专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20180166603A1 METHOD OF FABRICATING THIN FILM PHOTOVOLTAIC DEVICES 审中-公开
公开(公告)号：US20180166603A1
公开(公告)日：2018-06-14
申请号：US15833795
申请日：2017-12-06
申请人： Ramesh Kakkad
发明人： Ramesh Kakkad
IPC分类号： H01L31/18 , H01L31/077 , H01L31/0288 , H01L31/0368
CPC分类号： H01L31/1872 , H01L31/022425 , H01L31/0288 , H01L31/03682 , H01L31/056 , H01L31/07 , H01L31/077 , H01L31/182 , Y02E10/50 , Y02P70/521
摘要： Thin film silicon photovoltaic cell arrangements that include a heavily doped p-type polycrystalline silicon layer spaced-apart from the substrate and bottom electrode in order to reduce grain defects by initiating crystallization at a location far from the substrate. This is accomplished by forming a device structure incorporating such amorphous silicon films on a substrate and annealing at elevated temperature to crystallize the a-Si films such that the crystallization of the a-Si starts within the spaced-apart heavily doped p-type layer and proceeds through the intrinsic silicon layer.

92. 发明申请

US20180026149A1 SOLAR ANTENNA ARRAY FABRICATION 审中-公开
公开(公告)号：US20180026149A1
公开(公告)日：2018-01-25
申请号：US15661854
申请日：2017-07-27
申请人： NovaSolix, Inc.
发明人： Jyotsna IYER , Paul COMITA , Robert E. COUSINS , Laurence H. COOKE
IPC分类号： H01L31/054 , H01L31/02 , H01L31/0352
CPC分类号： H01L31/054 , H01L31/0201 , H01L31/035281 , H01L31/048 , H01L31/0543 , H01L31/0547 , H01L31/07 , H01L51/0048 , Y02E10/52
摘要： A solar antenna array may comprise an array of carbon nanotube antennas that may capture and convert sunlight into electrical power. A method for constructing the solar antenna array from a glass top down to aluminum over a plastic bottom such that light passing through the glass top and/or reflected off the aluminum both may be captured by the antennas sandwiched between. Techniques for patterning the glass to further direct the light toward the antennas and techniques for continuous flow fabrication and testing are also described.

93. 发明申请

US20170125404A1 SUPER CMOS DEVICES ON A MICROELECTRONICS SYSTEM 有权
公开(公告)号：US20170125404A1
公开(公告)日：2017-05-04
申请号：US15358049
申请日：2016-11-21
申请人： SCHOTTKY LSI, INC.
发明人： AUGUSTINE WEI-CHUN CHANG
IPC分类号： H01L27/06 , H01L27/112 , H01L31/07 , H01L21/8238 , H01L31/0376 , H01L27/11526 , H01L29/872
CPC分类号： H01L27/0629 , H01L21/8238 , H01L25/065 , H01L27/0207 , H01L27/0727 , H01L27/105 , H01L27/10897 , H01L27/112 , H01L27/11253 , H01L27/11286 , H01L27/11293 , H01L27/11526 , H01L27/11546 , H01L27/11807 , H01L28/20 , H01L29/66143 , H01L29/872 , H01L31/032 , H01L31/0376 , H01L31/03762 , H01L31/07 , H01L31/072 , H01L31/074 , H01L2924/0002 , H03K19/17728 , Y02E10/50 , H01L2924/00
摘要： This application is directed to a low cost IC solution that provides Super CMOS microelectronics macros. Hereinafter, SCMOS refers to Super CMOS and Schottky CMOS. SCMOS device solutions includes a niche circuit element, such as complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co, Ti, Ni or other metal atoms or compounds) to P- and N-Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros are composed of diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form (i) generic logic gates, (ii) functional blocks of microprocessors and microcontrollers such as but not limited to data paths, multipliers, muliplier-accumaltors, (ii) memory cells and control circuits of various types (SRAM's with single or multiple read/write port(s), binary and ternary CAM's), (iii) multiplexers, crossbar switches, switch matrices in network processors, graphics processors and other processors to implement a variety of communication protocols and algorithms of data processing engines for (iv) Analytics, (v) block-chain and encryption-based security engines (vi) Artificial Neural Networks with specific circuits to emulate or to implement a self-learning data processor similar to or derived from the neurons and synapses of human or animal brains, (vii) analog circuits and functional blocks from simple to the complicated including but not limited to power conversion, control and management either based on charge pumps or inductors, sensor signal amplifiers and conditioners, interface drivers, wireline data transceivers, oscillators and clock synthesizers with phase and/or delay locked loops, temperature monitors and controllers; all the above are built from discrete components to all grades of VLSI chips. Solar photovoltaic electricity conversion, bio-lab-on-a-chip, hyperspectral imaging (capture/sensing and processing), wireless communication with various transceiver and/or transponder circuits for ranges of frequency that extend beyond a few 100 MHz, up to multi-THz, ambient energy harvesting either mechanical vibrations or antenna-based electromagnetic are newly extended or nacent fields of the SCMOS IC applications.

94. 发明申请

US20160343899A1 PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME 审中-公开
公开(公告)号：US20160343899A1
公开(公告)日：2016-11-24
申请号：US15229604
申请日：2016-08-05
申请人： International Business Machines Corporation , EGYPT NANOTECHNOLOGY CENTER
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/18 , H01L31/20
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/028 , H01L31/056 , H01L31/07 , H01L31/075 , H01L31/20 , H01L2031/0344 , Y02E10/52 , Y02E10/548
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

95. 发明申请

US20160204290A1 BUFFER LAYER FOR HIGH PERFORMING AND LOW LIGHT DEGRADED SOLAR CELLS 有权
标题翻译：用于高性能和低光降解太阳能电池的缓冲层
公开(公告)号：US20160204290A1
公开(公告)日：2016-07-14
申请号：US15077169
申请日：2016-03-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： AUGUSTIN J. HONG , MARINUS J. HOPSTAKEN , JEEHWAN KIM , JOHN A. OTT , DEVENDRA K. SADANA
IPC分类号： H01L31/0392 , H01L31/18 , H01L31/07 , H01L31/20
CPC分类号： H01L31/03921 , H01L31/03762 , H01L31/03767 , H01L31/07 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.
摘要翻译：形成光伏器件的方法包括在透明电极和p型层之间形成缓冲层。缓冲层包括掺杂的无锗硅基材料。缓冲层具有落在透明电极和p型层的势垒能内的功函数。在p型层上形成本征层和n型层。还提供设备。

96. 发明授权

US09331217B2 Electronic gate enhancement of Schottky junction solar cells 有权
标题翻译：肖特基结太阳能电池的电子门极增强
公开(公告)号：US09331217B2
公开(公告)日：2016-05-03
申请号：US13580205
申请日：2011-04-27
申请人： Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
发明人： Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
IPC分类号： H01L31/0224 , H01L31/07
CPC分类号： H01L31/022433 , H01L31/07 , Y02E10/50
摘要： Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
摘要翻译：为肖特基结太阳能电池提供了各种系统和方法。在一个实施例中，太阳能电池包括形成在半导体层上的网格层和形成在网格层上的离子层。离子层渗透网格层并直接接触半导体层。在另一个实施例中，太阳能电池包括形成在半导体层上的第一网格层，耦合到第一网格层的第一金属化层，通过栅极电压耦合到第一金属化层的第二高表面积导电电极，以及离子层与第一网格层和第二高表面积导电电极电连通。在另一实施例中，太阳能电池包括形成在半导体层上的栅格层和与栅格层和半导体层电连通的离子层。

97. 发明申请

US20160111567A1 Photovoltaic Lead-Salt Detectors 审中-公开
标题翻译：光伏铅盐探测器
公开(公告)号：US20160111567A1
公开(公告)日：2016-04-21
申请号：US14975285
申请日：2015-12-18
申请人： Board of Regents University of Oklahoma
发明人： Zhisheng Shi , Jijun Qiu , Binbin Weng
IPC分类号： H01L31/032 , H01L31/02 , H01L27/146
CPC分类号： H01L31/0324 , H01L27/14649 , H01L31/07 , Y02E10/50
摘要： Disclosed is at least one embodiment of an infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb)-salt layer disposed on a substrate and a charge-separation-junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another non-limiting embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment.
摘要翻译：公开了红外（IR）光伏（PV）检测器的至少一个实施例，其包括设置在基板上的IV-VI引线（Pb） - 层，以及与IV-VI相关联的电荷 - 分离 - 连接（CSJ） VI铅 - 盐层，其中CSJ结构包括设置在IV-VI Pb-盐层上或其中的多个元件区域，其中多个元件区域彼此间隔开。每个元件区域可以连接到第一欧姆接触，从而形成多个互连的第一欧姆接触，并且第二欧姆接触可设置在IV-VI Pb-盐层的一部分上。在另一个非限制性实施方案中，PV检测器包括异质结区，其包含至少一个与至少一个非Pb盐层相连的IV-VI Pb-盐材料层，其中所述至少一种IV-VI Pb- 盐层和至少一个非Pb盐层形成具有II型带隙对准的pn结或肖特基结。

98. 发明授权

US09257582B2 Photodetectors and photovoltaics based on semiconductor nanocrystals 有权
标题翻译：基于半导体纳米晶体的光电检测器和光伏
公开(公告)号：US09257582B2
公开(公告)日：2016-02-09
申请号：US14456214
申请日：2014-08-11
申请人： InVisage Technologies, Inc.
发明人： Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
IPC分类号： H01L29/06 , H01L31/00 , H01L31/0352 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L31/0384 , H01L31/07
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
摘要翻译：描述复合材料。复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。

99. 发明授权

US09118026B2 Organic semiconductors as window layers for inorganic solar cells 有权
标题翻译：有机半导体作为无机太阳能电池的窗口层
公开(公告)号：US09118026B2
公开(公告)日：2015-08-25
申请号：US13232770
申请日：2011-09-14
申请人： Stephen R. Forrest , Ning Li
发明人： Stephen R. Forrest , Ning Li
IPC分类号： H01L31/07 , H01L51/42 , H01L31/18 , H01L51/00
CPC分类号： H01L51/4213 , H01L31/07 , H01L31/184 , H01L51/0053 , Y02E10/544 , Y02E10/549
摘要： Disclosed is a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. Also disclosed is a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, comprising: positioning at least one organic window layer between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. Also disclosed is a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method.
摘要翻译：公开了一种装置，包括：阳极; 阴极无机基体; 以及至少一个有机窗口层，位于：阳极和无机基底之间; 或阴极和无机基板。还公开了一种增强具有阳极，阴极和无机衬底的感光装置的性能的方法，包括：在阳极和阴极之间定位至少一个有机窗口层。在一个实施例中，有机窗口层可以吸收光并产生迁移到无机的激子，在那里它们转化为光电流，从而提高器件的效率。还公开了一种提高感光器件的肖特基势垒高度的方法，该方法基本上类似于先前定义的方法。

100. 发明申请

US20150200058A1 NANODEVICE ARRAYS FOR ELECTRICAL ENERGY STORAGE, CAPTURE AND MANAGEMENT AND METHOD FOR THEIR FORMATION 审中-公开
标题翻译：用于电力储存，捕获和管理的纳米设备阵列及其形成方法
公开(公告)号：US20150200058A1
公开(公告)日：2015-07-16
申请号：US14570921
申请日：2014-12-15
申请人： UNIVERSITY OF MARYLAND
发明人： Gary W. RUBLOFF , Sang Bok LEE , Israel PEREZ , Laurent LECORDIER , Parag BANERJEE , Chanyuan Liu , Xinyi Chen , Eleanor Gillette
IPC分类号： H01G11/26 , H01G11/56 , H01G11/58 , H01G4/008 , H01M6/18 , H01M2/02 , H01M10/056 , H01M10/36 , H01M6/04 , H01G11/30 , H01G4/005
CPC分类号： H01G11/26 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01G4/005 , H01G4/008 , H01G11/30 , H01G11/36 , H01G11/56 , H01G11/58 , H01G11/86 , H01L28/90 , H01L29/0665 , H01L29/0676 , H01L29/872 , H01L31/02008 , H01L31/035227 , H01L31/03529 , H01L31/068 , H01L31/07 , H01M2/0257 , H01M6/04 , H01M6/18 , H01M10/056 , H01M10/36 , H01M2002/0297 , Y02E10/547 , Y02E60/13 , Y10S977/742
摘要： An apparatus, system, and method are provided for a vertical two-terminal nanotube or microtube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical device can include a column disposed in a template material extending from one side of the template material to the other side of the template material. Further, the device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed in the column. A variety of configurations, variations, and modifications are provided.
摘要翻译：提供了一种用于垂直两端纳米管或微管设备的装置，系统和方法，其被配置为捕获和产生能量，存储电能，并将这些功能与功率管理电路集成。垂直装置可以包括设置在从模板材料的一侧延伸到模板材料的另一侧的模板材料中的柱。此外，装置可以包括设置在柱内的第一材料，设置在柱内的第二材料和设置在柱中的第三材料。提供了各种配置，变型和修改。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式