • Koji Yamaguchi
    • G03G21/16
    • G03G21/1825G03G21/185G03G21/1857G03G2221/1853G03G2221/1861
    • A process cartridge detachably mountable to a main assembly of an electrophotographic image forming apparatus, includes an electrophotographic photosensitive drum, a developing roller for developing a latent image formed on the drum while in contact with the drum, a drum unit supporting the drum, a developing unit supporting the developing roller and movable with the drum unit between contact and spaced apart positions in which the developing roller and the drum contact or are spaced from each other, a drum driving force receiving portion, a movable member to move the developing unit between the contact position and the spaced position, and a movable member driving force receiving portion provided for receiving, from the main assembly, a movable member driving force for moving the movable member when the process cartridge is mounted in the main assembly.
    • 可拆卸地安装到电子照相图像形成装置的主组件的处理盒包括电子照相感光鼓,用于在与滚筒接触的同时使形成在鼓上的潜像显影的显影辊,支撑滚筒的鼓单元,显影辊 支撑显影辊的单元,并且可与滚筒单元一起移动,其中触点间隔开的位置和显影辊和滚筒接触处彼此间隔开;滚筒驱动力接收部分,可移动部件,用于将显影单元移动到触点 以及可动构件驱动力接收部,其设置成用于当主处理盒安装在主组件中时从主组件接收用于使可动构件移动的可动构件驱动力。
    • 117. 发明申请
    • Semiconductor substrate and thin processing method for semiconductor substrate
    • 半导体衬底和半导体衬底的薄加工方法
    • US20050275092A1
    • 2005-12-15
    • US11120108
    • 2005-05-02
    • Koji Yamaguchi
    • Koji Yamaguchi
    • C23C30/00H01L21/02H01L21/304H01L21/306H01L21/48H01L21/68H01L23/48
    • H01L21/6835H01L21/304H01L21/30604H01L2221/6834H01L2924/16315H01L2924/3025
    • A semiconductor substrate having a first substrate surface which includes a device area in which semiconductor devices are formed and a substrate peripheral portion which does not overlap with the device area. A concavo-convex portion is formed in the substrate peripheral portion. Preferably, a concavo-convex portion is formed in a side portion which adjoins the peripheral portion. The concavo-convex portion formed in the substrate peripheral portion or the side portion may be formed by a method such as dry etching, wet etching, mechanical grinding, electrolytic plating, nonelectrolytic plating, or patterning using one of a resin material and a metal material. A thin processing method includes forming the device area; forming the concavo-convex portion in the substrate peripheral portion; adhering the first substrate surface to a support; and grinding a second substrate surface of the semiconductor substrate, which is opposite with the first substrate surface.
    • 具有第一衬底表面的半导体衬底,其包括其中形成半导体器件的器件区域和不与器件区域重叠的衬底周边部分。 在基板周边部形成凹凸部。 优选地,在邻接周边部分的侧部中形成凹凸部。 形成在基板周边部分或侧面部分中的凹凸部分可以通过诸如干蚀刻,湿蚀刻,机械研磨,电解电镀,非电解电镀或使用树脂材料和金属材料之一的图案来形成 。 薄加工方法包括形成装置区域; 在所述基板周边部中形成所述凹凸部; 将第一衬底表面粘附到支撑件上; 以及研磨与所述第一衬底表面相对的所述半导体衬底的第二衬底表面。