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101. 发明授权

US06535069B2 High-frequency power amplifier module 失效
标题翻译：高频功率放大器模块
公开(公告)号：US06535069B2
公开(公告)日：2003-03-18
申请号：US10084364
申请日：2002-02-28
申请人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
发明人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
IPC分类号： H03F304
CPC分类号： H03F3/72 , H03F3/193 , H03F3/211 , H03F2200/306 , H03F2200/309 , H03F2200/39 , H03F2200/429 , H04B1/0053 , H04B1/0458
摘要： A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive a first frequency f1 and second frequency f2 (f2=2×f1). It includes a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit has a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at harmonics of a frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at harmonics of a frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for matching with f1 and f2.
摘要翻译：一种能够发送和接收第一频率f1和第二频率f2（f2 = 2xf1）的双频带型移动通信装置的射频功率放大器模块。它包括具有匹配电路的f1和f2处的增益峰值的驱动级放大器和包括射频功率输出晶体管的射频功率输出电路。输出电路具有连接到输出晶体管的漏极端的传输线，串联连接到传输线的并联谐振电路，以使谐振频率为频率f2的两倍的频率，串联谐振电路设置在谐振电路和接地谐振频率为频率f2的频率的谐波，以及与并联谐振电路的另一端串联设置的与f1和f2匹配的输出匹配电路。

102. 发明授权

US06528848B1 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：US06528848B1
公开(公告)日：2003-03-04
申请号：US09666772
申请日：2000-09-20
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L2972
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

103. 发明授权

US06499236B2 Snow removing machine 有权
标题翻译：除雪机
公开(公告)号：US06499236B2
公开(公告)日：2002-12-31
申请号：US09893719
申请日：2001-06-28
申请人： Isao Yoshida , Yasunori Yamamoto , Norikazu Shimizu , Seishu Sakai , Masakatsu Kono
发明人： Isao Yoshida , Yasunori Yamamoto , Norikazu Shimizu , Seishu Sakai , Masakatsu Kono
IPC分类号： A63C1910
CPC分类号： E01H5/04 , B62D55/0882 , Y10T74/20624
摘要： A snow removing machine has a vehicle body having a body frame, a snow removing section mounted on a front portion of the body frame for removing snow, an operating handle mounted to a rear portion of the body frame and having a first handle portion and a second handle portion, and a pair of grip portions each mounted on a respective one of the first and second handle portions of the operating handle. A forward and aft drive changeover switch is directly mounted on the first handle portion of the operating handle for changing over a traveling direction of the vehicle body. A height control operation lever is directly mounted on the first handle portion of the operating handle for adjusting a height of the snow removing section. A speed control operation lever is directly mounted on the second handle portion of the operating handle for adjusting a traveling speed of the vehicle body.
摘要翻译：除雪机具有车身，车体具有主体框架，除雪部分安装在车身框架的前部以除雪;操作手柄，其安装在主体框架的后部，并具有第一把手部分和第二把手部分和一对把手部分，每个把手部分安装在操作手柄的第一和第二把手部分中的相应一个上。前后驱动切换开关直接安装在操作手柄的第一把手部分上，用于切换车体的行进方向。高度控制操作杆直接安装在操作手柄的第一把手部分上，用于调节除雪部分的高度。速度控制操作杆直接安装在操作手柄的第二把手部分上，用于调节车身行驶速度。

104. 发明授权

US06496630B2 Fingerprint recognition device and fingerprint reading window construction 失效
标题翻译：指纹识别装置和指纹阅读窗口构建
公开(公告)号：US06496630B2
公开(公告)日：2002-12-17
申请号：US09799575
申请日：2001-03-07
申请人： Hajimu Iwai , Isao Yoshida
发明人： Hajimu Iwai , Isao Yoshida
IPC分类号： G02B604
CPC分类号： G06K9/00046
摘要： To enable easy replacement of a soiled fingerprint reading window. To reduce the number of light sources and achieve miniaturization. An aperture 5 is formed in part of a case K constituting the outer shell of a fingerprint recognition device, aperture 5 being covered by a cover member 4. Cover member 4 that covers aperture 5 constitutes part of case K. An aperture 6 formed in cover member 4 is covered by a window member 7 for fingerprint reading consisting of an optically transparent member. Window member 7 is arranged on the under-surface of cover member 4 and is resiliently held by the holding feet 11 formed on cover member 4. Light source 42, light-guide plate 43, reflection mirrors 33 and 34, image pick-up lens 35 and image pick-up element 36 are held by holding body H which is fixedly arranged in case K. Window member 7 is clamped between supporting faces 38 of holding body H and cover member 4 so as to be immovable. Light-guide plate 43 is arranged adjacent and inclined with respect to window member 7. Detection light rays from light-emitting elements 42 are sufficiently diffused while passing through light-guide plate 43 and are emitted in planar fashion from light-guide plate 43 towards window member 7.
摘要翻译：以便轻松更换脏污的指纹阅读窗。为了减少光源的数量并实现小型化。在构成指纹识别装置的外壳的壳体K的一部分上形成有孔5，孔5被盖构件4覆盖。覆盖孔5的盖构件4构成形成在盖构件4中的孔6由用于由光学透明构件组成的指纹读取用窗构件7覆盖。窗构件7布置在盖构件4的下表面上，并由形成在盖构件4上的保持脚11弹性地保持。光源42，导光板43，反射镜33和34，摄像透镜 35和摄像元件36由固定地布置在壳体K中的保持体H保持。窗构件7被夹持在保持体H的支撑面38和盖构件4之间以便不可移动。导光板43 被布置成相对于窗构件7相邻并倾斜。来自发光元件42的检测光线在穿过导光板43时被充分地扩散，并且以平面方式从导光板43朝向窗构件7发射。

105. 发明授权

US06366788B1 Mobile telephone system 失效
标题翻译：移动电话系统
公开(公告)号：US06366788B1
公开(公告)日：2002-04-02
申请号：US09674072
申请日：2000-10-26
申请人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
发明人： Toru Fujioka , Isao Yoshida , Mineo Katsueda , Masatoshi Morikawa , Yoshikuni Matsunaga , Kenji Sekine , Osamu Kagaya
IPC分类号： H04B138
CPC分类号： H04B1/006 , H03F3/193 , H03F3/604 , H03F3/72 , H03F2200/306 , H03F2200/309 , H03F2200/39 , H03F2200/429 , H04B1/005 , H04B1/406
摘要： In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.
摘要翻译：在对应于具有以两种不同频率工作的RF功率模块的双频带的移动电话装置中，向这种RF功率模块的输出电路提供公共谐波控制电路，以实现更高的效率两个频段的谐波功率。此外，还提供了用于选择性地设置偏置的装置，使得可以根据各个通信系统所需的输出功率来获得最大效率，其中从控制单元的CPU输出的偏置控制信号与选择频率的移动电话机身。

106. 发明授权

US6057998A Insulated gate type semiconductor apparatus with a control circuit 失效
标题翻译：具有控制电路的绝缘栅型半导体装置
公开(公告)号：US6057998A
公开(公告)日：2000-05-02
申请号：US998644
申请日：1997-12-29
申请人： Kozo Sakamoto , Isao Yoshida
发明人： Kozo Sakamoto , Isao Yoshida
IPC分类号： H03K17/08 , H03K17/082 , H02H3/00
CPC分类号： H03K17/0828 , H03K17/0822 , H03K2017/0806
摘要： There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device.In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on.By adding such a control circuit, an insulated gate semiconductor apparatus having therein the protection circuit according to the invention can reduce a leakage current flowing from the drain terminal to the gate terminal when a negative voltage is applied to the gate and can operate at high speed without causing drop of a drain breakdown voltage.
摘要翻译：公开了具有诸如过热保护电路和过电流保护电路等控制电路的功率MOSFET，IGBT等半导体装置，实现了高速运行和防止由寄生器件引起的错误操作。为了防止由MOSFET32的寄生npn晶体管29引起的功率MOSFET 30和保护电路21的错误操作，控制电路20控制，使得当栅极端子2的电压相对于源极端子3，开关电路SW3导通，当栅极端子2的电压相对于源极端子3的电压为负时，开关电路SW2导通，并且当栅极端子2和源极端子3 具有几乎相同的电位，并且漏极端子1具有高电位，开关电路SW2导通。通过添加这样的控制电路，其中具有根据本发明的保护电路的绝缘栅半导体装置可以减小当向栅极施加负电压并且可以高速运行时从漏极端子流到栅极端子的漏电流而不会引起漏极击穿电压的下降。

107. 发明授权

US5903034A Semiconductor circuit device having an insulated gate type transistor 失效
标题翻译：具有绝缘栅型晶体管的半导体电路器件
公开(公告)号：US5903034A
公开(公告)日：1999-05-11
申请号：US710009
申请日：1996-09-11
申请人： Kozo Sakamoto , Isao Yoshida
发明人： Kozo Sakamoto , Isao Yoshida
IPC分类号： H01L27/02 , H01L27/06 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/0251 , H01L27/0629
摘要： In a semiconductor circuit device having a substrate, a first region of a first conductivity type formed in the substrate, a second region of a second conductivity type contacted to the first region and a MISFET formed in the second region, there is a problem of that a parasitic npn bipolar transistor constituted by the first region, the second region and a source or drain of the MISFET activates. In this invention, switching circuitry is provided to make the second region floating or to connect the second region with the source or drain of the MISFET when a negative first input voltage is input to a source or a drain of the first MISFET. By virtue of the switching circuitry, no base current of the parasitic bipolar transistor occurs, thereby preventing operation of the parasitic transistor. In particular, when the switching circuitry operates to cause the second region to float, the base of the parasitic bipolar transistor will float, and the bipolar transistor cannot operate. Alternatively, when the switching circuitry connects the second region with the source or drain, the base-emitter junction of the parasitic bipolar transistor will be shorted, which also prevents its operation.
摘要翻译：在具有衬底的半导体电路器件中，形成在衬底中的第一导电类型的第一区域，与第一区域接触的第二导电类型的第二区域和形成在第二区域中的MISFET，存在这样的问题：由MISFET的第一区域，第二区域和源极或漏极构成的寄生npn双极晶体管激活。在本发明中，当负的第一输入电压输入到第一MISFET的源极或漏极时，提供开关电路以使第二区域浮置或者将第二区域与MISFET的源极或漏极连接。由于开关电路，不会发生寄生双极晶体管的基极电流，从而防止寄生晶体管的工作。特别地，当开关电路操作以使第二区域浮动时，寄生双极晶体管的基极将浮置，并且双极晶体管不能工作。或者，当开关电路将第二区域与源极或漏极连接时，寄生双极晶体管的基极 - 发射极结将被短路，这也阻止其工作。

108. 发明授权

US5642252A Insulated gate semiconductor device and driving circuit device and electronic system both using the same 失效
标题翻译：绝缘栅半导体器件和驱动电路器件和电子系统均采用相同的方式
公开(公告)号：US5642252A
公开(公告)日：1997-06-24
申请号：US288729
申请日：1994-08-15
申请人： Kozo Sakamoto , Isao Yoshida , Shigeo Otaka , Tetsuo Iijima , Harutora Shono , Ken Uchid , Masayoshi Kobayashi , Hideki Tsunoda
发明人： Kozo Sakamoto , Isao Yoshida , Shigeo Otaka , Tetsuo Iijima , Harutora Shono , Ken Uchid , Masayoshi Kobayashi , Hideki Tsunoda
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L29/78 , H02H5/04 , H03K17/08 , H03K17/082 , H02H3/00
CPC分类号： H03K17/0822 , H01L27/0248 , H01L27/0251 , H01L27/0255 , H01L29/7803 , H01L29/7804 , H02H5/044 , H01L29/0696 , H03K2017/0806
摘要： An improvement in conditions that protective functions of an insulated gate semiconductor device with a protection circuit incorporated therein are performed, an improvement in the cutoff of heating, the prevention of malfunctions and an improvement in ease of usage can be achieved.The insulated gate semiconductor device of the present invention comprises a power insulated gate semiconductor element (M9), at least one MOSFET (M1 through M7) for a protection circuit, for controlling the power insulated gate semiconductor element, a constant-voltage circuit using forward voltages developed across diodes (D2a through D2f) for the constant-voltage circuit, and voltage restricting diodes (D1 and D0a through D0d) for controlling the upper limit of a power supply voltage of the constant-voltage circuit. Power to be supplied to the voltage restricting diodes is supplied from an external gate terminal of the power insulated gate semiconductor element.The present invention can bring about an advantageous effect that an improvement in reliability of the insulated gate semiconductor device and an improvement in the ease of use can be achieved.
摘要翻译：可以实现具有并入其中的保护电路的绝缘栅半导体器件的保护功能的条件的改善，可以提高加热截止，防止故障和提高易用性。本发明的绝缘栅半导体器件包括功率绝缘栅极半导体元件（M9），用于保护电路的至少一个MOSFET（M1至M7），用于控制功率绝缘栅极半导体元件，使用正向的恒压电路用于恒压电路的二极管（D2a至D2f）上产生的电压以及用于控制恒压电路的电源电压的上限的电压限制二极管（D1和D0a至D0d）。供电到限压二极管的功率从功率绝缘栅极半导体元件的外部栅极端子提供。本发明可以实现提高绝缘栅极半导体器件的可靠性和提高易用性的有利效果。

109. 外观设计

USD307912S Snowblower 失效
公开(公告)号：USD307912S
公开(公告)日：1990-05-15
申请号：US288752
申请日：1988-12-27
申请人： Isao Yoshida , Joji Maeda
设计人： Isao Yoshida , Joji Maeda

110. 发明授权

US4814288A Method of fabricating semiconductor devices which include vertical elements and control elements 失效
标题翻译：制造包括垂直元件和控制元件的半导体器件的方法
公开(公告)号：US4814288A
公开(公告)日：1989-03-21
申请号：US72164
申请日：1987-07-10
申请人： Masatoshi Kimura , Takeaki Okabe , Isao Yoshida , Kouzou Sakamoto , Kazuo Hoya , Kouichiro Satonaka , Toyomasa Koda , Shigeo Ohtaka
发明人： Masatoshi Kimura , Takeaki Okabe , Isao Yoshida , Kouzou Sakamoto , Kazuo Hoya , Kouichiro Satonaka , Toyomasa Koda , Shigeo Ohtaka
IPC分类号： H01L27/08 , H01L21/331 , H01L21/76 , H01L21/8222 , H01L21/8234 , H01L21/8248 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/73 , H01L29/732 , H01L29/78 , H01L21/20 , H01L21/302
CPC分类号： H01L21/8249 , H01L27/0623
摘要： A method of fabricating semiconductor devices which include vertical elements and control elements. A well is formed by etching in a semiconductor substrate of a first conductivity type, and a first epitaxial layer having a second conductivity type opposite to the first conductivity type is epitaxially grown, followed by etching and/or grinding and/or polishing to fill said well. Further, a second epitaxial layer of the first conductivity type is epitaxially grown on the substrate and on the first epitaxial layer, and an impurity-doped layer of the second conductivity type for isolation is formed in the second epitaxial layer to penetrate therethrough. A first element is formed in the second epitaxial layer in a portion that corresponds to the well, and a second element having a vertical structure and having a current capability higher than that of the first element is formed except a portion of the second epitaxial layer that corresponds to the well.
摘要翻译：一种制造包括垂直元件和控制元件的半导体器件的方法。通过在第一导电类型的半导体衬底中蚀刻形成阱，并且外延生长具有与第一导电类型相反的第二导电类型的第一外延层，随后进行蚀刻和/或研磨和/或抛光以填充所述好。此外，第一导电类型的第二外延层在衬底和第一外延层上外延生长，并且在第二外延层中形成用于隔离的第二导电类型的杂质掺杂层以穿透其中。在对应于阱的部分中的第二外延层中形成第一元件，并且除了第二外延层的一部分之外，形成具有比第一元件的电流能力高的垂直结构并具有电流能力的第二元件，对应于井。

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