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91. 发明授权

US06701035B2 Electric-field actuated chromogenic materials based on molecules with a rotating middle segment for applications in photonic switching 失效
公开(公告)号：US06701035B2
公开(公告)日：2004-03-02
申请号：US10187720
申请日：2002-07-01
申请人： Xiao-An Zhang , R. Stanley Williams , Kent D. Vincent
发明人： Xiao-An Zhang , R. Stanley Williams , Kent D. Vincent
IPC分类号： G02B626
CPC分类号： G11C13/0014 , B82Y10/00 , G02F1/15 , G02F1/17 , G02F1/174 , G11C13/02 , G11C13/04 , G11C23/00 , G11C2213/14 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H01L51/0051 , H01L51/0058 , H01L51/0595
摘要： A molecular system is provided for electric field activated switches, such as optical switches. The molecular system has an electric field induced band gap change that occurs via a molecular conformation change, based on a rotor/stator construction of the molecular system, involving a rotating portion (rotor) connected between two stationary portions (stators). Nanometer-scale reversible optical switches are thus provided that can be assembled easily to make a variety of optical devices, including optical displays.

92. 发明授权

US06559468B1 Molecular wire transistor (MWT) 失效
标题翻译：分子线晶体管（MWT）
公开(公告)号：US06559468B1
公开(公告)日：2003-05-06
申请号：US09699269
申请日：2000-10-26
申请人： Philip J. Kuekes , R. Stanley Williams
发明人： Philip J. Kuekes , R. Stanley Williams
IPC分类号： H01L2906
CPC分类号： H01L27/285 , B82Y10/00 , B82Y15/00 , G11C11/34 , G11C13/0014 , G11C13/02 , G11C2213/17 , G11C2213/77 , G11C2213/81 , H01L29/167 , H01L29/73 , H01L51/0595 , Y10S977/762 , Y10S977/936
摘要： Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed. Analogously, one wire may comprise doped semiconductor, such as silicon, and the other wire a metal, the doped silicon wire forming the source and drain and the metal wire forming the gate by modulation doping on the doped silicon wire where the wires cross, between the source and drain, to form a field effect transistor. Both P-channel and N-channel FETs may be formed. The construction of both bipolar transistors and FETs on a nanometer scale, which are self-aligned and modulation-doped, is thereby enabled.
摘要翻译：提供双极和场效应分子线晶体管。分子线晶体管包括一对交叉导线，其中至少一根导线包括掺杂的半导体材料。一对交叉线形成一条线交叉另一条线的连接处，一条线路上设有路易斯酸官能团，另一条线路上设有路易斯碱官能团。如果两根导线都是诸如硅的掺杂半导体，则一个是P掺杂的，另一个是N掺杂的。给定掺杂的一条导线包括发射极和集电极部分，另一条导线包括基部，该基部通过在包含发射极和集电极的导线上的调制掺杂形成，其中导线交叉并且在发射极和集电极部分之间，从而形成双极晶体管。可以形成NPN和PNP双极晶体管。类似地，一条导线可以包括诸如硅的掺杂半导体，而另一条导线是金属，形成源极和漏极的掺杂硅线和金属线通过在掺杂的硅线上的调制掺杂形成栅极，其中电线交叉，源极和漏极，形成场效应晶体管。可以形成P沟道和N沟道FET。因此能够实现自对准和调制掺杂的纳米尺度的双极晶体管和FET的构造。

93. 发明授权

US06459095B1 Chemically synthesized and assembled electronics devices 失效
标题翻译：化学合成和组装的电子器件
公开(公告)号：US06459095B1
公开(公告)日：2002-10-01
申请号：US09282048
申请日：1999-03-29
申请人： James R. Heath , R. Stanley Williams , Philip J. Kuekes
发明人： James R. Heath , R. Stanley Williams , Philip J. Kuekes
IPC分类号： H01L2906
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要翻译：提供了制造电子器件的途径，其中器件由夹着电可寻址分子种类的两条交叉导线组成。该方法实现起来非常简单和便宜，并且从几微米的线尺寸缩小到纳米级尺寸。本发明的装置可用于产生交叉开关阵列，逻辑器件，存储器件以及通信和信号路由器件。本发明能够通过直接且廉价的化学组装程序在比例范围从微米到纳米的范围内构建分子电子器件。该装置部分或完全化学地组装，并且缩放的关键在于，一旦装置组装而不是装配之前，基板上的装置的位置被定义。

94. 发明授权

US06314019B1 Molecular-wire crossbar interconnect (MWCI) for signal routing and communications 失效
标题翻译：用于信号路由和通信的分子线交叉互连（MWCI）
公开(公告)号：US06314019B1
公开(公告)日：2001-11-06
申请号：US09280225
申请日：1999-03-29
申请人： Philip J. Kuekes , R. Stanley Williams , James R. Heath
发明人： Philip J. Kuekes , R. Stanley Williams , James R. Heath
IPC分类号： G11C1100
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0009 , G11C2213/34 , G11C2213/77 , G11C2213/81 , Y10S977/708 , Y10S977/762 , Y10S977/765 , Y10S977/936
摘要： A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises a two-dimensional array of a plurality of nanometer-scale switches. Each switch is reconfigurable and self-assembling and comprises a pair of crossed wires which form a junction where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecule. Each level comprises at least one group of switches and each group of switches comprises at least one switch, with each group in the first level connected to all other groups in the second level in an all-to-all configuration to provide a scalable, defect-tolerant, fat-tree networking scheme. The primary advantage is ease of fabrication, because an active switch is formed any time two wires cross. This saves tremendously on circuit area (a factor of a few times ten), since no other wires or ancillary devices are needed to operate the switch or store the required configuration. This reduction of the area of a configuration bit and its switch to just the area of two crossing wires is a major advantage in constructing a defect-tolerant interconnect network.
摘要翻译：提供了用于分子线交叉开关中的信号路由和第一级和第二级之间的通信的分子线交叉开关互连。分子线交叉杆包括多个纳米级开关的二维阵列。每个开关是可重构和自组装的，并且包括一对交叉线，其形成一条线与另一条线交叉的连接处，以及至少一个在连接处连接一对交叉线的连接器种类。连接器种类包括双稳态分子。每个级别包括至少一组交换机，并且每组交换机包括至少一个交换机，其中第一级别中的每个组以全对齐配置连接到第二级别中的所有其他组，以提供可扩展的缺陷不容忍，胖树联网方案。主要优点是易于制造，因为在任何时候两根线交叉时形成有源开关。由于不需要其他电线或辅助设备来操作交换机或存储所需的配置，因此可大大节省电路面积（十倍）。配置位区域的这种减少及其切换到两条交叉电线的区域是构建容错互连网络的主要优点。

95. 发明授权

US6060724A Quantum wire logic gate 有权
标题翻译：量子线逻辑门
公开(公告)号：US6060724A
公开(公告)日：2000-05-09
申请号：US228214
申请日：1999-01-11
申请人： Curt A. Flory , R. Stanley Williams
发明人： Curt A. Flory , R. Stanley Williams
IPC分类号： H01L29/12 , H01L29/66 , H01L45/00 , H01L29/08
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/66977 , Y10S977/936 , Y10S977/94
摘要： A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output, a second quantum wire extending from the input to a second output, and a third quantum wire extending between the first and second outputs, the three quantum wires together defining a ring. A controllable-length quantum wire electron stub tuner is connected to the ring. As charge carriers propagate from the input around the ring the stub tuner is used to control the quantum interference of the charge carriers resulting in local maxima and minima at various points around the ring. Setting the stub to a first length results in a local maximum at the first output and a local minimum at the second output, and the charge carriers can propagate to the first output and not the second output. Setting the stub to a second length reverses the locations of the local maxima and minima, and the charge carriers propagate to the second output but not the first output. The invention can also include a second controllable-length stub attached to the ring to increase switching efficiency. A quantum switch according to the invention can also act as a simple binary NOT logic gate or a simple binary AND logic gate.
摘要翻译：一种量子线开关和用于利用电荷载流子的量子干涉在第一输出和第二输出之间切换电荷载流子的切换方法。量子开关包括从输入延伸到第一输出的量子线，从输入延伸到第二输出的第二量子线，以及在第一和第二输出之间延伸的第三量子线，三个量子线一起限定环。可控长度的量子线电子短截线调谐器连接到环上。随着电荷载体从环绕输入端传播，使用短截线调谐器来控制电荷载流子的量子干涉，导致环周围各个点处的局部最大值和最小值。将短截线设置为第一长度导致第一输出处的局部最大值和第二输出端的局部最小值，并且电荷载流子可以传播到第一输出而不是第二输出。将短截线设置为第二长度可以反转局部最大值和最小值的位置，并且电荷载流子传播到第二个输出而不是第一个输出。本发明还可以包括附接到环的第二可控长度短截线以提高开关效率。根据本发明的量子开关也可以用作简单的二进制非逻辑门或简单的二进制AND逻辑门。

96. 发明授权

US09846565B2 Shiftable memory employing ring registers 有权
公开(公告)号：US09846565B2
公开(公告)日：2017-12-19
申请号：US14349352
申请日：2011-10-27
申请人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
发明人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
IPC分类号： G06F5/08 , G11C19/00 , G11C19/28 , G11C21/00 , G11C7/10
CPC分类号： G06F5/08 , G11C7/1012 , G11C7/1036 , G11C19/00 , G11C19/28 , G11C21/00
摘要： Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.

97. 发明授权

US09323217B2 Metamaterial and dynamically reconfigurable hologram employing same 有权
标题翻译：超材料和使用相同的动态可重构全息图
公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
IPC分类号： G03H1/08 , G03H1/02 , G03H1/22 , G02B1/00
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译：负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。第一层中的纳米线在第二层中与纳米线的取向近似垂直。第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。横杆还包括在各层之间的纳米线交叉处的共振元件。每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。

98. 发明授权

US09224821B2 Customizable nonlinear electrical devices 有权
标题翻译：可定制的非线性电气设备
公开(公告)号：US09224821B2
公开(公告)日：2015-12-29
申请号：US14385544
申请日：2012-04-26
申请人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L29/24 , H01L29/47 , H01L29/861 , H01L29/872 , B82Y10/00 , H01L27/102 , G11C13/00 , H01L27/24 , H01L21/02 , H01L29/8605 , H01L29/92 , H01L29/06
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译：在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。金属氧化物层包括共存的金属和金属氧化物的导电混合物。还提供了形成非线性电气装置的方法。

99. 发明授权

US09178153B2 Memristor structure with a dopant source 有权
标题翻译：具有掺杂剂源的忆阻器结构
公开(公告)号：US09178153B2
公开(公告)日：2015-11-03
申请号：US14233075
申请日：2011-07-20
申请人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： H01L45/1658 , G11C13/0007 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
摘要翻译：公开了一种包括掺杂剂源的忆阻器。该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子开关材料。还公开了一种用于制造包括掺杂剂源的忆阻器的方法。

100. 发明申请

US20140346426A1 Memristor with Channel Region in Thermal Equilibrium with Containing Region 有权
标题翻译：带通道区的忆阻器与包含区域的热平衡
公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译：具有与含有区域的热平衡的通道区域的忆阻器。通道区域具有可变浓度的移动离子。由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。

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