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91. 发明授权

US06143633A In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon 失效
标题翻译：晶体生长期间掺杂杂质的原位扩散
公开(公告)号：US06143633A
公开(公告)日：2000-11-07
申请号：US725454
申请日：1996-10-04
申请人： Balakrishnan R Bathey
发明人： Balakrishnan R Bathey
IPC分类号： C30B15/04 , C30B15/34 , C30B29/64 , H01L31/18 , C30D15/04
CPC分类号： C30B15/04 , C30B15/34 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A dendritic web formation process and apparatus for diffusing dopant impurities into a growing dendritic crystal web to produce photovoltaic cells. A solid dopant diffusion source is arranged in a holder mounted in a vertical thermal element either within the melt furnace or outside the furnace adjacent the furnace exit port. The solid diffusion source is heated by thermal conduction from the vertical thermal element and source holder using the furnace heat as a source. Auxiliary heater coils are optionally provided around the vertical thermal element to control the temperature of the solid diffusion source. The source and holder can also be mounted outside the furnace adjacent the exit port and heated using a secondary rapid temperature external heater. The growing dendritic crystal web is exposed to the dopant impurities as part of the web growing process, eliminating the need for a separate diffusion gaseous station and processing.
摘要翻译：用于将掺杂剂杂质扩散到生长的树枝状晶体网中以产生光伏电池的树枝状网状物形成工艺和装置。固体掺杂剂扩散源被布置在安装在熔融炉内的垂直热元件中或与炉出口相邻的炉外部的保持器中。固体扩散源通过使用炉热作为源的垂直热元件和源保持器的热传导来加热。辅助加热器线圈可选地围绕垂直热元件设置以控制固体扩散源的温度。源和保持器也可以安装在靠近出口的炉外，并使用二次快速温度的外部加热器进行加热。生长的树枝状晶体网作为卷材生长过程的一部分暴露于掺杂杂质，消除了单独的扩散气体站和处理的需要。

92. 发明授权

US06139811A EFG crystal growth apparatus 有权
标题翻译： EFG晶体生长仪
公开(公告)号：US06139811A
公开(公告)日：2000-10-31
申请号：US276453
申请日：1999-03-25
申请人： Jeffrey X. Cao , Robert M. Giancola , Charles G. Caprini , David Garcia
发明人： Jeffrey X. Cao , Robert M. Giancola , Charles G. Caprini , David Garcia
IPC分类号： B01D9/00 , C30B15/00 , C30B15/34 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/34 , C30B29/607 , C30B35/00 , Y10T117/104
摘要： A new EFG (Edge-defined Film-fed Growth) crucible/die configuration is provided which (a) overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during the crystal growth and (b) prevent the crucible/die unit from fracturing its supporting susceptor during cool-down.
摘要翻译：提供了一种新的EFG（边缘限定薄膜进料生长）坩埚/模具结构，其（a）克服了在晶体生长期间在热区中的中心毂区附近的硅进料材料形成固体物质的倾向， b）在冷却期间，防止坩埚/模具单元破裂其支撑基座。

93. 发明授权

US6072118A Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member 失效
标题翻译：通过将板拉动通过生长构件来生长晶体硅板的方法和装置
公开(公告)号：US6072118A
公开(公告)日：2000-06-06
申请号：US897945
申请日：1997-07-24
申请人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
发明人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
IPC分类号： C30B29/06 , C30B15/00 , C30B15/08 , C30B15/24 , H01L31/04 , C30B15/34 , H01L21/268
CPC分类号： C30B29/06 , C30B15/08 , C30B15/24
摘要： A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要翻译：一种用于生长结晶硅板的方法，包括以下步骤：设置平面生长构件和其中放置硅熔体的生长坩埚，并且在其下侧设置有熔体引出开口，同时至少生长部件的前端部位于拉出口下方，通过拉出口从坩埚抽出熔融液，使拉出的熔融物与生长部件的前端部接触，进一步向下拉熔融物通过生长部件的尖端部分。

94. 发明授权

US5885345A Method of fabricating shaped crystals by overhead-pressure liquid injection 失效
标题翻译：通过塔顶压力液体注射制造成形晶体的方法
公开(公告)号：US5885345A
公开(公告)日：1999-03-23
申请号：US817873
申请日：1997-05-21
申请人： Shiro Sakuragi
发明人： Shiro Sakuragi
IPC分类号： C30B11/00 , F25B21/02 , F25D11/00 , H01L35/32 , H01L35/34 , C30B15/34
CPC分类号： C30B29/06 , C30B11/00 , C30B11/007 , C30B29/46 , C30B29/60 , H01L35/32 , H01L35/34 , F25B21/02 , F25D11/00 , H01L2924/0002 , Y10T117/1036
摘要： A shaper (2) is arranged within a shaping vessel (1). A raw material for a crystal is inserted into the shaping vessel (1) and a crystal melt (5) is formed by setting it in a predetermined atmosphere and heating it. A mechanical force F1 is applied to the crystal melt (5), which is present on the upper surface of the shaper (2), by a pressuring member (4) from above. The crystal melt (5) has nowhere to escape but a gap (3) formed by the shaper(2), so it is injected into that gap (3) as shown by the arrow. This method of fabricating a shaped crystal is suitable for fabricating a monocrystal or multicrystal semiconductor from a material such as silicon, germanium, or bismuth telluride.
摘要翻译： PCT No.PCT / FR95 / 01278 Sec。 371日期1997年5月21日 102（e）日期1997年5月21日PCT提交1996年7月30日PCT公布。公开号WO97 / 13010 PCT 日期1997年4月10日成形器（2）布置在成形容器（1）内。将晶体原料插入成形容器（1）中，并通过将其固定在预定的气氛中并加热来形成晶体熔体（5）。机械力F1通过加压构件（4）从上方施加到存在于成形器（2）的上表面上的结晶熔体（5）。晶体熔体（5）无法逃脱，而是由整形器（2）形成的间隙（3），因此如箭头所示注入到该间隙（3）中。这种制造成形晶体的方法适用于从诸如硅，锗或碲化铋的材料制造单晶或多晶半导体。

95. 发明授权

US5266151A Inside edge defined, self-filling (IESF) die for crystal growth 失效
标题翻译：内边缘定义，自填充（IESF）模具用于晶体生长
公开(公告)号：US5266151A
公开(公告)日：1993-11-30
申请号：US846533
申请日：1992-03-04
申请人： David N. Jewett
发明人： David N. Jewett
IPC分类号： C30B15/34 , B01D9/00
CPC分类号： C30B15/34
摘要： A method and system for growing elongated crystalline materials. Crystalline melt rises through a capillary. At the upper end of the capillary is a die having a die tip. A seed crystal engages and draws the melt through the die tip. The die tip is characterized by a top surface and an aperture therein. The top surface is non-wetting with reference to the crystalline melt. The geometry of the aperture or inner edge defines the geometry of the crystalline filament formed.
摘要翻译：用于生长细长结晶材料的方法和系统。结晶熔体通过毛细管上升。在毛细管的上端是具有模尖的模具。晶种通过模头接合并拉出熔体。模头的特征在于其中的顶表面和孔。相对于晶体熔体，顶部表面是非润湿的。孔或内边缘的几何形状限定了形成的结晶丝的几何形状。

96. 发明授权

US5106763A Method of fabricating solar cells 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5106763A
公开(公告)日：1992-04-21
申请号：US271514
申请日：1988-11-15
申请人： Balakrishnan R. Bathey , Mary C. Cretalla , Aaron S. Taylor
发明人： Balakrishnan R. Bathey , Mary C. Cretalla , Aaron S. Taylor
IPC分类号： C30B19/00 , C30B15/00 , C30B15/04 , C30B15/34 , H01L21/208 , H01L31/0224 , H01L31/0288 , H01L31/04 , H01L31/18
CPC分类号： H01L31/182 , C30B15/00 , C30B15/04 , C30B15/34 , C30B29/60 , H01L31/022425 , H01L31/0288 , Y02E10/546 , Y02P70/521 , Y10S148/041 , Y10S148/073 , Y10S438/907
摘要： A method and apparatus for producing crystalline substrates for use in fabricating solid state electronic devices. A hollow crystalline body is grown from a melt containing a dopant and a P-N junction is formed in said crystalline body as it is being grown. Then the hollow body is severed to provide individual solar cell substrates.

97. 发明授权

US5102494A Wet-tip die for EFG cyrstal growth apparatus 失效
标题翻译：用于EFG胰岛生长装置的湿尖模具
公开(公告)号：US5102494A
公开(公告)日：1992-04-07
申请号：US670279
申请日：1991-03-15
申请人： David S. Harvey , Dana L. Winchester , Brian H. Mackintosh , Sankerlingam Rajendran
发明人： David S. Harvey , Dana L. Winchester , Brian H. Mackintosh , Sankerlingam Rajendran
IPC分类号： C30B15/34
CPC分类号： C30B15/34 , Y10T117/104
摘要： A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving the uniformity of thickness of the wall of the crystalline body grown from a film of melt on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die. In the event the growth meniscus breaks, liquid silicon is captured in the moats, thereby preventing or reducing the likelihood of flooding of the die and associated growth apparatus.
摘要翻译：提供了一种新颖的毛细管模头和晶体生长方法，用于通过EFG生长中空晶体。内外环形护城河环绕模头。通道设置用于从坩埚向这些护城河供应熔体，使得在中空结晶体的生长期间，所述护城河中的熔体将湿润并覆盖模头顶部的内外表面。新颖的模具可以构造成具有比迄今为止用于成功生长中空体的EFG模具更低的模头和更短的毛细管。模具设计有利于保持模头尖端的温度在其周边上基本均匀，从而提高从模头上的熔体膜生长的结晶体的壁厚度的均匀性。护城河减少了生长过程被模具淹水中断或不利影响的可能性。在生长半月板破裂的情况下，液态硅被捕获在护城河中，从而防止或降低了模具和相关生长装置的淹水的可能性。

98. 发明授权

US4661200A String stabilized ribbon growth 失效
标题翻译：弦稳定带生长
公开(公告)号：US4661200A
公开(公告)日：1987-04-28
申请号：US109865
申请日：1980-01-07
申请人： Emanuel M. Sachs
发明人： Emanuel M. Sachs
IPC分类号： C30B15/34 , C30B15/00 , C30B15/06 , C30B15/24 , H01L21/208 , C30B11/02 , B01D9/00
CPC分类号： C30B15/24 , C30B15/002 , C30B15/06 , Y10T117/1044 , Y10T117/1048
摘要： A method and apparatus for stabilizing the edge positions of a ribbon drawn from a melt includes the use of wettable strings drawn in parallel up through the melt surface, the ribbon being grown between the strings. In one embodiment, the string stabilized edge technique is utilized for pulling of the ribbon at an angle to the melt surface. String introduction techniques are also described including several in which the strings are introduced to the melt through apertures in the bottom of the crucible utilized for containing the melt. Also described is a technique for minimizing the introduction of impurities from the melt into a ribbon by constantly flowing the melt under the growth interface in a direction perpendicular to the plane of the growing ribbon.
摘要翻译：用于稳定从熔体拉出的带状物的边缘位置的方法和装置包括使用平行地穿过熔体表面绘制的可湿性串，所述带在串之间生长。在一个实施例中，线稳定边缘技术用于以与熔体表面成一定角度拉动带。还描述了字符串引入技术，其中包括几种，其中通过用于容纳熔体的坩埚底部的孔引入到熔体中。还描述了一种技术，用于通过使熔体在垂直于生长的带的平面的方向上不断地在生长界面下流动而将熔体中的杂质引入带中最小化。

99. 发明授权

US4469552A Process and apparatus for growing a crystal ribbon 失效
标题翻译：用于生长水晶带的工艺和设备
公开(公告)号：US4469552A
公开(公告)日：1984-09-04
申请号：US371351
申请日：1982-04-23
申请人： Jay W. Thornhill
发明人： Jay W. Thornhill
IPC分类号： C30B15/24 , C30B15/34 , C01B33/02
CPC分类号： C30B15/24 , Y10S117/90 , Y10T117/1044
摘要： A process and apparatus is disclosed for growing a crystal ribbon (42) of a substance of theoretically infinite length from a melt (32) of the substance. A pair of fixedly positioned edge defining members (44) are partially submerged into the melt (32) so as to break the surface (34) of the melt (32) at a predetermined distance from one another. The edge defining members (44) are wettable by the melt and the predetermined distance substantially corresponds to the width of the crystal ribbon (42) to be grown. The crystal ribbon (42) is grown by contacting the surface (34) of the melt (32) with a seed ribbon (38) between the edge defining members (44) whereby a meniscus (48) of the melt (32) is established on the seed ribbon (38). The meniscus (48) is stabilized by the meniscus (50) of the melt (32) on the edge defining members (44). Pulling the seed crystal ribbon (38) away from the melt (32) results in continuous growth of the crystal ribbon (42).
摘要翻译：公开了用于从物质的熔体（32）生长理论上无限长的物质的晶体带（42）的方法和装置。一对固定定位的边缘限定构件（44）被部分地浸入熔体（32）中，以使熔体（32）的表面（34）以预定的距离彼此分开。边缘限定构件（44）可被熔体润湿，并且预定距离基本上对应于待生长的晶体带（42）的宽度。通过使熔体（32）的表面（34）与边缘限定部件（44）之间的种子带（38）接触来生长晶体带（42），从而建立熔体（32）的弯月面（48）在种子带（38）上。弯液面（48）由边缘限定构件（44）上的熔体（32）的弯液面（50）稳定。将晶种带（38）拉离熔体（32）导致晶体带（42）的连续生长。

100. 发明授权

US4443411A Apparatus for controlling the atmosphere surrounding a crystal growth zone 失效
标题翻译：用于控制晶体生长区周围的气氛的装置
公开(公告)号：US4443411A
公开(公告)日：1984-04-17
申请号：US294737
申请日：1981-08-20
申请人： Juris P. Kalejs
发明人： Juris P. Kalejs
IPC分类号： C01B33/00 , C30B15/20 , C30B15/34 , H01L21/02 , H01L21/208
CPC分类号： C30B29/20 , C30B15/20 , C30B15/34 , Y10S117/90 , Y10T117/1044 , Y10T117/1068
摘要： Method and apparatus for using a gas mixture containing an additive gas capable of beneficially altering the physical or chemical properties of a crystallized body grown from a melt by means of a shaping member. A suitable mixture of an inert gas and the additive gas is directed substantially uniformly over the entire melt surface of the meniscus existing between the top of the shaping member and the liquid/solid growth interface at which the crystallized body is formed. The method and apparatus are particularly suited to the growing of silicon ribbons from graphite crucibles for use in the production of photovoltaic solar cells, as evidenced by a substantial increase in the average minority carrier diffusion length in the silicon ribbon grown when the gas additive is a source of oxygen.
摘要翻译：使用含有添加剂气体的气体混合物的方法和装置，该添加剂气体能够有利地改变通过成形构件从熔体生长的结晶体的物理或化学性质。惰性气体和添加气体的合适混合物基本上均匀地指向存在于成形构件的顶部与形成结晶体的液体/固体生长界面之间的弯液面的整个熔融表面上。该方法和装置特别适合于用于生产光伏太阳能电池的来自石墨坩埚的硅带的生长，这通过当气体添加剂为一种时生长的硅带中的平均少数载流子扩散长度的显着增加氧源。

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