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91. 发明申请

US20040238817A1 Ultrathin oxide films on semiconductors 审中-公开
标题翻译：半导体上的超薄氧化膜
公开(公告)号：US20040238817A1
公开(公告)日：2004-12-02
申请号：US10886185
申请日：2004-07-07
申请人： The Board of Trustees of the University of Illinois
发明人： Walter G. Klemperer , Jason Lee , Erik A. Mikalsen , David A. Payne
IPC分类号： H01L029/12
CPC分类号： H01L21/02189 , C23C18/04 , C23C18/1216 , C23C18/1225 , C23C18/1275 , C23C18/14 , H01L21/02282 , H01L21/316
摘要： A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr4(OPrn)16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.
摘要翻译：制造半导体结构的方法包括使半导体的表面与包含Zr 4（OPr n）16的液体接触以形成改性表面，活化改性表面，并重复接触和活化以形成氧化锆层半导体表面。

92. 发明申请

US20040209455A1 Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film 审中-公开
标题翻译：用于形成绝缘膜的半导体器件和涂层溶液的绝缘膜和制造绝缘膜的方法
公开(公告)号：US20040209455A1
公开(公告)日：2004-10-21
申请号：US10848154
申请日：2004-05-19
申请人： Kawasaki Microelectronics, Inc.
发明人： Tadashi Nakano , Kyoji Tokunaga
IPC分类号： H01L021/4763
CPC分类号： H01L21/02282 , C09D183/04 , H01L21/02216 , H01L21/02337 , H01L21/316
摘要： An insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, an insulating film forming coating solution for forming the insulating film, and a method of manufacturing the insulating film are set forth. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR)3, methyltrialkoxysilane expressed by a general formula, SiCH3(OR)3, and tetraalkoxysilane expressed by a general formula, Si(OR)4 is coated on a semiconductor substrate (1) having a step portion, and after it is dried and heated in an inert gas atmosphere, an insulating film (6) which is composed of a silane-derived compound expressed by a general formula, SiHx(CH3)yO2null(xnully)/2, where, 0
摘要翻译：绝缘膜不仅能够获得良好的膜质量，而且能够同时获得优异的填充性能，厚膜形成和平坦化，设置用于形成绝缘膜的绝缘膜形成用涂布液和绝缘膜的制造方法向前。以通式SiH（OR）3，由通式SiCH 3（OR）3表示的甲基三烷氧基硅烷，四烷氧基硅烷等）表示的三烷氧基硅烷的共水解而得到的聚合物溶液作为主要成分的绝缘膜形成用涂布液由通式表示的Si（OR）4涂覆在具有阶梯部分的半导体衬底（1）上，并且在惰性气体气氛中干燥和加热之后，将由硅烷组成的绝缘膜（6）由SiHx（CH3）yO2-（x + y）/ 2表示的衍生化合物，其中，0

93. 发明授权

US06794309B2 Method for utilizing rough insulator to enhance metal-insulator-semiconductor reliability 有权
标题翻译：利用粗糙绝缘子提高金属绝缘体半导体可靠性的方法
公开(公告)号：US06794309B2
公开(公告)日：2004-09-21
申请号：US10122572
申请日：2002-04-15
申请人： Chee-Wee Liu , Fon Yuan , Chung-Hsun Lin
发明人： Chee-Wee Liu , Fon Yuan , Chung-Hsun Lin
IPC分类号： H01L2131
CPC分类号： H01L21/02299 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02236 , H01L21/02238 , H01L21/02241 , H01L21/02258 , H01L21/02271 , H01L21/28185 , H01L21/30604 , H01L21/3144 , H01L21/316 , H01L21/3185 , H01L29/42364 , H01L29/495 , H01L29/518
摘要： A method for utilizing a rough insulator to enhance metal-insulator-semiconductor reliability is provided. The method includes steps of: (a) providing a semiconductor substrate; (b) prebaking the semiconductor substrate under a relatively high vacuum to form a rough surface on the semiconductor substrate; and (c) growing an insulator on the semiconductor substrate to form a rough insulator and increase the metal-insulator-semiconductor reliability when the insulator is applied.
摘要翻译：提供了一种利用粗糙绝缘体来增强金属 - 绝缘体 - 半导体可靠性的方法。该方法包括以下步骤：（a）提供半导体衬底; （b）在相对高的真空下预烘烤半导体衬底以在半导体衬底上形成粗糙表面; 和（c）在半导体衬底上生长绝缘体以形成粗糙的绝缘体，并且当施加绝缘体时增加金属 - 绝缘体 - 半导体的可靠性。

94. 发明授权

US06770574B2 Method of forming a dielectric layer 有权
标题翻译：形成电介质层的方法
公开(公告)号：US06770574B2
公开(公告)日：2004-08-03
申请号：US10080119
申请日：2002-02-21
申请人： Don Carl Powell , Garry Anthony Mercaldi
发明人： Don Carl Powell , Garry Anthony Mercaldi
IPC分类号： H01L21469
CPC分类号： H01L21/02238 , H01L21/02164 , H01L21/0217 , H01L21/02247 , H01L21/3144 , H01L21/316 , H01L21/31683 , H01L29/78
摘要： Methods for fabricating a dielectric layer are provided. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of the deposited material to form the dielectric layer. The silicon-containing dielectric layer can allow for improved or smaller semiconductor devices. Improved or smaller semiconductor devices may be accomplished by reducing leakage and increasing the dielectric constant.
摘要翻译：提供制造介电层的方法。在一个实施例中，将含硅材料沉积在基底上。沉积的材料用反应剂处理以与沉积材料的硅原子反应以形成电介质层。含硅介电层可以允许改进或更小的半导体器件。可以通过减少泄漏和增加介电常数来实现改进的或更小的半导体器件。

95. 发明授权

US06767775B1 Method of manufacturing thin-film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06767775B1
公开(公告)日：2004-07-27
申请号：US09701648
申请日：2000-11-30
申请人： Ichio Yudasaka , Tatsuya Shimoda , Shunichi Seki
发明人： Ichio Yudasaka , Tatsuya Shimoda , Shunichi Seki
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , G02F1/1368 , H01L21/02422 , H01L21/02532 , H01L21/02628 , H01L21/288 , H01L21/316 , H01L27/1292 , H01L29/66757
摘要： All or a part of the thin films such as the silicon film, insulation film and conductive film are formed using liquid materials. The main method includes the steps of forming a coating film by coating the liquid material on the substrate, and heat-treating the coating film for converting it into a desired thin film, thereby enabling the thin film transistor to be manufactured using a cheap manufacturing equipment.
摘要翻译：使用液体材料形成全部或一部分薄膜，例如硅膜，绝缘膜和导电膜。主要方法包括以下步骤：通过将液体材料涂覆在基材上形成涂膜，并对涂膜进行热处理以将其转化为所需的薄膜，从而使薄膜晶体管能够使用便宜的制造设备。

96. 发明申请

US20040129558A1 Method of metal sputtering for integrated circuit metal routing 失效
标题翻译：金属溅射方法用于集成电路金属布线
公开(公告)号：US20040129558A1
公开(公告)日：2004-07-08
申请号：US10336871
申请日：2003-01-06
申请人： Megic Corporation
发明人： Hsien-Tsung Liu , Chien-Kang Chou , Ching-San Lin
IPC分类号： C23C014/32 , H01L021/311
CPC分类号： C23C14/564 , C23C14/022 , H01L21/0206 , H01L21/2855 , H01L21/316 , H01L21/32051 , H01L24/11 , H01L2224/02126 , H01L2224/0231 , H01L2224/0401 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/1147 , H01L2224/13099 , H01L2924/01005 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/013
摘要： A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer. The portions of the metal barrier layer not under the at least two adjacent upper metal structures are etched and removed from over the wafer exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.
摘要翻译：一种金属溅射方法，包括以下步骤。晶片保持器和室的内壁涂覆有调味层，调味层包括：a）可在金属阻挡层蚀刻工艺中蚀刻的材料; 或b）绝缘或非导电材料。将具有两个或更多个晶片导电结构的晶片放置在调味层涂覆的晶片保持器上。清洁晶片，其中一部分调味层在相邻的晶片导电结构之上和相邻的晶片导电结构之间重新沉积在晶片上。在晶片上形成金属阻挡层。将晶片从腔室中取出，并且在金属阻挡层的至少一部分上形成至少两个相邻的上部金属结构。金属阻挡层不在至少两个相邻的上部金属结构之下的部分被蚀刻并从晶片的上方移除，使用金属阻挡层蚀刻工艺暴露部分再沉积的调节层部分，其也去除了由金属阻挡层蚀刻工艺中可蚀刻的材料组成的再沉积的调味层部分。

97. 发明授权

US06723633B2 Method for forming multi-layer wiring structure 失效
公开(公告)号：US06723633B2
公开(公告)日：2004-04-20
申请号：US10291456
申请日：2002-11-07
申请人： Hiroyuki Iida , Kazuto Ohbuchi , Atsushi Matsushita , Yoshio Hagiwara
发明人： Hiroyuki Iida , Kazuto Ohbuchi , Atsushi Matsushita , Yoshio Hagiwara
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/31138 , H01L21/3122 , H01L21/316 , H01L21/76801 , H01L21/76802 , H01L21/76826 , H01L21/76832
摘要： For suppressing decomposition of an organic group (for example, a CH3 group) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer directly on a lower wiring layer or on a predetermined film including a hillock protection layer which is formed on the lower wiring layer in advance; forming an upper wiring layer on the organic SOG layer without using an etching back process; forming a via hole through an etching process by using a patterned resist layer provided on the upper wiring layer as a mask; performing an ashing process with a plasma by making ions or radicals which are induced from oxygen gas as a main reactant, under an atmospheric pressure ranging from 0.01 Torr to 30.0 Torr; and filling said via hole with a conductive material so as to electrically connect the lower wiring layer to the upper wiring layer.

98. 发明申请

US20040072429A1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20040072429A1
公开(公告)日：2004-04-15
申请号：US10674382
申请日：2003-10-01
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Katsuhiko Hieda , Atsuko Kawasaki , Masahiro Kiyotoshi , Katsuhiko Tachibana , Soichi Yamazaki
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/02222 , H01L21/02164 , H01L21/02282 , H01L21/02304 , H01L21/02318 , H01L21/02337 , H01L21/31111 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/31683 , H01L21/76224 , H01L21/76229
摘要： There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.
摘要翻译：公开了一种制造半导体器件的方法，其中在硅衬底的表面上形成Si 3 N 4膜作为掩模构件，然后蚀刻以形成STI沟槽。将过氢化硅氮烷聚合物的溶液涂布在其上形成有STI沟槽的硅衬底的表面上，以在其上沉积涂膜（PSZ膜）。去除沉积在掩模构件上的PSZ膜，使PSZ膜的一部分留在沟槽内，其中控制PSZ膜的厚度使其从STI沟槽底部的高度变为600nm以下。然后，在含水蒸汽的气氛中对PSZ膜进行热处理，通过PSZ膜的化学反应将PSZ膜转换成氧化硅膜。随后，对氧化硅膜进行热处理以使氧化硅膜致密化。

99. 发明申请

US20030198895A1 Method of passivating of low dielectric materials in wafer processing 失效
标题翻译：在晶圆加工中钝化低介电常数材料的方法
公开(公告)号：US20030198895A1
公开(公告)日：2003-10-23
申请号：US10379984
申请日：2003-03-04
发明人： Dorel Ioan Toma , Paul Schilling
IPC分类号： G03F007/16 , G03F007/40 , H01L021/31 , H01L021/311 , H01L021/469
CPC分类号： C23C8/10 , C23C26/00 , C23C30/00 , H01L21/02063 , H01L21/02101 , H01L21/02126 , H01L21/02137 , H01L21/02203 , H01L21/02343 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3125 , H01L21/316 , H01L21/31629 , H01L21/31633
摘要： A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS) and chlorotrimethylsilane (TMCS) and combinations thereof. The silicon oxide-based low-k material, in accordance with embodiments of the invention, is maintained at temperatures in a range of 40 to 200 degrees Celsius, and preferably at a temperature of about 150 degrees Celsius, and at pressures in a range of 1,070 to 9,000 psi, and preferably at a pressure of about 3,000 psi, while being exposed to the supercritical passivating solution. In accordance with further embodiments of the invention, a silicon oxide-based low-k material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.
摘要翻译：公开了一种使用包含甲硅烷化剂的超临界二氧化碳钝化溶液钝化基于氧化硅的低k材料的方法。甲硅烷基化剂优选为包含具有五个碳原子的有机基团的有机硅化合物，例如六甲基二硅氮烷（HMDS）和氯代三甲基硅烷（TMCS）及其组合。根据本发明的实施方案的基于氧化硅的低k材料保持在40至200摄氏度的温度，优选在约150摄氏度的温度下，并且在 1,070至9,000psi，优选在约3,000psi的压力下，同时暴露于超临界钝化溶液。根据本发明的另外的实施方案，使用超临界二氧化碳清洗溶液同时清洗和钝化基于氧化硅的低k材料。

100. 发明申请

US20030162409A1 METHOD FOR UTILIZING ROUGH INSULATOR TO ENHANCE METAL-INSULATOR-SEMICONDUCTOR RELIABILITY 有权
标题翻译：使用粗糙绝缘体以提高金属绝缘体半导体可靠性的方法
公开(公告)号：US20030162409A1
公开(公告)日：2003-08-28
申请号：US10122572
申请日：2002-04-15
申请人： National Taiwan University
发明人： Chee-Wee Liu , Fon Yuan , Chung-Hsun Lin
IPC分类号： H01L021/31 , H01L021/469
CPC分类号： H01L21/02299 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02236 , H01L21/02238 , H01L21/02241 , H01L21/02258 , H01L21/02271 , H01L21/28185 , H01L21/30604 , H01L21/3144 , H01L21/316 , H01L21/3185 , H01L29/42364 , H01L29/495 , H01L29/518
摘要： A method for utilizing a rough insulator to enhance metal-insulator-semiconductor reliability is provided. The method includes steps of: (a) providing a semiconductor substrate; (b) prebaking the semiconductor substrate under a relatively high vacuum to form a rough surface on the semiconductor substrate; and (c) growing an insulator on the semiconductor substrate to form a rough insulator and increase the metal-insulator-semiconductor reliability when the insulator is applied.
摘要翻译：提供了一种利用粗糙绝缘体来增强金属 - 绝缘体 - 半导体可靠性的方法。该方法包括以下步骤：（a）提供半导体衬底; （b）在相对高的真空下预烘烤半导体衬底以在半导体衬底上形成粗糙表面; 和（c）在半导体衬底上生长绝缘体以形成粗糙的绝缘体，并且当施加绝缘体时增加金属 - 绝缘体 - 半导体的可靠性。

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