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1. 发明授权

US09356058B2 Backside structure for BSI image sensor 有权
标题翻译： BSI图像传感器的背面结构
公开(公告)号：US09356058B2
公开(公告)日：2016-05-31
申请号：US13597007
申请日：2012-08-28
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L21/311 , H01L27/146
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685
摘要： An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.
摘要翻译：用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层，在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

2. 发明申请

US20130299931A1 Backside Structure for BSI Image Sensor 有权
标题翻译： BSI图像传感器的背面结构
公开(公告)号：US20130299931A1
公开(公告)日：2013-11-14
申请号：US13597007
申请日：2012-08-28
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685
摘要： An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.
摘要翻译：用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层，在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

3. 发明申请

US20130299886A1 Backside Structure and Methods for BSI Image Sensors 有权
标题翻译： BSI图像传感器的背面结构和方法
公开(公告)号：US20130299886A1
公开(公告)日：2013-11-14
申请号：US13620016
申请日：2012-09-14
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14685 , G02B1/11 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
摘要翻译： BSI图像传感器和方法。在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

4. 发明授权

US08709854B2 Backside structure and methods for BSI image sensors 有权
标题翻译： BSI图像传感器的背面结构和方法
公开(公告)号：US08709854B2
公开(公告)日：2014-04-29
申请号：US13620016
申请日：2012-09-14
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , G02B1/11 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
摘要翻译： BSI图像传感器和方法。在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

5. 发明授权

US08405182B2 Back side illuminated image sensor with improved stress immunity 有权
标题翻译：背面照明图像传感器，具有改善的抗应力
公开(公告)号：US08405182B2
公开(公告)日：2013-03-26
申请号：US13099092
申请日：2011-05-02
申请人： Keng-Yu Chou , Dun-Nian Yaung , Jen-Cheng Liu , Pao-Tung Cheng , Wen-De Wang , Chun-Chieh Chuang , Min-Feng Kao
发明人： Keng-Yu Chou , Dun-Nian Yaung , Jen-Cheng Liu , Pao-Tung Cheng , Wen-De Wang , Chun-Chieh Chuang , Min-Feng Kao
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14623 , H01L27/14636
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。基板具有像素区域和外围区域。图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。图像传感器装置包括设置在周边区域中的参考像素。图像传感器装置包括耦合到基板的前侧的互连结构。互连结构包括多个互连层。图像传感器装置包括在基板的背面上形成的膜。该膜导致基材经受拉伸应力。图像传感器装置包括设置在膜上的辐射阻挡装置。

6. 发明申请

US20110298072A1 RIDGE STRUCTURE FOR BACK SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的RIDGE结构
公开(公告)号：US20110298072A1
公开(公告)日：2011-12-08
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器包括设置在基板中的第一和第二放射线检测装置。第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。第一和第二脊各自具有第一折射率值。第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

7. 发明授权

US08981510B2 Ridge structure for back side illuminated image sensor 有权
标题翻译：背面照明图像传感器的脊结构
公开(公告)号：US08981510B2
公开(公告)日：2015-03-17
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器包括设置在基板中的第一和第二放射线检测装置。第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。第一和第二脊各自具有第一折射率值。第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

8. 发明申请

US20130020662A1 NOVEL CMOS IMAGE SENSOR STRUCTURE 有权
标题翻译：新型CMOS图像传感器结构
公开(公告)号：US20130020662A1
公开(公告)日：2013-01-24
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/02
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供其中设置有辐射感测区域的第一基板。该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。该方法包括将第二衬底的第一部分接合到第一衬底。该方法包括在接合之后，去除第二衬底的第二部分。该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

9. 发明授权

US08564085B2 CMOS image sensor structure 有权
公开(公告)号：US08564085B2
公开(公告)日：2013-10-22
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/14
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.

10. 发明授权

US08941204B2 Apparatus and method for reducing cross talk in image sensors 有权
标题翻译：降低图像传感器串扰的装置和方法
公开(公告)号：US08941204B2
公开(公告)日：2015-01-27
申请号：US13458827
申请日：2012-04-27
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146 , H01L21/762 , H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463
摘要： A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.
摘要翻译：一种用于减少图像传感器中的串扰的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片中形成隔离区域，其中隔离区域包围光有源区域，在隔离区域中形成从后侧开口并且用电介质材料覆盖开口的上端，以形成嵌入在背面照射的图像传感器晶片的隔离区域中的气隙。

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