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101. 发明申请

US20050186428A1 Particle removing member of substrate processing equipment 有权
标题翻译：基板加工设备的颗粒去除构件
公开(公告)号：US20050186428A1
公开(公告)日：2005-08-25
申请号：US11063546
申请日：2005-02-24
申请人： Koichi Hashimoto , Yoshio Ota
发明人： Koichi Hashimoto , Yoshio Ota
IPC分类号： B08B1/02 , B05D1/00 , B08B7/00 , B32B9/04 , H01L21/02 , H01L21/304 , H01L21/677 , H01L21/68 , H05K3/26
CPC分类号： B08B7/0028 , H05K3/26 , Y10T428/31504
摘要： The present invention intends to provide a particle removing member of a substrate processing equipment which can be assuredly conveyed into the substrate processing equipment and can conveniently and assuredly remove an adhered foreign matter, and a particle removing method of a substrate processing equipment that uses the particle removing member. A particle removing member of a substrate processing equipment comprising a particle removing layer in which a time necessary for a signal intensity of free induction decay measured by a pulse NMR-Solid Echo method to decay to 37% of an initial value at a measurement temperature of 100 degrees centigrade is 1000 μs or less, in particular, a particle removing sheet comprising the above-constituted particle removing layer on a support, and a conveying member with particle removing function formed by adhering the above-constituted particle removing sheet on the conveying member, and furthermore a method of removing particle of a substrate processing equipment, comprising conveying the above-constituted conveying member with particle removing function into a substrate processing equipment.
摘要翻译：本发明旨在提供一种能够确实地输送到基板加工设备中的基板加工设备的颗粒除去部件，并且能够方便且可靠地除去附着的异物，以及使用该粒子的基板加工设备的粒子除去方法去除构件。一种基板处理设备的颗粒去除部件，其包括除粒层，其中通过脉冲NMR固体回波法测量的自由感应衰减的信号强度所需的时间在测量温度下衰减到初始值的37％ 100摄氏度为1000微升以下，特别是在支撑体上具有上述颗粒除去层的颗粒除去片，以及具有除去上述功能的传送部件，其通过将上述颗粒除去片粘接在传送部件上以及除去基板加工设备的颗粒的方法，包括将具有颗粒去除功能的上述传送部件输送到基板处理设备中。

102. 发明申请

US20050042410A1 Preform precursor for fiber-reinforced composite material, preform for fiber-reinforced composite material, and method of manufacturing the precursor and the preform 有权
标题翻译：纤维增强复合材料用预成型体前体，纤维增强复合材料用预成型体以及前体和预成型体的制造方法
公开(公告)号：US20050042410A1
公开(公告)日：2005-02-24
申请号：US10489860
申请日：2002-08-12
申请人： Hideki Sakonjo , Masayasu Ishibashi , Takeshi Tanamura , Koichi Hashimoto , Tetsuro Hirokawa
发明人： Hideki Sakonjo , Masayasu Ishibashi , Takeshi Tanamura , Koichi Hashimoto , Tetsuro Hirokawa
IPC分类号： B29B11/16 , C08J5/04 , C08L101/00 , D04H1/46 , B32B5/12
CPC分类号： B29B11/16 , Y10T156/1043 , Y10T428/218 , Y10T428/24074
摘要： Technical Field of the Invention: A structural member required to have a prescribed strength in an aircraft, an automobile, a vessel or a constructed structure, etc., especially in a circular bore portion or a curved portion such as a wing or a body of an aircraft. Technical Problem: A preform for a fiber-reinforced composite material to be used as a structural member of a fiber-reinforced composite material having a curved portion is to be manufactured through a low-cost mass production. Means of Solving the Problem A preform for a fiber-reinforced composite material (20) including a bent portion (22) along a curved line for bending (12), a flange portion (24) corresponding to an outer circumferential portion (14) and a semi-cylindrical portion (26) formed by bending an inner circumferential portion (16), based on a precursor of a preform for a fiber-reinforced composite material (10) provided with the curved line for bending (12) located in a flat plane or a curved plane region having a predetermined extension; the outer circumferential portion (14) corresponding to a region (a) where a plurality of reinforced fibers is partly disposed in parallel along the curved line for bending (12), and the inner circumferential portion (16) corresponding to the section (b) constituted solely of another plurality of reinforced fibers disposed throughout the entire area, so as to intersect the former plurality of reinforced fibers at a predetermined angle in the region (a). Principal Use: An aircraft, an automobile, a vessel, a constructed structure, etc. Especially a window frame or a fuel inlet of an aircraft.
摘要翻译：技术领域本发明涉及一种在航空器，汽车，船舶或构造结构等中具有规定强度的结构构件，特别是在圆形孔部分或弯曲部分，例如机翼或主体一架飞机技术问题：作为具有弯曲部分的纤维增强复合材料的结构构件的纤维增强复合材料的预成型体将通过低成本的批量生产来制造。解决问题的方案用于纤维增强复合材料（20）的预成型件包括沿弯曲曲线的弯曲部分（22），与外周部分（14）对应的凸缘部分（24）和基于用于纤维增强复合材料（10）的预成型体的前体，弯曲内圆周部分（16）形成的半圆柱形部分（26），其设置有位于平面中的弯曲曲线（12）平面或具有预定延伸部的曲面区域; 对应于多个增强纤维沿弯曲曲线部分平行设置的区域（a）的外圆周部分（14）和对应于部分（b）的内圆周部分（16）仅由设置在整个区域的另外多个增强纤维构成，以便在区域（a）中以预定的角度与前面的多根增强纤维相交。主要用途：飞机，汽车，船舶，建筑结构等。特别是飞机的窗框或燃料入口。

103. 发明授权

US06801735B2 Image forming apparatus which can clean auxiliary member erasing image traces 失效
标题翻译：可以清洁辅助部件擦除图像痕迹的图像形成装置
公开(公告)号：US06801735B2
公开(公告)日：2004-10-05
申请号：US10215016
申请日：2002-08-09
申请人： Yoshiyuki Komiya , Fumiteru Gomi , Koichi Hashimoto
发明人： Yoshiyuki Komiya , Fumiteru Gomi , Koichi Hashimoto
IPC分类号： G03G1530
CPC分类号： G03G21/0064 , G03G2215/022 , G03G2221/0005
摘要： When image forming is repeated with cleanerless image forming apparatus “positive ghost” which means that the preceding image is slightly left occurs because residual toner is not recovered by developing means. Even if an image forming apparatus with an electrically conductive brush or auxiliary means repeats image forming or continuously forms image with a high image ratio, resistance of the brush increases because residual toner is deposited on the electrically conductive brush. In the results, advantages of the electrically conductive brush which erases traces of the preceding image are lost. Therefore, they are provided, an image forming apparatus which does not let image traces leave and an image forming apparatus which prevents the resistance of auxiliary means and cleans auxiliary means.
摘要翻译：当用无清洁器的图像形成装置“正重影”重复图像形成时，这意味着由于残留的调色剂不能通过显影装置回收，所以出现了前一幅图像。即使具有导电刷或辅助装置的图像形成装置重复图像以高图像比例形成或连续地形成图像，因为残留的调色剂沉积在导电刷上，所以电刷的电阻增加。在结果中，擦除前一图像的迹线的导电刷的优点被丢失。因此，提供了不留下图像迹线的图像形成装置和防止辅助装置的阻力并且清除的图像形成装置辅助手段。

104. 发明授权

US06711998B2 Hybrid stencil printing apparatus, method for controlling hybrid stencil printing apparatus and computer-readable recording medium recording program for the same 失效
标题翻译：混合模版印刷装置，用于控制混合模版印刷装置的方法和用于其的计算机可读记录介质记录程序
公开(公告)号：US06711998B2
公开(公告)日：2004-03-30
申请号：US09983345
申请日：2001-10-24
申请人： Koichi Hashimoto
发明人： Koichi Hashimoto
IPC分类号： B41F1510
CPC分类号： B41L13/06
摘要： A hybrid stencil printing apparatus comprises: a stencil-making/printing unit configured to perforate a stencil sheet corresponding to a desired image, to wind the stencil sheet around an outer peripheral surface of a print drum, and to transfer a printing medium to the print drum with pressure and the printing medium is printed; an other-method image-formation unit configured to print the printing medium transferred on the same transfer passage as the stencil-making/printing unit according to a different printing method from the stencil-making/printing unit; and an image-formation unit selection-unit configured to input an original digital image, to determine a attributes of each image portion of the inputted original digital image, and to allocate each image portion selectively to the stencil-making/printing unit or the other-method image-formation unit based on the determination result.
摘要翻译：混合模版印刷设备包括：模版印刷单元，其被配置为对应于期望图像的孔版纸进行穿孔，将所述蜡纸卷绕在印刷鼓的外周表面上，并将印刷介质转印到所述印刷品上滚筒压力和打印介质打印; 另一方法图像形成单元，被配置为根据与所述模版/印刷单元不同的打印方法将与所述模版/印刷单元相同的传送通道上传送的打印介质打印; 以及图像形成单元选择单元，被配置为输入原始数字图像，以确定输入的原始数字图像的每个图像部分的属性，并且将每个图像部分选择性地分配给模板制作/打印单元或其他 - 方法图像形成单元。

105. 发明授权

US06420095B1 Manufacture of semiconductor device using A-C anti-reflection coating 失效
标题翻译：使用A-C抗反射涂层制造半导体器件
公开(公告)号：US06420095B1
公开(公告)日：2002-07-16
申请号：US09466830
申请日：1999-12-20
申请人： Eiichi Kawamura , Teruyoshi Yao , Nobuhisa Naori , Koichi Hashimoto , Masaharu Kobayashi , Tadasi Oshima
发明人： Eiichi Kawamura , Teruyoshi Yao , Nobuhisa Naori , Koichi Hashimoto , Masaharu Kobayashi , Tadasi Oshima
IPC分类号： G03F700
CPC分类号： G03F7/091
摘要： A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity Isw=I&dgr;/Iave to 0.2 or smaller, where Iave is an average value of light intensity in the photoresist film, and I&dgr; is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在光反射表面上形成透明氧化膜; 在透明膜的表面上形成抗反射性的a-c膜; 并在抗反射膜的表面上涂覆光致抗蚀剂膜并对抗蚀剂膜进行构图，其中选择抗反射膜和透明膜的厚度，以将驻波强度Isw = Idelta / Iave设定为0.2 或更小，其中Iave是光致抗蚀剂膜中的光强度的平均值，Idelta是光强度变化的幅度。可以在具有小尺寸变化和高精度的高反射性基板上形成精细图案。

106. 发明授权

US06376388B1 Dry etching with reduced damage to MOS device 失效
标题翻译：干蚀刻，减少对MOS器件的损坏
公开(公告)号：US06376388B1
公开(公告)日：2002-04-23
申请号：US08787451
申请日：1997-01-22
申请人： Koichi Hashimoto , Daisuke Matsunaga , Masaaki Aoyama
发明人： Koichi Hashimoto , Daisuke Matsunaga , Masaaki Aoyama
IPC分类号： H01L21302
CPC分类号： H01L21/0332 , H01L21/28123 , H01L21/32136 , H01L21/76838 , Y10S438/926
摘要： A method of manufacturing a semiconductor device having an insulated gate type field effect transistor. A gate insulating film, a gate electrode layer having a predetermined area and facing the semiconductor substrate with the gate insulating film being interposed therebetween, an interlayer insulating film, and a wiring layer connected to the gate electrode layer, are formed on a semiconductor substrate in the order recited. A conductive material layer and a resist layer are formed on the wiring layer. The resist layer is patterned to form a resist mask forming a wiring pattern having an antenna ratio of about ten times or more of the predetermined area of the gate electrode layer. At least the conductive material layer is plasma-etched by using the resist mask as an etching mask, and thereafter, the resist mask is removed and the wiring layer is plasma-etched.
摘要翻译：一种制造具有绝缘栅型场效应晶体管的半导体器件的方法。栅极绝缘膜，具有预定面积的面对半导体衬底的栅电极层，栅极绝缘膜插入其间，层间绝缘膜和连接到栅极电极层的布线层形成在半导体衬底上命令叙述。在布线层上形成导电材料层和抗蚀剂层。对抗蚀剂层进行图案化以形成抗蚀剂掩模，形成天线比为栅电极层的预定面积的大约十倍或更多的布线图案。至少通过使用抗蚀剂掩模作为蚀刻掩模来等离子体蚀刻导电材料层，然后去除抗蚀剂掩模，并且对该布线层进行等离子体蚀刻。

107. 发明授权

US06285045B1 Semiconductor device with self-aligned contact and its manufacture 失效
标题翻译：具有自对准触点的半导体器件及其制造
公开(公告)号：US06285045B1
公开(公告)日：2001-09-04
申请号：US08890991
申请日：1997-07-10
申请人： Kazuo Itabashi , Osamu Tsuboi , Yuji Yokoyama , Kenichi Inoue , Koichi Hashimoto , Wataru Futo
发明人： Kazuo Itabashi , Osamu Tsuboi , Yuji Yokoyama , Kenichi Inoue , Koichi Hashimoto , Wataru Futo
IPC分类号： H01L2710
CPC分类号： H01L27/10852 , H01L21/76897 , H01L27/105 , H01L27/10805 , H01L27/10817 , H01L28/91
摘要： A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.
摘要翻译：一种半导体存储器件，包括：覆盖栅电极的上表面和侧表面的第一绝缘膜; 形成在覆盖所述第一绝缘膜的所述基板上的第二绝缘膜; 形成在所述第二绝缘膜上并到达所述杂质扩散区的一对接触孔; 嵌入在所述接触孔之一中的导电插塞; 第三绝缘膜，形成在覆盖所述导电插塞的所述第二绝缘膜上，并且在所述另一个接触孔上具有第一孔; 形成在第三绝缘膜上并通过第一孔和另一个接触孔连接到另一个杂质扩散区的位线; 覆盖位线的上表面和侧表面的第四绝缘膜; 与覆盖所述位线的侧面的所述第四绝缘膜对准的通过所述第三绝缘膜形成的第二孔; 存储电极，其形成为在所述位线上延伸，通过所述第三和第四绝缘膜与所述位线绝缘，并且通过所述第二孔电连接到所述导电插塞。

108. 发明授权

US6160294A Semiconductor device having an interconnection pattern for connecting among conductive portions of elements 失效
标题翻译：具有用于在元件的导电部分之间连接的互连图案的半导体器件
公开(公告)号：US6160294A
公开(公告)日：2000-12-12
申请号：US904540
申请日：1997-08-04
申请人： Koichi Hashimoto
发明人： Koichi Hashimoto
IPC分类号： H01L21/8238 , H01L21/8244 , H01L27/092 , H01L27/11 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/11 , H01L27/1104 , Y10S257/903
摘要： A semiconductor device of the present invention includes an insulating layer covering a plurality of semiconductor elements formed in a semiconductor layer, an opening portion formed in the insulating layer respective conductive portions of the plurality of semiconductor elements in the insulating layer, and a conductive pattern formed in the opening portion for connecting respective conductive portions of the plurality of semiconductor elements.
摘要翻译：本发明的半导体器件包括覆盖形成在半导体层中的多个半导体元件的绝缘层，在绝缘层中形成的绝缘层中的绝缘层中的多个半导体元件的导电部分中的开口部分和形成的导电图案在用于连接多个半导体元件的各导电部分的开口部分中。

109. 发明授权

US5913139A Method of manufacturing a semiconductor device with local interconnect of metal silicide 失效
标题翻译：制造具有金属硅化物的局部互连的半导体器件的方法
公开(公告)号：US5913139A
公开(公告)日：1999-06-15
申请号：US907637
申请日：1997-08-08
申请人： Koichi Hashimoto , Hiromi Hayashi
发明人： Koichi Hashimoto , Hiromi Hayashi
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8244 , H01L27/11 , H01L29/43 , H01L29/78
CPC分类号： H01L21/76895
摘要： A first metal silicide film is formed on an exposed silicon region of a substrate on which the silicon region and an insulating region are exposed. A metal film is deposited over the whole surface of the substrate covering the first metal silicide film, the metal film capable of being silicidized. A silicon film is deposited on the surface of the metal film. The silicon film and metal film are patterned to form a lamination pattern of the silicon film and metal film continuously extending from a partial area of the exposed silicon region to a partial area of the insulating region. The lamination pattern is heated to establish a silicidation reaction and form a second metal silicide layer.
摘要翻译：第一金属硅化物膜形成在其上露出硅区域和绝缘区域的衬底的暴露的硅区上。金属膜沉积在覆盖第一金属硅化物膜的基板的整个表面上，该金属膜能够被硅化。硅膜沉积在金属膜的表面上。对硅膜和金属膜进行图案化以形成从暴露的硅区域的局部区域连续延伸到绝缘区域的局部区域的硅膜和金属膜的层叠图案。层叠图案被加热以建立硅化反应并形成第二金属硅化物层。

110. 发明授权

US5779925A Plasma processing with less damage 失效
标题翻译：等离子处理损坏少
公开(公告)号：US5779925A
公开(公告)日：1998-07-14
申请号：US542622
申请日：1995-10-13
申请人： Koichi Hashimoto , Takeshi Kamata , Yukinobu Hikosaka , Akihiro Hasegawa
发明人： Koichi Hashimoto , Takeshi Kamata , Yukinobu Hikosaka , Akihiro Hasegawa
IPC分类号： H01L21/02 , H01L21/314 , H01L21/3205
CPC分类号： H01L28/82 , H01J37/32137 , H01L21/314 , H01L21/32051 , H01J2237/3347
摘要： A method of manufacturing a semiconductor device including the steps of: (a) transporting a semiconductor wafer into a plasma process system, the semiconductor wafer having a semiconductor layer, a field insulating film and a gate insulating film formed on the semiconductor layer, said gate insulating film having a breakdown voltage of B (V) and a thickness of 10 nm or thinner, a conductive layer of a structured antenna formed on the gate insulating film and the field insulating film, the conductive layer having an antenna ratio of 500 or higher, and an insulating material pattern formed on the conductive layer, the insulating material pattern having an opening with an aspect ratio larger than 1; and (b) processing the semiconductor wafer in plasma having an electron temperature of Te (eV) equal to or less than B. With this method, it is possible to prevent damages to a gate insulating film even during a fine pattern process.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：（a）将半导体晶片输送到等离子体处理系统中，所述半导体晶片具有形成在半导体层上的半导体层，场绝缘膜和栅极绝缘膜，所述栅极具有B（V）的击穿电压和10nm或更薄的厚度的绝缘膜，形成在栅极绝缘膜和场绝缘膜上的结构化天线的导电层，导电层的天线比率为500或更高以及形成在所述导电层上的绝缘材料图案，所述绝缘材料图案具有纵横比大于1的开口; 以及（b）在电子温度为Te（eV）等于或小于B的等离子体中处理半导体晶片。通过该方法，即使在精细图案处理中也可以防止对栅极绝缘膜的损坏。

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