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111. 发明授权

US07217649B2 System and method for stress free conductor removal 失效
标题翻译：无应力导体去除的系统和方法
公开(公告)号：US07217649B2
公开(公告)日：2007-05-15
申请号：US10769522
申请日：2004-01-30
申请人： Andrew D. Bailey, III , Shrikant P. Lohokare
发明人： Andrew D. Bailey, III , Shrikant P. Lohokare
IPC分类号： H01L21/4763
CPC分类号： H01L21/67051 , H01J37/32522 , H01J2237/022 , H01L21/31116 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67034 , H01L21/6708 , H01L21/76819 , H01L21/7684
摘要： A system and method for forming a semiconductor in a dual damascene structure including receiving a patterned semiconductor substrate. The semiconductor substrate having a first conductive interconnect material filling multiple features in the pattern. The first conductive interconnect material having an overburden portion. The over burden portion is planarized. The over burden portion is substantially entirely removed in the planarizing process. A mask layer is reduced and a subsequent dielectric layer is formed on the planarized over burden portion. A mask is formed on the subsequent dielectric layer. One or more features are formed in the subsequent dielectric layer and the features are filled with a second conductive interconnect material.
摘要翻译：一种用于在双镶嵌结构中形成半导体的系统和方法，包括接收图案化的半导体衬底。半导体衬底具有填充图案中的多个特征的第一导电互连材料。第一导电互连材料具有覆盖层部分。过度负载部分被平坦化。在平坦化处理中基本上完全去除过度负担部分。掩模层被还原，并且在平坦化的过度部分上形成随后的介电层。在随后的介电层上形成掩模。在随后的介电层中形成一个或多个特征，并且特征填充有第二导电互连材料。

112. 发明授权

US07173418B2 Methods and apparatus for optimizing an electrical response to a set of conductive layers on a substrate 有权
标题翻译：用于优化对衬底上的一组导电层的电响应的方法和装置
公开(公告)号：US07173418B2
公开(公告)日：2007-02-06
申请号：US11173708
申请日：2005-06-30
申请人： Andrew D. Bailey, III
发明人： Andrew D. Bailey, III
IPC分类号： G01B7/06 , G01R33/12
CPC分类号： G01B7/105
摘要： A method of determining a first thickness of a first conductive layer formed of a first conductive material on a target substrate, the target substrate further having a second conductive layer formed of a second conductive material different from the first conductive material, is disclosed. The method includes positioning a first eddy current sensor at a given position relative to the target substrate, the first eddy current sensor being in a spaced-apart relationship with respect to the target substrate when positioned at the given position. The method also includes measuring, using the first eddy current sensor while the first eddy current sensor is positioned at the give position, a first set of electrical responses that includes at least one of a first voltage measurement and a first current measurement, the measuring the first set of electrical responses being performed at a first target substrate temperature. The method further includes measuring, using the first eddy current sensor while the first eddy current sensor is positioned at the given position, a second set of electrical responses that includes at least one of a second voltage measurement and a second current measurement, the measuring the second set of electrical responses being performed at a second target substrate temperature different from the first target substrate temperature. The method also includes calculating a third set of electrical responses using at least the first set of electrical responses and the second set of electrical responses, and a first temperature coefficient of the first conductive layer, the third set of electrical responses representing responses substantially attributable to the first conductive layer; and determining the first thickness from the third set of electrical responses.
摘要翻译：公开了一种确定由目标衬底上的第一导电材料形成的第一导电层的第一厚度的方法，所述目标衬底还具有由不同于所述第一导电材料的第二导电材料形成的第二导电层。该方法包括将第一涡流传感器定位在相对于目标衬底的给定位置处，当定位在给定位置时，第一涡流传感器相对于目标衬底处于间隔开的关系。该方法还包括在第一涡流传感器位于给定位置时测量使用第一涡流传感器的第一组电响应，其包括第一电压测量和第一电流测量中的至少一个，测量在第一目标衬底温度下执行第一组电响应。该方法还包括在第一涡流传感器位于给定位置时使用第一涡流传感器来测量包括第二电压测量和第二电流测量中的至少一个的第二组电响应，在与第一目标衬底温度不同的第二目标衬底温度下执行第二组电响应。该方法还包括使用至少第一组电响应和第二组电响应来计算第三组电响应，以及第一导电层的第一温度系数，第三组电响应表示基本归因于第一导电层; 以及从所述第三组电响应确定所述第一厚度。

113. 发明授权

US07067034B2 Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma 有权
标题翻译：用于等离子体形成内磁桶以控制等离子体体积的方法和装置
公开(公告)号：US07067034B2
公开(公告)日：2006-06-27
申请号：US09536347
申请日：2000-03-27
申请人： Andrew D. Bailey, III
发明人： Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32688
摘要： A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed inside of the chamber. The magnetic array has a plurality of magnetic elements that are disposed around a plasma region within the process chamber.
摘要翻译：用于在处理处理室内处理衬底的同时控制等离子体的体积的等离子体限制装置包括其中等离子体都被点燃并持续进行处理的室。腔室至少部分地由壁限定，并且还包括等离子体限制装置。等离子体限制装置包括设置在腔室内部的磁阵列。磁性阵列具有多个磁性元件，其设置在处理室内的等离子体区域周围。

114. 发明授权

US06873112B2 Method for producing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06873112B2
公开(公告)日：2005-03-29
申请号：US10779187
申请日：2004-02-13
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01J37/32 , H01Q1/36 , H01Q7/00 , H05B31/26
CPC分类号： H01J37/32467 , H01J37/321 , H01Q1/36 , H01Q7/00
摘要： The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.
摘要翻译：本发明提供一种用于处理衬底的方法。将基板放置在室中，其中室包括在室内的基板保持器和形成室的侧面的介电窗口。气体被提供到腔室中。天线用于产生方位角对称电场。使用方位角对称电场从气体形成大致方位对称的等离子体。在衬底的表面上产生基本均匀的加工速率。

115. 发明授权

US06821899B2 System, method and apparatus for improved local dual-damascene planarization 失效
标题翻译：用于改进局部双镶嵌平面化的系统，方法和装置
公开(公告)号：US06821899B2
公开(公告)日：2004-11-23
申请号：US10390520
申请日：2003-03-14
申请人： Shrikant P. Lohokare , Andrew D. Bailey, III , David Hemker , Joel M. Cook
发明人： Shrikant P. Lohokare , Andrew D. Bailey, III , David Hemker , Joel M. Cook
IPC分类号： H01L21311
CPC分类号： H01L21/32135 , H01L21/32115 , H01L21/32136 , H01L21/7684
摘要： A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed on the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
摘要翻译：用于平坦化图案化半导体衬底的系统和方法包括接收图案化的半导体衬底。图案化半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。覆盖层部分包括局部不均匀性。在覆盖层部分上形成附加层。附加层和覆盖层部分被平坦化。平坦化工艺基本上完全除去附加层。

116. 发明授权

US06744213B2 Antenna for producing uniform process rates 有权
标题翻译：用于产生均匀加工速率的天线
公开(公告)号：US06744213B2
公开(公告)日：2004-06-01
申请号：US10374868
申请日：2003-02-24
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01J724
CPC分类号： H01J37/32467 , H01J37/321 , H01Q1/36 , H01Q7/00
摘要： An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.
摘要翻译：一种用于通过窗口在处理室内产生电场的天线装置。通常，天线装置包括外环，包括围绕天线轴设置的第一外环转向，内环，包括围绕天线轴设置的第一内环转，其中内环比天线轴更靠近天线轴外环是在每个方位角方向上的天线轴线，以及径向连接器将外环径向电连接到内环，其中径向连接器与窗口放置很大距离。

117. 发明授权

US06322661B1 Method and apparatus for controlling the volume of a plasma 有权
标题翻译：用于控制等离子体体积的方法和装置
公开(公告)号：US06322661B1
公开(公告)日：2001-11-27
申请号：US09439759
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Nicolas Bright
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Nicolas Bright
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/32688
摘要： A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.
摘要翻译：公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。该装置包括具有多个第一磁性元件的第一磁性桶。第一磁性元件被配置用于在处理室内产生第一磁场。该装置还包括具有多个第二磁性元件的第二磁性桶。第二磁性元件构造成用于在处理室内产生第二磁场。第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

118. 发明授权

US09184028B2 Dual plasma volume processing apparatus for neutral/ion flux control 有权
标题翻译：用于中性/离子通量控制的双等离子体体积处理装置
公开(公告)号：US09184028B2
公开(公告)日：2015-11-10
申请号：US12850559
申请日：2010-08-04
申请人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译：半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

119. 发明授权

US08764907B2 Servicing a plasma processing system with a robot 有权
标题翻译：用机器人维修等离子体处理系统
公开(公告)号：US08764907B2
公开(公告)日：2014-07-01
申请号：US12569674
申请日：2009-09-29
申请人： Andrew D. Bailey, III
发明人： Andrew D. Bailey, III
IPC分类号： B23P6/00 , B23P19/04
CPC分类号： B25J5/00 , B08B1/00 , B08B9/00 , H01J37/32743 , H01J37/32862 , H01L21/67751 , Y10T29/49723
摘要： A method for servicing a plasma processing system. The plasma processing system may include a plasma chamber. The plasma chamber may include a top piece and a bottom piece, wherein the top piece may be disposed above the bottom piece. The method may include using a robot device to control a lift mechanism to lift the top piece from the bottom piece. The method may also include extending a first member of the robot device into the top piece to perform a first set of tasks according to a first set of service procedures. The method may also include extending a second member of the robot device into the bottom piece to perform a second set of tasks according to a second set of service procedures.
摘要翻译：一种维修等离子体处理系统的方法。等离子体处理系统可以包括等离子体室。等离子体室可以包括顶部件和底部件，其中顶部件可以设置在底部件的上方。该方法可以包括使用机器人装置来控制提升机构以从底部件抬起顶部件。该方法还可以包括将机器人装置的第一部件延伸到顶部件中，以根据第一组服务程序执行第一组任务。该方法还可以包括将机器人装置的第二构件延伸到底部件中，以根据第二组服务程序执行第二组任务。

120. 发明授权

US08652298B2 Triode reactor design with multiple radiofrequency powers 有权
标题翻译：具有多个射频功率的三极管反应器设计
公开(公告)号：US08652298B2
公开(公告)日：2014-02-18
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译：提供了半导体制造方法，系统和计算机程序。一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。第一，第二和第三电源耦合到底部电极。此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源。

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