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101. 发明申请

US20060094817A1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process 有权
标题翻译：可聚合氟化合物，制备方法，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20060094817A1
公开(公告)日：2006-05-04
申请号：US11259179
申请日：2005-10-27
申请人： Yuji Harada , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
发明人： Yuji Harada , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
IPC分类号： C08L27/12
CPC分类号： G03F7/0397 , C07D309/10 , C08F220/24 , G03F7/0046 , G03F7/0392 , Y02P20/55
摘要： A polymerizable fluorinated compound having formula (2a) or (2b) wherein R1 and R2 are H or C1-C20 alkyl or fluoroalkyl, R3 is H, F or C1-C4 alkyl or fluoroalkyl, and R is H or a protective group is polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light of wavelength≦300 nm, alkali development amenability, and dry etch resistance.
摘要翻译：具有式（2a）或（2b）的可聚合氟化化合物，其中R 1和R 2是H或C 1 -C 3 - 20个或多个烷基或氟烷基，R 3是H，F或C 1 -C 4烷基或氟代烷基，R是H 或保护基团聚合成氟化聚合物，其用作基础聚合物以配制对波长<= 300nm的激光具有透明度的抗蚀剂组合物，碱显影性能和耐干蚀刻性。

102. 发明授权

US06333436B1 Styrene derivatives 有权
标题翻译：苯乙烯衍生物
公开(公告)号：US06333436B1
公开(公告)日：2001-12-25
申请号：US09688365
申请日：2000-10-12
申请人： Matsuo Nakashima , Jun Hatakeyama , Jun Watanabe , Yuji Harada
发明人： Matsuo Nakashima , Jun Hatakeyama , Jun Watanabe , Yuji Harada
IPC分类号： C07C4122
CPC分类号： C07C43/313 , C07C43/225 , C07C69/017 , C07C69/712 , C07C69/96 , C07F7/1804 , Y02P20/55
摘要： Styrene derivatives of formula (1) are novel wherein R1 is H, F, C1-20 alkyl or fluorinated C1-20 alkyl, R2 in cis or trans conformation is F, C1-20 alkyl or fluorinated C1-20 alkyl, R3 is a phenol protecting group, p, q and r are integers in the range of 0≦p
摘要翻译：式（1）的苯乙烯衍生物是新的，其中R 1是H，F，C 1-20烷基或氟化C 1-20烷基，R 2在顺式或反式构象中是F，C 1-20烷基或氟化C 1-20烷基，R 3是苯酚保护基，p，q和r为0 <= p <5,0 <= q <5,0

103. 发明授权

US07012161B2 Compound, fluorine-containing polymerizable cyclic olefin compound 有权
标题翻译：化合物，含氟可聚合环烯烃化合物
公开(公告)号：US07012161B2
公开(公告)日：2006-03-14
申请号：US10918465
申请日：2004-08-16
申请人： Takeru Watanabe , Takeshi Kinsho , Yuji Harada
发明人： Takeru Watanabe , Takeshi Kinsho , Yuji Harada
IPC分类号： C07C49/21 , C07C49/215 , C07C45/63 , C08F114/18 , G03C1/492
CPC分类号： C08F32/08 , C07C33/44 , C07C45/52 , C07C49/24 , C07C49/242 , C07C233/18 , C07C311/04 , C07C323/15 , C07C2602/42 , C07C2603/86 , G03F7/0046 , G03F7/0395
摘要： There is disclosed a fluorine-containing polymerizable cyclic olefin compound that has one or more partial structures represented by the following general formula (1) or (2). There can be provided a novel fluorine-containing polymerizable cyclic olefin compound which is excellent in transparency to irradiation, for example, at a wavelength of 200 nm or less, especially at a wavelength of 160 nm or less and dry etching resistance, has low hydrophobicity, and is excellent in development characteristics, and thus is useful as a raw material for a base resin of photoresist composition
摘要翻译：公开了具有一个或多个由以下通式（1）或（2）表示的部分结构的含氟可聚合环烯烃化合物。可以提供例如在200nm以下的波长，特别是160nm以下的波长，耐干蚀刻性等下，透光性优异的含氟聚合性环状烯烃化合物具有低疏水性，显影特性优异，因此可用作光致抗蚀剂组合物的基础树脂的原料

104. 发明授权

US4508428A Ink projections on the polarizer of an electro-optic display 失效
标题翻译：电光显示器的偏振器上的墨水投影
公开(公告)号：US4508428A
公开(公告)日：1985-04-02
申请号：US345667
申请日：1982-02-04
申请人： Yuji Harada
发明人： Yuji Harada
IPC分类号： G02B5/30 , G02F1/1335 , G02F1/133
CPC分类号： G02F1/1335 , G02F1/133528
摘要： An electro-optic device comprising a polarizing plate or a polarizing film is characterized in that said electro-optic device is provided with a plurality of projections on at least one of the surface of the polarizing plate or the polarizing film opposing to a substrate, and the surface of the substrate opposing to the polarizing plate or film.
摘要翻译：包括偏振板或偏振膜的电光装置的特征在于，所述电光装置在与基板相对的偏振板或偏振膜的至少一个表面上设置有多个突起，以及衬底的与偏振片或膜相对的表面。

105. 发明授权

US3950627A Push button switch 失效
标题翻译：按钮开关
公开(公告)号：US3950627A
公开(公告)日：1976-04-13
申请号：US397803
申请日：1973-09-17
申请人： Minoru Murata , Yuji Harada
发明人： Minoru Murata , Yuji Harada
IPC分类号： H01H13/12 , H01H13/70 , H01H13/703 , H01H13/80 , H01H13/52
CPC分类号： H01H13/80 , H01H13/12 , H01H13/7006 , H01H13/703 , H01H2201/002 , H01H2201/01 , H01H2205/002 , H01H2205/022 , H01H2207/03 , H01H2211/006 , H01H2217/02 , H01H2221/062 , H01H2221/064 , H01H2233/022 , H01H2235/018
摘要： A push button switch comprises a key top having a recess and a resilient member provided so as to surround the recess of the key top. The resilient member has a projected portion extending therefrom in the direction away from the recess of the key top, and at least the end of the projected portion is formed of conductive material. A contact member is secured to a base plate in opposed relationship with the projected portion. A holder member holds the key top in such a manner that the projected portion of the resilient member is normally spaced apart from the contact member but engages the contact member upon depression of the key top.

106. 发明授权

US08916331B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08916331B2
公开(公告)日：2014-12-23
申请号：US13324123
申请日：2011-12-13
申请人： Koji Hasegawa , Takeshi Sasami , Yuji Harada , Taku Morisawa
发明人： Koji Hasegawa , Takeshi Sasami , Yuji Harada , Taku Morisawa
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/11
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A polymer having a partial structure —C(CF3)2OH in recurring units is used as an additive to formulate a resist composition. A photoresist film formed from the resist composition has sufficient barrier performance against water to prevent any resist components from being leached in water and thus minimize any change of pattern profile.
摘要翻译：使用重复单元中具有部分结构-C（CF 3）2 OH的聚合物作为配制抗蚀剂组合物的添加剂。由抗蚀剂组合物形成的光致抗蚀剂膜对水具有足够的阻挡性能，以防止任何抗蚀剂组分在水中浸出，从而最小化图案轮廓的任何变化。

107. 发明申请

US20120214100A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 审中-公开
标题翻译：使用它的耐腐蚀组合物和图案处理方法
公开(公告)号：US20120214100A1
公开(公告)日：2012-08-23
申请号：US13396081
申请日：2012-02-14
申请人： Tomohiro Kobayashi , Youichi Ohsawa , Yuji Harada , Yuki Suka
发明人： Tomohiro Kobayashi , Youichi Ohsawa , Yuji Harada , Yuki Suka
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： There is disclosed a resist composition, wherein the composition is used in a lithography and comprises at least: a polymer (A) that becomes a base resin whose alkaline-solubility changes by an acid, a photo acid generator (B) generating a sulfonic acid represented by the following general formula (1) by responding to a high energy beam, and a polymer additive (C) represented by the following general formula (2). There can be provided a resist composition showing not only excellent lithography properties but also a high receding contact angle, and in addition, being capable of suppressing a blob defect in both the immersion exposures using and not using a top coat; and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂组合物，其中该组合物用于光刻，并且至少包括：成为其酸溶性变化的碱性树脂的聚合物（A），产生磺酸的光酸产生剂（B）由高能束响应的以下通式（1）表示，和由以下通式（2）表示的聚合物添加剂（C）。可以提供抗蚀剂组合物，其不仅显示出优异的光刻性能，而且还具有高的后退接触角，此外，还能够使用并不使用顶涂层来抑制浸没曝光中的斑点缺陷; 以及使用其的图案化处理。

108. 发明授权

US07759711B2 Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same 失效
标题翻译：具有由于晶格缺陷引起的电阻增加的基板的半导体器件及其制造方法
公开(公告)号：US07759711B2
公开(公告)日：2010-07-20
申请号：US12255933
申请日：2008-10-22
申请人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
发明人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
IPC分类号： H01L29/32 , H01L21/26
CPC分类号： H01L29/7393 , H01L29/063 , H01L29/66325
摘要： Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate.
摘要翻译：公开了一种半导体器件，包括：形成在P型半导体衬底中的N型RESURF区; 形成在半导体衬底的上部以与RESURF区相邻的P型基极区; 形成在所述基底区域中以与所述RESURF区域分离的N型发射极/源极区域; 形成在所述基极区域中以与所述发射极/源极区域相邻的P型基极连接区域; 栅极绝缘膜和覆盖发射极/源极区域，基极区域和RESURF区域的栅电极; 以及形成在RESURF区域中以与基底区域分离的P型集电极区域。在半导体衬底中产生晶格缺陷，使得半导体衬底的电阻值是取决于注入在半导体衬底中的杂质的浓度的半导体衬底的电阻值的两倍或更多。

109. 发明申请

US20090206366A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090206366A1
公开(公告)日：2009-08-20
申请号：US12255933
申请日：2008-10-22
申请人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
发明人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/7393 , H01L29/063 , H01L29/66325
摘要： Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate.
摘要翻译：公开了一种半导体器件，包括：形成在P型半导体衬底中的N型RESURF区; 形成在半导体衬底的上部以与RESURF区相邻的P型基极区; 形成在所述基底区域中以与所述RESURF区域分离的N型发射极/源极区域; 形成在所述基极区域中以与所述发射极/源极区域相邻的P型基极连接区域; 栅极绝缘膜和覆盖发射极/源极区域，基极区域和RESURF区域的栅电极; 以及形成在RESURF区域中以与基底区域分离的P型集电极区域。在半导体衬底中产生晶格缺陷，使得半导体衬底的电阻值是取决于注入在半导体衬底中的杂质的浓度的半导体衬底的电阻值的两倍或更多。

110. 发明申请

US20090090978A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090090978A1
公开(公告)日：2009-04-09
申请号：US12242142
申请日：2008-09-30
申请人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
发明人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
IPC分类号： H01L21/8236 , H01L27/088
CPC分类号： H01L21/823462 , H01L21/823418
摘要： A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.
摘要翻译：在第一导电型半导体基板上一起设置高压晶体管和包括第二导电型MOSFET的外围电路。高电压晶体管包括：形成在半导体衬底中的第二导电类型的低浓度漏极区域; 形成在半导体衬底中并与低浓度漏极区隔开的第二导电类型的低浓度源区; 以及具有比低浓度源区域的扩散深度更深的扩散深度的第二导电类型的高浓度源区域。低浓度源极区域的扩散深度等于MOSFET的源极/漏极区域的扩散深度。

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