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    • 1. 发明授权
    • Plasma processing with less damage
    • 等离子处理损坏少
    • US5779925A
    • 1998-07-14
    • US542622
    • 1995-10-13
    • Koichi HashimotoTakeshi KamataYukinobu HikosakaAkihiro Hasegawa
    • Koichi HashimotoTakeshi KamataYukinobu HikosakaAkihiro Hasegawa
    • H01L21/02H01L21/314H01L21/3205
    • H01L28/82H01J37/32137H01L21/314H01L21/32051H01J2237/3347
    • A method of manufacturing a semiconductor device including the steps of: (a) transporting a semiconductor wafer into a plasma process system, the semiconductor wafer having a semiconductor layer, a field insulating film and a gate insulating film formed on the semiconductor layer, said gate insulating film having a breakdown voltage of B (V) and a thickness of 10 nm or thinner, a conductive layer of a structured antenna formed on the gate insulating film and the field insulating film, the conductive layer having an antenna ratio of 500 or higher, and an insulating material pattern formed on the conductive layer, the insulating material pattern having an opening with an aspect ratio larger than 1; and (b) processing the semiconductor wafer in plasma having an electron temperature of Te (eV) equal to or less than B. With this method, it is possible to prevent damages to a gate insulating film even during a fine pattern process.
    • 一种制造半导体器件的方法,包括以下步骤:(a)将半导体晶片输送到等离子体处理系统中,所述半导体晶片具有形成在半导体层上的半导体层,场绝缘膜和栅极绝缘膜,所述栅极 具有B(V)的击穿电压和10nm或更薄的厚度的绝缘膜,形成在栅极绝缘膜和场绝缘膜上的结构化天线的导电层,导电层的天线比率为500或更高 以及形成在所述导电层上的绝缘材料图案,所述绝缘材料图案具有纵横比大于1的开口; 以及(b)在电子温度为Te(eV)等于或小于B的等离子体中处理半导体晶片。通过该方法,即使在精细图案处理中也可以防止对栅极绝缘膜的损坏。
    • 3. 发明授权
    • Storage container
    • 储存容器
    • US07828341B2
    • 2010-11-09
    • US11817574
    • 2006-03-30
    • Akihiro HasegawaHiroshi Mimura
    • Akihiro HasegawaHiroshi Mimura
    • B65D85/00
    • H01L21/67373Y10S292/11Y10T70/5261Y10T70/5279Y10T70/5327Y10T292/0848Y10T292/0854Y10T292/444
    • To provide a storage container which can inhibit and prevent generation of dust due to the motions of an advancing and retracting element, whose door element can be formed with a reduced space and thickness and which can prevent contamination of the articles accommodated therein, the storage container includes a container body 1 for storing precision substrates, a door element 10 that opens and closes the front of container body 1 and a locking mechanism 20 for locking and unlocking door element 10 that covers container body 1. Locking mechanism 20 is constructed of a rotary plate 21 that is supported by door element 10, a first advancing and retracting plate 26 that, in accordance with the rotation of rotary plate 21, advances toward the peripheral wall of door element 10 when door element 10 is locked and retracts to the reference position inside door element 10 when door element 10 is unlocked; a second advancing and retracting plate 32 which is supported by the front end part of first advancing and retracting plate 26, and projects out from the peripheral wall of door element 10 and fits into an engaging recess 3 of container body 1 when door element 10 is locked and returns from engaging recess 3 of container body 1 toward the door element when door element 10 is unlocked; a guide rib 37 which makes the second advancing and retracting plate 32 incline in the thickness direction of the door element 10 as the plate is being projected.
    • 为了提供一种存储容器,其能够抑制和防止由于前进和后退元件的运动引起的灰尘的产生,其门元件可以形成为具有减小的空间和厚度并且可以防止其中容纳的物品的污染, 包括用于存储精密基板的容器主体1,打开和关闭容器主体1的前部的门元件10和用于锁定和解锁盖体10的门元件10的锁定机构20.锁定机构20由旋转 由门元件10支撑的板21,当门元件10被锁定并且缩回到参考位置时,根据旋转板21的旋转朝向门元件10的周壁前进的第一前进和后退板26 门元件10被解锁时的内门元件10; 第二前进退回板32,其由第一前进退回板26的前端部支撑,并且当门元件10为门元件10时从门元件10的周壁突出并配合到容器主体1的接合凹部3中 当门元件10解锁时,锁定并从容器主体1的接合凹部3返回门元件; 引导肋37,其使得当板被投影时,第二前进和后退板32在门元件10的厚度方向上倾斜。
    • 4. 发明授权
    • Pin photodiode with improved blue light sensitivity
    • 引脚光电二极管,具有改善的蓝光灵敏度
    • US07619293B2
    • 2009-11-17
    • US11443005
    • 2006-05-31
    • Akihiro Hasegawa
    • Akihiro Hasegawa
    • H01L31/105
    • H01L31/02024H01L31/03529H01L31/105Y02E10/50
    • In a laser pickup photodetector of an optical disk playback device, the sensitivity to blue light is improved. On a main surface of a semiconductor substrate, a high resistivity epitaxial layer that becomes an i layer of a PIN photodiode (PIN-PD) is formed. On a surface of the epitaxial layer, two trenches are formed, on a surface of one trench an N+ region that becomes a cathode region of the PIN-PD is formed, and on a surface of the other trench a P+ region that becomes an anode region is formed. When the cathode region and the anode region are set in a reverse bias state, a light receiving semiconductor region that is an i layer between the cathode region and anode region is depleted. The depleted layer expands to a surface of the semiconductor substrate. Accordingly, for blue light having a short wavelength, signal charges can be generated on a surface of the semiconductor substrate and the cathode region can collect the signal charges and extract the charges as a light receiving signal.
    • 在光盘回放装置的激光拾取光电检测器中,对蓝光的灵敏度提高。 在半导体衬底的主表面上形成成为PIN光电二极管(PIN-PD)的i层的高电阻率外延层。 在外延层的表面上,在一个沟槽的表面上形成两个沟槽,形成成为PIN-PD的阴极区域的N +区,在另一个沟槽的表面上形成成为阳极的P +区域 形成区域。 当阴极区域和阳极区域被设置为反向偏置状态时,作为阴极区域和阳极区域之间的i层的光接收半导体区域被耗尽。 耗尽层膨胀到半导体衬底的表面。 因此,对于具有短波长的蓝色光,可以在半导体衬底的表面上产生信号电荷,并且阴极区域可以收集信号电荷并提取电荷作为光接收信号。
    • 5. 发明申请
    • Light receiving element
    • 光接收元件
    • US20080315337A1
    • 2008-12-25
    • US12076509
    • 2008-03-19
    • Akihiro Hasegawa
    • Akihiro Hasegawa
    • H01L31/00
    • H01L27/14678H01L31/105
    • There is provided a structure for a light receiving element having a plurality of light receiving regions, whereby noise charges from a light receiving region can be prevented from becoming superimposed on the signal charges of another light receiving region so that the light receiving regions can generate accurate electric current signals. The structure includes a first light receiving region and a second light receiving region formed on a semiconductor substrate, and a selection circuit connected to the first and second light receiving regions. Each light receiving region has at least one light receiving unit that is divided into a plurality of segments and that outputs current signals in response to incident light. The selection circuit selectively outputs the current signals from either the first light receiving region or the second light receiving region, and which connects the other to a predetermined potential.
    • 提供了一种用于具有多个光接收区域的光接收元件的结构,由此可以防止来自光接收区域的噪声电荷叠加在另一光接收区域的信号电荷上,使得光接收区域能够准确地产生 电流信号。 该结构包括形成在半导体衬底上的第一光接收区和第二光接收区,以及连接到第一和第二光接收区的选择电路。 每个光接收区域具有被分成多个段的至少一个光接收单元,并且响应于入射光而输出电流信号。 选择电路选择性地输出来自第一光接收区域或第二光接收区域的电流信号,并且将另一个连接到预定电位。
    • 6. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20070120131A1
    • 2007-05-31
    • US11600771
    • 2006-11-17
    • Akihiro HasegawaYoji Nomura
    • Akihiro HasegawaYoji Nomura
    • H01L33/00H01L31/12H01L27/15H01L29/26
    • H01L27/14632H01L2924/0002H01L2924/00
    • In a photodetector where a circuit section, in which an interconnection is formed, is formed adjacent to a light receiving section, photo sensitivity within a light receiving surface is prevented from being nonuniform due to an interlayer insulating film at a periphery of the light receiving section being increased in thickness. In a circuit region 74, a buffer region (region 140, 138) is disposed adjacent to a light receiving section 72. In the buffer region, in order to reduce irregularity of an interlayer insulating film 136, a density of planarizing pads 134 disposed between the interconnections 132 is gradually reduced from a standard value in a region 142 as it approaches the light receiving section 72. Since a height of a surface of the interlayer insulating film 136 is lowered by reducing the density of the planarizing pads, a step between the light receiving section 72 and the region 138 adjacent thereto is decreased. As a result, the thickness of the interlayer insulating film accumulating in a peripheral region 144 of the light receiving section 72 is reduced while a width of the region 144 is also reduced, and thus uniformity of the interlayer insulating film 136 on the light receiving section 72 is improved, resulting in improved uniformity of photo sensitivity.
    • 在与光接收部相邻地形成有形成有配线的电路部的光电检测器中,由于光接收部的周围的层间绝缘膜,防止光接收表面内的光敏性不均匀 厚度增加。 在电路区域74中,缓冲区域(区域140,138)被布置成与光接收部分72相邻。在缓冲区域中,为了减少层间绝缘膜136的不规则性,设置在层间绝缘膜136之间的平坦化焊盘134的密度 当区域142接近光接收部分72时,互连132从区域142中的标准值逐渐减小。由于通过降低平坦化焊盘的密度来降低层间绝缘膜136的表面的高度, 光接收部分72和与其相邻的区域138减小。 结果,在光接收部分72的周边区域144中累积的层间绝缘膜的厚度减小,同时区域144的宽度也减小,因此光接收部分上的层间绝缘膜136的均匀性 72得到改善,从而改善了光敏度的均匀性。
    • 7. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060273358A1
    • 2006-12-07
    • US11443005
    • 2006-05-31
    • Akihiro Hasegawa
    • Akihiro Hasegawa
    • H01L31/113
    • H01L31/02024H01L31/03529H01L31/105Y02E10/50
    • In a laser pickup photodetector of an optical disk playback device, the sensitivity to blue light is improved. On a main surface of a semiconductor substrate, a high resistivity epitaxial layer that becomes an i layer of a PIN photodiode (PIN-PD) is formed. On a surface of the epitaxial layer, two trenches are formed, on a surface of one trench an N+ region that becomes a cathode region of the PIN-PD is formed, and on a surface of the other trench a P+ region that becomes an anode region is formed. When the cathode region and the anode region are set in a reverse bias state, a light receiving semiconductor region that is an i layer between the cathode region and anode region is depleted. The depleted layer expands to a surface of the semiconductor substrate. Accordingly, for blue light having a short wavelength, signal charges can be generated on a surface of the semiconductor substrate and the cathode region can collect the signal charges and extract the charges as a light receiving signal.
    • 在光盘回放装置的激光拾取光电检测器中,对蓝光的灵敏度提高。 在半导体衬底的主表面上形成成为PIN光电二极管(PIN-PD)的i层的高电阻率外延层。 在外延层的表面上形成两个沟槽,在一个沟槽的表面上形成成为PIN-PD的阴极区域的N + +区域,并且在另一个沟槽的表面上 形成成为阳极区域的沟槽p + SUP区域。 当阴极区域和阳极区域被设置为反向偏置状态时,作为阴极区域和阳极区域之间的i层的光接收半导体区域被耗尽。 耗尽层膨胀到半导体衬底的表面。 因此,对于具有短波长的蓝色光,可以在半导体衬底的表面上产生信号电荷,并且阴极区域可以收集信号电荷并提取电荷作为光接收信号。