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1. 发明申请

US20120170362A1 METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES 有权
标题翻译：用于提供旋转传动扭矩磁记录中可用的双磁性隧道结的方法和系统
公开(公告)号：US20120170362A1
公开(公告)日：2012-07-05
申请号：US13415261
申请日：2012-03-08
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

2. 发明授权

US08422285B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08422285B2
公开(公告)日：2013-04-16
申请号：US13033021
申请日：2011-02-23
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith , Steven M. Watts , David Druist
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith , Steven M. Watts , David Druist
IPC分类号： G11C11/14
CPC分类号： G11C11/5607 , G01R33/098 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。固定层是非磁性层，并且是自固定的。在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。磁结有两个以上的稳定状态。在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。

3. 发明授权

US08456882B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08456882B2
公开(公告)日：2013-06-04
申请号：US13415261
申请日：2012-03-08
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C5/08 , G11C11/06 , G11C11/14 , G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

4. 发明申请

US20110141804A1 METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES 有权
标题翻译：用于提供旋转传动扭矩磁记录中可用的双磁性隧道结的方法和系统
公开(公告)号：US20110141804A1
公开(公告)日：2011-06-16
申请号：US13033021
申请日：2011-02-23
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith , Steven M. Watts , David Druist
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith , Steven M. Watts , David Druist
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： G11C11/5607 , G01R33/098 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。固定层是非磁性层，并且是自固定的。在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。磁结有两个以上的稳定状态。在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。

5. 发明申请

US20110102948A1 METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES 有权
标题翻译：用于提供旋转传动扭矩磁记录中可用的双磁性隧道结的方法和系统
公开(公告)号：US20110102948A1
公开(公告)日：2011-05-05
申请号：US12609764
申请日：2009-10-30
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11B5/33
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

6. 发明授权

US08159866B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08159866B2
公开(公告)日：2012-04-17
申请号：US12609764
申请日：2009-10-30
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C11/00 , G11C5/08 , G11C11/14 , G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

7. 发明申请

US20110076784A1 Fabrication of Magnetic Element Arrays 审中-公开
标题翻译：磁性元件阵列的制作
公开(公告)号：US20110076784A1
公开(公告)日：2011-03-31
申请号：US12569851
申请日：2009-09-29
申请人： David Druist , Vladimir Nikitin , Dmytro Apalkov
发明人： David Druist , Vladimir Nikitin , Dmytro Apalkov
IPC分类号： H01L21/28
CPC分类号： H01L27/228 , H01L43/12
摘要： Techniques for fabricating an array of magnetic elements to form memory and other devices with a high areal density.
摘要翻译：用于制造磁性元件阵列以形成具有高面密度的存储器和其它器件的技术。

8. 发明授权

US08704547B2 Method and system for providing spin transfer based logic devices 有权
标题翻译：提供基于自旋转移的逻辑器件的方法和系统
公开(公告)号：US08704547B2
公开(公告)日：2014-04-22
申请号：US13562038
申请日：2012-07-30
申请人： Dmytro Apalkov , David Druist
发明人： Dmytro Apalkov , David Druist
IPC分类号： G06F7/38
CPC分类号： H03K19/20 , Y10T29/49117
摘要： A logic device is described. The logic device includes magnetic input/channel regions, magnetic sensor region(s), and sensor(s) coupled with the magnetic sensor region(s). Each magnetic input/channel region is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that domain wall(s) reside in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to the magnetic input region(s). The magnetic input/channel region(s) include FexCoyNizM1q1M2q2, with x+y+z+q1+q2=1, x, y, z, q1, q2 at least zero and M1 and M2 being nonmagnetic.
摘要翻译：描述逻辑设备。逻辑器件包括磁性输入/沟道区域，磁性传感器区域和与磁性传感器区域耦合的传感器。每个磁性输入/沟道区域在第一方向上被磁偏置。磁传感器区域在不同于第一方向的第二方向上被磁偏置，使得如果逻辑器件处于静止状态，则域壁驻留在磁性输入/沟道区域中。传感器基于磁传感器区域的磁状态输出信号。输入/通道区域和磁性传感器区域被配置为使得响应于提供给磁性输入区域的逻辑信号，畴壁可以移动到磁性传感器区域中。磁性输入/通道区域包括FexCoyNizM1q1M2q2，x + y + z + q1 + q2 = 1，x，y，z，q1，q2至少为零，M1和M2为非磁性。

9. 发明授权

US08248100B2 Method and system for providing spin transfer based logic devices 有权
标题翻译：提供基于自旋转移的逻辑器件的方法和系统
公开(公告)号：US08248100B2
公开(公告)日：2012-08-21
申请号：US13089605
申请日：2011-04-19
申请人： Dmytro Apalkov , David Druist
发明人： Dmytro Apalkov , David Druist
IPC分类号： G06F7/38 , H01L25/00
CPC分类号： H03K19/16 , H03K19/1733 , Y10T29/49002
摘要： A method and system for providing a logic device are described. The logic device includes a plurality of magnetic input/channel regions, at least one magnetic sensor region, and at least one sensor coupled with the at least one magnetic sensor region. Each of the magnetic input/channel regions is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that at least one domain wall resides in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to at least a portion of the magnetic input regions.
摘要翻译：描述了用于提供逻辑设备的方法和系统。逻辑器件包括多个磁性输入/沟道区域，至少一个磁性传感器区域以及与该至少一个磁性传感器区域耦合的至少一个传感器。每个磁性输入/沟道区域在第一方向上被磁偏置。磁传感器区域在不同于第一方向的第二方向上被磁偏置，使得如果逻辑器件处于静止状态，至少一个畴壁驻留在磁性输入/沟道区域中。传感器基于磁传感器区域的磁状态输出信号。输入/通道区域和磁性传感器区域被配置为使得响应于提供给磁性输入的至少一部分的逻辑信号，畴壁可以移动到磁性传感器区域地区。

10. 发明申请

US20110254585A1 METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER BASED LOGIC DEVICES 有权
标题翻译：用于提供基于转移的转移逻辑器件的方法和系统
公开(公告)号：US20110254585A1
公开(公告)日：2011-10-20
申请号：US13089605
申请日：2011-04-19
申请人： Dmytro Apalkov , David Druist
发明人： Dmytro Apalkov , David Druist
IPC分类号： H03K19/173 , H05K13/00
CPC分类号： H03K19/16 , H03K19/1733 , Y10T29/49002
摘要： A method and system for providing a logic device are described. The logic device includes a plurality of magnetic input/channel regions, at least one magnetic sensor region, and at least one sensor coupled with the at least one magnetic sensor region. Each of the magnetic input/channel regions is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that at least one domain wall resides in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to at least a portion of the magnetic input regions.
摘要翻译：描述了用于提供逻辑设备的方法和系统。逻辑器件包括多个磁性输入/沟道区域，至少一个磁性传感器区域以及与该至少一个磁性传感器区域耦合的至少一个传感器。每个磁性输入/沟道区域在第一方向上被磁偏置。磁传感器区域在不同于第一方向的第二方向上被磁偏置，使得如果逻辑器件处于静止状态，至少一个畴壁驻留在磁性输入/沟道区域中。传感器基于磁传感器区域的磁状态输出信号。输入/通道区域和磁性传感器区域被配置为使得响应于提供给磁性输入的至少一部分的逻辑信号，畴壁可以移动到磁性传感器区域地区。

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