专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US09331217B2 Electronic gate enhancement of Schottky junction solar cells 有权
标题翻译：肖特基结太阳能电池的电子门极增强
公开(公告)号：US09331217B2
公开(公告)日：2016-05-03
申请号：US13580205
申请日：2011-04-27
申请人： Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
发明人： Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
IPC分类号： H01L31/0224 , H01L31/07
CPC分类号： H01L31/022433 , H01L31/07 , Y02E10/50
摘要： Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
摘要翻译：为肖特基结太阳能电池提供了各种系统和方法。在一个实施例中，太阳能电池包括形成在半导体层上的网格层和形成在网格层上的离子层。离子层渗透网格层并直接接触半导体层。在另一个实施例中，太阳能电池包括形成在半导体层上的第一网格层，耦合到第一网格层的第一金属化层，通过栅极电压耦合到第一金属化层的第二高表面积导电电极，以及离子层与第一网格层和第二高表面积导电电极电连通。在另一实施例中，太阳能电池包括形成在半导体层上的栅格层和与栅格层和半导体层电连通的离子层。

92. 发明申请

US20160111567A1 Photovoltaic Lead-Salt Detectors 审中-公开
标题翻译：光伏铅盐探测器
公开(公告)号：US20160111567A1
公开(公告)日：2016-04-21
申请号：US14975285
申请日：2015-12-18
申请人： Board of Regents University of Oklahoma
发明人： Zhisheng Shi , Jijun Qiu , Binbin Weng
IPC分类号： H01L31/032 , H01L31/02 , H01L27/146
CPC分类号： H01L31/0324 , H01L27/14649 , H01L31/07 , Y02E10/50
摘要： Disclosed is at least one embodiment of an infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb)-salt layer disposed on a substrate and a charge-separation-junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another non-limiting embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment.
摘要翻译：公开了红外（IR）光伏（PV）检测器的至少一个实施例，其包括设置在基板上的IV-VI引线（Pb） - 层，以及与IV-VI相关联的电荷 - 分离 - 连接（CSJ） VI铅 - 盐层，其中CSJ结构包括设置在IV-VI Pb-盐层上或其中的多个元件区域，其中多个元件区域彼此间隔开。每个元件区域可以连接到第一欧姆接触，从而形成多个互连的第一欧姆接触，并且第二欧姆接触可设置在IV-VI Pb-盐层的一部分上。在另一个非限制性实施方案中，PV检测器包括异质结区，其包含至少一个与至少一个非Pb盐层相连的IV-VI Pb-盐材料层，其中所述至少一种IV-VI Pb- 盐层和至少一个非Pb盐层形成具有II型带隙对准的pn结或肖特基结。

93. 发明授权

US09257582B2 Photodetectors and photovoltaics based on semiconductor nanocrystals 有权
标题翻译：基于半导体纳米晶体的光电检测器和光伏
公开(公告)号：US09257582B2
公开(公告)日：2016-02-09
申请号：US14456214
申请日：2014-08-11
申请人： InVisage Technologies, Inc.
发明人： Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
IPC分类号： H01L29/06 , H01L31/00 , H01L31/0352 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L31/0384 , H01L31/07
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
摘要翻译：描述复合材料。复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。

94. 发明授权

US09118026B2 Organic semiconductors as window layers for inorganic solar cells 有权
标题翻译：有机半导体作为无机太阳能电池的窗口层
公开(公告)号：US09118026B2
公开(公告)日：2015-08-25
申请号：US13232770
申请日：2011-09-14
申请人： Stephen R. Forrest , Ning Li
发明人： Stephen R. Forrest , Ning Li
IPC分类号： H01L31/07 , H01L51/42 , H01L31/18 , H01L51/00
CPC分类号： H01L51/4213 , H01L31/07 , H01L31/184 , H01L51/0053 , Y02E10/544 , Y02E10/549
摘要： Disclosed is a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. Also disclosed is a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, comprising: positioning at least one organic window layer between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. Also disclosed is a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method.
摘要翻译：公开了一种装置，包括：阳极; 阴极无机基体; 以及至少一个有机窗口层，位于：阳极和无机基底之间; 或阴极和无机基板。还公开了一种增强具有阳极，阴极和无机衬底的感光装置的性能的方法，包括：在阳极和阴极之间定位至少一个有机窗口层。在一个实施例中，有机窗口层可以吸收光并产生迁移到无机的激子，在那里它们转化为光电流，从而提高器件的效率。还公开了一种提高感光器件的肖特基势垒高度的方法，该方法基本上类似于先前定义的方法。

95. 发明申请

US20150200058A1 NANODEVICE ARRAYS FOR ELECTRICAL ENERGY STORAGE, CAPTURE AND MANAGEMENT AND METHOD FOR THEIR FORMATION 审中-公开
标题翻译：用于电力储存，捕获和管理的纳米设备阵列及其形成方法
公开(公告)号：US20150200058A1
公开(公告)日：2015-07-16
申请号：US14570921
申请日：2014-12-15
申请人： UNIVERSITY OF MARYLAND
发明人： Gary W. RUBLOFF , Sang Bok LEE , Israel PEREZ , Laurent LECORDIER , Parag BANERJEE , Chanyuan Liu , Xinyi Chen , Eleanor Gillette
IPC分类号： H01G11/26 , H01G11/56 , H01G11/58 , H01G4/008 , H01M6/18 , H01M2/02 , H01M10/056 , H01M10/36 , H01M6/04 , H01G11/30 , H01G4/005
CPC分类号： H01G11/26 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01G4/005 , H01G4/008 , H01G11/30 , H01G11/36 , H01G11/56 , H01G11/58 , H01G11/86 , H01L28/90 , H01L29/0665 , H01L29/0676 , H01L29/872 , H01L31/02008 , H01L31/035227 , H01L31/03529 , H01L31/068 , H01L31/07 , H01M2/0257 , H01M6/04 , H01M6/18 , H01M10/056 , H01M10/36 , H01M2002/0297 , Y02E10/547 , Y02E60/13 , Y10S977/742
摘要： An apparatus, system, and method are provided for a vertical two-terminal nanotube or microtube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical device can include a column disposed in a template material extending from one side of the template material to the other side of the template material. Further, the device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed in the column. A variety of configurations, variations, and modifications are provided.
摘要翻译：提供了一种用于垂直两端纳米管或微管设备的装置，系统和方法，其被配置为捕获和产生能量，存储电能，并将这些功能与功率管理电路集成。垂直装置可以包括设置在从模板材料的一侧延伸到模板材料的另一侧的模板材料中的柱。此外，装置可以包括设置在柱内的第一材料，设置在柱内的第二材料和设置在柱中的第三材料。提供了各种配置，变型和修改。

96. 发明授权

US09064991B2 Photovoltaic devices with enhanced efficiencies using high-aspect ratio nanostructures 有权
标题翻译：使用高纵横比纳米结构提高效率的光伏器件
公开(公告)号：US09064991B2
公开(公告)日：2015-06-23
申请号：US14061271
申请日：2013-10-23
申请人： International Business Machines Corporation
发明人： Supratik Guha , Oki Gunawan
IPC分类号： H01L31/0352 , H01L31/0224 , H01L31/07 , H01L31/18
CPC分类号： H01L31/035227 , H01L31/022425 , H01L31/03529 , H01L31/07 , H01L31/18 , Y02E10/50
摘要： Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.
摘要翻译：提供了用于提高效率的光伏器件和技术。一方面，提供一种光电器件。光电器件包括具有第一光活性层的光电池和与第一光活性层相邻的第二光活性层，以在第一光活性层和第二光活性层之间形成异质结; 以及在所述第二光敏层的一个或多个表面上的多个高纵横比纳米结构。多个高纵横比纳米结构被配置为用作入射光的散射介质。多个高纵横比纳米结构也可以被配置为在入射光中产生光学共振效应。

97. 发明授权

US09029686B2 Strain-enhanced silicon photon-to-electron conversion devices 有权
标题翻译：应变增强型硅光子到电子转换器件
公开(公告)号：US09029686B2
公开(公告)日：2015-05-12
申请号：US13870698
申请日：2013-04-25
申请人： Acorn Technologies, Inc.
发明人： Paul A Clifton
IPC分类号： H01L31/068 , H01L31/028 , H01L31/0352 , H01L31/0687 , H01L31/07 , H01L31/103 , H01L31/107 , H01L31/109 , H01L31/18 , H01L31/0304
CPC分类号： H01L31/068 , H01L31/028 , H01L31/0304 , H01L31/035281 , H01L31/0687 , H01L31/07 , H01L31/103 , H01L31/107 , H01L31/109 , H01L31/1804 , H01L31/1808 , H01L31/184 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins.
摘要翻译：改进的硅太阳能电池，硅图像传感器和类似的光敏器件被制成包括在器件的结或其他有源区处或足够靠近的应变硅以提供对较长波长光的增强的灵敏度。应变硅具有比常规硅更低的带隙。制造包含拉伸应变硅的太阳能电池的一种方法将一组平行的沟槽蚀刻成硅晶片并且在沟槽之间的硅散热片中引起拉伸应变。该方法可以通过用压缩应变的氮化硅或氧化硅填充沟槽来引起硅散热片中的拉伸应变。压缩应变氮化硅的沉积层粘附到沟槽的壁上并在相邻的硅散热片的平面中产生双轴拉伸应变。

98. 发明授权

US09024367B2 Field-effect P-N junction 有权
标题翻译：场效应P-N结
公开(公告)号：US09024367B2
公开(公告)日：2015-05-05
申请号：US13773985
申请日：2013-02-22
申请人： The Regents of the University of California
发明人： William Regan , Alexander Zettl
IPC分类号： H01L29/68 , H01L31/07 , H01L29/66 , H01L31/06
CPC分类号： H01L29/68 , H01L29/66356 , H01L31/06 , H01L31/062 , H01L31/07 , Y02E10/50
摘要： This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.
摘要翻译：本公开提供了与场效应p-n结相关的系统，方法和装置。在一个方面，一种器件包括欧姆接触，设置在欧姆接触上的半导体层，设置在半导体层上的至少一个整流触点，包括设置在至少一个整流触点和半导体层上的层的栅极和栅极触点设置在层上。整流触点的横向宽度小于半导体层的半导体耗尽宽度。栅极触点电连接到欧姆接触，以产生自门控反馈回路，其被配置为保持栅极的栅极电场。

99. 发明申请

US20140326303A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20140326303A1
公开(公告)日：2014-11-06
申请号：US14361912
申请日：2012-12-05
申请人： BRIDGESTONE CORPORATION
发明人： Osamu Shiino , Kenji Okino , Masato Yoshikawa , Mari Miyano , Satoshi Nakamura , Yukiko Yamamoto
IPC分类号： H01L31/07 , H01L31/042 , H01L31/18
CPC分类号： H01L31/07 , H01L31/022425 , H01L31/0324 , H01L31/042 , H01L31/1828 , H01L31/186 , H01L51/0037 , H01L51/4233 , H01L51/426 , Y02E10/549 , Y02P70/521
摘要： A solar cell (1) according to the invention is formed by stacking a first electrode layer (1C), a semiconductor layer (1A), and a second electrode layer (1D). The first electrode layer (1C) is placed on a light-irradiated surface side of the semiconductor layer (1A). The first electrode layer (1C) and the semiconductor layer (1A) are joined together with a Schottky junction interface in between. The second electrode layer (1D) is placed on an opposite side of the semiconductor layer (1A) from the light-irradiated surface. The second electrode layer (1D) and the semiconductor layer (1A) are joined together in ohmic contact with each other. The first electrode layer (1C) includes a visible light absorbing material.
摘要翻译：根据本发明的太阳能电池（1）通过层叠第一电极层（1C），半导体层（1A）和第二电极层（1D）而形成。第一电极层（1C）被放置在半导体层（1A）的光照射表面侧。第一电极层（1C）和半导体层（1A）之间用肖特基结界面连接在一起。第二电极层（1D）被放置在半导体层（1A）的与光照射表面相反的一侧。第二电极层（1D）和半导体层（1A）彼此以欧姆接触的方式接合在一起。第一电极层（1C）包括可见光吸收材料。

100. 发明申请

US20140196780A1 PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME 审中-公开
标题翻译：具有接口带隙修改结构的光电装置及其形成方法
公开(公告)号：US20140196780A1
公开(公告)日：2014-07-17
申请号：US14218410
申请日：2014-03-18
申请人： Egypt Nanotechnology Center , International Business Machines Corporation
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/07 , H01L31/075 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/028 , H01L31/056 , H01L31/07 , H01L31/075 , H01L31/20 , H01L2031/0344 , Y02E10/52 , Y02E10/548
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
摘要翻译：在p掺杂半导体层和光伏器件的透明导电材料层之间提供肖特基势垒减少层。肖特基势垒减少层可以是具有大于透明导电材料层的功函数的功函数的导电材料层。导电材料层可以是诸如碳纳米管层或石墨烯层的碳材料层。或者，导电材料层可以是具有比透明导电材料层更大的功函数的另一透明导电材料层。肖特基势垒的减小降低了透明材料层和p掺杂半导体层的接触电阻，从而降低了串联电阻并提高了光伏器件的效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式