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91. 发明申请

US20050024900A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050024900A1
公开(公告)日：2005-02-03
申请号：US10895083
申请日：2004-07-21
申请人： Yoshiaki Hachiya
发明人： Yoshiaki Hachiya
IPC分类号： G05F1/66 , G05F3/26 , H02M1/00 , H02M3/155 , H02M3/156 , H02M3/335
CPC分类号： H02M3/156 , H02M1/32 , H02M2001/0032 , Y02B70/16
摘要： The present invention relates to a semiconductor device that is employed in a switching power supply for which a higher output is required, prevents noise from the coil, transformer, and so forth and implements a high efficiency power supply. By connecting a current mirror circuit including a p-type MOSFET, an overcurrent detection level tuning circuit, an overcurrent detection circuit, and an intermittent oscillation control circuit to an FB terminal peripheral circuit that is a feedback signal input terminal, PWM control capable of varying the IDRAIN peak value is implemented for the transition from a heavy load state to a light load state and intermittent oscillation control is implemented for the transition between a light load state to a loadless state, such that noise from the coil, transformer, and the like is suppressed and higher efficiency is realized.
摘要翻译：本发明涉及一种用于需要更高输出的开关电源，防止来自线圈，变压器等的噪声并实现高效率电源的半导体器件。通过将包括p型MOSFET，过电流检测电平调谐电路，过电流检测电路和间歇振荡控制电路的电流镜像电路连接到作为反馈信号输入端子的FB端子外围电路，能够变化的PWM控制实现了从重负载状态到轻负载状态的过渡的IDRAIN峰值，并且实现了轻负载状态到无负载状态之间的转换的间歇振荡控制，使得来自线圈，变压器等的噪声被抑制并且实现更高的效率。

92. 发明申请

US20040264221A1 Switching power supply 失效
标题翻译：开关电源
公开(公告)号：US20040264221A1
公开(公告)日：2004-12-30
申请号：US10754604
申请日：2004-01-12
申请人： Matsushita Elec. Ind. Co. Ltd.
发明人： Yoshihiro Mori
IPC分类号： H02J001/02
CPC分类号： H02M3/33523 , H02M1/32 , H02M2001/009
摘要： The present invention provides a switching power supply which has an overcurrent protection characteristic with a small number of components. The switching power supply includes a regulator from a drain and an auxiliary winding VCC, a drain current detection circuit for detecting a current applied to a switching element, an oscillation circuit for outputting a clock signal of a constant frequency, a feedback signal control circuit for detecting a control signal from the secondary side and controlling current applied to the switching element, a clamping circuit for controlling the maximum value of current applied to the switching element, and a clamp voltage variable circuit for changing a clamp voltage of the clamping circuit and an oscillation frequency of the oscillation circuit according to a voltage of VCC.
摘要翻译：本发明提供一种具有少数部件的过电流保护特性的开关电源。开关电源包括来自漏极和辅助绕组VCC的调节器，用于检测施加到开关元件的电流的漏极电流检测电路，用于输出恒定频率的时钟信号的振荡电路，反馈信号控制电路检测来自次级侧的控制信号并控制施加到开关元件的电流，用于控制施加到开关元件的电流的最大值的钳位电路和用于改变钳位电路的钳位电压的钳位电压可变电路和振荡电路的振荡频率根据VCC的电压。

93. 发明申请

US20040245567A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20040245567A1
公开(公告)日：2004-12-09
申请号：US10860112
申请日：2004-06-04
申请人： Matsushita Elec. Ind. Co. Ltd.
发明人： Toshiaki Kawasaki
IPC分类号： G11C011/34
CPC分类号： G11C16/0416 , G11C2216/10 , H01L27/115 , H01L27/11558 , Y10S257/909
摘要： In a memory cell, the substrate contact region of an NMOS transistor and the well contact region of a PMOS transistor are arranged perpendicularly to a floating gate. In a cell array, the memory cell and another memory cell arranged axisymmetrically with respect to the memory cell are alternately arranged in the column direction to constitute a sub array, and the sub arrays arranged in the column direction are arranged in parallel or axisymmetically in the row direction. With this arrangement, the substrate contact region, the well contact region, and the diffusion region of the PMOS transistor can be shared between the adjacent memory cells, thereby reducing the area of the cell array.
摘要翻译：在存储单元中，NMOS晶体管的衬底接触区域和PMOS晶体管的阱接触区域垂直于浮置栅极布置。在单元阵列中，存储单元和相对于存储单元轴对称布置的另一个存储单元在列方向上交替布置以构成子阵列，并且沿列方向排列的子阵列平行或轴对称地布置在行方向。利用这种布置，可以在相邻的存储单元之间共享衬底接触区域，阱接触区域和PMOS晶体管的扩散区域，从而减小单元阵列的面积。

94. 发明申请

US20040229389A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20040229389A1
公开(公告)日：2004-11-18
申请号：US10843364
申请日：2004-05-12
申请人： Matsushita Elec. Ind. Co. Ltd.
发明人： Masahiro Joei
IPC分类号： G01R031/26 , H01L021/4763 , H01L021/66
CPC分类号： H01L22/20 , H01L21/76802 , H01L21/76805 , H01L21/76814 , H01L21/76838 , H01L23/5226 , H01L2924/0002 , Y10S438/906 , H01L2924/00
摘要： A manufacturing method of a semiconductor device, including the steps of forming a metal wire on a circuit formed on a semiconductor substrate, forming an insulating film on the metal wire, forming a via hole in the insulating film so as to expose a surface of the metal wire by selectively etching the insulating film by a plasma dry etching method, measuring a first level difference between the surface of the metal wire and the surface of the insulating film by a non-contact measurement method, removing the metal oxide film on the surface of the metal film by cleaning the surface of the metal film, measuring a second level difference between the surface of the metal film and the surface of the insulating film by a non-contact measurement method, and determining an amount of oxidation of the metal wire from a difference between the first and the second level differences.
摘要翻译：一种半导体器件的制造方法，包括以下步骤：在形成在半导体衬底上的电路上形成金属线，在所述金属线上形成绝缘膜，在所述绝缘膜中形成通孔，以暴露所述绝缘膜的表面金属线通过等离子体干法蚀刻法选择性地蚀刻绝缘膜，通过非接触测量方法测量金属线表面与绝缘膜表面之间的第一级差，去除表面上的金属氧化物膜通过清洁金属膜的表面，通过非接触测量方法测量金属膜的表面和绝缘膜的表面之间的第二水平差，并且确定金属线的氧化量从第一和第二水平差异的差异。

95. 发明申请

US20040194814A1 Apparatus and process for stripping resist 审中-公开
标题翻译：剥离抗蚀剂的设备和工艺
公开(公告)号：US20040194814A1
公开(公告)日：2004-10-07
申请号：US10817813
申请日：2004-04-06
申请人： Matsushita Elec. Ind. Co., Ltd.
发明人： Norio Nishimura
IPC分类号： B08B003/02
CPC分类号： H01L21/67086 , C11D7/261 , C11D11/0047 , H01L21/31133 , H01L21/6708
摘要： A resist stripping apparatus is provided for cleaning a plurality of semiconductor substrates using a wafer cassette that can hold the plurality of semiconductor substrates. The apparatus includes a stripping bath capable of completely immersing the wafer cassette holding the semiconductor substrates, a unit for feeding a substitute liquid for replacing a resist stripping chemical therewith, a unit for discharging the substitute liquid, and at least one chemical high pressure spray nozzle for jetting the substitute liquid under high pressure to the semiconductor substrates.
摘要翻译：提供了一种抗蚀剂剥离装置，用于使用能够保持多个半导体衬底的晶片盒来清洁多个半导体衬底。该装置包括能够完全浸渍保持半导体基板的晶片盒的剥离浴，用于供给用于替换抗蚀剂剥离化学品的替代液的单元，用于排出替代液的单元，以及至少一个化学高压喷嘴用于将替代液体在高压下喷射到半导体衬底。

96. 发明申请

US20040059817A1 Identification code management system for home network 审中-公开
标题翻译：家庭网络识别码管理系统
公开(公告)号：US20040059817A1
公开(公告)日：2004-03-25
申请号：US10662452
申请日：2003-09-16
申请人： Matsushita Elec. Ind. Co., Ltd.
发明人： Reiko Ueno , Yasuyuki Shintani
IPC分类号： G06F015/173
CPC分类号： H04L29/12254 , H04L12/2803 , H04L12/2807 , H04L12/2834 , H04L29/1232 , H04L61/2038 , H04L61/2092 , H04L2012/2841 , H04L2012/2843 , H04L2012/2849 , H04L2012/285
摘要： A unique identification code (ID) is given to each appliance in each sub-network of a home network (HBS). An appliance out of use is deleted. The system can be automatically updated. One router is used as a parent router and only the router is made to manage the identification codes. The IDs include the IDs of the sub-networks and the IDs of the appliances in the sub-networks. Information about the year when an ID is given is given to the ID. After a certain period of time, the presence of each ID is checked. Each appliance has information about the grade of the system, and the information is utilized for updating the appliance having a router function when an appliance is newly installed.
摘要翻译：在家庭网络（HBS）的每个子网络中的每个设备给出唯一的识别码（ID）。不再使用的设备被删除。系统可以自动更新。一个路由器用作父路由器，只有路由器才能管理识别码。 ID包括子网的ID和子网中的设备的ID。给予ID的年份的信息。在一段时间后，检查每个ID的存在。每个设备具有关于系统等级的信息，并且当新安装设备时，该信息用于更新具有路由器功能的设备。

97. 发明申请

US20040051621A1 Coil component and method of producing the same 有权
标题翻译：线圈部件及其制造方法
公开(公告)号：US20040051621A1
公开(公告)日：2004-03-18
申请号：US10657105
申请日：2003-09-09
申请人： Matsushita Elec. Ind. Co. Ltd.
发明人： Toshiyuki Nakata , Tsunetsugu Imanishi , Hidetoshi Hiwatashi , Hiroyuki Hamamoto
IPC分类号： H01F027/28
CPC分类号： H01F27/2847 , H01F27/027 , H01F27/2804 , Y10T29/4902 , Y10T29/49069 , Y10T29/49073
摘要： The present invention provides a coil component includes: a coil section having a through hole and composed of a plurality of ring sections formed of a metallic flat plate disposed in a plane, connected to each other at ring connecting sections, having slits formed by cutting part of the ring sections, and bent at the ring connecting sections and placed one on top of another, terminals connected to the coil section, and a package member covering the coil section and projecting the terminals therefrom. With this structure, the coil component operates in a high-frequency region, ensuring an inductance and infinitesimal direct-current resistance while being adaptable to a large current, and can be miniaturized.
摘要翻译：本发明提供一种线圈部件，其特征在于，具有：具有贯通孔的线圈部，该多个环形部由金属平板构成，该金属平板形成在平面上，环形连接部彼此连接，的环形部分弯曲并且在环形连接部分处弯曲并且放置在另一个的顶部上，连接到线圈部分的端子以及覆盖线圈部分并且从其突出的端子的封装构件。利用这种结构，线圈组件在高频区域中工作，确保电感和无限小的直流电阻同时适应大电流，并且可以小型化。

98. 发明申请

US20030183339A1 Film substrate treatment apparatus, film substrate treatment method, and film substrate transport method 失效
公开(公告)号：US20030183339A1
公开(公告)日：2003-10-02
申请号：US10403081
申请日：2003-04-01
申请人： MATSUSHITA ELEC IND CO LTD
发明人： Tatsuo Sasaoka , Naoki Suzuki , Takahiro Yonezawa , Satoshi Horie
IPC分类号： C23F001/00
CPC分类号： H01L21/6838 , H01L21/6831 , H05K3/3489 , H05K3/381 , Y10S414/135 , Y10S414/139
摘要： To provide a film substrate treatment apparatus that appropriately mounts film substrates on an electrostatic adsorption stage. In the film substrate treatment apparatus, adsorption pads are disposed on the first adsorption units that mount film substrates on an electrostatic stage, and a pressing member that presses the edge portion areas of the film substrates against the stage is provided. The film substrates can thereby be reliably attached to the stage, and the film substrates can be appropriately treated in a decompressed atmosphere.

99. 发明申请

US20030174462A1 Solid electrolytic capacitor and method for manufacturing the same 失效
标题翻译：固体电解电容器及其制造方法
公开(公告)号：US20030174462A1
公开(公告)日：2003-09-18
申请号：US10390016
申请日：2003-03-18
申请人： MATSUSHITA ELEC. IND. CO. LTD.
发明人： Tomohide Wada , Katsuyuki Nakamura
IPC分类号： H01G004/228 , H01G009/04
CPC分类号： H01G9/012 , Y10T29/417
摘要： In a fixing portion against which an end surface of a capacitor element abuts is provided on a portion of a cathode lead frame covered with a casing resin, the distance through which external oxygen moves to reach the capacitor element is increased by the distance of the fixing portion, whereby probability of oxidation is remarkably reduced, thus oxidation hardly occurs in the capacitor element. Further, since the capacitor element can be reliably positioned by bringing its end into abutment against the fixing portion, assembly accuracy is largely improved and the capacitor can be made compact with ease.
摘要翻译：在电容器元件的端面抵接的固定部设置在被外壳树脂覆盖的阴极引线框架的一部分上，外部氧气移动到达电容器元件的距离增加了固定距离从而氧化的可能性显着降低，因此在电容器元件中几乎不发生氧化。此外，由于通过使其端部抵靠固定部分可以可靠地定位电容器元件，因此大大提高了组装精度，并且可以容易地使电容器紧凑。

100. 发明申请

US20030162373A1 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film 失效
公开(公告)号：US20030162373A1
公开(公告)日：2003-08-28
申请号：US10379539
申请日：2003-03-06
申请人： Matsushita Elec. Ind. Co. Ltd.
发明人： Masashi Goto , Mikihiko Nishitani , Masaharu Terauchi
IPC分类号： H01L021/20 , H01L021/00
CPC分类号： H01L29/66765 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L29/78678 , Y02E10/545 , Y02E10/546
摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

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