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101. 发明授权

US07166874B2 Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor 有权
标题翻译：具有含铟氮化物半导体的量子阱结构有源层的氮化物半导体
公开(公告)号：US07166874B2
公开(公告)日：2007-01-23
申请号：US10718652
申请日：2003-11-24
申请人： Shuji Nakamura , Shinichi Nagahama , Naruhito Iwasa
发明人： Shuji Nakamura , Shinichi Nagahama , Naruhito Iwasa
IPC分类号： H01L29/24 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： H01S5/343 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/325 , H01S5/2004 , H01S5/2009 , H01S5/2202 , H01S5/3201 , H01S5/3206 , H01S5/321 , H01S5/3211 , H01S5/3404 , H01S5/3412 , H01S5/3413 , H01S5/34333
摘要： A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
摘要翻译：氮化物半导体器件具有氮化物半导体层结构。该结构包括含有含铟氮化物半导体的量子阱结构的有源层。提供具有比有源层的能隙大的带隙能量的第一氮化物半导体层与有源层接触。具有比第一层小的带隙能量的第二氮化物半导体层设置在第一层上。此外，具有比第二层的能隙大的带隙能量的第三氮化物半导体层设置在第二层上。

102. 发明申请

US20070012932A1 Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof 有权
标题翻译：氮化物半导体; 发光装置，发光二极管，激光装置和使用该半导体的灯; 及其制造方法
公开(公告)号：US20070012932A1
公开(公告)日：2007-01-18
申请号：US10574202
申请日：2004-10-01
申请人： Masato Kobayakawa , Hideki Tomozawa , Mineo Okuyama
发明人： Masato Kobayakawa , Hideki Tomozawa , Mineo Okuyama
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01L33/32 , H01L33/325 , H01S5/3086 , H01S5/3407 , H01S5/34333 , H01S2304/04
摘要： An object of the present invention is to provide a nitride semiconductor product which causes no time-dependent deterioration in reverse withstand voltage and maintains a satisfactory initial reverse withstand voltage. The inventive nitride semiconductor product comprises an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer, wherein each barrier layer comprises a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C, and the barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.
摘要翻译：本发明的目的是提供一种氮化物半导体产品，其不会导致反向耐受电压的时间依赖性劣化并且保持令人满意的初始反向耐受电压。本发明的氮化物半导体产品包括由氮化物半导体形成的n型层，发光层和p型层，并按顺序层叠在基板上，发光层具有量子其中阱层被具有比阱层的带隙宽的带隙的势垒层夹持的阱结构，其中每个势垒层包括在比阱层的生长温度高的温度下生长的势垒层C ，以及在低于势垒层C的生长温度的温度下生长的势垒层E，并且阻挡子层C相对于势垒子层E配置为更靠近衬底。

103. 发明申请

US20060060872A1 High output group III nitride light emitting diodes 无效
标题翻译：高输出III族氮化物发光二极管
公开(公告)号：US20060060872A1
公开(公告)日：2006-03-23
申请号：US11112429
申请日：2005-04-22
申请人： John Edmond , Michael Bergmann , David Emerson , Kevin Haberern
发明人： John Edmond , Michael Bergmann , David Emerson , Kevin Haberern
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325
摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
摘要翻译：公开了一种发光二极管，其包括碳化硅衬底和由衬底上的III族氮化物材料体系形成的发光结构。该二极管具有大于100,000平方微米的面积，其在20毫安电流下的辐射通量为至少29毫瓦，其主波长为390至540纳米。

104. 发明授权

US07001790B2 Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity 失效
标题翻译：具有改善的发光强度的发光铝镓铟氮化物半导体器件
公开(公告)号：US07001790B2
公开(公告)日：2006-02-21
申请号：US09783035
申请日：2001-02-15
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译：发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3）（n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中，具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga）在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。镍电极（7,8）分别连接到p层（6）和n + +层（4）。一个凹槽（9）使电极（7,8）电绝缘。选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

105. 发明授权

US06936860B2 Light emitting diode having an insulating substrate 有权
标题翻译：具有绝缘基板的发光二极管
公开(公告)号：US06936860B2
公开(公告)日：2005-08-30
申请号：US10063822
申请日：2002-05-16
申请人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
发明人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
IPC分类号： H01L21/28 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01L33/00 , H01L29/12
CPC分类号： H01L33/04 , H01L33/14 , H01L33/325
摘要： An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.
摘要翻译： LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层，所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。

106. 发明申请

US20050170539A1 Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method 有权
公开(公告)号：US20050170539A1
公开(公告)日：2005-08-04
申请号：US11095450
申请日：2005-03-31
申请人： Yuji Hori , Osamu Oda , Mitsuhiro Tanaka , Bruno Daudin , Eva Monroy
发明人： Yuji Hori , Osamu Oda , Mitsuhiro Tanaka , Bruno Daudin , Eva Monroy
IPC分类号： C23C14/06 , C23C16/34 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/32 , H01L21/00
CPC分类号： H01L33/325 , B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/007 , H01L33/06
摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

107. 发明授权

US06861340B2 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device 失效
标题翻译：氮化物半导体层的热处理方法及半导体装置的制造方法
公开(公告)号：US06861340B2
公开(公告)日：2005-03-01
申请号：US10326072
申请日：2002-12-23
申请人： Motonobu Takeya
发明人： Motonobu Takeya
IPC分类号： C23C16/34 , H01L21/26 , H01L21/268 , H01L21/324 , H01L21/331 , H01L29/205 , H01L29/73 , H01L33/00 , H01L33/32 , H01L33/40 , H01S5/323 , H01S5/343 , H01L21/265 , H01L21/425 , H01L21/21
CPC分类号： B82Y20/00 , H01L21/3245 , H01L33/0095 , H01L33/325 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
摘要翻译：一种热处理氮化物半导体层的方法，包括在至少200℃但小于400℃的温度下加热掺杂有p型杂质的氮化物半导体层至少100分钟。

108. 再颁专利

USRE38613E1 Method for growing a nitride compound semiconductor 有权
标题翻译：生长氮化物半导体的方法
公开(公告)号：USRE38613E1
公开(公告)日：2004-10-05
申请号：US10174289
申请日：2002-09-18
申请人： Hiroji Kawai , Tsunenori Asatsuma , Fumihiko Nakamura
发明人： Hiroji Kawai , Tsunenori Asatsuma , Fumihiko Nakamura
IPC分类号： H01L2104
CPC分类号： H01L33/325 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, a p-type nitride compound semiconductor, such as p-type GaN, is grown by metal organic chemical vapor deposition methods using a nitrogen source material which does not release hydrogen during release of nitrogen and the semiconductor is grown in an inactive gas. The nitrogen source materials may be selected from nitrogen compounds that contain hydrogen radicals groups and alkyl radicals groups and/or phenyl radicals groups provided that the total amount of hydrogen radicals groups is less than or equal to the sum total of alkyl radicals groups and phenyl radicals groups present in the nitrogen compound used as the nitrogen source material.

109. 发明申请

US20040183063A1 NITRIDE SEMICONDUCTOR WITH ACTIVE LAYER OF WELL STRUCTURE WITH INDIUM-CONTAINING NITRIDE SEMICONDUCTOR 有权
标题翻译：具有含氮氮化物半导体结构的活性层的氮化物半导体
公开(公告)号：US20040183063A1
公开(公告)日：2004-09-23
申请号：US10801038
申请日：2004-03-16
申请人： Nichia Corporation
发明人： Shuji Nakamura , Shinichi Nagahama , Naruhito Iwasa
IPC分类号： H01L029/06
CPC分类号： H01S5/343 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/325 , H01S5/2004 , H01S5/2009 , H01S5/2202 , H01S5/3201 , H01S5/3206 , H01S5/321 , H01S5/3211 , H01S5/3404 , H01S5/3412 , H01S5/3413 , H01S5/34333
摘要： A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
摘要翻译：氮化物半导体器件具有氮化物半导体层结构。该结构包括含有含铟氮化物半导体的量子阱结构的有源层。提供具有比有源层的能隙大的带隙能量的第一氮化物半导体层与有源层接触。具有比第一层小的带隙能量的第二氮化物半导体层设置在第一层上。此外，具有比第二层的能隙大的带隙能量的第三氮化物半导体层设置在第二层上。

110. 发明授权

US06791103B2 Light-emitting gallium nitride-based compound semiconductor device 失效
标题翻译：发光氮化镓系化合物半导体装置
公开(公告)号：US06791103B2
公开(公告)日：2004-09-14
申请号：US10227834
申请日：2002-08-27
申请人： Shuji Nakamura , Takashi Mukai , Naruhito Iwasa
发明人： Shuji Nakamura , Takashi Mukai , Naruhito Iwasa
IPC分类号： H01L2906
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/025 , H01L33/325 , H01S5/32341
摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0
摘要翻译：一种双异质结构的发光氮化镓基化合物半导体器件。双异质结构包括由掺杂有p型和/或n型杂质的低电阻率In x Ga 1-x N（0

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