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1. 发明授权

US5156978A Method of fabricating solar cells 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5156978A
公开(公告)日：1992-10-20
申请号：US731118
申请日：1991-07-15
申请人： Balakrishnan R. Bathey , Mary C. Cretalla , Aaron S. Taylor
发明人： Balakrishnan R. Bathey , Mary C. Cretalla , Aaron S. Taylor
IPC分类号： C30B15/00 , C30B15/04 , C30B15/34 , H01L31/0224 , H01L31/0288 , H01L31/18
CPC分类号： H01L31/182 , C30B15/00 , C30B15/04 , C30B15/34 , C30B29/60 , H01L31/022425 , H01L31/0288 , Y02E10/546 , Y02P70/521 , Y10S148/073 , Y10S438/913 , Y10T117/104
摘要： A method and apparatus for producing crystalline substrate for use in fabricating solid state electronic devices. A hollow crystalline body is grown from a melt containing a dopant and a P-N junction is formed in said crystalline body as it is being grown. Then the hollow body is severed to provide individual solar cell substrates.
摘要翻译：一种用于制造用于制造固态电子器件的结晶衬底的方法和装置。从包含掺杂剂的熔体中生长中空的结晶体，并且在所述晶体生长中形成P-N结。然后中空体被切断以提供单独的太阳能电池基板。

2. 发明授权

US06143633A In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon 失效
标题翻译：晶体生长期间掺杂杂质的原位扩散
公开(公告)号：US06143633A
公开(公告)日：2000-11-07
申请号：US725454
申请日：1996-10-04
申请人： Balakrishnan R Bathey
发明人： Balakrishnan R Bathey
IPC分类号： C30B15/04 , C30B15/34 , C30B29/64 , H01L31/18 , C30D15/04
CPC分类号： C30B15/04 , C30B15/34 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A dendritic web formation process and apparatus for diffusing dopant impurities into a growing dendritic crystal web to produce photovoltaic cells. A solid dopant diffusion source is arranged in a holder mounted in a vertical thermal element either within the melt furnace or outside the furnace adjacent the furnace exit port. The solid diffusion source is heated by thermal conduction from the vertical thermal element and source holder using the furnace heat as a source. Auxiliary heater coils are optionally provided around the vertical thermal element to control the temperature of the solid diffusion source. The source and holder can also be mounted outside the furnace adjacent the exit port and heated using a secondary rapid temperature external heater. The growing dendritic crystal web is exposed to the dopant impurities as part of the web growing process, eliminating the need for a separate diffusion gaseous station and processing.
摘要翻译：用于将掺杂剂杂质扩散到生长的树枝状晶体网中以产生光伏电池的树枝状网状物形成工艺和装置。固体掺杂剂扩散源被布置在安装在熔融炉内的垂直热元件中或与炉出口相邻的炉外部的保持器中。固体扩散源通过使用炉热作为源的垂直热元件和源保持器的热传导来加热。辅助加热器线圈可选地围绕垂直热元件设置以控制固体扩散源的温度。源和保持器也可以安装在靠近出口的炉外，并使用二次快速温度的外部加热器进行加热。生长的树枝状晶体网作为卷材生长过程的一部分暴露于掺杂杂质，消除了单独的扩散气体站和处理的需要。

3. 发明授权

US5106763A Method of fabricating solar cells 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5106763A
公开(公告)日：1992-04-21
申请号：US271514
申请日：1988-11-15
申请人： Balakrishnan R. Bathey , Mary C. Cretalla , Aaron S. Taylor
发明人： Balakrishnan R. Bathey , Mary C. Cretalla , Aaron S. Taylor
IPC分类号： C30B19/00 , C30B15/00 , C30B15/04 , C30B15/34 , H01L21/208 , H01L31/0224 , H01L31/0288 , H01L31/04 , H01L31/18
CPC分类号： H01L31/182 , C30B15/00 , C30B15/04 , C30B15/34 , C30B29/60 , H01L31/022425 , H01L31/0288 , Y02E10/546 , Y02P70/521 , Y10S148/041 , Y10S148/073 , Y10S438/907
摘要： A method and apparatus for producing crystalline substrates for use in fabricating solid state electronic devices. A hollow crystalline body is grown from a melt containing a dopant and a P-N junction is formed in said crystalline body as it is being grown. Then the hollow body is severed to provide individual solar cell substrates.

4. 发明授权

US5913980A Method for removing complex oxide film growth on silicon crystal 失效
标题翻译：去除硅晶体上复合氧化膜生长的方法
公开(公告)号：US5913980A
公开(公告)日：1999-06-22
申请号：US831606
申请日：1997-04-10
申请人： Balakrishnan R. Bathey
发明人： Balakrishnan R. Bathey
IPC分类号： C11D7/06 , C11D7/08 , C11D11/00 , H01L21/306 , H01L21/311 , H01L31/18 , B08B3/08 , C23G1/02 , C23G1/14
CPC分类号： H01L31/1804 , C11D11/0047 , C11D7/06 , C11D7/08 , H01L21/30608 , H01L21/31111 , Y02E10/547 , Y02P70/521
摘要： A method for treating thin silicon web crystals used to produce solar cells in order to remove complex SiOx contaminants from the web after growth. A dendritic silicon web with {111} surface orientation is immersed in a caustic solution of KOH or NaOH at a temperature at a range from about 80 to about 85.degree. C. for a period of about five to about ten minutes. The caustic solution quickly removes the SiOx contaminants, while leaving relatively unaffected the silicon crystal in the surface. After the caustic solution treatment, the web is rinsed in deionized water and optionally subjected to an acid cleaning with HCL or HF in order to remove any residual contaminants on the web surface.
摘要翻译：用于处理用于生产太阳能电池的薄硅纤维晶体的方法，以便在生长后从网中去除复杂的SiOx污染物。具有{111}表面取向的树枝状硅纤维网在约80-约85℃的温度下浸入KOH或NaOH的苛性溶液中约5至约10分钟。苛性溶液快速除去SiOx污染物，同时在表面上相对不影响硅晶体。在苛性碱溶液处理之后，将纸幅在去离子水中漂洗，并任选地用HCL或HF进行酸洗，以除去纸幅表面上的任何残留污染物。

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