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101. 发明授权

US4346457A Dovetail propagation structure for contiguous disk bubble devices 失效
标题翻译：连续圆盘气泡装置的燕尾传播结构
公开(公告)号：US4346457A
公开(公告)日：1982-08-24
申请号：US203185
申请日：1980-11-03
申请人： Hung L. Hu , Kochan Ju
发明人： Hung L. Hu , Kochan Ju
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0816
摘要： A propagation track for use in contiguous disk bubble devices consists of a plurality of spaced dovetail shaped elements which are connected at one end thereof by a track portion which faces in the direction of and is substantially perpendicular to the (1,1,2) axis. The first, third and fifth sides of the dovetail structure are elongated and also face in the direction of and are substantially perpendicular to the (1,1,2) axis. The remaining sides of the dovetail structure have different orientations, the second side facing in the direction of and being substantially perpendicular to the (2,1,1) axis, and the fourth side facing in the direction of and being substantially perpendicular to the (1,2,1) axis. The orientation of the two cusps formed by the first and second sides and the fourth and fifth sides is such that the lines bisecting and pointing toward the cusps are substantially parallel to the (1,2,1) and (2,1,1) axes, respectively.
摘要翻译：用于连续圆盘气泡装置的传播轨迹由多个间隔开的燕尾形元件组成，它们的一端连接有一个轨道部分，该轨道部分面向（1,1,2）轴线方向并基本上垂直于。燕尾结构的第一，第三和第五面是细长的并且也面向（1,1,2）轴的方向并基本上垂直于（1,1,2）轴。燕尾结构的剩余侧面具有不同的取向，第二面朝向（2,1,1）轴线的方向并且基本上垂直于（2,1,1）轴线，并且第四侧面朝向（...） 1,2,1）轴。由第一和第二面以及第四和第五面形成的两个尖端的取向使得平分和指向尖端的线基本上平行于（1,2,1）和（2,1,1）轴。

102. 发明申请

US20100142099A1 LOW RESISTANCE TUNNEL MAGNETORESISTANCE (TMR) STRUCTURE 有权
标题翻译：低电阻隧道磁阻（TMR）结构
公开(公告)号：US20100142099A1
公开(公告)日：2010-06-10
申请号：US12332010
申请日：2008-12-10
申请人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
发明人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
IPC分类号： G11B5/33 , G11B5/39 , B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , Y10T428/1114
摘要： A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.
摘要翻译：一个实施例中的磁性结构包括隧道势垒层; 自由层以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。还介绍了其他系统和方法。

103. 发明授权

US07506430B2 Process to manufacture narrow track CPP head with bias cancellation 有权
标题翻译：制造具有偏压消除的窄轨CPP头的工艺
公开(公告)号：US07506430B2
公开(公告)日：2009-03-24
申请号：US11588563
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

104. 发明授权

US07134184B2 Process of manufacturing a narrow track CCP head with bias cancellation 失效
标题翻译：制造具有偏置消除的窄轨CCP头的过程
公开(公告)号：US07134184B2
公开(公告)日：2006-11-14
申请号：US10706838
申请日：2003-11-12
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/23 , G11B5/187
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

105. 发明申请

US20060202244A1 Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing 有权
标题翻译：具有堆叠存储单元的磁性随机存取存储器具有相反方向的硬轴偏置
公开(公告)号：US20060202244A1
公开(公告)日：2006-09-14
申请号：US11075900
申请日：2005-03-09
申请人： Kochan Ju , Jei-Wei Chang
发明人： Kochan Ju , Jei-Wei Chang
IPC分类号： H01L29/94
CPC分类号： H01L27/226 , G11C11/16
摘要： A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the switching field of its associated cell by applying a biasing field along the hard-axis of magnetization of the free layer of its associated cell. The free layers in the two cells in each stack have their in-plane easy axes of magnetization aligned parallel to one another. Each biasing layer has its in-plane magnetization direction oriented perpendicular to the easy axis of magnetization (and thus parallel to the hard axis) of the free layer in its associated cell. The hard-axis biasing fields generated by the two biasing layers are in opposite directions.
摘要翻译：磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储器堆栈具有沿Z轴堆叠的两个存储器单元，并且每个存储器单元具有相关联的偏置层。每个偏置层通过沿其相关联的单元的自由层的硬磁化轴施加偏置场来减小其相关单元的切换场。每个堆叠中的两个电池中的自由层具有平行彼此平行的平面内容易的磁化轴。每个偏置层的面内磁化方向垂直于其相关电池中的自由层的易磁化轴（并且因此平行于硬轴）定向。由两个偏压层产生的硬轴偏置磁场处于相反的方向。

106. 发明授权

US07106558B2 Biased spin valve head with canted adjacent layer and current channeling layer 失效
公开(公告)号：US07106558B2
公开(公告)日：2006-09-12
申请号：US10868713
申请日：2004-06-15
申请人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
发明人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

107. 发明授权

US07106554B2 Perpendicular magnetic writer with magnetic potential control shield 失效
标题翻译：具有磁势控制屏蔽的垂直磁性写入器
公开(公告)号：US07106554B2
公开(公告)日：2006-09-12
申请号：US10411345
申请日：2003-04-10
申请人： Lijie Guan , Hung Liang Hu , Yaw Shing Tang , Kochan Ju
发明人： Lijie Guan , Hung Liang Hu , Yaw Shing Tang , Kochan Ju
IPC分类号： G11B5/11 , G11B5/187
CPC分类号： G11B5/3146 , G11B5/1272 , G11B5/1278 , G11B5/187 , G11B5/3116 , G11B2005/0013 , G11B2005/0029
摘要： Conventional perpendicular writers that utilize an extended return pole are subject to large undershoot fields. This problem has been reduced by replacing the prior art extended return pole by one whose magnetic potential has been increased relative to both the main and return poles. In a first embodiment, a second non-magnetic gap is inserted between the extended return pole and the return pole. In a second embodiment, the extended return pole is made very thin, thereby increasing its reluctance, while a third embodiment combines both reluctance-increasing features in a single design.
摘要翻译：使用延伸返回极的常规垂直写入器受到大的下冲场。通过将现有技术的延伸返回极替换为相对于主极和返回极两者的磁势已经增加的极点，已经减少了这个问题。在第一实施例中，第二非磁隙插入延伸的返回极和返回极之间。在第二实施例中，扩展的返回极被制成非常薄，从而增加其磁阻，而第三实施例在单一设计中组合磁阻增加特征。

108. 发明授权

US06992910B1 Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell 有权
标题翻译：具有三个或更多个堆叠式触发存储器单元的磁性随机存取存储器以及用于写入所选单元的方法
公开(公告)号：US06992910B1
公开(公告)日：2006-01-31
申请号：US11185331
申请日：2005-07-20
申请人： Kochan Ju , Oletta Allegranza
发明人： Kochan Ju , Oletta Allegranza
IPC分类号： G11C7/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/226
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个存储器堆栈位于两个正交写入线之间的交叉区域。堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开堆栈中的SAF自由层。堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

109. 发明授权

US06973712B2 Lead plating method for GMR head manufacture 失效
标题翻译： GMR头制造的铅电镀方法
公开(公告)号：US06973712B2
公开(公告)日：2005-12-13
申请号：US10093106
申请日：2002-03-07
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.
摘要翻译： GMR结构的Lead Overlay设计中的一个主要问题是磁性读取磁道宽度比物理读取磁道宽度宽。这是由于引线和GMR层之间的高界面电阻，这是现有技术方法的不可避免的副作用。本发明使用在湿蚀刻之前的电镀来制造引线。该方法仅需要在GMR层上的薄保护层，以确保接口电阻最小。使用湿表面清洁可以避免溅射缺陷，电镀与此相容，因此清洁表面被保留只需要一个光刻步骤来定义轨道，因为没有重新沉积。

110. 发明授权

US06937497B1 Magnetic random access memory with stacked toggle memory cells 有权
标题翻译：带随机存取存储单元的磁性随机存取存储器
公开(公告)号：US06937497B1
公开(公告)日：2005-08-30
申请号：US10991993
申请日：2004-11-18
申请人： Kochan Ju , Oletta Allegranza
发明人： Kochan Ju , Oletta Allegranza
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个存储器堆栈位于两个正交写入线之间的交叉区域。堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开堆栈中的SAF自由层。堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

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