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91. 发明申请

US20160057875A1 Semiconductor Module with Gripping Sockets, Methods for Gripping, for Moving and for Electrically Testing a Semiconductor Module 审中-公开
标题翻译：具有夹持插座的半导体模块，夹持方法，移动和电子测试半导体模块
公开(公告)号：US20160057875A1
公开(公告)日：2016-02-25
申请号：US14830333
申请日：2015-08-19
申请人： Infineon Technologies AG
发明人： Rene Cordes , Christoph Koch , Michael Larisch , Sven Schennetten
IPC分类号： H05K5/02 , H01L21/687 , G01R31/28 , B25J11/00 , H05K5/00 , G01R31/26
CPC分类号： H05K5/023 , B25J11/0095 , G01R31/2607 , G01R31/2893 , G01R31/44 , H01L21/68728 , H01L21/68735 , H01L21/68778 , H01L2224/32225 , H05K5/0065 , H05K5/0069 , H05K5/0091
摘要： One aspect of the invention relates to a semiconductor module with an outer housing having four side walls, and a circuit carrier, which is mounted on the outer housing and has an upper side and a lower side opposite the upper side. A semiconductor chip is arranged on the upper side and in the outer housing. A first gripping socket, which is formed as an indentation, extends from the outer side of the outer housing into a first of the side walls.
摘要翻译：本发明的一个方面涉及具有外壳体的四个侧壁的半导体模块和安装在外壳上并具有与上侧相对的上侧和下侧的电路载体。半导体芯片布置在上侧和外壳中。形成为凹陷的第一夹持槽从外壳的外侧延伸到第一侧壁中。

92. 发明申请

US20160042988A1 SEMICONDUCTOR PROCESS CARRIER 审中-公开
标题翻译：半导体工艺载体
公开(公告)号：US20160042988A1
公开(公告)日：2016-02-11
申请号：US14781757
申请日：2013-10-24
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , CARRIER INTEGRATION INC.
发明人： Taro ITATANI , Hiroyuki ISHII , Yoshiyuki AMANO , Tsuneyuki HAYASHI
IPC分类号： H01L21/687 , B25J15/00 , H01L21/683
CPC分类号： H01L21/68735 , B25J15/0014 , H01L21/6831 , H01L21/6835 , H01L21/6838 , H01L2221/68309 , H01L2221/68313
摘要： An adapter is provided which is used when a process for a small-diameter semiconductor substrate (small substrate) is performed by using a semiconductor manufacturing apparatus for large-diameter silicon substrates. The small substrate is attached to an adapter plate that compensates for differences in size, so that the small substrate is prevented from falling even when the small substrate is in a vertical or inverted direction. To process the small substrate with the semiconductor manufacturing apparatus for large-diameter silicon substrates, an opening 10 is formed in a transferring base portion 1, which is formed of a large-diameter silicon substrate, and a polyimide film 2 is attached to the rear surface of the transferring base portion 1, so that the small substrate can be retained by a vacuum chuck or an electrostatic chuck.
摘要翻译：提供一种适配器，其通过使用用于大直径硅衬底的半导体制造装置进行小直径半导体衬底（小衬底）的处理时使用。小基板附接到适配器板，其补偿尺寸的差异，使得即使当小基板处于垂直或反向的方向时也防止小基板掉落。为了利用用于大直径硅衬底的半导体制造装置来处理小衬底，在由大直径硅衬底形成的转印基底部分1中形成开口10，并且将聚酰亚胺膜2附接到后部转印基部1的表面，使得小的基板能够被真空卡盘或静电卡盘保持。

93. 发明授权

US09224632B2 Substrate holding apparatus, exposure apparatus, and device fabricating method 有权
标题翻译：基板保持装置，曝光装置和装置制造方法
公开(公告)号：US09224632B2
公开(公告)日：2015-12-29
申请号：US11792924
申请日：2005-12-14
申请人： Makoto Shibuta
发明人： Makoto Shibuta
IPC分类号： G03F7/00 , H01L21/683 , H01L21/687 , G03F7/20
CPC分类号： G03F7/70341 , G03F7/2041 , G03F7/707 , G03F7/70716 , G03F7/70875 , H01L21/6838 , H01L21/68735 , H01L21/6875
摘要： To provide a substrate holding apparatus that can rapidly recover liquid that has infiltrated the rear surface side of a substrate. A substrate holding apparatus comprises: a base; a first support part, which is formed on the base and supports a rear surface of a substrate to be processed; a first circumferential wall part, which is formed on the base and is provided so that it opposes the rear surface of the substrate to be processed and surrounds the first support part; and a first recovery port, which is provided on the outer side of the first circumferential wall part; wherein, the flow of a gas along the first circumferential wall part moves the liquid on the outer side of the first circumferential wall part to the first recovery port, where the liquid is recovered.
摘要翻译：提供一种能够快速地回收渗透到基板的背面侧的液体的基板保持装置。一种基板保持装置，包括：基座; 第一支撑部，其形成在基部上并支撑待处理基板的后表面; 第一圆周壁部，其形成在基部上并且设置成使得其与要处理的基板的后表面相对并且包围第一支撑部; 以及设置在所述第一周壁部的外侧的第一回收口，其特征在于，沿着所述第一周壁部的气体的流动将所述第一周壁部的外侧的液体移动到所述液体被回收的所述第一回收口。

94. 发明授权

US09196512B2 Focus ring and manufacturing method therefor 有权
标题翻译：聚焦环及其制造方法
公开(公告)号：US09196512B2
公开(公告)日：2015-11-24
申请号：US13166046
申请日：2011-06-22
申请人： Yoshiyuki Kobayashi , Jun Watanabe , Takuya Okada , Tomoyuki Nara
发明人： Yoshiyuki Kobayashi , Jun Watanabe , Takuya Okada , Tomoyuki Nara
IPC分类号： C23F1/08 , B05D1/12 , B05D5/00 , B05D3/06 , H01L21/67 , H01J37/32 , H01L21/687
CPC分类号： H01J37/32642 , C23C16/48 , C23C16/50 , H01J37/32009 , H01J37/3244 , H01J37/32715 , H01L21/67103 , H01L21/68735
摘要： There is provided a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The focus ring is arranged to surround a periphery of a substrate mounted on the mounting table having a temperature control device. Further, the focus ring includes a flexible heat transfer sheet. Furthermore, the focus ring is in contact with the mounting table via the heat transfer sheet, and the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface.
摘要翻译：提供了能够防止传热片的一部分粘附并保持在安装台上的聚焦环。聚焦环布置成围绕安装在具有温度控制装置的安装台上的基板的周边。此外，聚焦环包括柔性传热片。此外，聚焦环经由传热片与安装台接触，并且传热片具有与安装台接触的接触表面和形成在接触表面上的防粘附层。

95. 发明授权

US09165812B2 Cooled tape frame lift and low contact shadow ring for plasma heat isolation 有权
标题翻译：冷却带架提升和低接触阴影环，用于等离子体热隔离
公开(公告)号：US09165812B2
公开(公告)日：2015-10-20
申请号：US14219851
申请日：2014-03-19
申请人： Applied Materials, Inc.
发明人： Alan Hiroshi Ouye
IPC分类号： H01L21/46 , H01L21/465 , H01L21/683 , H01L21/78
CPC分类号： H01L21/683 , H01J37/32366 , H01J37/32522 , H01J37/32642 , H01J37/32651 , H01J37/32715 , H01J37/32724 , H01J2237/33 , H01L21/3065 , H01L21/67109 , H01L21/67207 , H01L21/6836 , H01L21/68735 , H01L21/68742 , H01L21/6875 , H01L21/78 , H01L2221/68327 , H01L2221/68377
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a tape frame lift assembly for a plasma processing chamber includes a capture single ring having an upper surface for supporting a tape frame of a substrate support and for cooling the tape frame. The tape frame lift assembly also includes one or more capture lift arms for moving the capture single ring to and from transfer and processing positions. The tape frame assembly also includes one or more captured lift plate portions, one captured lift plate portion corresponding to one capture lift arm, the one or more captured lift plate portions for coupling the one or more capture lift arms to the capture single ring.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个示例中，用于等离子体处理室的带框架提升组件包括捕获单环，其具有用于支撑基板支撑件的带框架并用于冷却带框架的上表面。带框架提升组件还包括一个或多个捕获提升臂，用于将捕获单环移动到传送和处理位置。带框架组件还包括一个或多个捕获的升降板部分，一个捕获的升降板部分对应于一个捕获提升臂，一个或多个捕获的升降板部分用于将一个或多个捕获提升臂联接到捕获单环。

96. 发明授权

US09127374B2 Epitaxial growth method 有权
标题翻译：外延生长法
公开(公告)号：US09127374B2
公开(公告)日：2015-09-08
申请号：US14582704
申请日：2014-12-24
申请人： SUMCO CORPORATION
发明人： Masayuki Ishibashi , John F. Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
IPC分类号： C23C16/00 , C30B25/12 , H01L21/20 , H01L21/22 , H01L21/687 , C23C16/455 , C23C14/50 , C23C14/54 , C23C16/458 , C30B29/06 , H01L21/02
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.
摘要翻译：一种通过将晶片安装在基座袋内而在半导体晶片的表面上生长外延膜的方法，并且将源气体和载气供应到基座的上表面侧，并将载体气体供应到基座的下表面侧。感受体包括基本上圆形的底壁和包围底壁的侧壁以形成用于安装晶片的口袋，其中多个圆形通孔形成在外壁区域的底壁中，距离高达约1/2 朝向底壁中心的半径。通孔的总开口面积为底壁表面积的0.05〜55％，各贯通孔的开口面积为0.2〜3.2mm 2，通孔密度为0.25〜25 每平方厘米。

97. 发明申请

US20150221534A1 STACKED PROCESS MODULES FOR A SEMICONDUCTOR HANDLING SYSTEM 审中-公开
标题翻译：用于半导体处理系统的堆叠处理模块
公开(公告)号：US20150221534A1
公开(公告)日：2015-08-06
申请号：US14611697
申请日：2015-02-02
申请人： BROOKS AUTOMATION, INC.
发明人： Peter van der Meulen
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67167 , B25J9/042 , H01L21/67126 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67253 , H01L21/67259 , H01L21/67706 , H01L21/67727 , H01L21/67733 , H01L21/67736 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67754 , H01L21/67757 , H01L21/67781 , H01L21/68 , H01L21/68707 , H01L21/68735 , Y10S414/135 , Y10S414/137 , Y10S414/139 , Y10T74/20305
摘要： A substrate transport apparatus having a drive section, an articulated arm operably connected to the drive section, and an end effector connected to the articulated arm, the end effector being configured for holding a substrate thereon and transporting the substrate through articulation of the articulated arm. The end effector is a substantially flat and elongated member, depending from the articulated arm at a base end of the end effector, and extending longitudinally so that the end effector engages edges of the substrate on both proximal and distal sides with respect to the base end. The end effector has a lateral cross section that tapers in a longitudinal portion of the end effector extending between the base end and a distal end of the end effector, the lateral cross section being tapered, along the longitudinal portion, in at least two different directions that are angled and crossing each other.
摘要翻译：具有驱动部分，可操作地连接到驱动部分的关节臂以及连接到铰接臂的端部执行器的基底输送装置，该末端执行器构造成用于在其上保持基底并且通过铰接臂的铰接运送基底。末端执行器是基本上平坦且细长的构件，其从端部执行器的基端处的铰接臂垂直延伸并且纵向延伸，使得末端执行器相对于基端部在近侧和远侧两侧接合基板的边缘。末端执行器具有侧向横截面，该横截面在端部执行器的纵向部分中逐渐变细，该纵向部分在基端和端部执行器的远端之间延伸，横向截面沿着纵向部分在至少两个不同的方向上是渐缩的它们是相互交叉的。

98. 发明授权

US09099514B2 Wafer holder with tapered region 有权
标题翻译：晶圆座具有锥形区域
公开(公告)号：US09099514B2
公开(公告)日：2015-08-04
申请号：US13426334
申请日：2012-03-21
申请人： Yi-Hung Lin , Li-Ting Wang , Tze-Liang Lee
发明人： Yi-Hung Lin , Li-Ting Wang , Tze-Liang Lee
IPC分类号： A47G19/08 , H01L21/687 , H01L21/683 , H01L21/477 , H01L21/306 , H01L21/673
CPC分类号： H05B1/0233 , F27B17/0025 , F27D5/0037 , H01L21/306 , H01L21/477 , H01L21/67115 , H01L21/67303 , H01L21/683 , H01L21/68735 , H01L21/68757
摘要： An apparatus, a system and a method are disclosed. An exemplary apparatus includes a wafer holder including a first portion and a second portion. The first and second portions are formed of the same continuous material. The first portion includes a first upper surface and a first lower surface, and the second portion including a second upper surface and a second lower surface. The apparatus further includes an interface between the first and second portions. The interface provides for a transition such that the first upper surface of the first portion tends toward the second upper surface of the second portion. The apparatus further includes a tapered region formed in the first portion. The tapered region starts at a radial distance from a center line of the wafer holder and terminates at the interface. The tapered region has an initial thickness that gradually decreases to a final thickness.
摘要翻译：公开了一种装置，系统和方法。示例性装置包括具有第一部分和第二部分的晶片保持器。第一和第二部分由相同的连续材料形成。第一部分包括第一上表面和第一下表面，第二部分包括第二上表面和第二下表面。该装置还包括第一和第二部分之间的界面。界面提供了使得第一部分的第一上表面趋向于第二部分的第二上表面的过渡。该装置还包括形成在第一部分中的锥形区域。锥形区域从距离晶片保持器的中心线的径向距离开始，并且在界面处终止。锥形区域具有逐渐减小到最终厚度的初始厚度。

99. 发明申请

US20150190835A1 EXTENDED LIFE DEPOSITION RING 审中-公开
标题翻译：延长生命沉积环
公开(公告)号：US20150190835A1
公开(公告)日：2015-07-09
申请号：US14663384
申请日：2015-03-19
申请人： Applied Materials, Inc.
发明人： Lara HAWRYLCHAK
IPC分类号： B05B15/04
CPC分类号： H01L21/68735 , C23C16/4585
摘要： A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body.
摘要翻译：提供了一种用于半导体处理室的处理套件。在一个实施例中，处理套件包括环形沉积环主体，其包括凹入主体的上表面的槽，其中槽的最低点延伸到由顶壁限定的至少一半的环体的厚度，一个底壁。在另一个实施例中，处理套件包括环形沉积环体，其包括限定主体上表面的至少一部分的倾斜上壁，其中，倾斜的上壁的峰从主体的内壁延伸至至少内壁与身体外壁之间的一半距离。

100. 发明授权

US09059228B2 Substrate table, immersion lithographic apparatus and device manufacturing method 有权
标题翻译：基板，浸没式光刻设备及器件制造方法
公开(公告)号：US09059228B2
公开(公告)日：2015-06-16
申请号：US12721867
申请日：2010-03-11
申请人： Marco Koert Stavenga , Sergei Shulepov , Koen Steffens , Matheus Anna Karel Van Lierop , Samuel Bertrand Dominique David , David Bessems
发明人： Marco Koert Stavenga , Sergei Shulepov , Koen Steffens , Matheus Anna Karel Van Lierop , Samuel Bertrand Dominique David , David Bessems
IPC分类号： G03B27/58 , G03B27/60 , H01L21/68 , G03F7/20 , H01L21/687
CPC分类号： G03F7/70716 , G03F7/70341 , G03F7/707 , G03F7/70866 , H01L21/68 , H01L21/68735
摘要： A substrate table for an immersion lithographic apparatus is disclosed having a recess, configured to receive a substrate of a given size, and a fluid extraction system, configured to extract fluid from a gap between the edge of the substrate and the edge of the recess, the fluid extraction system configured such that the rate of flow of fluid extracted from a localized section of the gap is greater than the rate of flow of fluid extracted from another section of the gap.
摘要翻译：公开了一种用于浸没式光刻设备的衬底台，其具有构造成容纳给定尺寸的衬底的凹部和流体提取系统，其被配置为从衬底的边缘和凹部的边缘之间的间隙中提取流体，流体提取系统被配置为使得从间隙的局部区域提取的流体的流速大于从间隙的另一部分提取的流体的流动速率。

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