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101. 发明申请

US20120261776A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES 有权
标题翻译：用于提供插入层的磁性层的方法和系统，用于旋转传递扭矩记忆
公开(公告)号：US20120261776A1
公开(公告)日：2012-10-18
申请号：US13332328
申请日：2011-12-20
申请人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
发明人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
IPC分类号： H01L29/82 , H01L21/18
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。自由层具有固有阻尼常数。非磁性间隔层位于被钉扎层和自由层之间。所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

102. 发明授权

US08218263B2 Write head with different upper and lower yoke lengths and methods for making the same 有权
标题翻译：具有不同的上，下磁轭长度的写头和制造相同的方法
公开(公告)号：US08218263B2
公开(公告)日：2012-07-10
申请号：US12341908
申请日：2008-12-22
申请人： Donald G. Allen , Wen-Chien David Hsiao , Edward Hin Pong Lee , Jennifer Leung , Vladimir Nikitin
发明人： Donald G. Allen , Wen-Chien David Hsiao , Edward Hin Pong Lee , Jennifer Leung , Vladimir Nikitin
IPC分类号： G11B5/127 , H01L43/12
CPC分类号： G11B5/1278 , G11B5/17 , G11B5/3116 , G11B5/3123
摘要： According to one embodiment, a system comprises an upper yoke having a first length defined between a pole tip thereof and a back gap thereof. In addition, the system includes a lower yoke having a second length defined between a pole tip thereof and a back gap thereof, the second length being greater than the first length. Also, the system includes coil turns in the upper and lower yokes. Additional systems and methods are also presented.
摘要翻译：根据一个实施例，一种系统包括上轭，其具有限定在其极端之间的第一长度和其后间隙。此外，该系统包括具有限定在其极端和其后间隙之间的第二长度的下轭，第二长度大于第一长度。而且，该系统包括上轭和下轭的线圈匝。还介绍了其他系统和方法。

103. 发明申请

US20120168885A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES 有权
标题翻译：用于提供插入层的磁性层的方法和系统，用于旋转传递扭矩记忆
公开(公告)号：US20120168885A1
公开(公告)日：2012-07-05
申请号：US13011849
申请日：2011-01-21
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO. The magnetic layers are exchange coupled.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。被钉扎层和自由层中的至少一个包括磁性子结构。磁性子结构包括与至少一个插入层交错的至少两个磁性层。每个插入层包括Cr，Ta，Ti，W，Ru，V，Cu，Mg，氧化铝和MgO中的至少一种。磁层交换耦合。

104. 发明授权

US08186040B2 Methods for creating slanted perpendicular magnetic pole via metal liftoff 有权
标题翻译：通过金属剥离产生倾斜垂直磁极的方法
公开(公告)号：US08186040B2
公开(公告)日：2012-05-29
申请号：US12341893
申请日：2008-12-22
申请人： Amanda Baer , Wen-Chien David Hsiao , Vladimir Nikitin , Trevor W. Olson , Yuan Yao
发明人： Amanda Baer , Wen-Chien David Hsiao , Vladimir Nikitin , Trevor W. Olson , Yuan Yao
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method in one embodiment includes forming a resist structure above an upper surface of a substrate, wherein a portion of the upper surface of the substrate is a shaping layer, wherein the resist structure has an undercut; depositing a layer of magnetic material above exposed regions of the substrate, wherein a portion of the layer of magnetic material tapers towards the substrate as it approaches the undercut; removing the resist structure; and forming a write pole above the layer of magnetic material. Additional methods are disclosed.
摘要翻译：在一个实施例中的方法包括在基板的上表面上方形成抗蚀剂结构，其中基板的上表面的一部分是成形层，其中抗蚀剂结构具有底切; 在衬底的暴露区域上方沉积一层磁性材料，其中磁性材料层的一部分在接近底切时朝着衬底逐渐变细; 去除抗蚀剂结构; 并在磁性材料层之上形成写入极。公开了另外的方法。

105. 发明授权

US08159866B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08159866B2
公开(公告)日：2012-04-17
申请号：US12609764
申请日：2009-10-30
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C11/00 , G11C5/08 , G11C11/14 , G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

106. 发明授权

US08085497B2 Method of multi-angled bump processing for magnetic pole fabrication and systems thereof 有权
标题翻译：用于磁极制造的多角度凸块加工方法及其系统
公开(公告)号：US08085497B2
公开(公告)日：2011-12-27
申请号：US12341834
申请日：2008-12-22
申请人： Wen-Chien David Hsiao , Vladimir Nikitin , Aron Pentek , Sue Siyang Zhang , Yi Zheng
发明人： Wen-Chien David Hsiao , Vladimir Nikitin , Aron Pentek , Sue Siyang Zhang , Yi Zheng
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/3163
摘要： A system according to one embodiment includes a magnetic pole; a bump structure above the pole, the bump structure having a first surface oriented at a first angle between 1° and 89° from a plane of deposition of the pole, and a second surface oriented at a second angle between 1° and 89° from the plane of deposition of the pole, wherein the second angle is greater than the first angle; and a shield above the bump structure. A method according to one embodiment includes forming a bump layer above a magnetic pole; removing a portion of the bump layer for forming a step therein; and milling the bump layer for defining thereon a first surface oriented at a first angle between 1° and 89° from a plane of deposition of the bump layer, and a second surface oriented at a second angle between 1° and 89° from the plane of deposition of the bump layer, wherein the second angle is greater than the first angle.
摘要翻译：根据一个实施例的系统包括磁极; 所述凸起结构具有从所述极的沉积平面以1°至89°之间的第一角度定向的第一表面，并且所述第一表面以与所述极的沉积的平面成1°至89°之间的第二角度定向所述极的沉积平面，其中所述第二角度大于所述第一角度; 和凸块结构之上的屏蔽。根据一个实施例的方法包括在磁极上形成凸起层; 去除所述凸起层的一部分以在其中形成台阶; 并且研磨所述凸起层，以在其上限定从凸起层的沉积平面以1°至89°之间的第一角度定向的第一表面，以及从该平面以1°至89°之间的第二角度定向的第二表面所述凸起层的沉积，其中所述第二角度大于所述第一角度。

107. 发明申请

US20110076784A1 Fabrication of Magnetic Element Arrays 审中-公开
标题翻译：磁性元件阵列的制作
公开(公告)号：US20110076784A1
公开(公告)日：2011-03-31
申请号：US12569851
申请日：2009-09-29
申请人： David Druist , Vladimir Nikitin , Dmytro Apalkov
发明人： David Druist , Vladimir Nikitin , Dmytro Apalkov
IPC分类号： H01L21/28
CPC分类号： H01L27/228 , H01L43/12
摘要： Techniques for fabricating an array of magnetic elements to form memory and other devices with a high areal density.
摘要翻译：用于制造磁性元件阵列以形成具有高面密度的存储器和其它器件的技术。

108. 发明授权

US07848054B2 Perpendicular magnetic write head having a corner notched conformal, wrap-around, trailing magnetic shield for reduced adjacent track interference 有权
标题翻译：垂直磁性写头，具有角切口的保形，环绕，后退磁屏蔽，减少相邻的轨道干扰
公开(公告)号：US07848054B2
公开(公告)日：2010-12-07
申请号：US11744054
申请日：2007-05-03
申请人： Wen-Chien David Hsiao , Yimin Hsu , Vladimir Nikitin , Aron Pentek , Yi Zheng
发明人： Wen-Chien David Hsiao , Yimin Hsu , Vladimir Nikitin , Aron Pentek , Yi Zheng
IPC分类号： G11B5/127
CPC分类号： G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , G11B5/3163
摘要： A perpendicular magnetic write head having a conformal wrap around trailing shield. The write head includes a write pole that can be configured with a trapezoidal shape as viewed from the Air Bearing Surface (ABS) and which includes a wrap around trailing magnetic shield. The magnetic shield has a trailing portion that is separated from the leading edge of the write pole by a non-magnetic trailing gap, and has side shield portions that are separated from first and second side portions of the write pole by first and second non-magnetic side gaps. The magnetic shield can be configured with notches at either side of the trailing portion of magnetic shield. These notches can extend in the trailing direction by a distance that is preferably ¼ to 1 times the trailing gap thickness. The width of the straight, trailing portion of the shield is preferable ½ to 1 times of the main pole width.
摘要翻译：垂直磁性写头，其具有围绕后屏蔽的保形包裹。写入头包括写入极，其可以被配置为从空气轴承表面（ABS）观察到的梯形形状，并且包括围绕尾部磁屏蔽的包裹。磁屏蔽具有通过非磁性拖尾间隔与写入极的前端分离的后部，并且具有通过第一和第二非间隙与写入极的第一和第二侧部分离的侧面屏蔽部分，磁侧隙。磁屏蔽可以在磁屏蔽的尾部的任一侧配置有凹口。这些凹口可以在拖尾方向上延伸一段距离，优选为后缘间隙厚度的1/4至1倍。屏蔽的直的后部的宽度优选为主极宽度的1/2至1倍。

109. 发明授权

US07788796B2 Method FPR manufacturing a magnetic write head 有权
标题翻译：磁写头制造方法
公开(公告)号：US07788796B2
公开(公告)日：2010-09-07
申请号：US11611824
申请日：2006-12-15
申请人： Wen-Chien David Hsiao , Ming Jiang , Vladimir Nikitin , Aron Pentek , Yi Zheng
发明人： Wen-Chien David Hsiao , Ming Jiang , Vladimir Nikitin , Aron Pentek , Yi Zheng
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3169 , G11B5/1278 , G11B5/3163 , G11B5/3166 , G11B5/3173 , G11B5/6005 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetic write head using an electrical lapping guide to carefully control critical dimensions during a lapping operation used to define an air bearing surface. The lapping guide is photolithograhically patterned in a common photolithographic step with another write head structure so that special relation between the lapping guide and critical dimensions of the write head structure can be carefully maintained. The electrical lapping guide can be patterned in a common photolithographic step as the write pole so that the location of the flare point can be carefully controlled with respect to the location of the lapping guide. A stitched flare structure can also be built together with the electrical lapping guide, then a self-aligned shield can be further built over this stitched flare structure so that both flare point and shield throat can be controlled tightly together by this electrical lapping guide during lapping process.
摘要翻译：一种用于在用于限定空气轴承表面的研磨操作期间使用电研磨引导件来构造磁性写入头以小心地控制临界尺寸的方法。研磨导轨在具有另一写头结构的普通光刻步骤中以光刻方式进行图案化，从而可以仔细地保持研磨引导件与写头结构的临界尺寸之间的特殊关系。电研磨引导件可以以普通光刻步骤图案化为写极，使得可以相对于研磨导轨的位置仔细地控制扩张点的位置。缝合的火炬结构也可以与电气研磨导轨一起构建，然后可以在该缝合的火炬结构上进一步构建自对准屏蔽，使得在研磨过程中，电气研磨引导件可以将喇叭口和屏蔽喉部两者紧密地一起控制处理。

110. 发明申请

US20100163523A1 FORMATION OF LOW RESISTANCE DAMASCENE COILS 失效
标题翻译：形成低电阻大线圈
公开(公告)号：US20100163523A1
公开(公告)日：2010-07-01
申请号：US12707652
申请日：2010-02-17
申请人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin , Sue Siyang Zhang
发明人： Daniel Wayne Bedell , David Patrick Druist , Edward Hin Pong Lee , Jennifer Ai-Ming Loo , Vladimir Nikitin , Sue Siyang Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/3123 , Y10T29/49043 , Y10T29/4906 , Y10T29/49064
摘要： In one embodiment and method of the present invention, a coil of a write head is created by forming a P1 pedestal layer and a back gap layer and further forming a coil pattern consistent with the coil to be formed and insulator spacers dispersed in the coil pattern, using a non-damascene process, thereafter the coil is formed by plating using a damascene process.
摘要翻译：在本发明的一个实施例和方法中，通过形成P1基座层和后间隙层，并且进一步形成与要形成的线圈一致的线圈图案并且将绝缘体间隔物分散在线圈图案中，形成写入头的线圈，使用非镶嵌工艺，然后通过使用镶嵌工艺电镀形成线圈。

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