专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明申请

US20130327921A1 IMAGE DEVICE AND METHODS OF FORMING THE SAME 有权
标题翻译：图像装置及其形成方法
公开(公告)号：US20130327921A1
公开(公告)日：2013-12-12
申请号：US13492348
申请日：2012-06-08
申请人： U-Ting CHEN , Dun-Nian YAUNG , Jen-Cheng LIU , Yu-Hao SHIH , Chih-Chien WANG , Shih Pei CHOU , Wei-Tung HUANG , Cheng-Ta WU
发明人： U-Ting CHEN , Dun-Nian YAUNG , Jen-Cheng LIU , Yu-Hao SHIH , Chih-Chien WANG , Shih Pei CHOU , Wei-Tung HUANG , Cheng-Ta WU
IPC分类号： H01L31/18 , H01L27/146
CPC分类号： H01L21/0334 , H01L21/0337 , H01L27/14603 , H01L27/1464 , H01L27/14689
摘要： A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.
摘要翻译：形成图像传感器装置的方法包括具有像素区域和周边区域的基板。在周边区域中蚀刻多个第一沟槽。每个第一沟槽具有深度D1。掩模层形成在衬底上。掩模层在像素区域中具有多个开口。间隔件形成在每个开口的内表面中。通过在像素区域中具有间隔物的每个开口蚀刻多个第二沟槽。每个第二沟槽具有深度D2。深度D1大于深度D2。

112. 发明申请

US20130320420A1 CMOS Image Sensors and Methods for Forming the Same 有权
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US20130320420A1
公开(公告)日：2013-12-05
申请号：US13615071
申请日：2012-09-13
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L31/18 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14689 , H01L31/02 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.
摘要翻译：一种器件包括二极管，其包括半导体衬底中的第一，第二和第三掺杂区域。第一掺杂区域是第一导电类型，并具有第一杂质浓度。第二掺杂区域是第一导电类型，并且具有低于第一杂质浓度的第二杂质浓度。第二掺杂区域包围第一掺杂区域。第三掺杂区域具有与第一导电类型相反的第二导电类型，其中第三掺杂区域与第一掺杂区域的一部分和第二掺杂区域的一部分重叠。

113. 发明申请

US20130299931A1 Backside Structure for BSI Image Sensor 有权
标题翻译： BSI图像传感器的背面结构
公开(公告)号：US20130299931A1
公开(公告)日：2013-11-14
申请号：US13597007
申请日：2012-08-28
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685
摘要： An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.
摘要翻译：用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层，在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

114. 发明申请

US20130299886A1 Backside Structure and Methods for BSI Image Sensors 有权
标题翻译： BSI图像传感器的背面结构和方法
公开(公告)号：US20130299886A1
公开(公告)日：2013-11-14
申请号：US13620016
申请日：2012-09-14
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14685 , G02B1/11 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
摘要翻译： BSI图像传感器和方法。在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

115. 发明授权

US08564085B2 CMOS image sensor structure 有权
公开(公告)号：US08564085B2
公开(公告)日：2013-10-22
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/14
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.

116. 发明授权

US08440540B2 Method for doping a selected portion of a device 有权
标题翻译：掺杂设备的选定部分的方法
公开(公告)号：US08440540B2
公开(公告)日：2013-05-14
申请号：US12572833
申请日：2009-10-02
申请人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
发明人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
IPC分类号： H01L21/76
CPC分类号： H01L27/14683 , H01L21/2652 , H01L21/266 , H01L21/76232 , H01L27/14627 , H01L27/1463
摘要： A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.
摘要翻译：一种方法包括在衬底上形成具有开口的保护层，然后通过开口将掺杂剂注入到衬底区域中，保护层保护不同的衬底区域，并减小保护层的厚度。不同的方面包括蚀刻衬底以在其中形成凹陷，然后将掺杂剂注入到凹陷内的衬底区域中，并通过设置在衬底上的保护层中的开口，并且减小保护层的厚度。另一方面包括在衬底上形成保护层，在保护层上形成具有开口的光致抗蚀剂，通过开口蚀刻保护层以暴露衬底，蚀刻衬底以在衬底中形成凹陷，将掺杂剂注入到衬底中保护层保护其下的不同基板部分，并蚀刻保护层以减小其厚度。

117. 发明申请

US20130093036A1 METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR 有权
标题翻译：背景照明图像传感器的制作方法
公开(公告)号：US20130093036A1
公开(公告)日：2013-04-18
申请号：US13644657
申请日：2012-10-04
申请人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
发明人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/0232 , H01L21/6835 , H01L23/49805 , H01L24/02 , H01L24/05 , H01L24/16 , H01L24/81 , H01L24/85 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L31/18 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2224/02313 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2924/00014 , H01L2924/01019 , H01L2924/01087 , H01L2924/01327 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/1461 , H05K3/3436 , H05K2201/10151 , H01L2924/01029 , H01L2924/01028 , H01L2924/01022 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.
摘要翻译：提供一种制造背面照射图像传感器的方法，其包括提供具有前侧和后侧的器件基板，其中在前侧形成像素，并且在像素上形成互连结构，形成再分布层（RDL），覆盖所述互连结构将第一玻璃基板接合到所述RDL，从背面稀释并处理所述器件基板，将第二玻璃基板粘合到所述背面，移除所述第一玻璃基板，以及重新使用所述第一玻璃基板以制造另一个背面照明图像传感器。

118. 发明授权

US08405182B2 Back side illuminated image sensor with improved stress immunity 有权
标题翻译：背面照明图像传感器，具有改善的抗应力
公开(公告)号：US08405182B2
公开(公告)日：2013-03-26
申请号：US13099092
申请日：2011-05-02
申请人： Keng-Yu Chou , Dun-Nian Yaung , Jen-Cheng Liu , Pao-Tung Cheng , Wen-De Wang , Chun-Chieh Chuang , Min-Feng Kao
发明人： Keng-Yu Chou , Dun-Nian Yaung , Jen-Cheng Liu , Pao-Tung Cheng , Wen-De Wang , Chun-Chieh Chuang , Min-Feng Kao
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14623 , H01L27/14636
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。基板具有像素区域和外围区域。图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。图像传感器装置包括设置在周边区域中的参考像素。图像传感器装置包括耦合到基板的前侧的互连结构。互连结构包括多个互连层。图像传感器装置包括在基板的背面上形成的膜。该膜导致基材经受拉伸应力。图像传感器装置包括设置在膜上的辐射阻挡装置。

119. 发明申请

US20130037958A1 CMOS Image Sensor and Method for Forming the Same 有权
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US20130037958A1
公开(公告)日：2013-02-14
申请号：US13205157
申请日：2011-08-08
申请人： Cheng-Ying Ho , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shih Pei Chou
发明人： Cheng-Ying Ho , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shih Pei Chou
IPC分类号： H01L23/48 , H01L31/18
CPC分类号： H01L24/48 , H01L21/76898 , H01L24/05 , H01L24/45 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05027 , H01L2224/05093 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/48624 , H01L2224/48724 , H01L2924/00014 , H01L2924/10253 , H01L2924/13091 , H01L2924/3025 , H01L2924/04941 , H01L2924/04953 , H01L2924/01029 , H01L2924/00 , H01L2224/05552
摘要： An integrated circuit structure includes an interconnect structure that includes a plurality of metal layers, wherein the interconnect structure is under a semiconductor substrate. A metal pad is formed in one of the plurality of metal layers. A dielectric pad extends from a bottom surface of the semiconductor substrate up into the semiconductor substrate. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate and the dielectric pad. An edge of the semiconductor substrate in the opening is vertically aligned to an edge of the dielectric pad in the opening. The opening stops on a top surface of the metal pad. A dielectric spacer is disposed in the opening, wherein the dielectric spacer is formed on the edge of the semiconductor substrate and the edge of the dielectric pad.
摘要翻译：集成电路结构包括具有多个金属层的互连结构，其中互连结构位于半导体衬底之下。金属垫形成在多个金属层中的一个中。电介质垫从半导体衬底的底表面延伸到半导体衬底中。开口从半导体衬底的顶表面向下延伸以穿透半导体衬底和介电垫。开口中的半导体衬底的边缘与开口中的电介质垫的边缘垂直对准。开口在金属垫的顶面停止。电介质垫片设置在开口中，其中介电隔离件形成在半导体衬底的边缘和电介质垫的边缘上。

120. 发明申请

US20130032916A1 Pad Structures in BSI Image Sensor Chips 有权
标题翻译： BSI图像传感器芯片中的焊盘结构
公开(公告)号：US20130032916A1
公开(公告)日：2013-02-07
申请号：US13198111
申请日：2011-08-04
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
IPC分类号： H01L31/0224
CPC分类号： H01L27/14636 , H01L21/76898 , H01L23/481 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L24/83 , H01L27/14623 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L27/14685 , H01L27/14689 , H01L2224/02166 , H01L2224/04042 , H01L2224/0557 , H01L2224/05571 , H01L2224/05572 , H01L2224/05624 , H01L2224/1134 , H01L2224/11916 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/83359 , H01L2924/00014 , H01L2924/01013 , H01L2924/10253 , H01L2924/13091 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into the semiconductor substrate. A low-k dielectric layer is disposed underlying the semiconductor substrate. A first non-low-k dielectric layer is underlying the low-k dielectric layer. A metal pad is underlying the first non-low-k dielectric layer. A second non-low-k dielectric layer is underlying the metal pad. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate, the dielectric pad, and the low-k dielectric layer, wherein the opening lands on a top surface of the metal pad. A passivation layer includes a portion on a sidewall of the opening, wherein a portion of the passivation layer at a bottom of the opening is removed.
摘要翻译：集成电路结构包括半导体衬底和从半导体衬底的底表面延伸到半导体衬底中的介质衬垫。低k电介质层设置在半导体衬底下方。第一个非低k电介质层位于低k电介质层的下面。金属焊盘位于第一非低k电介质层的下面。第二个非低k电介质层位于金属焊盘的下方。开口从半导体衬底的顶表面向下延伸以穿透半导体衬底，电介质衬垫和低k电介质层，其中，开口焊接在金属衬垫的顶表面上。钝化层包括在开口的侧壁上的部分，其中去除开口底部的钝化层的一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式