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101. 发明申请

US20070032004A1 Copper barrier reflow process employing high speed optical annealing 失效
公开(公告)号：US20070032004A1
公开(公告)日：2007-02-08
申请号：US11199570
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/8234
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76864 , H01L21/76873
摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.

102. 发明申请

US20060264060A1 Low temperature plasma deposition process for carbon layer deposition 失效
标题翻译：用于碳层沉积的低温等离子体沉积工艺
公开(公告)号：US20060264060A1
公开(公告)日：2006-11-23
申请号：US11131941
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/31
CPC分类号： C23C16/26 , C23C16/505 , C23C16/52 , H01L21/268 , H01L21/3146
摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.
摘要翻译：在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

103. 发明申请

US20060260545A1 Low temperature absorption layer deposition and high speed optical annealing system 审中-公开
标题翻译：低温吸收层沉积和高速光学退火系统
公开(公告)号：US20060260545A1
公开(公告)日：2006-11-23
申请号：US11131900
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/507 , C23C16/26 , C23C16/56 , H01J37/32082 , H01L21/3146 , H01L21/67115 , H01L21/67207
摘要： An integrated system for processing a semiconductor wafer includes a toroidal source plasma reactor for depositing a heat absorbing layer, the reactor including a wafer support, a reactor chamber, an external reentrant toroidal conduit coupled to said chamber on generally opposing sides thereof, an RF source power applicator for coupling power to a section of said external reentrant conduit and a process gas source containing a heat absorbing material precursor gas. The integrated system further includes an optical annealing chamber.
摘要翻译：一种用于处理半导体晶片的集成系统包括用于沉积吸热层的环形源等离子体反应器，所述反应器包括晶片支架，反应室，与其大致相对的侧面上的所述室耦合的外部折入环形导管，RF源用于将功率耦合到所述外部折返导管的一部分的电源施加器和包含吸热材料前体气体的处理气体源。集成系统还包括光学退火室。

104. 发明申请

US20060238953A1 Electrostatic chuck with smart lift-pin mechanism for a plasma reactor 有权
标题翻译：用于等离子体反应器的具有智能举升机构的静电卡盘
公开(公告)号：US20060238953A1
公开(公告)日：2006-10-26
申请号：US11115951
申请日：2005-04-26
申请人： Hiroji Hanawa , Andrew Nguyen , Kenneth Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
发明人： Hiroji Hanawa , Andrew Nguyen , Kenneth Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
IPC分类号： H01T23/00
CPC分类号： H01L21/68742 , H01L21/6831
摘要： A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.
摘要翻译：用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。升降台面向销的底端，并可在与升降方向大致平行的方向上平移。小力检测器感测由提升销施加的力足够大以指示夹紧晶片并且足够小以避免剥离晶片。大力检测器感测由提升销施加的力在足以脱扣的范围内晶圆。

105. 发明申请

US20050214477A1 Chemical vapor deposition plasma process using an ion shower grid 有权
标题翻译：使用离子淋浴网格的化学气相沉积等离子体工艺
公开(公告)号：US20050214477A1
公开(公告)日：2005-09-29
申请号：US10873485
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C16/00 , C23C16/40 , C23C16/452 , C23C16/517
CPC分类号： C23C16/452 , C23C16/402 , C23C16/517
摘要： A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.
摘要翻译：在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口离子淋浴网格的表面。工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力发生区域至少是过程区域压力的几倍。通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格以从等离子体中产生离子通过网格并进入过程区域。

106. 发明申请

US20050211546A1 Reactive sputter deposition plasma process using an ion shower grid 审中-公开
标题翻译：使用离子淋浴网格的反应溅射沉积等离子体工艺
公开(公告)号：US20050211546A1
公开(公告)日：2005-09-29
申请号：US10873602
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C14/34 , C23C14/35 , C23C16/04 , C23C16/507 , H01J37/32
CPC分类号： C23C14/358 , C23C16/045 , C23C16/507 , H01J37/32357 , H01J37/32449
摘要： A reactive sputter deposition process is carried out in a reactor chamber having an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma from deposition precursor species sputtered from the target, applying a grid potential to the ion shower grid to create a flux of ions through the grid, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.
摘要翻译：反应性溅射沉积工艺在具有将腔室分成上离子产生区域和较低工艺区域的离子喷淋栅格的反应室中进行，离子喷淋栅格具有相对于离子淋浴网格的表面。工件被放置在处理区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。该方法包括从离子产生区域中包含半导体物质的溅射靶溅射沉积前体物质，将RF等离子体源功率施加到离子产生区域，以便从沉淀前体物质溅射出靶，产生栅电位到离子淋浴网格以产生通过栅格的离子通量，并且将气体物质提供到反应器室中以与半导体原子组合以形成沉积在工件表面上的分子。

107. 发明申请

US20050188919A1 Solvent bath and drain 有权
标题翻译：溶剂浴和排水
公开(公告)号：US20050188919A1
公开(公告)日：2005-09-01
申请号：US10788578
申请日：2004-02-27
申请人： Andrew Nguyen
发明人： Andrew Nguyen
IPC分类号： B05C11/02 , B05C13/00 , H01L21/00
CPC分类号： H01L21/67086 , H01L21/6708
摘要： According to one aspect of the invention, a wafer processing apparatus is provided. The wafer processing apparatus may include a wafer support, a dispense head, and a solvent bath. The dispense head may be moveable between a position over the wafer support and a position over the solvent bath. When the dispense head is positioned over the solvent bath, a fluid dispensed from the dispense head may enter a drain and nozzles on the dispense head may be exposed to a controlled atmosphere within a chamber of the solvent bath.
摘要翻译：根据本发明的一个方面，提供一种晶片处理装置。晶片处理装置可以包括晶片支撑件，分配头和溶剂浴。分配头可以在晶片支撑件上方的位置和溶剂浴上方的位置之间移动。当分配头定位在溶剂浴上方时，从分配头分配的流体可以进入排水口，分配头上的喷嘴可能暴露于溶剂浴室内的受控气氛中。

108. 发明授权

US06893907B2 Fabrication of silicon-on-insulator structure using plasma immersion ion implantation 失效
标题翻译：使用等离子体浸没离子注入制造绝缘体上硅结构
公开(公告)号：US06893907B2
公开(公告)日：2005-05-17
申请号：US10786410
申请日：2004-02-24
申请人： Dan Maydan , Randir P. S. Thakur , Kenneth S. Collins , Amir Al-Bayati , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Dan Maydan , Randir P. S. Thakur , Kenneth S. Collins , Amir Al-Bayati , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/321 , H01J2237/0825 , Y10S438/977
摘要： A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.
摘要翻译：在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压，将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心并且在硅表面层中具有有限的氧浓度。然后减小硅表面层中的氧浓度以允许外延硅沉积。

109. 发明申请

US20050051272A1 Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电感耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US20050051272A1
公开(公告)日：2005-03-10
申请号：US10646467
申请日：2003-08-22
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.
摘要翻译：用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域，以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。

110. 发明授权

US06494986B1 Externally excited multiple torroidal plasma source 失效
标题翻译：外激发多环形等离子体源
公开(公告)号：US06494986B1
公开(公告)日：2002-12-17
申请号：US09636435
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second pairs of openings therethrough near generally opposite sides of the workpiece support. At least first and second hollow conduits are connected to respective pairs of the openings to provide at least first and second closed torroidal paths through the respective conduits and extending between respective pairs of the openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal paths. Coil antennas are coupled to RF power sources and inductively coupled to the interior of the hollow conduits and capable of maintaining a plasma in the torroidal paths.
摘要翻译：一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的面向所述外壳的上部的工件支撑件，所述外壳具有穿过所述工件支撑件的大体相对侧的至少第一和第二对开口。至少第一和第二空心管道连接到相应的一对开口，以提供至少第一和第二封闭的环形路径穿过相应的导管并且在相应的成对开口之间跨越晶片表面延伸。工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。线圈天线耦合到RF功率源，并且感应耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

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