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101. 发明授权

US06902965B2 Strained silicon structure 有权
标题翻译：应变硅结构
公开(公告)号：US06902965B2
公开(公告)日：2005-06-07
申请号：US10699574
申请日：2003-10-31
申请人： Chung-Hu Ge , Wen-Chin Lee , Chenming Hu
发明人： Chung-Hu Ge , Wen-Chin Lee , Chenming Hu
IPC分类号： H01L21/02 , H01L21/20 , H01L21/336 , H01L21/338 , H01L21/762 , H01L21/8238 , H01L29/08 , H01L29/10 , H01L29/74 , H01L29/78 , H01L31/0328 , H01L31/072
CPC分类号： H01L29/0847 , H01L21/823807 , H01L21/823878 , H01L29/1054 , H01L29/6659 , H01L29/7833 , H01L29/7842
摘要： A semiconductor device includes a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, a first trench, and a second trench. The first epitaxial layer is formed on the substrate. The first layer has lattice mismatch relative to the substrate. The second epitaxial layer is formed on the first layer, and the second layer has lattice mismatch relative to the first layer. The third epitaxial layer is formed on the second layer, and the third layer has lattice mismatch relative to the second layer. Hence, the third layer may be strained silicon. The first trench extends through the first layer. The second trench extends through the third layer and at least partially through the second layer. At least part of the second trench is aligned with at lease part of the first trench, and the second trench is at least partially filled with an insulating material.
摘要翻译：半导体器件包括衬底，第一外延层，第二外延层，第三外延层，第一沟槽和第二沟槽。第一外延层形成在基板上。第一层相对于基底具有晶格失配。第二外延层形成在第一层上，第二层相对于第一层具有晶格失配。第三外延层形成在第二层上，第三层相对于第二层具有晶格失配。因此，第三层可以是应变硅。第一沟槽延伸穿过第一层。第二沟槽延伸穿过第三层并且至少部分地穿过第二层。第二沟槽的至少一部分与第一沟槽的至少部分对准，并且第二沟槽至少部分地填充有绝缘材料。

102. 发明授权

US06900502B2 Strained channel on insulator device 有权
标题翻译：应变绝缘体上的通道
公开(公告)号：US06900502B2
公开(公告)日：2005-05-31
申请号：US10407761
申请日：2003-04-03
申请人： Chung-Hu Ge , Chao-Hsuing Wang , Chien-Chao Huang , Wen-Chin Lee , Chenming Hu
发明人： Chung-Hu Ge , Chao-Hsuing Wang , Chien-Chao Huang , Wen-Chin Lee , Chenming Hu
IPC分类号： H01L21/00 , H01L21/30 , H01L21/762 , H01L21/84 , H01L27/01 , H01L27/12 , H01L29/02 , H01L29/72 , H01L29/772
CPC分类号： H01L21/823807 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/7848
摘要： A semiconductor device 10 includes a substrate 12 (e.g., a silicon substrate) with an insulating layer 14 (e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer 16 (e.g., SiGe) is disposed on the insulating layer 14 and a second semiconducting material layer 18 (e.g., Si) is disposed on the first semiconducting material layer 16. The first and second semiconducting material layers 16 and 18 preferably have different lattice constants such that the first semiconducting material layer 16 is compressive and the second semiconducting material layer is tensile 18.
摘要翻译：半导体器件10包括其上设置有绝缘层14（例如氧化物如二氧化硅）的衬底12（例如，硅衬底）。第一半导体材料层16（例如，SiGe）设置在绝缘层14上，并且第二半导体材料层18（例如，Si）设置在第一半导体材料层16上。第一和第二半导体材料层16和18优选地具有不同的晶格常数，使得第一半导体材料层16是压缩的，并且第二半导体材料层是拉伸18。

103. 发明授权

US06882025B2 Strained-channel transistor and methods of manufacture 有权
标题翻译：应变通道晶体管及其制造方法
公开(公告)号：US06882025B2
公开(公告)日：2005-04-19
申请号：US10423513
申请日：2003-04-25
申请人： Yee-Chia Yeo , Chih-Hsin Ko , Wen-Chin Lee , Chenming Hu
发明人： Yee-Chia Yeo , Chih-Hsin Ko , Wen-Chin Lee , Chenming Hu
IPC分类号： H01L21/762 , H01L21/8238 , H01L27/12 , H01L29/00
CPC分类号： H01L29/7842 , H01L21/76229 , H01L21/76237 , H01L21/76283 , H01L21/823807 , H01L21/823878 , H01L27/1203
摘要： A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.
摘要翻译：半导体器件包括其中形成有第一和第二隔离沟槽的半导体材料区域。第一隔离槽衬有具有低氧扩散速率的第一材料并填充绝缘材料。第二隔离槽不是衬有第一材料，而是用绝缘材料填充。形成在第一隔离区域附近的第一晶体管和与第二隔离区域相邻形成的第二晶体管。

104. 发明申请

US20050051867A1 SRAM cell and methods of fabrication 有权
标题翻译： SRAM单元和制造方法
公开(公告)号：US20050051867A1
公开(公告)日：2005-03-10
申请号：US10852324
申请日：2004-05-24
申请人： Wen-Chin Lee , Yee-Chia Yeo
发明人： Wen-Chin Lee , Yee-Chia Yeo
IPC分类号： H01L21/336 , H01L21/8244 , H01L27/11 , H01L29/00
CPC分类号： H01L27/11 , H01L27/1104
摘要： A semiconductor device comprises a substrate. In addition, the semiconductor device comprises an active region and an isolation region. The active region is in the substrate and comprises a semiconductor material. The isolation region is also in the substrate, adjacent the active region and comprises an insulating material. The active region and isolation region form a surface having a step therein. The semiconductor further comprises a dielectric material formed over the step. The dielectric material has a dielectric constant greater than about 8.
摘要翻译：半导体器件包括衬底。此外，半导体器件包括有源区和隔离区。有源区在衬底中并且包括半导体材料。隔离区也在衬底中，邻近有源区并且包括绝缘材料。有源区和隔离区形成其中具有台阶的表面。半导体还包括在该步骤上形成的电介质材料。电介质材料的介电常数大于约8。

105. 发明申请

US20050035409A1 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit 有权
标题翻译：集成电路中的应变通道晶体管和第二半导体元件的结构和方法
公开(公告)号：US20050035409A1
公开(公告)日：2005-02-17
申请号：US10729095
申请日：2003-12-05
申请人： Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
发明人： Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/01 , H01L29/78
CPC分类号： H01L29/7848 , H01L21/26506 , H01L21/324 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.
摘要翻译：半导体芯片包括其中设置有第一和第二有源区的半导体衬底126。电阻器124形成在第一有源区域中，并且电阻器124包括形成在两个端子136之间的掺杂区域128.应变沟道晶体管132形成在第二有源区域中。该晶体管包括第一和第二应力源141，该第一和第二应力器141形成在与基片相反的相邻的应变通道区域143之间。

106. 发明授权

US4596059A Automatic dust-removing eraser of a rolling-friction type for blackboard 失效
标题翻译：用于黑板的滚动摩擦型自动除尘橡皮擦
公开(公告)号：US4596059A
公开(公告)日：1986-06-24
申请号：US562184
申请日：1983-12-16
申请人： Wen-Chin Lee
发明人： Wen-Chin Lee
IPC分类号： B43L21/02 , B43L21/00
CPC分类号： B43L21/02
摘要： An automatic dust-removing eraser of a rolling-friction type for use on a blackboard includes: a casing body having an open section or cavity in the central portion; a plurality of different guiding slots vertically formed at both ends of the side walls defining the open section; a spare space provided at each end portion with an escape clack valve and a discharge door respectively disposed in the opposing side walls defining the spare spaces; a pair of supporting members each having integrally-linked parallel plates respectively secured in the guiding slots of the casing body; and a plurality of master rollers and slave rollers mounted within the cavity in interrelated coupling; so that, by means of the matched rotation of the master and slave rollers and the unilateral check action effected from the supporting members, the chalk dust gathered by the master rollers over the surface of the blackboard is automatically removed through self-brushing and discharging action of the slave rollers.
摘要翻译：用于黑板上的滚动摩擦型自动除尘橡皮擦包括：壳体，其在中心部分具有开口部分或空腔; 多个不同的引导槽，垂直地形成在限定开放部分的侧壁的两端; 在每个端部设置有分别设置在限定备用空间的相对侧壁中的排气门和排放门的备用空间; 一对支撑构件，每个支撑构件具有分别固定在壳体主体的引导槽中的一体连接的平行板; 以及安装在所述腔内的相互联接的多个主辊和从动辊; 使得通过主从轮的匹配旋转和从支撑构件实现的单侧检查动作，由主辊聚集在黑板表面上的白垩粉尘通过自刷和排出动作自动去除的从动辊。

107. 发明授权

US09398733B2 Electromagnetic shielding composite 有权
标题翻译：电磁屏蔽复合材料
公开(公告)号：US09398733B2
公开(公告)日：2016-07-19
申请号：US13461006
申请日：2012-05-01
申请人： Cheng-Hsien Lin , Yao-Wen Bai , Wen-Chin Lee , Rui Zhang , Kai-Li Jiang , Chen Feng
发明人： Cheng-Hsien Lin , Yao-Wen Bai , Wen-Chin Lee , Rui Zhang , Kai-Li Jiang , Chen Feng
IPC分类号： H05K9/00 , B29C70/88 , B29K105/16
CPC分类号： H05K9/009 , B29C70/882 , B29C70/885 , B29K2105/167 , C08L2666/76 , H05K9/0083 , H05K9/0088 , Y10S977/784 , Y10S977/789 , Y10T428/24132 , Y10T428/249979
摘要： An electromagnetic shielding composite includes a polymer and a carbon nanotube film structure. The carbon nanotube structure includes a number of carbon nanotubes disposed in the polymer. The number of carbon nanotubes are parallel with each other.
摘要翻译：电磁屏蔽复合材料包括聚合物和碳纳米管薄膜结构。碳纳米管结构包括设置在聚合物中的多个碳纳米管。碳纳米管的数量彼此平行。

108. 发明授权

US09005842B2 Proton exchange membrane composition 有权
标题翻译：质子交换膜组成
公开(公告)号：US09005842B2
公开(公告)日：2015-04-14
申请号：US12546004
申请日：2009-08-24
申请人： Tsung-Hsiung Wang , Jing-Pin Pan , Wen-Chin Lee , Yueh-Wei Lin , Ya-Tin Hsu , Chung-Liang Chang , Chih-Jer Shih
发明人： Tsung-Hsiung Wang , Jing-Pin Pan , Wen-Chin Lee , Yueh-Wei Lin , Ya-Tin Hsu , Chung-Liang Chang , Chih-Jer Shih
IPC分类号： H01M8/10 , C08G73/12 , C08J5/22 , C08L79/08 , H01M4/92
CPC分类号： H01M8/1041 , C08G73/12 , C08J5/2256 , C08J2371/12 , C08J2400/202 , C08L79/085 , H01M4/92 , H01M8/1023 , H01M8/1025 , H01M8/1027 , H01M8/103 , H01M8/1032 , H01M8/1048 , Y02E60/521
摘要： Proton exchange membrane compositions having high proton conductivity are provided. The proton exchange membrane composition includes a hyper-branched polymer, wherein the hyper-branched polymer has a DB (degree of branching) of more than 0.5. A polymer with high ion conductivity is distributed uniformly over the hyper-branched polymer, wherein the hyper-branched polymer has a weight ratio equal to or more than 5 wt %, based on the solid content of the proton exchange membrane composition.
摘要翻译：提供了具有高质子传导性的质子交换膜组合物。质子交换膜组合物包括超支化聚合物，其中超支化聚合物具有大于0.5的DB（支化度）。具有高离子电导率的聚合物均匀地分布在超支化聚合物上，其中基于质子交换膜组合物的固体含量，超支化聚合物的重量比等于或大于5重量％。

109. 发明授权

US08377252B2 Apparatus for spraying etchant onto printed circuit board 有权
标题翻译：用于在印刷电路板上喷涂蚀刻剂的装置
公开(公告)号：US08377252B2
公开(公告)日：2013-02-19
申请号：US11614362
申请日：2006-12-21
申请人： Wen-Chin Lee , Cheng-Hsien Lin
发明人： Wen-Chin Lee , Cheng-Hsien Lin
IPC分类号： H01B13/00 , B44C1/22 , C23F1/00
CPC分类号： C23F1/08 , H05K3/068 , H05K2203/075
摘要： The present invention relates to an apparatus for spraying an etchant and a method for manufacturing a printed circuit board. In one exemplary embodiment the apparatus includes a manifold, a plurality of feed pipes in fluid communication with the manifold, each of the feed pipes having a plurality of spray nozzles mounted thereon, the feed pipes cooperatively constitute a spray region, and a pressure-boosting device configured for increasing a spray pressure of the spray nozzles which are located at a central area of the spray region. The apparatus can overcome “the puddle effect” on an upper surface of the printed circuit board.
摘要翻译：本发明涉及喷涂蚀刻剂的设备和印刷电路板的制造方法。在一个示例性实施例中，设备包括歧管，与歧管流体连通的多个进料管，每个进料管具有安装在其上的多个喷嘴，进料管协同地构成喷射区域，并且加压该装置被配置为增加位于喷射区域的中心区域处的喷嘴的喷雾压力。该装置可以克服印刷电路板的上表面上的水坑效应。

110. 发明授权

US08101266B2 Multilayer printed circuit board 有权
标题翻译：多层印刷电路板
公开(公告)号：US08101266B2
公开(公告)日：2012-01-24
申请号：US12135842
申请日：2008-06-09
申请人： Wen-Chin Lee , Cheng-Hsien Lin
发明人： Wen-Chin Lee , Cheng-Hsien Lin
IPC分类号： H01K1/00
CPC分类号： H05K3/4641 , H05K3/386 , H05K2201/0382 , Y10S428/901 , Y10T428/24917
摘要： A multilayer printed circuit board includes a first printed circuit board, a second printed circuit board, an adhesive film, and a function layer. The adhesive film is sandwiched between the first printed circuit board and the second printed circuit board. The function layer is disposed between the first printed circuit board and the second printed circuit board for blocking water from passing therethrough and for screening electromagnetic interference between the first printed circuit board and the second printed circuit board.
摘要翻译：多层印刷电路板包括第一印刷电路板，第二印刷电路板，粘合膜和功能层。粘合膜夹在第一印刷电路板和第二印刷电路板之间。功能层设置在第一印刷电路板和第二印刷电路板之间，用于阻止水从其中通过，并用于屏蔽第一印刷电路板和第二印刷电路板之间的电磁干扰。

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