专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明授权

US08546069B2 Method for enhancing lithographic imaging of isolated and semi-isolated features 失效
标题翻译：用于增强隔离和半隔离特征的光刻成像的方法
公开(公告)号：US08546069B2
公开(公告)日：2013-10-01
申请号：US12354247
申请日：2009-01-15
申请人： Wu-Song Huang , Gregory R. McIntyre
发明人： Wu-Song Huang , Gregory R. McIntyre
IPC分类号： G03F7/40
CPC分类号： G03F7/2022 , G03F7/095 , G03F7/26
摘要： The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：本发明涉及用于增强孤立和半隔离特征的光刻成像的光刻方法。在衬底上形成第一光致抗蚀剂的第一层。在第一层上形成第二光致抗蚀剂层。第二光致抗蚀剂包括含有吸收部分的聚合物。第二层通过第一图案化掩模曝光并显影以形成第一浮雕图像。第一浮雕图像和第一层通过第二图案掩模曝光。第一和第二图案化掩模中的一个包括密集图案，而另一个包括隔离或半隔离图案。去除第一层的第一浮雕图像和底部可溶区域以形成具有隔离或半隔离图案的第二浮雕图像。第二层也可以在本发明中曝光和烘烤时可漂白。

102. 发明申请

US20120070782A1 SELF-FORMING TOP ANTI-REFLECTIVE COATING COMPOSITIONS AND, PHOTORESIST MIXTURES AND METHOD OF IMAGING USING SAME 有权
标题翻译：自形成顶部防反射涂料组合物和光刻胶混合物及其成像方法
公开(公告)号：US20120070782A1
公开(公告)日：2012-03-22
申请号：US13301841
申请日：2011-11-22
申请人： Wu-Song Huang , Irene Popova , Pushkara Rao Varanasi , Libor Vyklicky
发明人： Wu-Song Huang , Irene Popova , Pushkara Rao Varanasi , Libor Vyklicky
IPC分类号： G03F7/004 , C08L27/12
CPC分类号： C08F212/34 , C08F212/32 , C08F220/22 , C08F220/26 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/091
摘要： A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.
摘要翻译：物质的组成。物质的组成包括具有乙烯主链并包含具有芳族部分的第一单体，具有碱可溶部分的第二单体或酸不稳定保护基可溶部分的第一单体和具有氟代烷基部分的第三单体的聚合物。还包括包含物质组合物的光致抗蚀剂制剂和使用包含物质组成的光致抗蚀剂制剂的成像方法。

103. 发明授权

US08053172B2 Photoresists and methods for optical proximity correction 有权
标题翻译：用于光学邻近校正的光致抗蚀剂和方法
公开(公告)号：US08053172B2
公开(公告)日：2011-11-08
申请号：US12035009
申请日：2008-02-21
申请人： Scott David Halle , Wu-Song Huang , Ranee Wai-Ling Kwong , Pushkara R. Varanasi
发明人： Scott David Halle , Wu-Song Huang , Ranee Wai-Ling Kwong , Pushkara R. Varanasi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/22 , G03F7/30 , G03F7/38
CPC分类号： G03F7/095 , G03F7/039 , G03F7/0397 , G03F7/091 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.
摘要翻译：光刻组合物和方法。在基板上形成第一光致抗蚀剂的第一层。第二层第二光致抗蚀剂直接形成在第一层上。第二光致抗蚀剂的第二聚合物包括吸收部分。第二层是图案成像和显影，导致去除碱溶性区域。仍然存在来自第二层的浮雕图案。浮雕图案和第一层暴露于第二剂量的辐射。浮雕图案中的聚合物吸收第二剂量的一部分。第二剂量的一部分通过浮雕图案的至少一个区域并暴露第一层的至少一个区域。去除第一层的浮雕图案和碱溶性区域。仍然存在第一层的浮雕图案。还包括第二光刻方法和光致抗蚀剂组合物。

104. 发明申请

US20110262862A1 NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM 有权
标题翻译：近红外吸收层形成组合物和多层膜
公开(公告)号：US20110262862A1
公开(公告)日：2011-10-27
申请号：US13091287
申请日：2011-04-21
申请人： Masaki OHASHI , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Masaki OHASHI , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/004 , G02B5/22
CPC分类号： G03F7/0045 , G02B5/208 , G02B5/22 , G03F7/091 , G03F7/11
摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.
摘要翻译：包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。

105. 发明授权

US07709187B2 High resolution imaging process using an in-situ image modifying layer 有权
标题翻译：使用原位图像修改层的高分辨率成像过程
公开(公告)号：US07709187B2
公开(公告)日：2010-05-04
申请号：US11551824
申请日：2006-10-23
申请人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
发明人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
IPC分类号： G03F7/26
CPC分类号： G03F7/095 , G03F1/56 , G03F7/70466
摘要： A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.
摘要翻译：在衬底上形成图案化材料层的方法。在基板上形成光致抗蚀剂层，然后在光致抗蚀剂上形成图像改性材料。图像修改材料被图案化以形成图像修改图案。然后将图像修改图案和下面的光致抗蚀剂暴露于合适的辐射。图像修改图案修改图像修改图案下方的光致抗蚀剂层内的图像强度。然后将所得图案转移到基底中。

106. 发明授权

US07439302B2 Low refractive index polymers as underlayers for silicon-containing photoresists 有权
$Low refractive index polymers as underlayers for silicon-containing photoresists$
标题翻译：低折射率聚合物作为含硅光致抗蚀剂的底层
公开(公告)号：US07439302B2
公开(公告)日：2008-10-21
申请号：US11195566
申请日：2005-08-02
申请人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
发明人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
IPC分类号： G03F7/11 , C08F8/14 , C08F8/32
CPC分类号： G03F7/091 , G03F7/094 , Y10S438/952
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。本发明的聚合物的实例包括：其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机部分; R 2是氢或甲基; X，Y，Z为0〜7的整数，Y + Z为7以下。上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

107. 发明申请

US20080145793A1 High Resolution Imaging Process Using an In-Situ Image Modifying Layer 有权
标题翻译：使用原位图像修改层的高分辨率成像过程
公开(公告)号：US20080145793A1
公开(公告)日：2008-06-19
申请号：US11551824
申请日：2006-10-23
申请人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
发明人： Kaushal Patel , Wu-Song Huang , Margaret C. Lawson , Jaione Tirapu Azpiroz
IPC分类号： G03C5/00
CPC分类号： G03F7/095 , G03F1/56 , G03F7/70466
摘要： A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.
摘要翻译：在衬底上形成图案化材料层的方法。在基板上形成光致抗蚀剂层，然后在光致抗蚀剂上形成图像改性材料。图像修改材料被图案化以形成图像修改图案。然后将图像修改图案和下面的光致抗蚀剂暴露于合适的辐射。图像修改图案修改图像修改图案下方的光致抗蚀剂层内的图像强度。然后将所得图案转移到基底中。

108. 发明授权

US07326523B2 Low refractive index polymers as underlayers for silicon-containing photoresists 有权
$Low refractive index polymers as underlayers for silicon-containing photoresists$
标题翻译：低折射率聚合物作为含硅光致抗蚀剂的底层
公开(公告)号：US07326523B2
公开(公告)日：2008-02-05
申请号：US11013971
申请日：2004-12-16
申请人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
发明人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
IPC分类号： G03F7/20 , G03F7/30 , G03F7/36 , G03C1/835 , G03C1/825
CPC分类号： G03F7/091 , G03F7/094 , Y10S438/952
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

109. 发明申请

US20070248908A1 ADVANCED CHEMICALLY AMPLIFIED RESIST FOR SUB 30NM DENSE FEATURE RESOLUTION 有权
标题翻译：先进的化学放大电阻，用于30NM密度特征分辨率
公开(公告)号：US20070248908A1
公开(公告)日：2007-10-25
申请号：US11380098
申请日：2006-04-25
申请人： Wu-Song Huang , David Medeiros , Gregory Wallraff
发明人： Wu-Song Huang , David Medeiros , Gregory Wallraff
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/38
摘要： The present invention discloses a chemically amplified (CA) resist composition for printing features having a dimension of about 30 nm or less and a method of forming a material structure having a pattern containing features having a dimension of about 30 nm or less by using the inventive CA resist. The CA resist composition comprises (a) about 1 to about 50 weight % of a copolymer, (b) about 0.02 to about 25 weight % of a photoacid generator, (c) about 47 to about 99 weight % of a solvent, and (d) about 0.004 to about 25 weight % of a base additive. The copolymer comprises at least one hydrophilic monomer unit containing one or more polar functional groups and at least one hydrophobic monomer unit containing one or more aromatic groups. Some, but not all, of the one or more polar functional groups in the copolymer are protected with acid labile moieties having a low activation energy.
摘要翻译：本发明公开了一种用于印刷尺寸为约30nm或更小的特征的化学放大（CA）抗蚀剂组合物，以及通过使用本发明形成具有尺寸为约30nm或更小的特征的图案的材料结构的方法 CA抗拒。 CA抗蚀剂组合物包含（a）约1至约50重量％的共聚物，（b）约0.02至约25重量％的光酸产生剂，（c）约47至约99重量％的溶剂和（ d）约0.004至约25重量％的基础添加剂。共聚物包含至少一个含有一个或多个极性官能团的亲水性单体单元和至少一个含有一个或多个芳族基团的疏水性单体单元。共聚物中一个或多个极性官能团的一些但不是全部由具有低活化能的酸不稳定部分保护。

110. 发明授权

US07168224B2 Method of making a packaged radiation sensitive resist film-coated workpiece 有权
标题翻译：制造辐射敏感抗蚀剂膜涂层工件的方法
公开(公告)号：US07168224B2
公开(公告)日：2007-01-30
申请号：US10295595
申请日：2002-11-15
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65B29/00
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitivity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译：本发明包括一个包装的涂层工件。包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件周没有明显的灵敏度，分辨率或性能的损失。本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式